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Davydov Splitting and Excitonic Resonance

Effects in Raman Spectra of Few-Layer MoSe2
Kangwon Kim,† Jae-Ung Lee,† Dahyun Nam, and Hyeonsik Cheong*
Department of Physics, Sogang University, Seoul 04107, Korea
*
S Supporting Information

ABSTRACT: Raman spectra of few-layer MoSe2 were

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measured with eight excitation energies. New peaks that

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appear only near resonance with various exciton states are

analyzed, and the modes are assigned. The resonance
profiles of the Raman peaks reflect the joint density of
states for optical transitions, but the symmetry of the exciton
wave functions leads to selective enhancement of the A1g
mode at the A exciton energy and the shear mode at the C
exciton energy. We also find Davydov splitting of intralayer
A1g, E1g, and A2u modes due to interlayer interaction for
some excitation energies near resonances. Furthermore, by
fitting the spectral positions of interlayer shear and breathing modes and Davydov splitting of intralayer modes to a linear
chain model, we extract the strength of the interlayer interaction. We find that the second-nearest-neighbor interlayer
interaction amounts to about 30% of the nearest-neighbor interaction for both in-plane and out-of-plane vibrations.
KEYWORDS: MoSe2, molybdenum diselenide, Raman spectroscopy, Davydov splitting, excitonic resonance

F ew-layer semiconducting transition metal dichalcoge-

nides (TMDs) are studied intensively owing to band-gap
energies in the range of near-infrared to visible
wavelengths, which make them suitable for various electronic
and optoelectronic applications.1,2 Monolayer MoSe2 shows a
important probe to investigate interactions between each
system. In TMDs, the weak interlayer interaction causes
splitting of the intralayer vibration modes. Since this splitting
is directly related to the interlayer interaction, the strength of
luminescence peak at ∼1.6 eV, which is suitable for applications the interlayer interaction can be estimated by carefully
in deep red or near-infrared regions of the spectrum. MoSe2 is analyzing the splitting. Furthermore, since the number of split
also used in TMD heterostructures such as WSe2/MoSe23,4 or peaks and their relative intensities explicitly correlate with the
MoS2/MoSe2,5,6 which exhibit interesting physical properties number of layers, Davydov splitting can be used as a fingerprint
due to unique band alignment between these atomically thin
for the number of layers. As we will present in this paper,
semiconductors. Raman spectroscopy is a powerful tool to
characterize two-dimensional materials such as graphene or Davydov splitting appears in the spectrum only for some
TMDs. For TMD materials, Raman spectroscopy is used to excitation wavelengths, which again is related to the excitonic
characterize the number of layers,7−9 stacking order,10−12 resonances. Therefore, in order to utilize Raman spectroscopy
strain,13,14 or doping density.15 However, it has been reported for characterization of TMDs, establishing the excitation energy
that the Raman spectrum of a TMD material varies greatly dependence of the Raman spectrum for each material is an
depending on the excitation laser used, which is attributed to
excitonic resonance effects.16−19 Because of reduced dielectric important first step. Here we present Raman spectroscopy on
screening in two-dimensional materials, the excitons in TMDs few-layer MoSe2 using eight different excitation energies and
are known to have very large binding energies,20−24 and thus report on resonance effects on the Raman spectra and Davydov
tightly localized wave functions. Resonance with such exciton splitting of the intralayer Raman modes. We extract the
states greatly modifies the Raman scattering process to result in strength of the interlayer interaction by fitting the spectral
extraordinary resonance Raman effects. In the Raman spectra of
positions of interlayer shear and breathing modes and Davydov
MoTe2 and WS2, Davydov splitting of some of the main Raman
peaks has been reported.25−27 Davydov splitting, also known as splitting of intralayer modes.
factor-group splitting, is the splitting of bands in the electronic
or vibrational spectra of crystals due to the presence of more Received: July 6, 2016
than one equivalent entity in the unit cell.28,29 Since this is due Accepted: August 1, 2016
to breaking of degeneracy by interactions of each entity, it is an Published: August 1, 2016

© 2016 American Chemical Society 8113 DOI: 10.1021/acsnano.6b04471

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Figure 1. Crystal structure of MoSe2. Raman spectra of (b) low-frequency and (c) main modes measured with the excitation energy of 2.41 eV
(514.5 nm). Peak positions of (d) shear and breathing and (e) E2g1 and A1g modes.

