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Pas 5500-750F

The PAS 5500/750F DUV Step-and-Scan system enables 130-nm mass production using 248-nm KrF technology. It combines an improved 0.7 NA 4x reduction lens with latest multi-spot innovations in leveling and AERIAL II illumination including QUASAR and multipole illumination. The system provides a long term single machine overlay of less than 25 nm and a production throughput of 130 200-mm wafers per hour. It uses a 2 kHz 20W KrF laser for the lowest cost of operation.

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276 views3 pages

Pas 5500-750F

The PAS 5500/750F DUV Step-and-Scan system enables 130-nm mass production using 248-nm KrF technology. It combines an improved 0.7 NA 4x reduction lens with latest multi-spot innovations in leveling and AERIAL II illumination including QUASAR and multipole illumination. The system provides a long term single machine overlay of less than 25 nm and a production throughput of 130 200-mm wafers per hour. It uses a 2 kHz 20W KrF laser for the lowest cost of operation.

Uploaded by

cfsturman
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PAS 5500/750F

DUV Step and Scan

Description
The PAS 5500/750F DUV Step-and-Scan system enables 130-nm mass production using mature
248-nm KrF technology. It combines the imaging power of the improved 0.7 NA 4x reduction
lens with the latest multi-spot innovations in the leveling system and the AERIAL II illumination
technology including QUASAR, multipole illumination and optional multiple exposure capability.
The system is equipped with both TTL alignment and ATHENA for improved alignment accuracy on
backend process layers, providing a long term single machine overlay of less than 25 nm.
Further reduction of overhead times in combination with enhancements in productivity on customer
jobs provide a production throughput of 130 200-mm wph.
The application of a 2 kHz 20W KrF laser with Variable laser Frequency Control results in the lowest
possible Cost of Operation.

Page 1 of 3
Technical Specifications
Lens
Wavelength: 248 nm
NA: 0.5–0.7 (variable)
Resolution: ≤ 130 nm
Field size, for reticle with pellicle
• Max X: 26.0 mm
• Max Y: 33.0 mm
CD Uniformity @ 0.13-µm L/SCD Uniformity @ 0.13-µm isolated lines
• BF: ≤ 10 nm
• Over 0.4-µm defocus: ≤ 15 nm
CD Uniformity @ 0.13-µm isolated lines
• BF: ≤ 10 nm
• Over 0.4-µm defocus: ≤ 25 nm
Distortion (Dynamic): ≤ 20 nm
Overlay
Single-machine: ≤ 25 nm
Matched-machine: ≤ 40 nm

AERIAL Illumination
Annular
• Intensity: ≥ 2400 mW/cm (@ NA Max)
2

• σ out: 0.35–0.88
• σ in: 0.10–0.58
• Integrated slit uniformity: ≤ 0.8%
QUASAR
•
•
•

Production Throughput
2
50-mJ/cm exposure dose
• 200-mm wafers, 46 shots: ≥ 130 wph

Lasers
Type: Cymer ELS6600, Gigaphoton KES-G2OK
Power: 20 W
Frequency: Continuously variable up to 2 kHz
Beam Delivery: ≤ 20-m remote capability

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Key Features and Benefits
Variable, 0.7 NA Deep UV Projection Lens
Production resolution down to 130 nm.
Step and Scan
Large field size, better CD control and lower lens aberrations.
AERIAL II Illumination with QUASAR and Optional Multiple Exposure Capability
Provides the ultimate flexibility in illumination modes at maximum throughput.
PAS 5500 Step-and-Scan Body
Commonality with i-line and 193-nm Step-and-Scan tools for economic mix-and-match.
8-Spot Level Sensor
Improved focus and leveling under production conditions.
ATHENA Advanced Alignment
Increased alignment accuracy process latitude.
Includes 2kHz 20W KrF Laser Technology with VariableLaser Frequency Control
The perfect combination of high laser power for high throughput and efficient use of laser pulses for
the lowest possible laser Cost of Operation.

Page 3 of 3 Copyright 2019 (ASML) All rights reserved


ASML.com > Products > Systems > PAS 5500 > PAS 5500/750F

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