BASIC ELECTRONICS ENGINEERING MODULE-1
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BASIC ELECTRONICS ENGINEERING MODULE-1
1. A semiconductor is formed by _____ bonds.
(A) covalent (B) electrovalent
(C) co-ordinate (D) none of the above
2. A semiconductor has _____ temperature coefficient of resistance.
(A) positive (B) zero
(C) negative (D) none of the above
3. The most commonly used semiconductor is
(A) germanium (B) silicon
(C) carbon (D) sulphur
4. A semiconductor generally has valence electrons.
(A) 2 (B) 3 (C) 6 (D) 4
5. When a pentavalent impurity is added to a pure semiconductor, it becomes
(A) an insulator (B) an intrinsic semiconductor
(C) p-type semiconductor (D) n-type semiconductor
6. Addition of pentavalent impurity to a semiconductor creates
(A) free electrons (B) holes
(C) valence electrons (D) bound electrons
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7. A pentavalent impurity has _____ valence electrons.
(1) 3 (B)5
(C) 4 (D) 6
8. A trivalent impurity has _____ valence electrons.
(A) 4 (B) 5 Electronics MCQs
(C) 6 (D) 3
9. Addition of trivalent impurity to semiconductor creates many
(A) holes (B) free electrons
(C) valence electrons (D) bound electrons
10. A hole in a semiconductor is defined as……..
(A) a free electron
(B) the incomplete part of an electron pair bond
(C) a free proton
(D) a free neutron
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BASIC ELECTRONICS ENGINEERING MODULE-1
11. As the doping to a pure semiconductor increases, the bulk resistance of the
semiconductor
(A) remains the same (B) increases
(C) decreases (D) none of the above
12. A hole and electron in close proximity would tend to
(A) repel each other (B) attract each other
(C) have no effect on each other (D) none of the above
13. In a semiconductor current conduction is due………..
(A) only to holes (B) only to free electrons
(C) to holes and free electrons (D) none of the above
14. The random motion of holes and free electrons due to thermal agitation is called
(A) diffusion (B) pressure
(C) ionization (D) none of the above
15. The battery connections required to forward bias a pn junction are
(A) +ve terminal to p and -ve terminal to n
(B) +ve terminal to p and +ve terminal to n
(C) '-ve terminal to p and + ve terminal to n
(D) none of the above
16. The barrier voltage at a pn junction for germanium is about
(A) 3.5 V (B) 3V
(C) zero (D) 0.3 V
17. In the depletion region of a pn junction, there is a shortage of
(A) acceptor ions (B) holes and electrons
(B) donor ions (D) none of the above
18. A reverse biased pn junction has
(A) very narrow depletion layer (B) almost no current
(C) very low resistance (D) large current flow
19. A pn junction acts as a
(A) controlled switch (B) bidirectional switch
(C) unidirectional switch (D) none of the above
20. A crystal diode has
(A) one pn junction (B) two pn junctions
(C) three pn junctions (D) none of the above
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BASIC ELECTRONICS ENGINEERING MODULE-1
ANSWERS
1.A 2.C 3. B 4. D 5. D 6. A 7. B 8.D 9.A 10.B
11.C 12.B 13. C 14.A 15.A 16.D 17.B 18.B 19.C 20.A
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BASIC ELECTRONICS ENGINEERING MODULE-1