RESULTS AND DISCUSSION Mode Assignments for Resonance Raman Spectra.

Raman Spectra of MoSe2. The crystal structure of 2H- For further investigation, we repeated the Raman measure-
MoSe2 is schematically shown in Figure 1a. Although there are ments with eight excitation energies, as shown in Figure 2. The
two polytypes of MoSe2, the samples presented in this work Raman spectra show dramatic changes as a function of the
were all 2H polytypes based on the low-frequency Raman excitation energy, which suggests a complicated excitonic
spectrum.10,11 Single-layer MoSe2 is composed of two Se layers resonance behavior. The complete set of Raman spectra for
and one Mo layer with hexagonal structures to form a trilayer all thicknesses is compiled in the Supporting Information
(TL). As shown in the side view, the adjacent layers are rotated (Figures S1−7). For 1TL, the Raman peaks are not resolved for
by 180° in the 2H polytype. Each TL is connected to the 1.58 eV excitation because the spectrum is overwhelmed by the
neighboring TLs by weak van der Waals interactions. The excitonic luminescence. In the low-frequency region, no peaks
Raman spectra of few-layer MoSe2 measured with the excitation are observed for 1TL-MoSe2, whereas shear and breathing
energy of 2.41 eV (514.5 nm) are shown in Figure 1b and c. modes are observed for few-TL samples. The Raman intensities
The peak marked by * at −14 cm−1 is due to a plasma line of of shear and breathing modes are strongly dependent on the
the laser. In the low-frequency range, breathing and shear excitation energies. For the excitation energy of 1.58 eV, low-
modes, which correspond to rigid out-of-plane and in-plane frequency modes are too weak to be resolved except for thicker
vibrations of the TLs, respectively, are observed. The shear samples (6−8TL). For other excitation energies, the shear
modes are indicated by red circles, and the breathing modes by modes are clearly resolved, but the breathing modes appear
black diamonds. These modes are unambiguous fingerprints of strong only for 2.71 and 2.81 eV excitation energies.
the number of layers and stacking orders of layered In the higher frequency region, several peaks appear or
materials.8−12 The measured samples all belong to the 2H disappear depending on the excitation energy. For example, a
polytype,10,11 and the positions of the low-frequency modes are peak at ∼291 cm−1 near the E2g1 mode is observed for
summarized in Figure 1d. The main A1g and E2g1 peaks are excitation energies of 1.58 and 1.96 eV. This peak cannot be
shown in Figure 1c, and the peak positions are summarized in due to Davydov splitting because it is observed even in 1TL.
Figure 1e. It should be noted that the notations of the modes This peak was observed before and was interpreted as being
depend on the number of TLs, 8,9,25,30 and we use due to the splitting of LO and TO phonons of the E2g1
corresponding bulk notations for simplicity unless noted mode.18,35 The split TO and LO phonons should have
otherwise. The A1g mode blue-shifts as the number of TLs polarization dependences similar to those of split E modes
increases, whereas the E2g1 mode red-shifts with the number of under uniaxial strain: the polarization dependence of the two
TLs, which is similar to the case of MoS2.7 This red-shift of the phonons should have anticorrelation.14,36 In Figure S8, we
E2g1 mode in TMD materials has been attributed to the compare two spectra of 3TL MoSe2 measured with the 1.96 eV
dielectric screening of the long-range Coulomb interaction and excitation in parallel and cross-polarizations. The E2g1 mode is
the surface effects.31,32 For samples thicker than 2TL, additional clearly observed in both polarizations, whereas the peak at
peaks appear on the low-frequency side of the A1g peak. These ∼291 cm−1 is observed only for the parallel polarization. This
peaks are attributed to Davydov splitting33,34 of the A1g mode. implies that the E2g1 mode peak and the peak at ∼291 cm−1 are
Detailed analyses of these modes will be presented below. not TO−LO pairs. We note that the frequency of this peak is
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Figure 2. Raman spectra of (a) 1TL, (b) 2TL, and (c) 3TL MoSe2 with eight excitation energies indicated. Detailed line shapes of the A1g
mode are shown on the right.

