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CHAPTER – 3 SEMICONDUCTOR PHYSICS
Session 3 : Conductivity, current density and mobility
CONDUCTIVITY AND MOBILITY :
The charge carriers in a solid are in constant random motion, even at thermal equilibrium. At room
temperature, the thermal motion of an individual electron may be visualized as random scattering
from lattice atoms, impurities and other electrons as shown in fig.
Thermal motion of
electron in a solid
As this is a random motion of electrons, net current due to such randomly moving electrons is
zero. However, under the influence of electric field (E), each electron experiences a force
F = – eE. This force is insufficient to change the random motion of electrons but, effect of this
force when averaged over all electrons, results in a net motion of group of electrons in the
direction opposite to the direction of electric field. The net motion of electrons in a particular
direction under the influence of electric field is called drift motion. The current resulting due to
this drift motion is called as drift current.
Drift current density, (J) is defined as the drift current per unit area of cross section of the
conductor.
I
J -----------------(1)
A
Electric field (E) is the potential drop per unit length of the conductor.
dV V
E -----------------(2)
dx L
Resistivity () is the resistance offered by a conductor of unit length and unit cross sectional area.
A
ρ R -----------------(3)
L
Conductivity () is the reciprocal of resistivity.
1 L
σ -----------------(4)
ρ RA
From equation (4) and (2)
L V V I
σ E J
RA L R A A
J σ E -----------------(5)
This is the relation between current density and conductivity.
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Drift velocity (v) is defined as net displacement in electron position per unit time under the
influence of electric field.
Mobility () of electrons is defined as average drift velocity acquired by the electrons per unit
electric field.
v
μ -----------------(6)
E
m2
SI Unit of mobility is .
V - sec
To get the relation between conductivity and mobility :
If v is drift velocity of electrons, length traversed by the electrons in unit time = v
Therefore, volume swept by electrons in unit time = v A
If ‘n’ is number of electrons per unit volume, electrons in volume vA = nvA
If e is charge on electron, charge flowing per unit time = current I = nevA
I
Current density, J nev -----------------(7)
A
From equation (5) and (6)
J nev
Therefore, conductivity, σ n eμ -----------------(8)
E E
Conductivity of Semiconductors :
In semiconductors, the conduction takes place due to electrons in conduction band and holes in
valence band. Hence, the conductivity of semiconductor is equal to the sum of the conductivity
due to electrons and holes.
Conductivi ty of a semiconductor is -
σ σn σp
σ n e μn p e μp
where, n is electron density (number of electrons per unit volum e)
p is hole density (number of holes per unit volum e)
e is charge on electron
μ n is electron mobility
μ p is hole mobility
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Conductivity of Intrinsic semiconductor :
For intrinsic semiconductor, the free electron density (concentration) is equal to free hole density
i.e. n = p = ni = intrinsic carrier concentration.
Conductivi ty of intrinsic semiconductor is -
σ ni e μn ni e μp
σ n i e (μ n μ p )
Conductivity of Extrinsic semiconductor :
For n- type semiconductor, n >> p. Hence, neglecting the hole concentration, the conductivity of
n-type semiconductor can be written as –
σ n e μ n Nd e μ n
where, N d is concentration of donor atoms
For p- type semiconductor, p >> n. Hence, neglecting the electron concentration, the conductivity
of p-type semiconductor can be written as –
σ p e μ p Na e μ p
where, N a is concentration of acceptor atoms
Why mobility of holes is less than that of electrons?
Electrons in the conduction band can move more freely as in conduction band large number of
empty states is available. So, mobility of electrons in conduction band is more.
Holes are empty states in the valence band. Holes move in a valence band. Moving holes is
nothing but electrons moving through these empty states. Valence band has large number filled
states i.e. large number of electrons. Empty states i.e. holes are comparatively less. Thus, in
valence band, large number of electrons moves through less number of empty states. So, they
cannot move as freely as electrons. And therefore, mobility of holes in valence band is less.
1 Find resistivity of Ge at 300 0K. Given density of carriers is 2.5 x 1019 / m3. Mobility of
electrons is 0.39 m2/V-sec, mobility of holes = 0.19 m2/V-sec.
Given : ni = 2.5 x 1019 / m3,
n = 0.39 m2/V-sec, p = 0.19 m2/V-sec
For intrinsic semiconductor, conductivity is given by –
= 2.5 x 1019 x 1.6 x 10-19 (0.39 + 0.19)
= 2.32 (ohm-m)-1
1 1
Resistivit y ρ 0.43 ohm - m.
σ 2.32
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2. The resistivity of intrinsic InSb at room temperature is 2 x 10-4 ohm-cm. If the
mobility of electron is 6 m2/V-sec and mobility of hole is 0.2 m2/V-sec, calculate its
intrinsic carrier density.
-4 -6
Resistivity
For intrinsic semiconductor, conductivity is given by –
3. Find resistivity of Copper assuming that each atom contributes one free electron for
conduction. Given density of Cu = 8.96 gm / cm3, atomic weight = 63.5,
Avogadro’s Number = 6.023 x 1023 / gm-mole, Mobility of electron = 43.3 cm2/V-sec.
Number of atoms per unit volume is given by –
6.023 10 23 8.96
Atomic density
63.5
8.4985 10 22 /cm3
electron concentration is given by-
n 1 atomic density 8.4985 10 22 /cm3
Resistivity is given by –
1 1 1
ρ
σ n e μn 8.4985 10 1.6 10 19 43.3
22
1.698 10 6 - cm
4. Calculate conductivity of a germanium sample if donor impurity atoms are added to
the extent of one part in 106 germanium atoms at room temperature. Assume that
only one electron of each atom takes part in conduction process.
Given : Avogadro’s number = 6.023 x 1023 atoms / gm-mole
Atomic weight of Ge =72.6, mobility of electrons = 3800 cm2/volt-sec
Density of Ge = 5.32 gm / cm3
72.6 gm Ge contains 6.023 10 23 atoms
6.023 10 23
5.32 gm i.e. 1 cm3 will have 5.32 4.41 10 22 atoms
72.6
4.41 10 22
As donor impurity is 1 part in 10 6 , donor concentration, n
10 6
4.41 1016 / cm3
Now, conductivity, n e e 4.41 1016 1.6 10 19 3800 26.8 cm
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5. Calculate the number of donor atoms which must be added to an intrinsic
semiconductor to obtain the resistivity as 10-6 ohm-cm. Use mobility of electron = 1000
cm2/V-sec.
6. Silicon sample is doped with 1017 As atoms/cm3. Intrinsic concentration for Silicon at
room temperature is 1.5 x 1010 /cm3. What is the equilibrium hole concentration at
room temperature? Show the position of Fermi level.
Given : n = Nd = 1017 /cm3
ni = 1.5 x 1010 /cm3
For a semiconductor,
n . p n i2
Therefore, hole concentration is given by
p
n i2
1.5 1010
2
2.25 103 /cm3
n 1017
(E E ) / kT
n NC e C F
We know,
(E E ) / kT
n ni e F i
(E E )
F i
n
e kT
ni
n 5 1017
(E F E i ) kT ln ( ) 8.62 10 300 ln
10
ni 1.5 10
0.407 eV
Ec
EF
0.407 eV
Ei
1.1 eV
Ev
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