2021 - Naturepho - YH Kim
2021 - Naturepho - YH Kim
https://doi.org/10.1038/s41566-020-00732-4
Electroluminescence efficiencies of metal halide perovskite nanocrystals (PNCs) are limited by a lack of material strategies that
can both suppress the formation of defects and enhance the charge carrier confinement. Here we report a one-dopant alloying
strategy that generates smaller, monodisperse colloidal particles (confining electrons and holes, and boosting radiative recom-
bination) with fewer surface defects (reducing non-radiative recombination). Doping of guanidinium into formamidinium lead
bromide PNCs yields limited bulk solubility while creating an entropy-stabilized phase in the PNCs and leading to smaller PNCs
with more carrier confinement. The extra guanidinium segregates to the surface and stabilizes the undercoordinated sites.
Furthermore, a surface-stabilizing 1,3,5-tris(bromomethyl)-2,4,6-triethylbenzene was applied as a bromide vacancy healing
agent. The result is highly efficient PNC-based light-emitting diodes that have current efficiency of 108 cd A−1 (external quan-
tum efficiency of 23.4%), which rises to 205 cd A−1 (external quantum efficiency of 45.5%) with a hemispherical lens.
M
etal halide perovskites (MHPs) with the general ABX3 recombination and defects are reduced by surface-binding ligands;
formula (where A is an organic or inorganic cation, B is however, this strategy has limitations: (1) the dynamic nature
a metal cation and X is a halide anion) have narrow emis- of ligand–surface bonds and (2) steric hindrance effects that can
sion spectra (full-width at half-maximum ≈ 20 nm), allowing them leave undercoordinated sites unpassivated and prone to defect for-
to achieve high colour purity, a tunable emission wavelength range mation8,9. B-site cation engineering10, X-site anion exchange11 and
(400 nm ≤ λ ≤ 780 nm) and low-cost solution processability1–6. As surface-binding ligand engineering12 have also been used, leading to
a result, MHPs have been regarded as promising light emitters5–12. a maximum current efficiency of 76.8 cd A−1 (with an EQE of 17.1%
Such properties have also led to perovskite light-emitting diodes ph/el) in green emission24 and current efficiency of 10.6 cd A−1 (EQE
(PeLEDs), which have exhibited a tremendous increase in electrolu- of 21.3% ph/el considering angular electroluminescence distribu-
minescence efficiency13–15. These improvements have been obtained tion) in red emission11 in PeLEDs based on CsPbX3.
by (1) increasing the radiative recombination rate16 and (2) lower- The majority of research into PeLEDs is based on all-inorganic
ing the non-radiative recombination rate17. The radiative recom- PNCs. It has been shown that the orientational freedom of the
bination rate of the charge carriers has been increased by spatially liquid-like dipoles associated with the organic cations can reduce the
confining the electrons and holes in small perovskite polycrystalline charge recombination rates25–28. Although beneficial for photovoltaic
nanograins3, low-dimensional crystals18–20 or colloidal perovskite applications, this is undesirable for LEDs29. The all-inorganic MHPs
nanocrystals (PNCs)4,5. More effective strategies for suppression of contain spherical atomic A-site cations with zero dipole moment,
defects and associated non-radiative recombination are required to leading to enhancement of charge recombination. Nevertheless,
surpass the state of the art and further increase the electrolumines- there are shortcomings associated with the atomic A-site cations:
cence efficiency. a small phase space for tunability and a lack of lattice-stabilizing
In perovskite polycrystalline bulk films, stoichiometric control of directional hydrogen bonds. At the same time, there has been a lack
precursors3, use of passivation agents18–21 and post-treatments14,22,23 of comprehensive material design strategies to passivate the surface
were shown to lead to a maximum current efficiency of 78 cd A−1 defects and confine charge carriers inside of the nanocrystals.
(with an external quantum efficiency (EQE) of 20.3% ph/el based Here we propose a simple and rational PNC design to simul-
on Lambertian assumption)18. In colloidal PNCs, non-radiative taneously stabilize the undercoordinated sites at the surface while
1
Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea. 2School of Chemical and Biological Engineering,
Institute of Engineering Research, Research Institute of Advanced Materials, Nano Systems Institute, Seoul National University, Seoul, Republic of
Korea. 3Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA. 4School of Electrical Engineering, Korea Advanced Institute of
Science and Technology, Daejeon, Republic of Korea. 5Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA.
