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HiPerFETTM V DSS ID25 RDS(on)

Power MOSFETs IXFK 73 N 30 300 V 73 A Ω
45 mΩ
IXFN 73 N 30 300 V 73 A Ω
45 mΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr

TO-264 AA (IXFK)
Symbol Test Conditions Maximum Ratings
IXFK IXFN

VDSS TJ = 25°C to 150°C 300 300 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V G (TAB)
D
VGS Continuous ±20 ±20 V S

VGSM Transient ±30 ±30 V

miniBLOC, SOT-227 B (IXFN)
ID25 TC = 25°C 73 73 A E153432
S
IDM TC = 25°C, pulse width limited by TJM 292 292 A
G
IAR TC = 25°C 40 40 A
EAR TC = 25°C 30 30 mJ
S
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 5 V/ns
TJ ≤ 150°C, RG = 2 W D

PD TC = 25°C 500 520 W G = Gate D = Drain

TJ -55 ... +150 °C S = Source TAB = Drain
TJM 150 °C Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Tstg -55 ... +150 °C
Features
l
TL 1.6 mm (0.063 in) from case for 10 s 300 - °C International standard packages
l
JEDEC TO-264 AA, epoxy meet
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~ UL 94 V-0, flammability classification
IISOL ≤ 1 mA t=1s - 3000 V~ l
miniBLOC with Aluminium nitride
Md Mounting torque 0.9/6 1.5/13 Nm/lb.in. isolation
l
Terminal connection torque - 1.5/13 Nm/lb.in. Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
Weight 10 30 g l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
l
Fast intrinsic Rectifier

Applications
Symbol Test Conditions Characteristic Values l
DC-DC converters
(TJ = 25°C, unless otherwise specified) l
Synchronous rectification
min. typ. max. l
Battery chargers
l
VDSS V GS = 0 V, ID = 1 mA 300 V Switched-mode and resonant-mode
power supplies
VGS(th) V DS = VGS, ID = 8 mA 2 4 V l
DC choppers
l
IGSS V GS = ±20 VDC, VDS = 0 ±200 nA Temperature and lighting controls
l
Low voltage relays
IDSS V DS = 0.8 VDSS TJ = 25°C 400 uA
V GS = 0 V TJ = 125°C 2 mA Advantages
l
RDS(on) V GS = 10 V, ID = 0.5 ID25 45 mΩ Easy to mount
l
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Space savings
l
High power density

© 2001 IXYS All rights reserved 92805J (11/01)

 IXFK www.DataSheet4U.com
73N30
IXFN 73N30
TO-264 AA Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.

gfs V DS = 10 V; ID = 0.5 ID25, pulse test 50 S

Ciss 9000 pF
Coss V GS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
Crss 580 pF

td(on) 30 ns
tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 80 ns Dim. Millimeter Inches
td(off) RG = 1 Ω (External), 100 ns Min. Max. Min. Max.
A 4.82 5.13 .190 .202
tf 50 ns A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
Qg(on) 360 nC b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 nC c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
Qgd 180 nC E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
RthJC TO-264 AA 0.25 K/W J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
RthCK TO-264 AA 0.15 K/W L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
RthJC miniBLOC, SOT-227 B 0.24 K/W Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
RthCK miniBLOC, SOT-227 B 0.05 K/W R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified) miniBLOC, SOT-227 B
Symbol Test Conditions min. typ. max.

IS V GS = 0 V 73 A

ISM Repetitive; pulse width limited by TJM 292 A

VSD IF = 100 A, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t rr 200 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 µC
IRM 40 A M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IXFK 73N30
www.DataSheet4U.com
IXFN 73N30

Fig. 1 Output Characteristics Fig. 2 Input Admittance

160 160
VGS = 10V 8V
140 7V 140
TJ = 25°C
120 120
TJ = 25°C
ID - Amperes

ID - Amperes
100 100
6V
80 80
60 60
40 40
5V
20 20
0 0
0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10

VDS - Volts VGS - Volts

Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance
2.0 2.50
TJ = 25°C
2.25
1.8
RDS(on) - Normalized

RDS(on) - Normalized

2.00
1.6
VGS = 10V 1.75
ID = 40A
1.4 1.50
VGS = 15V
1.25
1.2
1.00
1.0
0.75
0.8 0.50
0 40 80 120 160 200 240 -50 -25 0 25 50 75 100 125 150

ID - Amperes TJ - Degrees C

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage
80 1.2
VGS(th) BVDSS
70 1.1
BV/VG(th) - Normalized

60
1.0
ID - Amperes

50
0.9
40
0.8
30
0.7
20

10 0.6

0 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC - Degrees C TJ - Degrees C

© 2001 IXYS All rights reserved

 IXFK www.DataSheet4U.com
73N30
IXFN 73N30

Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves

10 10000
Ciss
VDS = 150V 9000
ID = 42A
8 8000
IG = 10mA

Capacitance - pF
7000
VGE - Volts

6 6000
f = 1MHz
5000
VDS = 25V
4 4000
Coss
3000
2 2000
Crss
1000
0 0
0 50 100 150 200 250 300 350 400 0 5 10 15 20 25
Gate Charge - nCoulombs VDS - Volts

Fig.9 Source Current vs. Source

to Drain Voltage
160

140

120
ID - Amperes

100

80
TJ = 125°C
60

40
TJ = 25°C
20

0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD - Volts

Fig.10 Transient Thermal Impedance

Thermal Response - K/W

0.1

0.01
0.001 0.01 0.1 1

Time - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025