LM13700
LM13700
1FEATURES DESCRIPTION
•
2 gm Adjustable over 6 Decades The LM13700 series consists of two current
controlled transconductance amplifiers, each with
• Excellent gm Linearity differential inputs and a push-pull output. The two
• Excellent Matching between Amplifiers amplifiers share common supplies but otherwise
• Linearizing Diodes operate independently. Linearizing diodes are
provided at the inputs to reduce distortion and allow
• High Impedance Buffers
higher input levels. The result is a 10 dB signal-to-
• High Output Signal-to-Noise Ratio noise improvement referenced to 0.5 percent THD.
High impedance buffers are provided which are
APPLICATIONS especially designed to complement the dynamic
range of the amplifiers. The output buffers of the
• Current-Controlled Amplifiers
LM13700 differ from those of the LM13600 in that
• Current-Controlled Impedances their input bias currents (and hence their output DC
• Current-Controlled Filters levels) are independent of IABC. This may result in
• Current-Controlled Oscillators performance superior to that of the LM13600 in audio
applications.
• Multiplexers
• Timers
• Sample-and-Hold circuits
Connection Diagram
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM13700
SNOSBW2E – NOVEMBER 1999 – REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)
Absolute Maximum Ratings
Supply Voltage
LM13700 36 VDC or ±18V
(2)
Power Dissipation TA = 25°C
LM13700N 570 mW
Differential Input Voltage ±5V
Diode Bias Current (ID) 2 mA
Amplifier Bias Current (IABC) 2 mA
Output Short Circuit Duration Continuous
(3)
Buffer Output Current 20 mA
Operating Temperature Range
LM13700N 0°C to +70°C
DC Input Voltage +VS to −VS
Storage Temperature Range −65°C to +150°C
Soldering Information
PDIP Package
Soldering (10 sec.) 260°C
SOIC Package
Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) For operation at ambient temperatures above 25°C, the device must be derated based on a 150°C maximum junction temperature and a
thermal resistance, junction to ambient, as follows: LM13700N, 90°C/W; LM13700M, 110°C/W.
(3) Buffer output current should be limited so as to not exceed package dissipation.
(1)
Electrical Characteristics
LM13700
Parameter Test Conditions Units
Min Typ Max
Input Offset Voltage (VOS) Over Specified Temperature Range 0.4 4
mV
IABC = 5 μA 0.3 4
VOS Including Diodes Diode Bias Current (ID) = 500 μA 0.5 5 mV
Input Offset Change 5 μA ≤ IABC ≤ 500 μA 0.1 3 mV
Input Offset Current 0.1 0.6 μA
Input Bias Current Over Specified Temperature Range 0.4 5 μA
1 8
Forward Transconductance (gm) 6700 9600 13000 μmho
Over Specified Temperature Range 5400
gm Tracking 0.3 dB
Peak Output Current RL = 0, IABC = 5 μA 5 μA
RL = 0, IABC = 500 μA 350 500 650
RL = 0, Over Specified Temp Range 300
Peak Output Voltage
Positive RL = ∞, 5 μA ≤ IABC ≤ 500 μA +12 +14.2 V
Negative RL = ∞, 5 μA ≤ IABC ≤ 500 μA −12 −14.4 V
Supply Current IABC = 500 μA, Both Channels 2.6 mA
VOS Sensitivity
Positive ΔVOS/ΔV+ 20 150 μV/V
Negative ΔVOS/ΔV− 20 150 μV/V
CMRR 80 110 dB
Common Mode Range ±12 ±13.5 V
(2)
Crosstalk Referred to Input
100 dB
20 Hz < f < 20 kHz
Differential Input Current IABC = 0, Input = ±4V 0.02 100 nA
Leakage Current IABC = 0 (Refer to Test Circuit) 0.2 100 nA
Input Resistance 10 26 kΩ
Open Loop Bandwidth 2 MHz
Slew Rate Unity Gain Compensated 50 V/μs
(2)
Buffer Input Current 0.5 2 μA
(2)
Peak Buffer Output Voltage 10 V
(1) These specifications apply for VS = ±15V, TA = 25°C, amplifier bias current (IABC) = 500 μA, pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
(2) These specifications apply for VS = ±15V, IABC = 500 μA, ROUT = 5 kΩ connected from the buffer output to −VS and the input of the
buffer is connected to the transconductance amplifier output.
