Course Course Course L T P C

20ECC532J SOLID STATE DEVICES AND MODELING C Professional Core

Code Name Category 3 0 2 4

Pre-requisite Co-requisite Progressive

Nil Nil Nil
Courses Courses Courses
Course Offering Department Electronics and Communication Engg Data Book / Codes/Standards Nil

Course Learning Rationale (CLR): The purpose of learning this course is to: Learning Program Learning Outcomes (PLO)

CLR-1 : Identify the basic concept of quantum mechanics 1 2 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

CLR-2 : Identify the applications of quantum mechanics in devices
CLR-3 : Identify the applications of optical devices

Multicultural Competence
Level of Thinking (Bloom)

Expected Proficiency (%)

Community Engagement
Expected Attainment (%)

Disciplinary Knowledge

Self-Directed Learning
CLR-4 : Create insights to the concepts nano and optical devices

Analytical Reasoning

Scientific Reasoning

Reflective Thinking

Life Long Learning

Ethical Reasoning

Leadership Skills
CLR-5 : Analyze the working principle of homo and hetero junctions

Problem Solving
Critical Thinking

Research Skills
CLR-6 : Utilize the concepts in physics for the understanding of VLSI technology

Team Work

ICT Skills
Course Learning Outcomes (CLO): At the end of this course, learners will be able to:
CLO-1 : Identify the principle of Schrodinger's Wave Equation 2 80 70 H H - - - - - - - - - - - - H
CLO-2 : Analyze the concept of energy band diagram 2 85 75 H - - - - - - - - - - - - - -
CLO-3 : Apply quantum theory to semiconductors and model it for CAD tools 2 75 70 H H - H - - - - - - - - - - -
CLO-4 : Apply physical effects in PN Junctions and model it using CAD tools 2 85 80 H H - - - - - - - - - - - - -
CLO-5 : Identify the basic concepts used in MOSFET and design it using CAD tools 2 85 75 H - H - - - - - - - - - - - -
CLO-6 : Apply the concepts of quantum physics in optical devices 2 80 70 - H - H - - H - - - - - - - H

Introduction to Quantum Mechanics (15 Unit-II: Semiconductor in Equilibrium and Unit-III: The P-N and Metal Semiconductor Unit-IV: Metal Insulator Semiconductor Unit-V: Optical Devices
Duration (hour)
Hours) Non-equilibrium (15 Hours) Junction (15 Hours) Devices (15 Hours) (15 Hours)
Principles of Quantum Mechanics &Energy
SLO-1 Charge Carriers in Semiconductors Basic Structure of the PN Junction Energy-Band Diagrams Optical Absorption
Quanta
S-1
Equilibrium Distribution of Electrons
SLO-2 Wave-Particle Duality Built-in Potential Barrier at zero bias Depletion Layer Thickness Photon Absorption Coefficient
and Holes
The no and p0, Equations
SLO-1 Schrodinger's Wave Equation Electric Field at zero bias Work Function Differences The PN Junction Solar Cell
S-2
The Intrinsic Carrier Concentration & The
SLO-2 Physical Meaning of the Wave Function Problem Solving Problem Solving The Heterojunction Solar Cell
Intrinsic Fermi-Level Position
Applications of Schrodinger's Wave Space charge width at zero bias
SLO-1 The Extrinsic Semiconductor Threshold Voltage Amorphous Silicon Solar Cells
Equation
S-3
Equilibrium Distribution of Electrons
SLO-2 Electron in Free Space Reverse Applied Bias Flat-Band Voltage Problem Solving
and Holes
SLO-1 Lab 10: Learning to Design 2D MOSFET Lab 13: Design and Analyze DC and AC
S Lab 4: Learning to Design Doping and Lab 7: Learning to Design 2D PN-Junction
Lab 1: Introduction to CAD Tool Structure Characteristics of N-Type lightly doped drain
4-5 SLO-2 Meshing Structure
(LDD) MOSFET
Space Charge Width and Electric Field at Capacitance-Voltage Characteristics
SLO-1 The Infinite Potential Well The n0p0, Product Photodetectors
S-6 reverse bias
SLO-2 Allowed and Forbidden Energy Bands The Fermii-Dirac lntegral Nonuniformly Doped Junctions Problem Solving PIN Photodiode
Position of Fermi Energy Level Avalanche Photodiode
SLO-1 The Kronig-Penney Model One-Sided Junctions Ideal C-V Characteristics
S-7
SLO-2 The k-Space Diagram Degenerate and Nondegenerate Problem Solving Problem Solving Problem Solving