6
Cavendish Laboratory, University of Cambridge, Cambridge, UK. 7Instituto de Ciencia Molecular, Universidad de Valencia, Paterna, Spain. 8Department of
Physics, Harbin Institute of Technology, Harbin, China. 9Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK. 10These authors
contributed equally: Young-Hoon Kim, Sungjin Kim, Arvin Kakekhani. ✉e-mail: [email protected]; [email protected]
a b
FA1–xGAx GA
Pb
Br
C
N
H
c d 100
80
60
Intensity (a.u.)
Energy (meV)
40
20
–20
10 15 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1.0
2θ (°) GA content
Fig. 1 | Structure of FA1–xGAxPbBr3 PNCs. a, A schematic illustration of the ligand-stabilized FA1–xGAxPbBr3 PNC structure. b, The modelled bulk crystal
structure of FAPbBr3. c, Measured (black) and DFT-simulated (red) XRD patterns of FAPbBr3. d, Density functional theory formation energy (blue, relative
to the precursors), internal (enthalpic) energy (red) and configurational entropic stabilization energy (black) of FA1–xGAxPbBr3 crystals (0 ≤ x ≤ 1).
improving the confinement of charge carriers inside the nano- Beyond concentrations of ~12.5%, enthalpy wins over entropy and
crystals by employing a zero-dipole guanidinium cation (CH6N3+; drives the surplus GA to the surface of the PNCs.
GA+)30,31, which provides lattice-stabilizing effect via its hydrogen As x is increased from 0 to 1, the size of FA1–xGAxPbBr3 PNCs
bonds. We exploit fine substitutional doping of formamidinium decreases from ~10 nm to ~5.1 nm (Fig. 2a and Supplementary Fig.
(CH5N2+; FA+) lead bromide (FAPbBr3) by single GA+ cations in 2). The decrease in size is also confirmed by observing a general
colloidal PNCs instead of cation alloying approaches in perovskite trend for the relative increase of the peak intensity ratio (of the
polycrystalline bulk films that have been used in solar cells32,33. The organic ligands to inorganic perovskite components) in the X-ray
increased surface stability is driven by the extra amino group in the photoelectron spectroscopy measurements (see Supplementary
GA+ due to its extra hydrogen bonds34 and more uniformly distrib- Fig. 3 and the associated discussion for more details). Increasing
uted positive charges35. Decylamine and oleic acid are also used as the GA concentration increases the enthalpy of the bulk of the
surface-binding ligands (Fig. 1a), providing an additional level of PNCs, thereby destabilizing them. To compensate for this energy
surface stabilization. We show that although adding guanidinium penalty, the PNCs increase their surface-to-bulk ratio by decreasing
(GA) to the particle is penalized from an internal energy point of their size. The PNCs are stabilized by the surrounding acid/amine
view due to its larger size, the gain in configurational entropy36 sta- ligands. In samples that lack GA, the optimal surface-to-bulk ratio
bilizes low concentrations of GA. We further reduce non-radiative is determined by the balance between surface formation energy
recombination by applying 1,3,5-tris(bromomethyl)-2,4,6-tri- cost and the stabilization imparted by surface-binding ligands. As
ethylbenzene (TBTB) overcoat, which can heal the leftover halide can be seen in Fig. 2b,c, the latter is a result of both chemical point
vacancies. We ultimately achieved a current efficiency of 108 cd A−1, interactions and dispersion interactions (involving alkyl and alke-
further increased to 205 cd A−1 by employing a hemispherical lens. nyl groups). The point interactions involve the acid (–COOH) or
amine (–NH2) groups and consist of both lone-pair interactions
Results (accompanied by lone-pair polarization)35,40 and hydrogen bonds.
