QPA2237

0.03 – 2.5 GHz 10 W GaN Power Amplifier

Product Description
Qorvo’s QPA2237 is a wideband amplifier fabricated on
Qorvo’s production 0.25um GaN on SiC process. The
QPA2237 operates from 0.03 – 2.5 GHz and provides 10W
of saturated output power with 13 dB of large signal gain
and 52% power-added efficiency.

The QPA2237 is available in a low-cost, surface-mount, 20

lead, 4x4 OVM QFN. It is ideally suited to support both QFN 4x4 mm 20L
radar and communication applications across defense and
commercial markets as well as electronic warfare. The Product Features
QPA2237 is fully matched to 50Ω at both RF ports allowing
for simple system integration. DC blocks are required on • Frequency Range: 0.03 – 2.5 GHz
both RF ports and the drain voltage must be injected • PSAT: 40 dBm at PIN = 27 dBm
through an off chip bias-tee on the RF output port.
• PAE: 52%
Lead-free and RoHS compliant. • Large Signal Gain: 13 dB
• Small Signal Gain: 18.5 dB
• Input Return Loss: 9 dB
• Output Return Loss: 9.5 dB
• Bias: VD = 32 V, IDQ = 360 mA
• Wideband Flat Power
• Package Dimensions: 4.0 x 4.0 x 0.85 mm

Performance is typical across frequency. Please

reference electrical specification table and data plots for
Functional Block Diagram more details.

Applications
• Commercial and military radar
• Communications
• Electronic Warfare

Ordering Information
Part No. Description
QPA2237 0.03 – 2.5 GHz 10 W GaN Power Amplifier
QPA2237EVBP01 Evaluation Board

Data Sheet Rev. G, July 2021 - 1 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = +32 V, IDQ = 360 mA, CW.

Parameter Min Typ Max Units

Operational Frequency Range 0.03 – 2.5 GHz
Frequency = 0.05 GHz 39.5 40.5 –
Output Power @ PIN = 27 dBm Frequency = 1.25 GHz 39.5 40.1 – dBm
Frequency = 2.5 GHz 39.5 40.4 –
Frequency = 0.05 GHz 48 65 –
Power Added Efficiency
Frequency = 1.25 GHz 48 48.5 – %
@ PIN = 27 dBm
Frequency = 2.5 GHz 48 57 –
Frequency = 0.05 GHz – 22.5 –
Small Signal Gain Frequency = 1.25 GHz – 20 – dB
Frequency = 2.5 GHz – 19 –
Frequency = 0.05 GHz – 9 –
Input Return Loss Frequency = 1.25 GHz – 13 – dB
Frequency = 2.5 GHz – 13 –
Frequency = 0.05 GHz – 10 –
Output Return Loss Frequency = 1.25 GHz – 11 – dB
Frequency = 2.5 GHz – 16 –
Gate Leakage (VD=30V, VG=−5.0V) −2.4 – – mA
Small Signal Gain Temperature Coefficient – −0.017 – dB/°C
Output Power Temperature Coefficient – −0.004 – dBm/°C
Recommended Operating Voltage: – 32 36 V

Recommended Operating Conditions

ConditioConditions
Parameter Value / Range
Drain Voltage (VD) +32 V
Drain Current (IDQ) 360 mA
Temperature (TBASE) −40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.

Data Sheet Rev. G, July 2021 - 2 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

Output Power vs. Frequency vs. VD PAE vs. Frequency vs. VD

42 80
PIN = 27 dBm Temp. = +25°C PIN = 27 dBm
41 70
40 60
39
POUT (dBm)

50

PAE (%)
38
40 Vd=25 V
37 Vd=25 V
30 Vd=28 V
Vd=28 V
36 Vd=30 V
Vd=30 V
35 20 Vd=32 V
Vd=32 V
Vd=36 V Vd=36 V
34 10
IDQ = 360 mA Temp. = +25°C IDQ = 360 mA
33 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Output Power vs. Freq vs. Input Power PAE vs. Frequency vs. Input Power
42 80
VD = 32 V, IDQ = 360 mA Temp. = +25°C VD = 32 V, IDQ = 360 mA
41 70
40
60
39
POUT (dBm)

PAE (%)

38 50
37 40
36 24dBm
30 24dBm 25dBm 26dBm 27dBm
25dBm
35
26dBm 20
34
27dBm Temp. = +25°C
33 10
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Output Power vs. Frequency vs. Temp. PAE vs. Frequency vs. Temperature
42 80
VD = 32 V, IDQ = 360 mA PIN = 27 dBm PIN = 27 dBm
41 70
60
40
POUT (dBm)