close to the sum of the frequencies of the TA and E1g branch spectrum. The A2″ mode corresponding to the A2u mode is
near the M point of the Brillouin zone.35 Since 1.58 eV Raman inactive, but a small signal can be observed for the
excitation is resonant with the A exciton state, two-phonon excitation energies of 2.71 and 2.81 eV, probably owing to the
scattering can be enhanced selectively for phonons with specific resonance effect. It is not clear why the E″ mode is completely
momenta. Similar resonance effects have also been observed in invisible even at resonant excitations. For 2TL or thicker
resonant Raman scattering in MoS2.16,37−39 MoSe2, both the E1g and A2u modes have Davydov splitting, and
In bulk MoSe2, the E1g mode at ∼169 cm−1 is forbidden in some of the split modes are Raman active,25 which may explain
backscattering and the A2u mode at ∼353 cm−1 is Raman why these peaks are relatively strong for thicker MoSe2. A close
inactive, but they appear for some excitation energies due to inspection reveals that the Davydov split peaks indeed can be
resonance effects.40 When the excitation energy is close to the resolved in some cases (see Supporting Information Figures S9
exciton energy, the strongly localized exciton wave function and S10). The broad peaks labeled “a” and “d” are strongly
effectively breaks the symmetry of the system, which in turn enhanced for 1.58 eV excitation. Peak “a” is assigned as a
activates some modes that are normally forbidden. For 1TL- combination of the E2g1 and LA modes at the M point, and
MoSe2, the E″ mode corresponding to the bulk E1g mode is also peak “d” is assigned as the E1g + LA or 2B2g mode at the M
forbidden in backscattering and cannot be observed in the point.40 These second-order Raman peaks are enhanced due to
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Figure 3. (a) Normalized Raman spectra near the A1g mode showing Davydov splitting in 1TL- to 6TL-MoSe2 for various excitation energies.
(b) Schematics of out-of-plane vibrational modes for 2TL to 4TL. (c) Peak positions of split Raman modes.