Structural properties. We begin by studying how GA doping influ- Guanidinium alters this balance and drives a tendency to increase
ences the structure of FAPbBr3. We construct a computational model the surface-to-bulk ratio, leading to an increased charge carrier con-
of FAPbBr3 PNCs (see Supplementary Fig. 1 and the Methods for finement without inducing more defects on the PNC surfaces (as
details). The fully ab initio-extended bulk model (Fig. 1b) can rep- explained in the next section).
resent the FAPbBr3 PNCs and reproduce their experimental X-ray Our density functional theory (DFT) calculations indicate that,
diffraction (XRD) patterns (Fig. 1c). We calculate the formation free beyond low concentrations of GA, these cations have an energetic
energy (from precursors) of FA1−xGAxPbBr3 as x increases from 0 to preference to migrate to the surface (Fig. 2d). As the concentration
1, taking into account both enthalpic and configurational entropic of GA increases, the increase in the surface-to-bulk ratio ensures
contributions (Fig. 1d). Guanidinium is larger than FA and beyond the presence of enough surface sites, at which most of the GA cat-
the tolerance of the (lead-bromide-based) perovskite structure37–39, ions can reside (Supplementary Table 1). The inference that GA can
therefore enthalpy does not preferentially drive GA to the inside of only be incorporated into the bulk of the perovskite in low con-
the perovskite. Nonetheless, small concentrations (~12.5%) of GA centrations is supported by the GA concentration-dependent bulk
can still be dissolved in the structure due to entropy stabilization36. moduli (calculated via elastic constants using the ab initio stress–
0.05
Number of particles
0.1
0.2
0.3
0.6
0.8
0 2 4 6 8 10 12
Size (nm)
c d
e 0
f 0
1.0 0.05 0.05
0.1 0.1
Photoluminescence
0.2
0.2
0.6 0.25
0.25
0.3
0.3
0.35
0.4 0.35
0.6
0.8 0.6
0.2 1 0.8
1
0
460 480 500 520 540 560 580 600 10 15 20 25 30 35 40 45 50
Wavelength (nm) 2θ (°)
Fig. 2 | Structural and photophysical effects of GA on FA1–xGAxPbBr3 PNCs. a, Experimentally measured size distribution of FA1–xGAxPbBr3 PNCs at
0 ≤ x ≤ 1. b, Three-dimensional charge density difference plots, showing the point chemical interactions between the perovskite surface and acid (left)
or amine (right) ligands. The hydrogen and lone-pair bonds35,40 can be noted by the magenta lobes along the yellow dashed lines. Cyan and magenta
show regions of space that are depopulated or populated by electrons, respectively (as a result of the surface–ligand bonding). c, Yellow regions depict
dispersion interactions among the surface and surface-bound ligands. This image was generated using the Nelson complexity index (NCI; isovalue = 0.6)42.
d, The simulated crystal structure of a GA-rich surface of FA1–xGAxPbBr3 crystals is shown from the side (left) and top views (top-right). At the bottom
right, a two-dimensional charge density difference plot (in greyscale)—projected on the top bromide-layer plane—shows formation of hydrogen bonds
between GA and bromide (white lobes along the yellow dashed lines). e,f, A photoluminescence spectrum (e) and XRD patterns (f) of FA1–xGAxPbBr3
PNCs at 0 ≤ x ≤ 1.
strain methodology), which shows a sudden softening at higher to an amorphous-like (or with low crystallinity) phase in which
GA concentrations (see Supplementary Fig. 4 and Supplementary small core perovskite crystals are fully covered by GA and then to
Discussion 1 for more details). On the surface, the cages formed by a non-perovskite guanidinium lead bromide phase (see the discus-
the PbBr6 octahedra are broken and lack a confining cap, the GA sion below the Supplementary Table 1).
can therefore more favourably fit into the surface sites. The extra
amino group can effectively stay above the surface and favourably Defect suppression via GA doping. The surface GA population
interact with the surface bromide groups (Fig. 2d). leads to effective defect passivation. The photoluminescence quan-
The photoluminescence spectrum experiments corrobo- tum efficiency (PLQE) improves from 79.7% for FAPbBr3 to 93.3%
rate these inferences. The photoluminescence spectrum of the for FA0.9GA0.1PbBr3 PNCs (in solution) (Fig. 3a). FA0.9GA0.1PbBr3
FA0.95GA0.05PbBr3 PNCs (Fig. 2e, Supplementary Fig. 5a) is slightly PNC films also show a PLQE of 92.45% even without using core–
red-shifted compared with that of FAPbBr3 PNCs. This change shell structures both in film and solution. Defect suppression is
confirms that small concentrations of GA incorporate into FA1– directly confirmed by deep-level transient spectroscopy (DLTS).
