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KTC 1815

This document provides technical data for the KTC1815 epitaxial planar NPN transistor. It is intended for general purpose and switching applications. Key features include excellent hFE linearity, low noise, and being complementary to the KTA1015 transistor. Maximum ratings and electrical characteristics such as gain, saturation voltage, transition frequency, and noise figure are provided.

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Haendel Ramirez
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219 views3 pages

KTC 1815

This document provides technical data for the KTC1815 epitaxial planar NPN transistor. It is intended for general purpose and switching applications. Key features include excellent hFE linearity, low noise, and being complementary to the KTA1015 transistor. Maximum ratings and electrical characteristics such as gain, saturation voltage, transition frequency, and noise figure are provided.

Uploaded by

Haendel Ramirez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR KTC1815

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.


SWITCHING APPLICATION.

FEATURES
・Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
・Low Noise : NF=1dB(Typ.). at f=1kHz.
・Complementary to KTA1015.

MAXIMUM RATING (Ta=25℃)


CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
DC Current Gain
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz - 50 - Ω
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB
Note : hFE(1) Classification Y:120～240, GR:200～400

2005. 3. 22 Revision No : 0 1/3


KTC1815

2005. 3. 22 Revision No : 0 2/3


KTC1815

2005. 3. 22 Revision No : 0 3/3

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