resonance with the A exciton state, as in the case of have an identical configuration within each TL in which the Se
MoS2.16,37−39 The feature labeled “b” is observed only at atoms vibrate symmetrically with respect to the Mo atom,
specific excitation energies of 2.41−2.81 eV. In bulk MoSe2, the which is stationary. The relative phases between the layers are
B1u mode, which is the Davydov pair of the A1g mode, appears different. If a vibration mode has an inversion center (for even
at this position. For few-layer MoSe2, this feature corresponds number of TLs) or a mirror symmetry plane (for odd number
to the Davydov splitting of the A1g mode and depends of TLs), it is Raman active, and IR active otherwise. In 2TL-
sensitively on the number of layers. A detailed analysis of this MoSe2, there are a Raman active mode (A1g) in which the two
feature is presented below. The peak labeled “c” is observed for layers vibrate in phase and an infrared active mode (A2u) in
all thicknesses, and its intensity more or less correlates with that which the layers vibrate out of phase. Therefore, normally only
of the A1g mode. This mode was previously assigned to the one A1g peak is observed for 2TL-MoSe2. The small signal on
second-order 2E2g2 mode at the M point,40 but the fact that this the lower-frequency side of the A1g peak for the 1.58 eV
mode is observed even for 1TL-MoSe2 precludes this possibility excitation is ascribed to the out-of-phase A2u mode, which
because the E2g2 mode does not exist in 1TL. Another becomes partially active due to the resonance effect. For 3TL,
possibility is the combination of TA(M) and LA(M) modes as the two A1′ modes are Raman active, and the A2″ mode is
suggested in ref 18. infrared active. Of the two A1′ modes, all the layers vibrate in
Davydov Splitting. Now, we focus on the feature “b” that phase for the A1′(1) mode, whereas one layer is out of phase
is related to the splitting of the A1g vibration mode near 240 for the A1′(2) mode. Because the (nonresonant) Raman
cm−1. Figure 3a shows the details of the spectra in this scattering cross section is proportional to the derivative of the
frequency range for 1−6TL MoSe2 (see Supporting Informa- susceptibility tensor with respect to displacement, the
tion for data for 7TL and 8TL in Figure S11). Multiple contributions of out-of-phase vibrations would tend to cancel
Lorentzian fits are also shown. The spectra are normalized by each other. Hence the A1′(1) mode is observed for all
the intensity of the highest frequency peak. For 1TL and 2TL excitation energies, whereas the A1′(2) mode appears only for
MoSe2, the spectra can be fitted with a single Lorentzian some excitation energies near resonances. Similarly for 4TL, of
function except for the one for 2TL measured with the 1.58 eV the two Raman-active A1g modes, the all-in-phase A1g(1) mode
excitation. Two peaks are resolved for 3TL and 4TL, and three is always observed at the higher frequency. For 3TL and 4TL,
peaks for 5TL and 6TL. These are direct consequences of the infrared active modes are not resolved even for resonant
Davydov splitting, which reflects the interlayer interaction in excitations, probably because they are overwhelmed by
layered materials. Figure 3b illustrates the out-of-plane vibration relatively stronger Raman-active modes with similar frequen-
modes in 2TL, 3TL, and 4TL MoSe2. The vibration modes cies. For any number of TLs, there are N + 1 and N/2 Raman-
2
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active modes for odd-number layers and even-number layers, distinguishable from the C exciton state in the optical spectrum.
respectively.9,27 Davydov splitting also affects the in-plane E The resonance profiles of the Raman peaks can be understood
modes.25 However, the splitting is much smaller in MoSe2. in relation to these states.18 The A1g/A1′(1) mode shows an
Upon close inspection of the spectra, a small splitting of the E1g enhancement near the resonance with the A exciton state. Since
mode can be extracted from its asymmetric line shape (see the A exciton state is formed mostly from the dz2 orbital of Mo
Supporting Information Figure S10). No such splitting is atoms,17,45 it is strongly modulated by out-of-plane A1g/A1′(1)
resolved for the E2g1 mode. vibrations because the excitons are strongly bound with a large
The observed peak positions are summarized in Figure 3c. exciton binding energy. There is another resonance near ∼2.7
The peak positions can be estimated using the linear chain eV for 1TL, which red-shifts for thicker layers. This resonance
model,25,32 which is schematically described in Figure S12 (see can be associated with the C absorption peak. Peak “d”, which
Supporting Information for details of the linear chain model we assigned to E1g + LA or 2B2g, has a similar resonance
calculations). By considering the second-nearest-neighbor behavior (see Figure S14 for the resonance profile of peak “c”).
interactions and the surface effects,25,32 we obtained the spring
This is reasonable because such two-phonon scattering tends to
constants by fitting the experimentally obtained peak positions
be strongly enhanced only for excitation energies near strongly
of the Raman modes (shear, breathing, E2g1, A1g, E1g, and A2u)
bound exciton states.16 The other main peak, E2g1, has a very
and the Davydov splitting of the A1g, E1g, and A2u modes to