SRM Institute of Science and Technology - Academic Curricula – M.Tech (VLSI Design) –2020 Regulations 9
 Semiconductors
SLO-1 The Energy Band and Linearly Graded Junction Frequency Effects Photoluminescence
S-8 Carrier Generation
SLO-2 The Band Model Hyperabrupt Junctions Problem Solving Applications of Photoluminescence
SLO-1 Lab 5: Learning to Design 3D Structure using
S Lab 8: Learning the overview of Sentaurus Lab 11: Design and Analyze DC and AC Lab 14: Learning to Design 3D MOSFET
Lab 2: Learning to Design 2D Boundaries CAD Tool
9-10 SLO-2 Workbench and Device Physics Characteristics of MOSFET using Workbench Structure
SLO-1 Drift Current Carrier Recombination PN Junction Current The Basic MOSFET Operation Electroluminescence
S-11
SLO-2 Problem Solving Problem Solving Problem Solving Problem Solving Problem Solving
SLO-1 Electron Effective Mass Characteristics of Excess Carriers The Schottky Barrier Diode ts Nonideal Effects Light Emitting Diodes
S-12
SLO-2 Problem Solving Problem Solving Problem Solving Applications of LED
Generation of Light
SLO-1 Concept of the Hole Ambipolar Transport Metal-Semiconductor Ohmic Contac Radiation and Hot-Electron Effects
S-13
SLO-2 Problem Solving Problem Solving Problem Solving Problem Solving Problem Solving
SLO-1 Lab 15: Design and Analyze DC and AC
S Lab 6: Designing Process simulation using Lab 9: Design and Analyze Characteristics of Lab 12: Learn to Design 2D N-Type lightly
Lab 3: Learning to Design 2D Structures Characteristics of 3D MOSFET using
14-15 SLO-2 CAD workbench PN Junction using Workbench doped drain (LDD) MOSFET using Workbench
Workbench

1. Donald Neamen, Dhrubesh Biswas, Semiconductor Physics and Devices, McGraw Hill, 4th ed, 2012 4. Nandita Dasgupta and Amitav Dasgupta , Semiconductor Devices : Modelling and Technology Prentice-Hall of India
Learning
2. S. M. Sze, Physics of Semiconductor Devices, John Wiley, 3rd ed, 2005 Pvt.Ltd; 1st ed, 2004
Resources
3. Pallab Bhattacharya, Semiconductor Opto electronics Devices, 2nd ed, PHI, 2017 5. Sentaurus Device user guide, Synopsys, 2015

Learning Assessment
Continuous Learning Assessment (50% weightage)
Bloom’s Final Examination (50% weightage)
CLA – 1 (10%) CLA – 2 (15%) CLA – 3 (15%) CLA – 4 (10%)#
Level of Thinking
Theory Theory Theory Theory Theory
Remember
Level 1 40% 40% 40% 40% 30%
Understand
Apply
Level 2 40% 40% 40% 40% 40%
Analyze
Evaluate
Level 3 20% 20% 20% 20% 30%
Create
Total 100 % 100 % 100 % 100 % 100 %
# CLA – 4 can be from any combination of these: Assignments, Seminars, Tech Talks, Mini-Projects, Case-Studies, Self-Study, MOOCs, Certifications, Conf. Paper etc.,

Course Designers
Experts from Industry Experts from Higher Technical Institutions Internal Experts
1. Mr. Anuj Kumar, Bombardier Transportation, Ahmedabad, [email protected] 1. Dr. Meenakshi, Professor of ECE, CEG, Anna University, [email protected] 1. Dr. Soumyaranjan Routray, SRMIST
2. Mr. Hariharasudhan - Johnson Controls, Pune, [email protected] 2. Dr. Venkatesan, Sr. Scientist, NIOT, Chennai, [email protected] 2. Dr. Maria Jossy, SRMIST
3. 3. 3. Dr. P. Aruna Priya, SRMIST

SRM Institute of Science and Technology - Academic Curricula – M.Tech (VLSI Design) –2020 Regulations 10