50
PAE (%)

39
40
38
30
37 -40C -40C
20
+25C +25C
36 10
+85C VD = 32 V, IDQ = 360 mA +85C

35 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. G, July 2021 - 3 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

Output Power vs. Frequency vs. IDQ PAE vs. Frequency vs. IDQ
42 80
Temp. = +25°C PIN = 27 dBm Temp. = +25°C PIN = 27 dBm
41 70
60
40
POUT (dBm)

50

PAE (%)
39
120 mA 40
38
240 mA 30
37 120 mA 240 mA 360 mA
360 mA 20
36 10
VD = 32 V VD = 32 V
35 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
45 80
VD = 32 V, IDQ = 360 mA VD = 32 V, IDQ = 360 mA
40 70
35 60
POUT (dBm)

30 50
PAE (%)

25 40 2.5 GHz
0.1 GHz
30 1.0 GHz
20
0.5 GHz 0.5 GHz
15 20 0.1 GHz
1.0 GHz Temp. = +25°C
10 2.5 GHz 10
Temp. = +25°C
5 0
-10 -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 25 30
Input Power (dBm) Input Power (dBm)

Power Gain vs. Input Power vs. Freq. Power Gain vs. Input Power vs. Temp.
28 24
Temp. = +25°C VD = 32 V, IDQ = 360 mA Freq. = 2.0 GHz
26
22
24
20
Gain (dB)

Gain (dB)

22
20 18
-40C
18
0.1 GHz 16 +25C
16 0.5 GHz
+85C
1.0 GHz 14
14
2.5 GHz
VD = 32 V, IDQ = 360 mA
12 12
-10 -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 25 30
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. G, July 2021 - 4 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

Drain Current vs. Frequency vs. Temp. Gate Current vs. Frequency vs. Temp.
700 16
PIN = 27 dBm PIN = 27 dBm
14
600

Gate Current (mA)

Drain Current (mA)

12
-40C
500 10
+25C
-40C
8
400 +85C
+25C 6
300 +85C 4
2
200
VD = 32 V, IDQ = 360 mA
0 VD = 32 V, IDQ = 360 mA
100 -2
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
700 16
VD = 32 V, IDQ = 360 mA Temp. = +25°C VD = 32 V, IDQ = 360 mA Temp. = +25°C
14
600
Gate Current (mA)
Drain Current (mA)

12
500 10
8
400
6
0.1 GHz
300 4
0.5 GHz 0.1 GHz 0.5 GHz 1.0 GHz 2.5 GHz
2
200 1.0 GHz
0
2.5 GHz
100 -2
-10 -5 0 5 10 15 20 25 30 -10 -5 0 5 10 15 20 25 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Frequency vs. IDQ Gate Current vs. Frequency vs. IDQ
700 16
Temp. = +25°C PIN = 27 dBm Temp. = +25°C PIN = 27 dBm
14
600
Gate Current (mA)
Drain Current (mA)

12 32V120mA

500 10 32V240mA

8 32V360mA
400
6
300 32V120mA 4
32V240mA 2
200 32V360mA
0
100 -2
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. G, July 2021 - 5 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Linearity
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 -10
VD = 32 V, 2.0 GHz, 10 MHz Tone Spacing VD = 32 V, 2.0 GHz, 10 MHz Tone Spacing
-10 -20

-20 -30
-40
IM3 (dBc)

IM5 (dBc)
-30
-50
-40
-60
-50
-70
-60 IDQ = 120 mA IDQ = 120 mA
-80
IDQ = 240 mA IDQ = 240 mA
-70 -90
Temp. = +25°C IDQ = 360 mA Temp. = +25°C IDQ = 360 mA
-80 -100
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. Temperature IM5 vs. Output Power vs. Temperature
0 -10
VD = 32 V, IDQ = 360 mA, 2.0 GHz, 10 MHz Tone Spacing VD = 32 V, IDQ = 360 mA, 2.0 GHz, 10MHz Tone Spacing
-10 -20

-20 -30
-40
IM3 (dBc)

IM5 (dBc)

-30
-50
-40
-60
-50 -40°C
-70 +25°C
-60 -40°C
-80 +85°C
+25°C
-70 -90
+85°C
-80 -100
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. Frequency IM5 vs. Output Power vs. Frequency
0 -10
VD = 32 V, IDQ = 360 mA, 10 MHz Tone Spacing VD = 32 V, IDQ = 360 mA, 10 MHz Tone Spacing
-10 -20

-20 -30
-40
IM5 (dBc)
IM3 (dBc)

-30
-50
-40
-60
-50 2.0 GHz -70 2.0 GHz
-60 2.5 GHz -80 2.5 GHz
-70 -90
Temp. = +25°C Temp. = +25°C
-80 -100
5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. G, July 2021 - 6 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Linearity
The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

