SWITCH APPLICATIONS SINGLE-QUADRANT SWITCHES

• controls the electrical current and voltage

SWITCH REALIZATION
• realization of switches using transistors
and diodes
• the classification of switches depends on the
connection they make
TWO VITAL COMPONENTS OF A SWITCH
POLE – number of separate circuits which are
controlled by a switch
CONTROL METHODS
THROW – number of separate positions that the
1. PASSIVE SWITCH
switch can adopt
- does not have Control Terminal C
SPST – Single Pole Single Throw -the state is determined by current and
voltage waveforms
• controls a single circuit
Examples:
• Diodes
• Rectifier
• Applications

2. ACTIVE SWITCH
- contains Control Terminal C
- the state is not dependent on the
current and voltage

SPDT – Single Pole Double Throw Examples:

• has a single pole and two different switch • BJT - Bipolar Junction Transistor
output options • IGBT - Insulated-Gate Bipolar Transistor
TWO-QUADRANT SWITCHES FOUR-QUADRANT SWITCHES
• required for inverters and amplifiers • a basic building blocks in many power
• usually, an active switch controlled by converter circuits
terminal C • Usually an active switch controlled by
terminal C
TYPES:
• Conduct positive or negative on-state
1. CURRENT-BIDIRECTIONAL TWO- current
QUADRANT SWITCH • Block positive or negative off-state voltage
• conducts current on both polarities (on
state); blocks positive voltage (off state)
• common in motor control and some power
electronics
• type of switch that uses a transistor and
diode (two SPST switches) connected in
parallel
EXAMPLE:

• MOSFETs (Metal-
Oxide-Semiconductor
Field-Effect Transistors
• Motor Control
• Inverters

SYNCHRONOUS RECTIFIERS
2. VOLTAGE-BIDIRECTIONAL TWO-
• an electronic switch that improves power-
QUADRANT SWITCHES
conversion efficiency
• must block both positive and negative
• Replacement of a diode with a backwards-
voltages (off state); conduct positive
connected MOSFET to obtain reduced
current (on state)
conduction loss
• usually, an active switch controlled by
terminal C
• control the direction of voltage in a
circuit
EXAMPLES:
• Silicon Controlled Rectifier
• Buck Boost Inverter
• Dc-3φac buck-boost inverter
BUCK CONVERTER WITH SYNCHRONOUS I-V CHARACTERISTIC
RECTIFFIER

ON & OFF RECOVERY TIME

TYPES OF POWER DIODE

POWER DIODES
• a diode that is commonly used in power
electronics circuits
• A diode with two-terminals and conducts
current in one direction
• Varies in construction from a standard diode
to enable this higher current rating
APPLICATIONS
CONSTRUCTION
• Freewheeling
• Heavily doped 𝑃^+ and a lightly doped 𝑁^−
• Energy Feedback
which is epitaxially grown on a heavily doped
𝑁^+ substrate • AC – DC Rectification
• The drift region help the diode to block larger • DC – DC Conversion
PIV hence having a greater breakdown • DC – AC Inversion
voltage • Power Supply
• Adding this 𝑁^− layer increase the ohmic
resistance
MOSFET-BJT-IGBT ADVANTAGES OF A POWER IGBT
• It has best combination quality of BJT and
MOSFET
METAL OXIDE SEMICONDUCTOR FIELD-
• It has higher voltage and current handling
EFFECT TRANSISTOR
capabilities
• modern power semiconductor device having • It has a very high input impedance
gate lengths close to one micron • It can switch very high currents using very
• comprised of many small parallel- low voltage
connected enhancement mode MOSFET • It is voltage-controlled, It has no input
cells which cover the surface of the silicon current and low input losses
die • It has a higher power gain than both BJT
and MOSFET
BIPOLAR JUNCTION TRANSISTOR
• It has high input impedance like MOSFET
• three-terminal semiconductor device • It has a higher switching speed than BJT
• consists of two p-n junctions which are • It has low On-state resistance
able to amplify or magnify a signal • Simple and Cheap
• current controlled device
• operates in 4 regions cut-off, active, quasi
saturation, and hard saturation DISADVANTAGES OF A POWER IGBT
STRUCTURE OF A POWER BJT • It has a lower switching speed than
MOSFET
• Crosshatched regions are metallized
• It has latching problems due to the
contacts
PNPN structure resembling thyristor
• Consists of three differently doped
• It is costlier than BJT and MOSFET
Semiconductor regions: the emitter region,
• It has an asymmetric blocking
the base region and the collector region.
capacity
INSULATED GATE BIPOLAR TRANSISTOR • It cannot block high reverse voltages
• Switching Frequency is not as high
• three-terminal power semiconductor
as that of a power MOSFET
device primarily forming an electronic
switch
• developed to combine high efficiency with
DC-DC – Conversion
fast switching.
• Change and control voltage magnitude
STRUCTURE OF A POWER IGBT AC-DC – Rectification
• Crosshatched regions are metallized • Control DC voltage or AC current
contacts.
• Shaded regions are insulating silicon DC-AC – Inversion
dioxide layers • Produce sinusoid of controllable magnitude
and frequency
AC-AC – Cycloconversion
• Change and control voltage magnitude and
frequency
BASIC EQUATION OF A DC-DC
CONVERTER
Pout = Pin
VI = VgIg
M(D) = V/Vg
V = Vg[M(D)]
Vg[M(D)]I = VgIg
Ig = I[M(D)] – ideal conversion ratio

QUIZ
1. Construction of a power diode
• P+ = Heavily Doped, N- = Lightly Doped
2. Formula for voltage input
• Vg = V/M(D)
3. Bidirectional operates
• I and II
4. Current bidirectional
• I and IV
5. Diodes can be used in very high frequencies,
also used in switching power supply and
instrumentation
• Schottky
6. Diodes can be used in high frequencies, also
used in SMPS, commutation circuits,
choppers, and induction heating.
• Fast Recovery
7. efficiency of an ideal transformer
• 100%
8. The drift region is not present at which
region?
• Signal Diode
9. Process used in changing and controlling
voltage magnitude only
• DC-DC conversion
10. Process used in controlling dc voltage, ac
current
• AC – DC Rectification