MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

CM100RX-24A

sig nd
¡IC ................................................................... 100A
¡VCES ......................................................... 1200V
¡7pack (3-phase Inverter + Brake)

¡Flatbase Type / Insulated Package /

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Copper (non-plating) base plate

n
¡RoHS Directive compliant

APPLICATION
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General purpose Inverters, Servo Amplifiers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

φ4.3

1.15
0.65
(7.4)
φ2.5
(20.5)

LABEL
φ2.1
1.5

(3.81)
0.8
3.5

1.2
r N ec
12.5

0
(7.75)
＊15
＊18.8

＊30.24
＊34.04

＊45.48
＊49.28

＊60.72
＊64.52

＊75.96
＊79.76

＊91.2
＊95
(102.25)
(110)
＊114.06

TERMINAL t = 0.8

SECTION A 136.9
121.7 4-φ5.5 MOUNTING HOLES
110 ±0.5
17 99 (20.5)
13 (21.14) 94.5 7
0.8
R

6.5
＊54.2
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
(50)

12
17
12

35
11 ＊34.52
6

＊30.72
50 ±0.5

10
57.5
39

62

9
22
39

8
77.1

7
6

＊15.48
17
12

6
t

36
5 ＊11.66
13.64 14

1 2 3 4

0
No
(21.14)

A
(3) (5.4) 6 8.5
6.5

12.5 12 17 6-M5 NUTS ＊Pin positions

(SCREWING DEPTH) 13.5 20.71 22.86 22.86 22.86 with tolerance φ0.5

17 +1
-0.5

TH1(11) Tolerance otherwise specified

fo

P(35)
NTC

Division of Dimension Tolerance

GuP(34) GvP(26) GwP(18)
B(4) TH2(10) 0.5 to 3 ±0.2
EuP(33) EvP(25) EwP(17)
over 3 to 6 ±0.3
U(1) V(2) W(3)
over 6 to 30 ±0.5
GB(6) over 30 to 120 ±0.8
EB(5) GuN(30) GvN(22) GwN(14)
over 120 to 400 ±1.2
N(36) EuN(29) EvN(21) EwN(13)
CIRCUIT DIAGRAM

Jan. 2009
 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

INVERTER PART
Symbol Parameter Conditions Rating Unit
VCES Collector-emitter voltage G-E Short 1200
V
VGES Gate-emitter voltage C-E Short ±20

sig nd
IC DC, TC = 90°C (Note. 1) 100
Collector current A
ICRM Pulse (Note. 4) 200
PC Maximum collector dissipation TC = 25°C (Note. 1, 5) 625 W
IE (Note.3) Emitter current TC = 25°C (Note. 1) 100
A
IERM(Note.3) (Free wheeling diode forward current) Pulse (Note. 4) 200

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BRAKE PART

n
Symbol Parameter Conditions Rating Unit
VCES Collector-emitter voltage G-E Short 1200
V
VGES Gate-emitter voltage C-E Short ±20
IC DC, TC = 97°C (Note. 1) 50
Collector current A
ICRM Pulse (Note. 4) 100
PC Maximum collector dissipation TC = 25°C (Note. 1, 5) 355 W
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VRRM(Note.3) Repetitive peak reverse voltage 1200 V
IF (Note.3) TC = 25°C (Note. 1) 50
Forward current A
IFRM(Note.3) Pulse (Note. 4) 100

MODULE
Symbol Parameter Conditions Rating Unit
Tj Junction temperature –40 ~ +150
r N ec

°C
Tstg Storage temperature –40 ~ +125
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Base plate flatness On the centerline X, Y (Note. 8) ±0 ~ +100 μm
— Torque strength Main terminals M5 screw 2.5 ~ 3.5
N·m
— Torque strength Mounting M5 screw 2.5 ~ 3.5
— Weight (Typical) 330 g
R

Note. 8: The base plate flatness measurement points are in the following figure.
Heat sink side

Y +：convex
–：concave
+

X
t
No

+
Heat sink side
fo

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A

HIGH POWER SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

INVERTER PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

sig nd
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 6 7 8 V
IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 μA
Tj = 25°C — 2.0 2.6
Collector-emitter saturation IC = 100A, VGE = 15V (Note. 6)
VCE(sat) Tj = 125°C — 2.2 — V
voltage
IC = 100A, VGE = 15V Chip — 1.9 —
Cies Input capacitance — — 17.5
VCE = 10V
Coes Output capacitance (Note. 6) — — 1.5 nF