2ND Harmonic vs. Output Power vs. Freq. 3RD Harmonic vs. Output Power vs. Freq.
0 0
Temp. = +25°C VD = 32 V, IDQ = 360 mA Temp. = +25°C VD = 32 V, IDQ = 360 mA
-5 -5
2f0 Output Power (dBc)

3f0 Output Power (dBc)

-10 -10
-15 -15
-20 -20 1.0 GHz
-25 -25 2.5 GHz
-30 -30
-35 -35
-40 1.0 GHz -40
-45 2.5 GHz -45
-50 -50
15 20 25 30 35 40 45 15 20 25 30 35 40 45
Output Power per Tone (dBm) Output Power per Tone (dBm)

2ND Harmonic vs. Output Power vs. Temp. 3RD Harmonic vs. Output Power vs. Temp.
0 0
-5 VD = 32 V, IDQ = 360 mA Freq. = 1.0 GHz VD = 32 V, IDQ = 360 mA Freq. = 1.0 GHz
-5
2f0 Output Power (dBc)

3f0 Output Power (dBc)

-10 -10
-15 -15
-20 -20
-25 -25
-30 -30
-40°C
-35 -35 -40°C
+25°C
-40 -40 +25°C
+85°C
-45 -45 +85°C
-50 -50
15 20 25 30 35 40 45 15 20 25 30 35 40 45
Output Power per Tone (dBm)
Output Power per Tone (dBm)

2ND Harmonic vs. Output Power vs. VD/ID. 3RD Harmonic vs. Output Power vs. VD/ID.
0 0
Temp. = +25°C Temp. = +25°C Freq. = 1.0 GHz
-5 -5
2f0 Output Power (dBc)

3f0 Output Power (dBc)

-10 -10
-15 -15
-20 -20
-25 -25
-30 -30
-35 -35
32V120mA 32V120mA
-40 -40
32V360mA 32V360mA
-45 Freq. = 1.0 GHz -45
-50 -50
15 20 25 30 35 40 45 15 20 25 30 35 40 45
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. G, July 2021 - 7 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Small Signal

The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11)

Gain vs. Frequency vs. Temperature Gain vs. Frequency vs. VD

28 28
VD = 32 V, IDQ = 360 mA Temp. = +25°C IDQ = 360 mA
26 26
24 24
22 22

S21 (dB)
S21 (dB)

20 20
18 18
16 16
-40C
14 14
+25C
12 12
+85C 25V 28V 30V 32V 36V
10 10
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Input Return Loss vs. Freq. vs. VD Output Return Loss vs. Freq. vs. VD
0 0
Temp. = +25°C IDQ = 360mA Temp. = +25°C IDQ = 360 mA
-5 -5
32V 30V 28V 25V 36V
-10 -10
S22(dB)
S11 (dB)

-15 -15

-20 -20

-25 -25 25V 28V 30V 32V 36V

-30 -30
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Input Return Loss vs. Freq. vs. Temp. Output Return Loss vs. Freq. vs. Temp.
0 0
VD = 32 V, IDQ = 360 mA VD = 32 V, IDQ = 360 mA
-5 -5

-10 -10
S22 (dB)
S11 (dB)

-15 -15

-20 -20
-40C -40C
-25 +25C -25 +25C
+85C +85C
-30 -30
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. G, July 2021 - 8 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Performance Plots – Large Signal (CW), On-board vs. External Coaxial Bias-T

The plots reflect performance measured with an external coaxial bias tee and DC blocks
(See application circuit on page 11 and 13)

Output Power vs. Freq vs. Input Power PAE vs. Frequency vs. Input Power
42 80
Temp. = +25°C VD = 30V, IDQ = 360mA VD = 30V, IDQ = 360mA
41 70
40 60
POUT (dBm)

39 50

PAE (%)
38 40
37 External Bias-T 30 External Bias-T

36 On-Board Bias-T 20 On-Board Bias-T

35 10
PIN = 27dBm Temp. = +25°C PIN = 27dBm
34 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. G, July 2021 - 9 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = +32 V (CW), Freq = 2.0 GHz, 5.948 °C/W
PIN = 27 dBm, IDQ = 360 mA, ID_Drive = 648 mA,
Channel Temperature (TCH) (Under RF drive) (2) POUT = 40 dBm, PDISS = 10.9 W 149.8 °C

Notes:
1. Thermal resistance referenced to back of package at 85 °C.
2. IR scan equivalent channel temperature. Refer to the following document: GaN Device Channel Temperature, Thermal
Resistance, and Reliability Estimates

Power Dissipation and Maximum Gate Current

QPA2237 Ig_max vs. TCH

40

35

Gate Current Maximum (mA)

30

25

20

15

10

0
110 120 130 140 150 160 170 180
Channel Temperature TCH (°C)

Data Sheet Rev. G, July 2021 - 10 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Application Circuit (Coaxial input DC Block and Coaxial Output Bias-T Option)

Notes:
1. Coaxial input DC block (C7) is used for input port (RF In.)
2. External wide bandwidth Bias-Tee is used for output port (RF Out). VD is applied through the output Bias-
Tee.
3. Data contained herein taken with this EVB configuration.

