AP0503GMT-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement D BVDSS 30V
▼ SO-8 Compatible with Heatsink RDS(ON) 5.5mΩ
▼ Low On-resistance ID 70A
G
▼ RoHS Compliant
S
D
Description D
D
Advanced Power MOSFETs from APEC provide the D
designer with the best combination of fast switching, □
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application S
and the foot print is compatible with SO-8 with backside heat sink and S
S
lower profile. G PMPAK 5x6
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current (Chip) 70 A
3
ID@TA=25℃ Continuous Drain Current 24 A
3
ID@TA=70℃ Continuous Drain Current 19 A
1
IDM Pulsed Drain Current 250 A
PD@TC=25℃ Total Power Dissipation 44.6 W
PD@TA=25℃ Total Power Dissipation 5 W
4
EAS Single Pulse Avalanche Energy 28.8 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2.8 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W
Data & specifications subject to change without notice 1
200903043
AP0503GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 5.5 mΩ
VGS=4.5V, ID=20A - - 10.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 50 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=30A - 9.2 15 nC
Qgs Gate-Source Charge VDS=24V - 2.5 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.7 nC
2
td(on) Turn-on Delay Time VDS=15V - 7.5 - ns
tr Rise Time ID=30A - 80 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tf Fall Time RD=0.5Ω - 5 - ns
Ciss Input Capacitance VGS=0V - 930 1500 pF
Coss Output Capacitance VDS=25V - 280 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF
Rg Gate Resistance f=1.0MHz - 1.5 2.3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=20A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0503GMT-HF
160 100
T C =25 C
o 10V o
T C =150 C 10V
7.0V 7.0V
6.0V 80
6.0V
5.0V 5.0V
ID , Drain Current (A)
ID , Drain Current (A)
120
V G =4.0V
60
80
V G = 4.0 V
40
40
20
0 0
0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
10 2.0
I D =20A I D =30A
T C =25 o C V G =10V
9
1.6
RDS(ON) (mΩ)
Normalized RDS(ON)
7 1.2
0.8
4 0.4
2 4 6 8 10 -50 0 50 100 150
o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30 1.6
Normalized VGS(th) (V)
1.2
T j =150 o C o
T j =25 C
20
IS(A)
0.8
10
0.4
0 0.0
0 0.4 0.8 1.2 1.6 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP0503GMT-HF
16
f=1.0MHz
1200
I D =30A
1000
VGS , Gate to Source Voltage (V)
12
C iss
V DS =15V
800
V DS =18V
C (pF)
V DS =24V
8 600
400
4 C oss
200
C rss
0 0
0 4 8 12 16 20 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
1000 1
Duty factor = 0.5
Normalized Thermal Response (Rthjc)
100 0.2
100us
ID (A)
0.1
0.1
0.05
PDM
10
t
1ms
T
0.02
10ms Duty factor = t/T
T C =25 o C Peak Tj = PDM x R thjc + T c
100ms 0.01
Single Pulse
DC Single Pulse
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