xGAxPbBr3 crystals and expand the lattice. This is also confirmed Here, the device architecture includes indium tin oxide (ITO)/
by XRD patterns (Supplementary Fig. 6). As x increases (≥0.1), buffer hole-injection layer (Buf-HIL (ref. 2))/FA1–xGAxPbBr3 PNCs
photoluminescence spectra of FA1–xGAxPbBr3 gradually blue-shift (here, x = 0, 0.1)/1,3,5-tris(N-phenyl benzimidazole-2-yl)benzene
while the intensity of the XRD peaks drops due to the size decrease (TPBI)/LiF/Al (Fig. 3b). The DLTS spectrum shows a minimum
(Fig. 2f). At x > 0.6, the structure of the PNCs begins to change, first at 250 K, which corresponds to a defect energy transition level of
a 100 b 0.10
0
0.1
80
60
PLQE (%)
FA0.9GA0.1PbBr3/FAxGA1–x FA0.9GA0.1PbBr3/GA 0
FAPbBr3
core/shell core/shell
40
–0.05
20
0 –0.10
0 0.2 0.4 0.6 0.8 1.0 50 100 150 200 250 300
GA concentration (x) Temperature (K)
c d
Photoluminescence intensity (a.u.)
Fig. 3 | Defect analysis of FA1–xGAxPbBr3 PNCs. a, Photoluminescence quantum efficiency and schematic crystal structures (inset) of FA1–xGAxPbBr3 PNCs.
b, Deep-level transient spectroscopy data for PeLEDs based on FA1–xGAxPbBr3 PNCs at x = 0 (black) and x = 0.1 (red). c, Photoluminescence lifetimes for
FA1–xGAxPbBr3 PNCs at x = 0 (black), 0.1 (blue), 0.6 (gold) and 1 (grey). d, A DFT-derived FA1–xGAxPbBr3 quantum dot structure with a GA shell and FA core.
0.3 to 0.4 eV. This signal attenuates at x = 0.1 and the calculated (chain-length-dependent) dispersion interactions (Fig. 2c). These
defect density Nt declines from 4.93 × 1012 cm−3 to 3.10 × 1012 cm−3 interactions are the root of the surface-stabilizing effect of these
(Supplementary Table 2). ligands (see Methods for details). Guanidinium doping slightly
Guanidinium doping extends the photoluminescence lifetime in weakens the binding of these ligands (see Supplementary Fig.
FA0.9GA0.1PbBr3 (~113 ns) compared with FAPbBr3 (~88 ns) (Fig. 3c, 9, Supplementary Fig. 10 and the associated discussion, and the
Supplementary Fig. 5b). Our defect suppression scheme increases: Methods); this is another indication that incorporating GA stabi-
(1) the critical bias Vc, as measured by the magnetophotocurrent in lizes the surface internally and decreases its reactivity toward exter-
our PeLEDs (Supplementary Fig. 7a,b); (2) the thermal stability, as nal agents. At x = 0.1, the PNCs are relatively large (Fig. 2a), the GA
determined by thermogravimetric analysis (Supplementary Fig. 7c); induces both bulk and surface stabilization, and is uniformly dis-
(3) the photostability, with a smaller degree of attenuation in the tributed. Most of the surface is still covered by FA and, due to steric
shoulder of the photoluminescence spectrum peak at lower-energy hindrance, ligands can only bind to a limited number of surface sites
states (Supplementary Fig. 7d–f); and (4) the exciton binding and thus selectively bind to FA-sites, unaffected by the added GA
energy, as calculated from the temperature-dependent photolumi- (Supplementary Table 1). The positive effect of 10% GA is due to
nescence (Supplementary Fig. 7g–j and Supplementary Fig. 8). increased surface stability, reduced defects and increased electron–
Guanidinium stabilizes the PNC surfaces by increasing the hole confinement, in addition to the bulk entropy stabilization.