calculated vibrational frequencies. The in-plane vibrations and different resonance behavior. There is no enhancement near
the out-of-plane vibrations are fitted separately. The results of the A exciton state at ∼1.6 eV, which can be explained in terms
the fitting are shown in Figure S13. The thickness dependence of the atomic orbitals comprising the A exciton state (dz2 orbital
of the shear and breathing modes can be modeled by of Mo) that does not couple strongly with in-plane vibrations of
considering only the nearest-neighbor interlayer interaction β, the E2g1 mode.17 The enhancement near the C absorption peak
the interaction between S atoms in adjacent TLs.8,9 However, for 1TL is not as pronounced as in the case of A1g. For thicker
the Davydov splitting cannot be fitted without considering the layers, the enhancement is very weak. On the other hand, this
second-nearest-neighbor interaction γ, the interaction between peak becomes stronger at the highest excitation energy of 3.82
Mo atoms and S atoms in adjacent TLs. The obtained eV. This is the only peak that has the highest intensity at this
parameters are summarized in Table 1. The parameters for the excitation energy. Further studies are needed to elucidate the
origin of this enhancement.
Table 1. Force Constants per Unit Area Obtained by Fitting The E1g and A2u modes show similar resonance behaviors. As
Experimental Data to Linear Chain Model explained earlier, these modes become allowed for 2TL or
thicker layers due to Davydov splitting. The resonance profiles
corresponding interaction out-of-plane in-plane
of these peaks are similar to the reported absorption spectrum
α (1019 intralayer Mo−Se 229 ± 1 152 ± 1 of MoSe2,41,42,46 which indicates that the resonance behaviors
N/m3)
αe (1019 intralayer Mo−Se for 235 ± 1 155 ± 1 of these peaks are dominated by the joint density of states for
N/m3) surface Se optical transitions. The A1g/A1′(2) mode due to Davydov
β (1019 interlayer Se−Se 5.47 ± 0.2 1.82 ± 0.4 splitting has a similar resonance profile to the E1g and A2u
N/m3) modes. [See Figure S14 for the resonance profile of A1g/
γ (1019 interlayer Mo−Se 1.63 ± 0.05 0.55 ± 0.1 A1′(3).] The resonance profiles of these peaks have a double-
N/m3)
δ (1019 intralayer Se−Se 2.53 ± 0.04 −6.80 ± 0.5 peak shape, with the spacing between the two maxima being
N/m3) ∼0.3 eV, which is similar to the spin−orbit splitting of the
δe (1019 intralayer Se−Se for surface 2.53 ± 0.04 −6.70 ± 0.5 valence band maximum at the K point.41,42 On the basis of this
N/m3) Se observation, we interpret the resonance profiles of E1g, A2u, and
A1g/A1′(2) modes in the following way: the lower energy
in-plane vibrations have larger error bars because of the small resonance peak at ∼2.4 eV corresponds to the C exciton energy
Davydov splitting for these modes. The second-nearest- or the band-to-band transition between the valence band and
neighbor interlayer interaction is not negligible, as γ is about the conduction band near the K point, and the higher energy
30% of the nearest-neighbor interaction term β for both in- resonance peak corresponds to the transition between the
plane and out-of-plane vibrations. The surface effect considers spin−orbit split-off band to the conduction band.
the fact that the S atoms on the surface experience slightly
Both shear and breathing modes have maximum intensity for
different force constants and needs to be included to explain
the 2.81 eV excitation, which was the highest excitation energy
the red-shift of the E2g1 and A2u modes with increasing
available for low-frequency measurements. There is no data for
thickness.32
Intensity Resonance Profiles of Raman Modes. The the 2.54 or 3.82 eV excitation, as we did not have appropriate
Raman intensities as a function of the excitation energy for filters for those laser lines. The shear mode shows resonance
several peaks are shown in Figure 4. Each peak shows a distinct near 2.4 eV, which is similar to other peaks such as the A1g/
resonance behavior, which implies different exciton−phonon A1′(2) mode. The breathing modes are almost invisible except
interactions. In 1TL MoSe2, the A exciton state at ∼1.6 eV is for the highest excitation energies, which is similar to the case
associated with the direct band gap at the K points in the of MoS2.12,47 Since interlayer vibrations are dominated by
momentum space,41,42 and the B exciton state at ∼1.8 eV with chalcogen to chalcogen interactions, no enhancement of shear
the spin−orbit-split-off band. There is also an absorption peak and breathing modes at the A exciton state (∼1.6 eV) can be
at ∼2.6 eV,42 which is often called a C exciton state.18,24,41 The understood. On the other hand, since the orbitals of the C
band-to-band transition (creation of an unbound electron−hole exciton states are related to the px orbitals of the chalcogen
pair) between the valence band maximum and the conduction atoms,17 enhancement of the shear mode at the C exciton state
band minimum starts at 2.2−2.4 eV43,44 and may not be (∼2.4 eV) seems reasonable.
8117 DOI: 10.1021/acsnano.6b04471
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Figure 4. Raman intensity as a function of excitation energies for (a) A1g/A1′(1), (b) E2g1, (c) E1g, (d) A2u, (e) A1g/A1′(2), (f) peak “d”, (g)
highest frequency shear, and (h) lowest frequency breathing modes.

