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Experiments 6
BJT Transistor characteristics

Object:
• Study the BJT Transistor Operation
• Study the Input and Output Characteristics

Theory :
The BJT (bipolar junction transistor) is constructed with three doped semiconductor
regions operated by two pn junctions, as shown in the epitaxial planar structure in the
following figure (1-a).

The three regions are called emitter, base, and collector. Physical representations of
the two types of BJTs are shown in figure (1) part (b) and (c). One type consists of two
n regions separated by a p region (npn), and the other type consists of two p regions
separated by an n region (pnp). The pn junction joining the base region and the emitter
region is called the base-emitter junction. The pn junction joining the base region and
the collector region is called the base-collector junction, as indicated in figure (1-b). A
wire lead connects to each of the three regions, as shown. These leads are labeled E, B.
and C for emitter, base, and collector respectively. The base region is lightly doped and
very thin compared to the heavily doped emitter and the moderately doped collector
regions.

Figure(1)
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BASIC TRANSISTOR OPERATION

The following figure(2) shows the schematic symbols for the npn and pnp bipolar
junction transistors. The term bipolar refers to the use of both holes and electrons as
carriers in the transistor structure.

Figure (2)
In order for the transistor to operate properly as an amplifier, the two pn junctions
must be correctly biased with external dc voltages. In this section, we use the npn
transistor for illustration. The operation of the pnp is the same as for the npn except
that the roles of the electrons and holes, the bias voltage polarities, and the current
directions are all reversed.

The following figure(3) shows the proper bias arrangement for both npn and pnp
transistors for active operation as an amplifier. Notice that in both cases the base-
emitter (BE) junction is forward-biased and the base-collector (BC) junction is reverse-
biased.

Figure (3)
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Collector Characteristic Curves

Using a circuit like that shown in figure (4-a) below, you can generate a set of collector
characteristic curves that show how the collector current, IC varies with the collector-
to-emitter voltage, VCE for specified values of base current, lB. Notice in the circuit
diagram that both VBB and VCC are variable sources of voltage. Assume that VBB is set to
produce a certain value of IB and VCC is zero. For this condition, both the base-emitter
junction and the base-collector junction are forward-biased because the base is at
approximately

Figure(4)
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0.7 V, while the emitter and the collector are at 0 V. The base current is through the
base-emitter junction because of the low impedance path to ground and, therefore, IC
is zero. When both junctions are forward-biased, the transistor is in the saturation
region of its operation.

As Vcc is increased, VCE increases gradually as the collector current increases. This is
indicated by the portion of the characteristic curve between points A and B in the
following figure (b). Ic increases as Vcc is increased because VCE remains less than 0.7 V
due to the forward-biased base-collector junction.

Ideally, when VCE exceeds 0.7 V, the base-collector junction becomes reverse-biased
and the transistor goes into the active or linear region of its operation. Once the base-
collector junction is reverse-biased, Ic levels off and remains essentially constant for a
given value of IB as VCE continues to increase. Actually, Ic increases very slightly as VCE
increases due to widening of the base-collector depletion region. This results in fewer
holes for recombination in the base region which effectively causes a slight increase in
βDC . This is shown by the portion of the characteristic curve between points B and C in
part (b). For this portion of the characteristic curve, the value of Ic is determined only
by the relationship expressed as Ic = βDC IB . When VCE reaches a sufficiently high voltage,
the reverse-biased base-collector junction goes into breakdown; and the collector
current increases rapidly as indicated by the part of the curve to the right of point C in
part (b). A transistor should never be operated in this breakdown region.

A family of collector characteristic curves is produced when Ic versus VCE is plotted for
several values of IB , as illustrated in previous figure (c). When IB = 0, the transistor is
in the cutoff

region although there is a very small collector leakage current as indicated. The amount
of collector leakage current for IB = 0 is exaggerated on the graph for illustration.
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Input characteristic curve: Used to describe the relation between VBE and IB. As shown
in Figure (5), when VBE exceeds 0.6V IB will be dramatically increased.

Figure(5)

DC load line

Cutoff and saturation can be illustrated in relation to the collector characteristic curves
by the use of a load line. The following figure shows (6) a dc load line drawn on a family
of curves connecting the cutoff point and the saturation point. The bottom of the load
line is at ideal cut-off where Ic = 0 and VCE = Vcc. The top of the load line is at saturation
where Ic=IC(sat) and V CE = VCE(sat) . In between cutoff and saturation along the load line
is the active region of the transistor's operation.

Figure(6)
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Procedures:
1- Connect the circuit shown below(Figure 7).

A 0.000
- +
5kΩ
IB
-
IC
+
0.056u A
10kΩ

0.5 V
12 V
VBB
VBE +
12.005 V
-
+
0.500 V DC 10MOhm
- VCE

+
1.276u A
-

IE

Figure(7)

2- Adjust VBB, where beta=100 as table below,(Table 1).

3- View IB, IC and IE, and then record the result

VBB IB IC IE VBE VCE

0.5V

1V

2V

3V

Table (1)
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Discussion :
1. Plot the V-I characteristic curve of the transistor for each cases (i/p & o/p)

2. From physical analysis why IB is far smaller than IC ?

3. How must the two transistor junctions be biased for proper transistor amplifier

operation?
4. What are the regions indicated in the output characteristics of the transistor?

And For amplifier circuit, in which region should the transistor operate?
5. Which of the transistor currents is always the largest? Which is always the

smallest? Which two currents are relatively close in magnitude?