number of hydrogen bonds (as a result of the extra amino group By increasing the GA content and the surface-to-bulk ratio, the
relative to FA) with the undercoordinated surface bromide. We bulk-stabilizing effect of GA attenuates; nevertheless, as the PNC
have determined that the surface of the PNC has an AX termination surfaces become dominantly GA terminated, its surface-stabilizing
(see Supplementary Fig. 1 and Supplementary Discussion 2). We effect increases (Supplementary Table 1). Consequently, at x = 0.6
define a cohesive energy metric for the top surface AX layer (see (with a fully GA-covered surface), the PNC still showed a high
Supplementary Discussion 2) and use it to evaluate the increase in PLQE of 92.4% in solutions and 91.55% in films. At x > 0.6, the crys-
GA-driven surface stability. The change in this quantity (relative to tallinity of the sample decreased, the perovskite phase was desta-
no-GA surfaces) is around −350 meV (per GA) for extended sur- bilized, new diffraction peaks appeared and the PLQE dropped
faces (as in the basal planes of large PNCs) and around −390 meV (Figs. 2f and 3a). Such a departure from the perovskite structure
for the very small quantum dots that we have directly modelled (Fig. on increasing GA content is related to the tendency of guanidin-
3d), due to their greater undercoordination (for example, in corners ium halide perovskites to crystalize in non-perovskite structures,
and edges) relative to extended surfaces. Here, a negative value for a which was previously addressed in the literature for iodoplum-
change in cohesive energy means greater surface stabilization. bates39. Our calculations also confirm this for the bromoplumbates
Density functional theory simulations of surface-binding (see Supplementary Fig. 11 and Methods for details). Our PNC
ligands reveal relatively strong point interactions (−0.6 to materials design strategy for light-emitting diodes (LEDs) can be
−0.7 eV) with the surface (Fig. 2b), accompanied by additional extended to halide perovskites with other halides and cations; to
10–1 101
10–2
10–1
10–3
10–4 10–3
0 1 2 3 4 5 6 2 3 4 5 6
Voltage (V) Voltage (V)
c 100 d 25
80 20
Current efficiency (cd A–1)
60 15
EQE (%)
40 10
20 5
0 0
2.4 2.8 3.2 3.6 4.0 2.4 2.8 3.2 3.6 4.0
Voltage (V) Voltage (V)
e 100 f
Electroluminescence intensity (a.u.)
1.0
80
P o w e r e f f i c i e n c y (lm W–1)
0.8
60
0.6
40
0.4
20 0.2
0 0
2.4 2.8 3.2 3.6 4.0 400 440 480 520 560 600
Voltage (V) Wavelength (nm)
Fig. 4 | Characteristics of PeLEDs based on FA1–xGAxPbBr3 PNCs. a–f, Current density (a), luminance (b), current efficiency (c), external quantum
efficiency (d), power efficiency (e) and electroluminescence spectrum (f) of PeLEDs based on FA1–xGAxPbBr3 PNCs (0 ≤ x ≤ 1).
showcase this, we have experimentally studied methylammonium GA can suppress both the bulk and surface defects, with minimal
lead bromide (MAPbBr3) PNCs. About 10% GA can be incorpo- changes to the dimensionality and composition, and can simulta-
rated into MAPbBr3 crystals, inducing red-shifted photolumi- neously increase the radiative recombination of the colloidal PNCs.
nescence. Beyond ~10%, GA is driven to the surface and reduces The use of GA to passivate the defects in MAPbI3-based poly-
the size of the PNCs, inducing blue-shifted photoluminescence crystalline bulk films for solar cells has been reported32,33. In our
(Supplementary Fig. 12). The GA leads to effective defect passiv- work we: (1) synthesize colloidal PNCs rather than perovskite
ation and improved PLQE in MAPbBr3 PNCs. To further indicate polycrystalline bulk films, thus the GA—in addition to passivating
the novel effects induced by the doped GA cations on colloidal defects—simultaneously controls the size of the PNCs and enhances
PNCs, we experimentally studied FAPbBr3 PNCs with other types radiative recombination; (2) understand why GA can be incorpo-
of organic cations such as butylammonium bromide, octylammo- rated into the PNC in small concentrations (~10%), above which
nium bromide, benzylammonium bromide and phenethylammo- it migrates to the surface outermost layer of PNC; and (3) illustrate
nium bromide (Supplementary Fig. 13). As the content of these competing enthalpic and entropic effects for GA incorporation in
organic cations increases (>0.2), the PNCs show limited improve- the bulk and show that such a mixed phase is entropy stabilized.
