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PDFelement
PARUL UNIVERSITY
FACULTY OF ENGINEERING & TECHNOLOGY
B.Tech. Summer 2018 - 19Examination
Semester: 1/2 Date: 16/05/2019
Subject Code: 203192102 Time: 02:00pm to 04:30pm
Subject Name: Engineering Physics Total Marks: 60
Instructions:
1. All questions are compulsory.
2. Figures to the right indicate full marks.
3. Make suitable assumptions wherever necessary.
4. Start new question on new page.
Q.1 Objective Type Questions - (All are compulsory) (Each of one mark) (15)
1. The density of states increases _________ as energy increases. (parabolically/ linearly).
2. In Si at 0 K, valence band is completely _______ (filled/ empty) and conduction band is
completely ________. (filled/ empty)
3. Define energy gap.
4. The current generated due to net movement of charges due to applied electric field is defined as
________.
5. ____________ is a process in which particles move from a region of higher concentration to a
region of lower concentration.
6. Define Schottky barrier.
7. The transition of electron from one energy level to another energy level which produces energy
in the form of light is termed as __________ transition. (radiative/ non radiative).
8. Define intra band transition.
9. Define optical phonons.
10. The quantum of lattice vibrations is known as ______________. (photons/ phonons)
11. _____________ is the resistance offered by the diode to the dc current.
12. For the ideal diode, material constant is equal to _________.
13. When the size drops below 100nm, new structure of the material is formed called _________.
14. Give two examples of one dimensional materials.
15. As the dimensions are reduced to nano meter range, the density of states become ____________.
(continuous/ discontinuous).
Q.2 Answer the following questions. (Attempt any three) (15)
A) Write the applications of low dimensional materials in optoelectronic devices.
B) Derive the expression of Jdrf = (nµn + pµp)eE which is a drift current density equation in a
semiconductor.
B) Explain Photovoltaic effect in detail along with necessary labelled diagram.
C) Explain in detail Interband and intrabend transition along with suitable necessary diagrams.
Q.3 A) Explain hot point probe method for the determination of type of semiconductor. (07)
B) Explain different types of low dimensional semiconductor structures. (08)
OR
B) Obtain an expression for optical joint density of states. (08)
Q.4 A) Derive the expressions for equilibrium concentration of electrons in conduction band and (07)
concentration of holes in valence band using the following equations
𝑁(𝐸)
(i) fF (E) =
𝑔(𝐸)
1 2𝑚
(ii) Density of states in conduction band: gc (E) = 2𝜋2 ( ℏ2 )3/2 (E - Ec)1/2.
1 2𝑚 3/2
(iii) Density of states in valence band: gv(E) = ( ) (Ev - E)1/2.
2𝜋2 ℏ2
OR
ℏ2 (07)
A) Obtain the expression for fermi energy as EF = 2𝑚 (3π2 n)2/3.
B) Explain UV – VIS method for the measurement of bandgap of semiconductor. (08)
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