Schematic Diagram
Typical Application
Figure 4. Figure 5.
Figure 6. Figure 7.
Figure 8. Figure 9.
Output Noise
vs.
Frequency
Figure 18.
Figure 20. Leakage Current Test Circuit Figure 21. Differential Input Current Test Circuit
Circuit Description
The differential transistor pair Q4 and Q5 form a transconductance stage in that the ratio of their collector currents
is defined by the differential input voltage according to the transfer function:
(1)
where VIN is the differential input voltage, kT/q is approximately 26 mV at 25°C and I5 and I4 are the collector
currents of transistors Q5 and Q4 respectively. With the exception of Q12 and Q13, all transistors and diodes are
identical in size. Transistors Q1 and Q2 with Diode D1 form a current mirror which forces the sum of currents I4
and I5 to equal IABC:
I4 + I5 = IABC (2)
where IABC is the amplifier bias current applied to the gain pin.
For small differential input voltages the ratio of I4 and I5 approaches unity and the Taylor series of the In function
can be approximated as:
(3)
(4)
Collector currents I4 and I5 are not very useful by themselves and it is necessary to subtract one current from the
other. The remaining transistors and diodes form three current mirrors that produce an output current equal to I5
minus I4 thus:
(5)
The term in brackets is then the transconductance of the amplifier and is proportional to IABC.
Linearizing Diodes
For differential voltages greater than a few millivolts, Equation 3 becomes less valid and the transconductance
becomes increasingly nonlinear. Figure 22 demonstrates how the internal diodes can linearize the transfer
function of the amplifier. For convenience assume the diodes are biased with current sources and the input
signal is in the form of current IS. Since the sum of I4 and I5 is IABC and the difference is IOUT, currents I4 and I5
can be written as follows:
(6)
Since the diodes and the input transistors have identical geometries and are subject to similar voltages and
temperatures, the following is true:
(7)
Notice that in deriving Equation 7 no approximations have been made and there are no temperature-dependent
terms. The limitations are that the signal current not exceed ID/2 and that the diodes be biased with currents. In
practice, replacing the current sources with resistors will generate insignificant errors.
APPLICATIONS
For optimum signal-to-noise performance, IABC should be as large as possible as shown by the Output Voltage
vs. Amplifier Bias Current graph. Larger amplitudes of input signal also improve the S/N ratio. The linearizing
diodes help here by allowing larger input signals for the same output distortion as shown by the Distortion vs.
Differential Input Voltage graph. S/N may be optimized by adjusting the magnitude of the input signal via RIN
(Figure 23) until the output distortion is below some desired level. The output voltage swing can then be set at
any level by selecting RL.
Although the noise contribution of the linearizing diodes is negligible relative to the contribution of the amplifier's
internal transistors, ID should be as large as possible. This minimizes the dynamic junction resistance of the
diodes (re) and maximizes their linearizing action when balanced against RIN. A value of 1 mA is recommended
for ID unless the specific application demands otherwise.
(8)
If VC is derived from a second signal source then the circuit becomes an amplitude modulator or two-quadrant
multiplier as shown in Figure 26, where:
(9)
The constant term in the above equation may be cancelled by feeding IS × IDRC/2(V− + 1.4V) into IO. The circuit
of Figure 27 adds RM to provide this current, resulting in a four-quadrant multiplier where RC is trimmed such that
VO = 0V for VIN2 = 0V. RM also serves as the load resistor for IO.
Noting that the gain of the LM13700 amplifier of Figure 24 may be controlled by varying the linearizing diode
current ID as well as by varying IABC, Figure 28 shows an AGC Amplifier using this approach. As VO reaches a
high enough amplitude (3VBE) to turn on the Darlington transistors and the linearizing diodes, the increase in ID
reduces the amplifier gain so as to hold VO at that level.
(10)
where gm ≈ 19.2IABC at 25°C. Note that the attenuation of VO by R and RA is necessary to maintain VIN within the
linear range of the LM13700 input.