ment in PLQE (<86%) and several different shoulder peaks in pho-
toluminescence spectrum due to various sizes or compositions of Achieving highest LED efficiencies. The electroluminescence
crystals. These results indicate that GA—featuring only one extra efficiency of our PeLEDs (structure: ITO/Buf-HIL/FA1–xGAxPbBr3
amino group and mainly residing on the surface of the colloidal PNCs/TPBI/LiF/Al) increased from 61.3 to 95.7 cd A−1 (Fig. 4) as x
PNCs—is a well-controlled materials alloying concept. The doped increased from 0 to 0.1. As x increases above 0.1, the current densi-
Br vacancy filling
b c 1,000
Buf-HIL 1
ITO
0.1
0 5,000 10,000 15,000 20,000 25,000
Luminance (cd m–2)
d 100 e 1,000
Power efficiency (lm W–1)
100
10
EQE (%)
10
1
Without TBTB 1
With TBTB
With TBTB and HSL
0.1 0.1
0 5,000 10,000 15,000 20,000 25,000 0 5,000 10,000 15,000 20,000 25,000
Luminance (cd m–2) Luminance (cd m–2)
f 0° g
20
Simulation
30°
Measured
16
Lambertian
Number of devices
12
60°
8
0
90° 80 90 100 110
Maximum CE (cd A–1)
Fig. 5 | Characteristics of PeLEDs with a TBTB interlayer. a, DFT-derived mechanism for bromide vacancy healing process driven by TBTB molecules on
GA-terminated FAPbBr3 surface. The debrominated radical can then achieve greater stability via further hydrogenation. The reaction energies (negative
means exothermic) are shown by ΔE. b, Device structure of (x = 0.1) PeLEDs with TBTB interlayer. c–e, Current efficiency (c), external quantum efficiency
(d) and power efficiency (e) of PeLED devices (x = 0.1) with or without a TBTB interlayer and a hemispherical lens (HSL). The insets in c are photographs
of operating devices with TBTB, without (left) and with (right) a hemispherical lens (scale bar, 1 mm). f, Angular intensity profiles for simulated emission,
measured electroluminescence emission and Lambertian emission according to the viewing angles. g, Current efficiency histogram and photograph (inset;
scale bar, 1 cm) of an operating large-area PeLEDs (3 cm × 3 cm pixel) with TBTB interlayer (x = 0.1).
ties, luminance and electroluminescence efficiencies of the PeLEDs increased surface-to-bulk ratio (Fig. 2a). The increased number of
gradually decrease; this trend can be ascribed to an increased ratio these insulating ligands hinders charge transport to the PNCs and
of insulating organic ligands surrounding the PNCs due to the thereby reduces the electroluminescence efficiency41.
Voltage (V)
3.6
3.4
120 120
L /L0 (%)
L /L0 (%)
3.2
100 100
3.0
0 20 40 60 80 100 120 140 160
Time (min)
–2
@100 cd m (0.009 mA)
80 80 –2
@200 cd m (0.017 mA)
–2
@500 cd m (0.027 mA)
60 60 –2
@1,000 cd m (0.053 mA)
c 160 d 160
Encapsulated Without annealing
In air (relative humidity: 10%) Annealing at 40 °C
140 140
In air (relative humidity: 50%) Annealing at 60 °C
Annealing at 80 °C
120 120
L /L0 (%)
L /L0 (%)
100 100
80 80
60 60
Fig. 6 | Device lifetime of PeLEDs. a, The device lifetimes of PeLEDs based on FA0.9GA0.1PbBr3 PNCs and FAPbBr3 PNCs at an initial luminance (L0) of 100
cd m–2. b, The device lifetimes and operating voltages (inset) of PeLEDs based on FA0.9GA0.1PbBr3 PNCs under different initial measurement luminance
(applied current). c, The device lifetimes of PeLEDs based on FA0.9GA0.1PbBr3 PNCs at an initial luminance of 100 cd m–2 under various environmental
conditions. d, The device lifetimes of PeLEDs based on FA0.9GA0.1PbBr3 PNCs at an initial luminance of 100 cd m–2 with different thermal annealing
temperatures of devices.