Bias Up Procedure Bias Down Procedure

1. Set ID limit to 700mA, IG limit to 15mA 1. Turn off RF signal
2. Set VG to -5.0V 2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD +32V 3. Set VD to 0V
4. Adjust VG more positive until IDQ = 360mA (VG ~ -2.1V 4. Turn off VD supply
Typical)
5. Turn off VG supply
5. Apply RF signal

Data Sheet Rev. G, July 2021 - 11 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

EVB Layout (Coaxial input DC Block and Coaxial Output Bias-T Option)

Bill of Materials
Reference Des. Value Description Manuf. Part Number
C1 1 uF Cap, 1206, 50V, 5%, X7R Various –
C3 1000 pF Cap, 0402, 100V, 10%, X7R Various –
C7 DC Block Various –
R1 – R2 10Ω Res, 0402, 5%, SMD Various –

Data Sheet Rev. G, July 2021 - 12 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Application Circuit (On-Board DC Blocks and Output Bias-T Option)

Notes:
1. Performance of the DUT with surface-mount DC blocks and bias tee components may be degraded relative to
the coaxial option. These components should be optimized for the desired operational bandwidth.
2. EVBs provided for customer evaluation are provided with this configuration.

Data Sheet Rev. G, July 2021 - 13 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

EVB Layout (On-Board DC Blocks and Output Bias-T Option)

Bill of Materials for On-Board Bias-Tee

Reference Des. Value Description Manuf. Part Number
C1, C2 1 uF Cap, 1206, 50V, 5%, X7R Various –
C3 – C6 1000 pF Cap, 0402, 100V, 10%, X7R Various –
L1 330 nH Ind, 1206, 850mA, 5% Various –
R1 – R4 10Ω Res, 0402, 5%, SMD Various –

Data Sheet Rev. G, July 2021 - 14 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Mechanical Information

16 17 18 19 20
15 1
14 2
13 3
12 4
11 5
10 9 8 7 6

NOTES (UNLESS OTHERWISE SPECIFIED): TOLERANCES

1. ALL DIMENSIONS ARE IN MM .XX = .25
2. PACKAGE LEADS ARE GOLD PLATED .XXX = .127
3. PART IS MOLD ENCAPSULATED .XXXX = .0254
4. PART MARKING
• 2237: PART NUMBER
• YY: PART ASSEMBLY YEAR
• WW: PART ASSEMBLY WEEK
• XXX: BATCH ID

Pin Description
Pin No. Symbol Description
1, 2, 4 – 12, 14 – 16, 18 – 20 N/C No connection
3 RF IN Input; matched to 50 Ω.
13 RF OUT / VD Output and Drain Voltage; matched to 50 Ω.
Gate Voltage, bias network is required; see recommended
17 VG
Application Information on page 11
Ground Paddle. Multiple vias should be employed on the PCB to
21 GND
minimize inductance and thermal resistance.

Data Sheet Rev. G, July 2021 - 15 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Absolute Maximum Ratings

Parameter Value / Range
Drain Voltage (VD) 40 V
Gate Voltage Range (VG) -8 to 0 V
Drain Current (ID) 1.2 A
Gate Current (IG) See plot page 10
Power Dissipation (PDISS), 85 °C 19 W
Input Power (PIN), CW, 50 Ω, 85 °C 33 dBm
Input Power (PIN), CW, VSWR 3:1,
33 dBm
VD = 32 V, 85 °C
Max VSWR, CW, PIN = 27 dBm,
10:1
VD = 32 V, 85 °C (Load)
Mounting Temperature
260 °C
(30 Seconds)
Storage Temperature -55 to 150 °C
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.

Recommended Soldering Temperature Profile

Data Sheet Rev. G, July 2021 - 16 of 17 - www.qorvo.com

 QPA2237
0.03 – 2.5 GHz 10 W GaN Power Amplifier

Handling Precautions
Parameter Rating Standard Caution!
ESD – Human Body Model (HBM) Class 3A JEDEC Standard JESD22-A114 ESD-Sensitive Device
ESD – Charge Device Model (CDM) Class C3 JESD22-C101
MSL – Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020

Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes. The use of no-
clean solder to avoid washing after soldering is highly recommended.

RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: [email protected]

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. G, July 2021 - 17 of 17 - www.qorvo.com