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VGE = 0V
Cres Reverse transfer capacitance — — 0.34

n
QG Total gate charge VCC = 600V, IC = 100A, VGE = 15V — 500 — nC
td(on) Turn-on delay time VCC = 600V, IC = 100A — — 100
tr Turn-on rise time VGE = ±15V, RG = 3.0Ω — — 70
td(off) Turn-off delay time Inductive load — — 300 ns
tf Turn-off fall time — — 600
trr (Note.3) Reverse recovery time — — 150
(IE = 100A)
Qrr (Note.3) Reverse recovery charge — 5 — μC
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Tj = 25°C — 2.6 3.4
IE = 100A, VGE = 0V (Note. 6)
VEC(Note.3) Emitter-collector voltage Tj = 125°C — 2.16 — V
IE = 100A, VGE = 0V Chip — 2.5 —
Rth(j-c)Q Thermal resistance per IGBT — — 0.20
(Note. 1) K/W
Rth(j-c)R (Junction to case) per free wheeling diode — — 0.29
RGint Internal gate resistance TC = 25°C, per switch — 0 —
Ω
RG External gate resistance 3 — 31
r N ec

BRAKE PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA
VGE(th) Gate-emitter threshold voltage IC = 5mA, VCE = 10V 6 7 8 V
R

IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 μA

Tj = 25°C — 2.0 2.6
Collector-emitter saturation IC = 50A, VGE = 15V (Note. 6)
VCE(sat) Tj = 125°C — 2.2 — V
voltage
IC = 50A, VGE = 15V Chip — 1.9 —
Cies Input capacitance — — 8.5
VCE = 10V
t

Coes Output capacitance (Note. 6) — — 0.75 nF

VGE = 0V
Cres Reverse transfer capacitance — — 0.17
No

QG Total gate charge VCC = 600V, IC = 50A, VGE = 15V — 250 — nC

IRRM(Note.3) Repetitive peak reverse current VR = VRRM — — 1 mA
Tj = 25°C — 2.6 3.4
IF = 50A (Note. 6)
VFM(Note.3) Forward voltage drop Tj = 125°C — 2.16 — V
IF = 50A Chip — 2.5 —
Rth(j-c)Q Thermal resistance per IGBT — — 0.35
(Note. 1) K/W
Rth(j-c)R (Junction to case) per Clamp diode — — 0.48
fo

RGint Internal gate resistance TC = 25°C — 0 —

Ω
RG External gate resistance 6.0 — 62

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

NTC THERMISTOR PART

Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
R Zero power resistance TC = 25°C 4.85 5.00 5.15 kΩ
ΔR/R Deviation of resistance TC = 100°C, R100 = 493Ω –7.3 — +7.8 %

sig nd
B(25/50) B constant Approximate by equation (Note. 7) — 3375 — K
P25 Power dissipation TC = 25°C — — 10 mW

MODULE
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
Contact thermal resistance Thermal grease applied

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Rth(c-f) (Note. 2) — 0.015 — K/W
(Case to fin) (Note. 1) per 1 module

n
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
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7: B(25/50) = In( R25 )/( 1 1
)
R50 T25 T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]

Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)

91.4 (Di/WN)
79.4 (Di/WP)
33.9 (Di/UN)
22.9 (Di/UP)

55.9 (Di/VN)
44.9 (Di/VP)

LABEL SIDE
r N ec

100.2
101.2
105.8
22.4

34.3

45.3

56.3

79.8

91.8
0

0 0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

16.9 Tr Tr Tr Di
UP VP WP 12 18.4
Tr Br
35
R

23.9 Tr Tr 11

27.6
Di UN Di VN Di WN Th 10
26.8
(62)
(50)

UP VP WP 9

34.6 Di Di Di 8
(77.1)

UN VN WN Tr 7
6 40.8
36 Br 5

1 2 3 4
t
No

(110)
(121.7)
(136.9)

Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
fo

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

P P P

V VGE = 15V IC VGE = 0V

GuP GuP

sig nd
EuP EuP

U U B

VGE = 0V VGE = 15V V VGE = 15V V

IC IC
GuN GuN GB

De me
EuN EuN N EB N
N

n
P side Inverter part Tr N side Inverter part Tr Br Tr
(example of U arm) (example of U arm)
VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GwN-EwN, GB-EB) GwN-EwN, GB-EB) GuN-EuN, GvN-EvN, GwN-EwN)

VCE(sat) test circuit

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P P P

V VGE = 0V IE VGE = 0V V IF
GuP GuP
r N ec

EuP EuP
B
U U

VGE = 0V VGE = 0V V VGE = 0V

IE
GuN GuN GB

EB
N
R

EuN EuN
N N

P side Inverter part Di N side Inverter part Di Br Di

(example of U arm) (example of U arm)
VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GwN-EwN, GB-EB) GwN-EwN, GB-EB) GuN-EuN, GvN-EvN, GwN-EwN)
t

