MOSFET MODULE Dual 85A 450V/500V PD10M441H / PD10M440H
OUTLINE DRAWING
FEATURES Dimension(mm)
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by 108.0
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
Circuit
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Approximate Weight : 220g
MAXMUM RATINGS
Ratings Symbol PD10M441H PD10M440H Unit
Drain-Source Voltage (VGS=0V) VDSS 450 500 V
Gate - Source Voltage VGSS +/ - 20 V
Duty=50% 85 (Tc=25°C)
Continuous Drain Current ID A
D.C. 60 (Tc=25°C)
Pulsed Drain Current IDM 170 Tc=25°C) A
Total Power Dissipation PD 730 Tc=25°C) W
Operating Junction Temperature Range Tjw -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminals to Base AC, 1 min.) VISO 2000 V
Module Base to Heatsink 3.0
Mounting Torque FTOR N•m
Bus Bar to Main Terminals 2.0
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
VDS=VDSS,VGS=0V - - 1.0
Zero Gate Voltage Drain Current IDSS mA
Tj=125°C, VDS=VDSS,VGS=0V - - 4.0
Gate-Source Threshold Voltage VGS(th) VDS=VGS, ID=1mA 2.0 3.1 4.0 V
Gate-Source Leakage Current IGSS VGS=+/- 20V,VDS=0V - - 1.0 µA
Static Drain-Source On-Resistance rDS(on) VGS=10V, ID=40A - 75 85 m-ohm
Drain-Source On-Voltage VDS(on) VGS=10V, ID=40A - 3.5 3.9 V
Forward Transconductance gfs VDS=15V, ID=40A - 65 - S
Input Capacitance Cies - 13 - nF
Output Capacitance Coss VDS=25V,VGS=0V,f=1MHz - 2.2 - nF
Reverse Transfer Capacitance Crss - 0.45 - nF
Turn-On Delay Time td(on) VDD= 1/2VDSS - 140 -
Rise Time tr ID=40A - 110 -
VGS= -5V, +10V ns
Turn-Off Delay Time td(off) - 300 -
Fall Time tf RG= 7ohm - 50 -
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Continuous Source Current IS D.C. - - 60 A
Pulsed Source Current ISM - - - 170 A
Diode Forward Voltage VSD IS=85A - - 2.0 V
Reverse Recovery Time trr - 100 - ns
IS=85A, -dis/dt=100A/µs
Reverse Recovery Qr - 0.15 - µC
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
MOS FET - - 0.171
Thermal Resistance, Junction to Case Rth(j-c)
Diode - - 1.2 °C/W
Thermal Resistance, Case to Heatsink Rth(c-f) Mounting surface flat, smooth, and greased - - 0.1
PD10M44xH
108.0
Fig. 1 Typical Output Characteristics Fig. 2 Typical Drain-Source On-Voltage Fig. 3 Typical Drain-Source On Voltage
Fig. 2 Vs. Gate-Source Voltage Fig. 3 Vs. Junction Temperature
TC=25℃ 250μs Pulse Test TC=25℃ 250μs Pulse Test VGS=10V 250μs Pulse Test
120 12 24
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
DRAIN TO SOURCE ON VOLTAGE VDS (on)(V)
10V
100 10 20
6V
ID=85A
DRAIN CURRENT ID (A)
ID=85A
80 8 16
60 6 12
40 4 40A 8
VGS=5V 40A
20 2 20A 4 20A
0 4V 0 0
0 2 4 6 8 10 12 0 4 8 12 16 -40 0 40 80 120 160
DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V) JUNCTION TEMPERATURE Tj ( ℃)
Fig. 4 Typical Capacitance Fig. 5 Typical Gate Charge Fig. 6 Typical Switching Time
Fig. 4 Vs. Drain-Source Voltage Fig. 5 Vs. Gate-Source Voltage Fig. 6 Vs. Series Gate impedance
VGS=0V f=1kHz ID=50A ID=40A VDD=250V TC=25℃ 80μs Pulse Test
30 16 10
VDD= 100V
250V
400V
5
GATE TO SOURCE VOLTAGE VGS (V)
24
12
SWITCHING TIME t (μs)
CAPACITANCE C (nF)
2
18 Ciss
8 1
12 toff
0.5
4 ton
6 Coss
0.2
Crss
0 0 0.1
1 2 5 10 20 50 100 0 100 200 300 400 500 600 2 5 10 20 50 100 200
DRAIN TO SOURCE VOLTAGE VDS (V) TOTAL GATE CHRAGE Qg (nC) SERIES GATE IMPEDANCE RG (Ω )
Fig. 7 Typical Switching Time Fig. 8 Typical Source-Drain Diode Forward Fig. 9 Typical Reverse Recovery Characteristics
Fig. 7 Vs. Drain Current Fig. 8 Characteristics
RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test 250μs Pulse Test IS=85A IS=40A Tj=150℃
1000 180 500
500 150
REVERSE RECOVERY TIME trr (ns)
td(off) 200
trr
SOURCE CURRENT IS (A)
SWITCHING TIME t (ns)
REVERSE CURRENT IR (A)
200 120 100
td(on)
100 90 50
tr Tj=125℃ Tj=25℃
IR
tf
50 60
20
20 30 10
10 0 5
2 5 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.0 2.4 0 100 200 300 400 500 600
DRAIN CURRENT ID (A) SOURCE TO DRAIN VOLTAGE VSD (V) -dis/dt (A/μs)
Fig. 10 Maximum Safe Operating Area Fig. 11-1 2
NORMALIZED TRANSIENT
Normalized Transient Thermal
10 0
THERMAL IMPEDANCE
impedance(MOSFET)
TC=25℃ Tj=150℃MAX Single Pulse
500 5
Operation in this area
is limited by RDS (on) 2
200
10 -1
[rth(j-c) / Rth(j-c)]
100 10μs 5 Per Unit Base
Rth(j-c)=0.171℃/W
DRAIN CURRENT ID (A)
50 2 1 Shot Pulse
100μs 10 -2 -5
10 10 -4 10 -3 10 -2 10 -1 10 0 10 1
20 PULSE DURATION t (s)
10 Fig. 11-2 2
1ms
NORMALIZED TRANSIENT
Normalized Transient Thermal
5 10 0
THERMAL IMPEDANCE
impedance(DIODE)
10ms 5
2
2
DC
10 -1
[rth(j-c) / Rth(j-c)]
1
−441H −440H 5 Per Unit Base
0.5 Rth(j-c)=1.2℃/W
1 2 5 10 20 50 100 200 500 1000
2 1 Shot Pulse
DRAIN TO SOURCE VOLTAGE VDS (V)
10 -2 -5
10 10 -4 10 -3 10 -2 10 -1 10 0 10 1
PULSE DURATION t (s)
