EE 152 QUESTIONS

1. A semiconductor is formed by ____ bonds.

(a) covalent
(b) electrovalent
(c) co-ordinate
(d) none of the above

2. At room temperature, an intrinsic silicon crystal acts approximately as ______.

(a) a battery
(b) a conductor
(c) an insulator
(d) a piece of copper wire

3. At absolute temperature, an intrinsic semiconductor has _____.

(a) a few free electrons
(b) many holes
(c) many free electrons
(d) no holes or free electrons

4. The energy gap between valence and conduction bands in insulators is about _______.
(a) 15 eV
(b) 1.5 eV
(c) 0 eV
(d) 0.5 eV

5. Calculate the electron density in a piece of p-type silicon that has been doped with 3.6 ×
1016 acceptor atoms per cm3. Take ni = 2.0 × 1010 cm3 and the temperature, T = 25 oC
(a) 3.6 × 1016 electrons per cm3
(b) 11.11 × 1019 electrons per cm3
(c) 11. 11 × 103 electrons per cm3
(d) 6.48 × 1022 electrons per cm3

6. The resistivity of silicon is found to be 2192.98 Ωm. Find the electron mobility if the
electron mobility is 2.5 times the hole mobility and the carrier intrinsic concentration is ni =
1.45 × 1016 per m3
(a) 0.140 m2V-1s-1
(b) 0.056 m2V-1s-1
(c) 0.10 m2V-1s-1
(d) 0.075 m2V-1s-1

7. With forward bias to a pn junction, the width of depletion layer _____.

(a) decreases
(b) increases
(c) remains the same
(d) none of the above

8. In the depletion region of a pn junction, there is a shortage of _____

(a) Acceptor ions
(b) Holes and electrons
(c) Donor ions
(d) None of the above

Use the information below to answer questions 9 and 10

An A.C voltage of peak value 25V is connected in series with a silicon diode and a load
resistance of 500 Ω. Assume the diode to be real.
9. Find the peak current through the diode
(a) 47.8 mA
(b) 48.6 mA
(c) 50.0 mA
(d) 51.4 mA
10. Find the peak output voltage
(a) 23.9 V
(b) 24.3 V
(c) 25.0 V
(d) 25.7 V

11. When a crystal diode is used as a rectifier, the most important consideration is ________.
(a) forward characteristic
(b) doping level
(c) reverse characteristic
(d) PIV rating

12. A reverse biased pn junction has resistance of the order of _____.

(a) Ω
(b) kΩ
(c) MΩ
(d) None of the above

13. The leakage current in a pn junction is of the order of ______.

(a) A
(b) mA
(c) kA
(d) µA

Use the information below to answer questions 14 and 16

A 230V, 50Hz AC voltage is fed as an input to a centre tapped bridge rectifier through a 5:1
step-down transformer and finally to a 100 Ω load.
14. Find the DC output voltage
(a) 20.71 V
(b) 65.05 V
(c) 122.5 V
(d) 130.11 V

15. Find the peak inverse voltage

(a) 20.71 V
(b) 65.05 V
(c) 122.5 V
(d) 130.11 V

16. Find the rectification efficiency assuming the forward resistance of the diode is 20Ω.
(a) 67.67%
(b) 73.82%
(c) 81.20%
(d) 58.00%

17. The maximum efficiency of a half-wave rectifier is ________.

(a) 40.6%
(b) 81.2%
(c) 50%
(d) 25%

18. The ripple factor is a full-wave rectifier is _____.

(a) 2
(b) 1.21
(c) 2.5
(d) 0.48

19. The electrons in the conduction band are known as _____.

(a) bound electrons
(b) valence electrons
(c) free electrons
(d) none of the above

20. A power supply A delivers 200 V dc with a ripple of 1.5 V RMS. What is the ripple factor
of the power supply?
(a) 0.75%
(b) 0.85%
(c) 1.50%
(d) 1.55%

Use the information below to answer questions 21 to 24

In a bridge rectifier circuit, real diodes having forward resistances of 1 Ω and infinite reverse
resistances are used. The alternating supply voltage is 240 Vrms, 50Hz and the load resistance
is 480 Ω. Assume the forward voltage across these diode is negligible.
21. Calculate the mean load current
(a) 448 mA
(b) 450 mA
(c) 500 mA
(d) 704 mA

22. Calculate the mean load voltage

(a) 215 V
(b) 216 V
(c) 240V
(d) 338 V

23. Find the peak inverse voltage

(a) 215 V
(b) 216 V
(c) 240 V
(d) 339 V
24. Find the output ripple frequency
(a) 25 Hz
(b) 50 Hz
(c) 75 Hz
(d) 100 Hz

25. Which of the following ways can be used to modulate the concentration of conduction
electrons & holes in a semiconductor?
I. Adding impurities
II. Applying an electric field
III. Irradiation
(a) I only
(b) II only
(c) II and III only
(d) I, II and III only

26. The acoustic waves which are transmitted when the atoms in the crystal lattice structure
vibrate are called _____.
(a) photons
(b) phonons
(c) vibrants
(d) phonics

27. Which of the following are factors which affect the amount of ripple left in a filter?
I. The capacity of the filter capacitor
II. The supply frequency
II. The RMS current
(a) I only
(b) I and II only
(c) II and III only
(d) III only
Use the information below to answer questions 28 to 30
It is desired to design a filter for a half wave rectifier. The required percentage ripple given is
0.1%. The input supply voltage is 230 VRMS and the load is 100 Ω at a frequency of 50Hz.
28. What should be the optimum peak to peak ripple voltage to meet the 0.1% percentage
ripple?
(a) 0.325 V
(b) 0.65 V
(c) 32.53V
(d) 33.33 V

29. What should be the total charge supplied by the capacitor?

(a) 0.046 C
(b) 0.065 C
(c) 0.130 C
(d) 0.260 C

30. Assuming the required capacitor cannot be purchased on the market, which of the
following capacitors can meet the 0.1% percentage ripple?
I. 197500 µF
II. 400,000 µF
III. 150,000 µF
(a) I and II only
(b) II only
(c) III only
(d) I and III only