CONCLUSIONS dispersed with a Jobin-Yvon Horiba iHR550 spectrometer (1200

grooves/mm for 785 nm and 2400 grooves/mm for all the other
In summary, we analyze resonance Raman spectra of 1−8TL excitation energies). A liquid-nitrogen-cooled back-illuminated charge-
MoSe2 and assign new peaks that appear near resonance with coupled-device detector was used. To access the low-frequency range
various exciton states. The resonance profiles of the Raman below 50 cm−1, volume holographic filters (Ondax and OptiGrate)
peaks reflect the joint density of states for optical transitions as were used to reject the Rayleigh-scattered light. The laser power was
measured by optical absorption spectra, but in some special kept at 50 μW for all measurements to avoid local heating of the
cases, the symmetry of the exciton wave functions leads to samples. The spectral resolution was below 1 cm−1. For resonance
selective enhancement of the A1g mode at the A exciton energy studies, normalization was carried out to extract the intrinsic resonance
and the shear mode at the C exciton energy. We find Davydov effects. First, the Raman intensities are normalized by the intensity of
the Si Raman peak at 520 cm−1 for each excitation energy to correct
splitting of intralayer A1g, E1g, and A2u modes due to interlayer for the efficiency of the detection system. Also, the effect of multiple
interaction for some excitation energies near resonances. Since interference from the substrate48 and the resonance Raman effect of
the number of split peaks and their relative intensities explicitly Si49 are considered. The wavelength-dependent refractive indices are
correlate with the number of layers, Davydov splitting can be taken from the measured values for 1TL MoSe2.46 Due to the
used as a fingerprint for the number of layers. Furthermore, by limitations of available data, bulk values50 were used for the refractive
fitting the spectral positions of interlayer shear and breathing indices in the UV region (for an excitation wavelength of 325 nm).
modes and Davydov splitting of intralayer modes to a linear The detailed normalization procedure is presented in ref 16.
chain model, we extract the strength of the interlayer
interaction. We find that the second-nearest-neighbor interlayer ASSOCIATED CONTENT
interaction amounts to about 30% of the nearest-neighbor
interaction for both in-plane and out-of-plane vibrations.
*
S Supporting Information
The Supporting Information is available free of charge on the
METHODS ACS Publications website at DOI: 10.1021/acsnano.6b04471.
Few-layer MoSe2 samples were prepared by mechanical exfoliation Complete set of Raman spectra for all thicknesses;
from bulk MoSe2 flakes (HQ Graphene) on Si substrates with a 285 polarized Raman spectra of 3TL MoSe2 with a 1.96 eV
nm SiO2 layer. The number of layers was determined by combination excitation energy; additional Raman spectra showing
of optical contrast, Raman, and PL measurements. An optical Davydov splitting for A2u, E1g, and A1g modes; calculation
microscope image and typical PL spectra are shown in Figure S15. of vibrational mode frequencies based on linear chain
Micro-Raman measurements were performed with eight different model; resonance profiles for peak “c” and A1g/A1′(3);
excitation sources: the 325 and 441.6 nm (3.82 and 2.81 eV) lines of a
He−Cd laser; the 457.9, 488, and 514.5 nm (2.71, 2.54, and 2.41 eV, optical microscope image of MoSe2 sample and photo-
respectively) lines of an Ar ion laser; the 532 nm (2.33 eV) line of a luminescence spectra of few-layer MoSe2 (PDF)
diode-pumped-solid-state laser; the 632.8 nm (1.96 eV) line of a He−
Ne laser; and the 784.8 nm (1.58 eV) line of a diode laser. Unwanted
AUTHOR INFORMATION
wavelengths from the lasers were filtered by reflective volume
holographic filters (Ondax and OptiGrate). The laser beam was Corresponding Author
focused onto the sample by using a 50× objective lens (0.8 N.A.) for *E-mail: [email protected].
all excitation wavelengths except for the 325 nm excitation, for which a
40× UV objective lens (0.5 N.A.) was used. The scattered light was Author Contributions
†
collected by the same objective lens (backscattering geometry) and K. Kim and J.-U. Lee contributed equally.
8118 DOI: 10.1021/acsnano.6b04471
ACS Nano 2016, 10, 8113−8120
ACS Nano Article

Notes (16) Lee, J.-U.; Park, J.; Son, Y.-W.; Cheong, H. Anomalous Excitonic
The authors declare no competing financial interest. Resonance Raman Effects in Few-Layered MoS2. Nanoscale 2015, 7,
3229−3236.
(17) Carvalho, B. R.; Malard, L. M.; Alves, J. M.; Fantini, C.;
ACKNOWLEDGMENTS Pimenta, M. A. Symmetry-Dependent Exciton-Phonon Coupling in
This work was supported by the National Research Foundation 2D and Bulk MoS2 Observed by Resonance Raman Scattering. Phys.
(NRF) grant funded by the Korean government (MSIP) Rev. Lett. 2015, 114, 136403; Phys. Rev. Lett. 2016, 116, 089904.
(NRF-2016R1A2B3008363) and by a grant (No. 2011- (18) Soubelet, P.; Bruchhausen, A. E.; Fainstein, A.; Nogajewski, K.;
0031630) from the Center for Advanced Soft Electronics Faugeras, C. Resonance Effects in the Raman Scattering of Monolayer
under the Global Frontier Research Program of MSIP. We and Few-Layer MoSe2. Phys. Rev. B: Condens. Matter Mater. Phys. 2016,
93, 155407.
thank H. C. Lee for helpful discussions.
(19) del Corro, E.; Botello-Méndez, A.; Gillet, Y.; Elias, A. L.;
Terrones, H.; Feng, S.; Fantini, C.; Rhodes, D.; Pradhan, N.; Balicas,
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