VEC/VFM test circuit

No

VGE 90% IE
IE
Arm
0V 0% trr
Load
–VGE
fo

+ VCC IC
0A t
90%

+VGE RG
VCE
0V Irr 1/2 ✕ Irr
VGE IC
–VGE 0A 10% Qrr = 1/2 ✕ Irr ✕ trr
tr tf
td(on) td(off)

Switching time test circuit and waveforms trr, Qrr test waveform

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
200 4

SATURATION VOLTAGE VCE(sat) (V)

VGE = 15 Tj = 25°C VGE = 15V

sig nd
20V
COLLECTOR CURRENT IC (A)

13 3.5

COLLECTOR-EMITTER
150 3

12 2.5

100 2

11 1.5

De me
50 1

n
10
0.5 Tj = 25°C
9 Tj = 125°C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

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COLLECTOR-EMITTER SATURATION FREE WHEELING DIODE
VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
10 103
SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C 7
5
EMITTER CURRENT IE (A)

8 3
COLLECTOR-EMITTER

102
r N ec

6 7
5
3
2
4
IC = 200A 101
7
IC = 100A 5
2
R

3
IC = 40A 2 Tj = 25°C
Tj = 125°C
0 100
6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

t

HALF-BRIDGE
No

CAPACITANCE CHARACTERISTICS SWITCHING CHARACTERISTICS

(TYPICAL) Inverter part (TYPICAL) Inverter part
102 103
7 7 td(off)
5 5
3
tf
2 3
Cies
SWITCHING TIME (ns)

101 2
CAPACITANCE (nF)

7
5 102
fo

3 Coes 7
2 5
100 3 td(on)
7
5 2
3 Conditions:
2 Cres 101 VCC = 600V
7
10–1
7 5 VGE = ±15V
5 3 RG = 3.0Ω tr
3 2 Tj = 125°C
2
VGE = 0V Inductive load
10–2 –1 100 0
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 101 2 3 5 7 102

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
103 102
7 7Conditions:

sig nd
5 5VCC = 600V

SWITCHING LOSS (mJ/pulse)

3 tf 3VGE = ±15V
SWITCHING TIME (ns)

2 td(off) 2RG = 3.0Ω

102 101 Tj = 125°C
7 7 Inductive load
5 5
3 td(on) 3 Eoff
2 2 Err
tr Conditions:

De me
101 VCC = 600V 100 Eon
7 7
VGE = ±15V

n
5 5
3 IC = 100A 3
2 Tj = 125°C 2
Inductive load
100 0 10–1 0
10 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 101 2 3 5 7 102

GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A)
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HALF-BRIDGE REVERSE RECOVERY CHARACTERISTICS
SWITCHING CHARACTERISTICS OF FREE WHEELING DIODE
(TYPICAL) Inverter part (TYPICAL) Inverter part
102 103
Conditions: 7
7 5
VCC = 600V
SWITCHING LOSS (mJ/pulse)

5 VGE = ±15V 3
Eon 2
3 IC, IE = 100A
Tj = 125°C 102
r N ec
lrr (A), trr (ns)

2 Irr
Inductive load 7
5
Eoff trr
101 3
7 2
Conditions:
5 Err 101 VCC = 600V
7
3 5 VGE = ±15V
RG = 3.0Ω
R

2 3
2 Tj = 25°C
Inductive load
100 0 100 0
10 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 101 2 3 5 7 102

GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A)

t

TRANSIENT THERMAL
No

GATE CHARGE CHARACTERISTICS IMPEDANCE CHARACTERISTICS

(TYPICAL) Inverter part
20 100
IC = 100A 7 Single pulse,
GATE-EMITTER VOLTAGE VGE (V)

THERMAL IMPEDANCE Zth(j–c)

5 TC = 25°C
NORMALIZED TRANSIENT

VCC = 400V 3
15 2

VCC = 600V 10–1

fo

7
5
10 3
2

10–2
7
5 5 Inverter IGBT part : Per unit base = Rth(j–c) = 0.20K/W
3 Inverter FWDi part : Per unit base = Rth(j–c) = 0.29K/W
2 Brake IGBT part : Per unit base = Rth(j–c) = 0.35K/W
Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.48K/W
0 10–3
0 100 200 300 400 500 600 700 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101

GATE CHARGE QG (nC) TIME (s)

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM100RX-24A
HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION CLAMP DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) Brake part (TYPICAL) Brake part
4 102
SATURATION VOLTAGE VCE(sat) (V)

VGE = 15V

sig nd
7
3.5

FORWARD CURRENT IF (A)

5
COLLECTOR-EMITTER

3 3

2.5 2

2 101
7
1.5

De me
5
1

n
3

0.5 Tj = 25°C 2 Tj = 25°C

Tj = 125°C Tj = 125°C
0 100
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V)

ew om
r N ec
R
t
No
fo

Jan. 2009