Figure 30 shows a similar VCR where the linearizing diodes are added, essentially improving the noise
performance of the resistor. A floating VCR is shown in Figure 31, where each “end” of the “resistor” may be at
any voltage within the output voltage range of the LM13700.
Figure 39 shows how to build a VCO using one amplifier when the other amplifier is needed for another function.
Additional Applications
Figure 40 presents an interesting one-shot which draws no power supply current until it is triggered. A positive-
going trigger pulse of at least 2V amplitude turns on the amplifier through RB and pulls the non-inverting input
high. The amplifier regenerates and latches its output high until capacitor C charges to the voltage level on the
non-inverting input. The output then switches low, turning off the amplifier and discharging the capacitor. The
capacitor discharge rate is speeded up by shorting the diode bias pin to the inverting input so that an additional
discharge current flows through DI when the amplifier output switches low. A special feature of this timer is that
the other amplifier, when biased from VO, can perform another function and draw zero stand-by power as well.
The operation of the multiplexer of Figure 41 is very straightforward. When A1 is turned on it holds VO equal to
VIN1 and when A2 is supplied with bias current then it controls VO. CC and RC serve to stabilize the unity-gain
configuration of amplifiers A1 and A2. The maximum clock rate is limited to about 200 kHz by the LM13700 slew
rate into 150 pF when the (VIN1–VIN2) differential is at its maximum allowable value of 5V.
The Phase-Locked Loop of Figure 42 uses the four-quadrant multiplier of Figure 27 and the VCO of Figure 39 to
produce a PLL with a ±5% hold-in range and an input sensitivity of about 300 mV.
The Schmitt Trigger of Figure 43 uses the amplifier output current into R to set the hysteresis of the comparator;
thus VH = 2 × R × IB. Varying IB will produce a Schmitt Trigger with variable hysteresis.
The Ramp-and-Hold of Figure 47 sources IB into capacitor C whenever the input to A1 is brought high, giving a
ramp-rate of about 1V/ms for the component values shown.
The true-RMS converter of Figure 48 is essentially an automatic gain control amplifier which adjusts its gain such
that the AC power at the output of amplifier A1 is constant. The output power of amplifier A1 is monitored by
squaring amplifier A2 and the average compared to a reference voltage with amplifier A3. The output of A3
provides bias current to the diodes of A1 to attenuate the input signal. Because the output power of A1 is held
constant, the RMS value is constant and the attenuation is directly proportional to the RMS value of the input
voltage. The attenuation is also proportional to the diode bias current. Amplifier A4 adjusts the ratio of currents
through the diodes to be equal and therefore the voltage at the output of A4 is proportional to the RMS value of
the input voltage. The calibration potentiometer is set such that VO reads directly in RMS volts.
The circuit of Figure 49 is a voltage reference of variable Temperature Coefficient. The 100 kΩ potentiometer
adjusts the output voltage which has a positive TC above 1.2V, zero TC at about 1.2V, and negative TC below
1.2V. This is accomplished by balancing the TC of the A2 transfer function against the complementary TC of D1.
The wide dynamic range of the LM13700 allows easy control of the output pulse width in the Pulse Width
Modulator of Figure 50.
For generating IABC over a range of 4 to 6 decades of current, the system of Figure 51 provides a logarithmic
current out for a linear voltage in.
Since the closed-loop configuration ensures that the input to A2 is held equal to 0V, the output current of A1 is
equal to I3 = −VC/RC.
The differential voltage between Q1 and Q2 is attenuated by the R1,R2 network so that A1 may be assumed to
be operating within its linear range. From Equation 5, the input voltage to A1 is:
(11)
The voltage on the base of Q1 is then
(12)
The ratio of the Q1 and Q2 collector currents is defined by:
(13)
Combining and solving for IABC yields:
(14)
This logarithmic current can be used to bias the circuit of Figure 25 to provide temperature independent stereo
attenuation characteristic.
REVISION HISTORY
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PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
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PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
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(3)
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(4)
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(5)
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PACKAGE OPTION ADDENDUM
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(6)
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PACKAGE MATERIALS INFORMATION
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PACKAGE MATERIALS INFORMATION
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MECHANICAL DATA
N0016E
NFG0016E
N16E (Rev G)
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