We extended our strategy to further suppress surface defects and devices—without and with an outcoupling hemispherical lens—
minimize non-radiative recombination losses in the FA0.9GA0.1PbBr3 can reach EQEs of 30.2% and 55.61%, respectively (provided that
PNC films by introducing TBTB interlayers (~5 nm) between the the PLQE of PNC films is ~1 and absorption loss of the emitting
PNC films and the TPBI layers, which can act as a bromide vacancy layer is negligible) (Supplementary Fig. 15). These are the highest
healing agent and suppress surface defects in the PNC films. As efficiencies so far reported among PeLEDs based on either poly-
can be seen in Fig. 5a, a TBTB molecule can readily deposit its crystalline bulk films or PNCs and surpass even the highest current
bromine into a surface bromide vacancy. The debrominated radi- efficiency of conventional III–V and II–VI inorganic quantum dot
cal can then become hydrogenated in the environment containing LEDs (Supplementary Fig. 16 and Supplementary Tables 3 and 4).
acid ligands surrounding the PNCs and gets further stabilized (see We also fabricated large-area PeLEDs (3 cm × 3 cm pixel) that used
Supplementary Discussion 2 for more details). These defect healing FA0.9GA0.1PbBr3 PNCs (Fig. 5g inset) to demonstrate the promise
effects are confirmed by a decreased defect peak intensity and Nt in the of using organic–inorganic hybrid colloidal PNCs in solid-state
DLTS measurements, by an increased photoluminescence lifetime, lighting devices and displays. Device lifetime of our PeLEDs were
and by a blue-shifted photoluminescence spectrum (Supplementary measured under various operational and environmental conditions
Fig. 14a–c, Table 2). The insulating TBTB interlayers on the PNC (Fig. 6, Supplementary Fig. 17). PeLEDs based on FA0.9GA0.1PbBr3
films can also improve the charge balance in PeLEDs by retarding PNCs and TBTB interlayers showed a lifetime (when the initial
electron injection into emitting layers. This is confirmed by mea- luminance drops to 50%) of 132 min with an initial luminance of
suring the electron current densities in electron-only devices (ITO/ 100 cd m–2, which is improved by a factor of ~5.3 relative to PeLEDs
polyethylenimine ethoxylated (10 nm)/FA0.9GA0.1PbBr3 PNCs with based on FAPbBr3 PNCs (lifetime = 25 min) and ~8 relative to the
or without TBTB/TPBI/LiF/Al), by measuring hole current densi- previously reported highest-efficiency PeLEDs based on FAPbBr3
ties in hole-only devices (ITO/Buf-HIL/FA0.9GA0.1PbBr3 PNC films PNCs (lifetime = 18 min)24.
with or without TBTB/Tris(4-carbazoyl-9-ylphenyl)amine (50 nm)/
MoO3/Al) (Supplementary Fig. 14d,e). Furthermore, capacitance– Conclusions
voltage characteristics in PeLEDs corroborate the delay in electron We developed a comprehensive strategy that leads to a consider-
injection on inserting the TBTB interlayer (Supplementary Fig. 14f). able increase in the luminescence efficiency of PNCs. This strategy
PeLEDs based on FA0.9GA0.1PbBr3 PNCs and TBTB interlayers reach makes it possible to simultaneously (1) decrease the non-radiative
a maximum current efficiency of 108 cd A−1 and an EQE = 23.4%, charge recombination by comprehensive defect suppression and
calculated by using the full angular electroluminescence distribution bulk entropy stabilization and (2) increase the radiative recombi-
(Fig. 5b–f). The distribution of current efficiency obtained among nation of charge carriers due to increased excitonic confinement.
53 devices shows great reproducibility (Fig. 5g). We further improve First, we used substitutional doping of GA into FAPbBr3 PNCs to
the efficiency of our PeLEDs (to current efficiency = 203 cd A−1 and incorporate an optimal proportion of GA cations into the structure.
EQE = 45.5%) by placing a light outcoupling hemispherical lens on The GA cations can reside in the bulk of the PNC in low concen-
the emitting glass substrate. Optical simulations also verify that our trations (~10%). The surplus GA then accumulates on the surface
of the PNC. Guanidinium incorporation provides bulk entropy 18. Lin, K. et al. Perovskite light-emitting diodes with external quantum
stabilization, surface stabilization (by additional hydrogen bonding efficiency exceeding 20 per cent. Nature 562, 245–248 (2018).
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