CHENMKO ENTERPRISE CO.

,LTD
2N7002SPT
SURFACE MOUNT
Dual N-Channel Enhancement MOS FET
VOLTAGE 60 Volts CURRENT 0.250 Ampere

APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE SC-88/SOT-363
* Small surface mounting type. (SC-88/SOT-363)
* High density cell design for low R
DS(ON).
* Suitable for high packing density.
(1)(S1) (D1)(6)
* Rugged and reliable.
* High saturation current capability. (G1) 0.65
1.2~1.4 2.0~2.2
* Voltage controlled small signal switch. (G2) 0.65

(D2) (S2)(4)
CONSTRUCTION 0.15~0.35 (3)

1.15~1.35
* Dual N-Channel Enhancement
MARKING
* 702S 0.08~0.15 0.8~1.1

0.1 Min. 0~0.1

(6) D1 G2 S2(4) 2.15~2.45
CIRCUIT

(1)S1 G1 D2(3) Dimensions in millimeters SC-88/SOT-363

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter 2N7002SPT Units
VDSS Drain-Source Voltage 60 V

VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V

VGSS Gate-Source Voltage - Continuous ±20
V
- Non Repetitive (tp < 50µs) ±40
ID Maximum Drain Current - Continuous TA= 25°C 250
mA
- Pulsed TA= 70°C 190
PD Maximum Power Dissipation TA= 25°C 200 mW
TA= 70°C 150 mW
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering
300 °C
Purposes, 1/16" from Case for 10 Seconds

Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient 450 °C/W
2002-4
 RATING CHARACTERISTIC CURVES ( 2N7002SPT )

Electrical Characteristics T A = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA 60 70 V
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1 µA
TC=125°C 0.5 mA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 10 nA
IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -10 nA

ON CHARACTERISTICS (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2.0 2.5 V

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA 1.7 3.0 Ω
VGS = 4.0 V, ID = 100 mA 2.5 4.0
VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500mA 0.6 3.75 V
VGS = 5.0 V, ID = 50 mA 0.09 1.5
ID(ON) On-State Drain Current VGS = 10 V, VDS = 7.5VDS(on) 800 1300 mA
VGS = 4.5V, VDS = 10VDS(on) 500 700
gFS Forward Transconductance VDS = 15 V DS(on), ID = 200 m A 250 mS

DYNAMIC CHARACTERISTICS
Qg Total Gate Charge VDS = 30 V, VGS = 10 V, 0.6 1.0 nC
Qgs Gate-Source Charge I D = 250 mA 0.06 25
Qgd Gate-Drain Charge 0.06 5
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, 25 50 pF
f = 1.0 MHz
Coss Output Capacitance 6 25
Crss Reverse Transfer Capacitance 1.2 5
ton Turn-On Time VDD = 30 V, RL = 200 Ω, 7.5 20 nS
ID = 100 mA, VGS = 10 V,
tr
RGEN = 10 Ω 6
toff Turn-Off Time VDD = 30 V, RL = 200 Ω, 7.5 20 nS
ID = 100 mA, VGS = 10 V,
tf
RGEN = 10 Ω 3

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS Maximum Continuous Drain-Source Diode Forward Current 115 mA
ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A
VSD Drain-Source Diode Forward VGS = 0 V, IS = 200 mA (Note 1)
0.85 1.2 V
Voltage
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
 RATING CHARACTERISTIC CURVES ( 2N7002SPT )

Typical Electrical Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current
2 .5 6
VGS = 10V 9.0 V GS =4.0V
8.0 4 .5
I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
2 7.0 5 5 .0

RDS(on) , NORMALIZED
6 .0
1 .5 6.0 4
7 .0

1 5.0 3 8 .0
9 .0
10
0 .5 4.0 2

3.0
0 1
0 1 2 3 4 5 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRA IN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain

with Temperature Current and Temperature
6.0 6

V GS = 10V V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

5.0 5
DRAIN-SOURCE ON-RESISTANCE

I D = 250m A
TJ = 1 2 5 °C
R DS(ON) , NORMALIZED

R DS(on) , NORMALIZED

4.0 4

3.0 3
25°C
2.0 2
-55°C
1.0 1

0 0
-5 0 -2 5 0 25 50 75 100 125 150 0 0 .4 0 .8 1 .2 1 .6 2
TJ , JUNCTION T EMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature
2 1 .1
T J = -55°C
VDS = 10V 25°C V DS = VGS
GATE-SOURCE THRESHOLD VOLTAGE

125°C 1 .0 5
1.6 I D = 1 mA
ID , DRAIN CURRENT (A)

Vth , NORMALIZED

1
1.2

0 .9 5

0.8
0 .9

0.4
0 .8 5

0 0 .8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)
 RATING CHARACTERISTIC CURVES ( 2N7002SPT )

Typical Electrical Characteristics (continued)

Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage

with Temperature Variation with Drain Current
1.1 2
I D = 250µA
DRAIN-SOURCE BREAKDOWN VOLTAGE

1 V GS = 0 V
1.075

IS , REVERSE DRAIN CURRENT (A)

0 .5
BV DSS , NORMALIZED

1.05
TJ = 1 2 5 °C
1.025 0 .1
25°C
0 .0 5
-5 5 ° C
1

0.975 0 .0 1

0 .0 0 5
0.95

0.925
-50 -25 0 25 50 75 100 125 150 0 .0 0 1
0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

60 1.0

40 V DS = 3 0 V
VGS , GATE-SOURCE VOLTAGE (V)

C iss
.8
20
CAPACITANCE (pF)

.6
10
C oss

5 .4

f = 1 MH z .2
2
V GS = 0V C rss
ID = 2 5 0 m A
1 0
1 2 3 5 10 20 30 50 0 0 .1 0 .2 0 .3 0 .4 0.5
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)

Figure 11. Figure 12. Switching Waveforms

VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%

D V OUT Output, Vout

10% 10%
VGS Inverted
R GEN DUT
90%
G
Input, Vin 50% 50%

10%
S
Pulse Width
 RATING CHARACTERISTIC CURVES ( 2N7002SPT )

Typical Electrical Characteristics (continued)

Figure 13. 2N7002SPT Maximum Safe Operating Area

3
2 100
us
1 Lim it 1m
I D , DRAIN CURRENT (A)

(ON) s
RDS
0.5
10m
s

0.1 100
ms
0.05 1s
10s
VGS = 10V DC
SINGLE PULSE
0.01 T A = 25° C

0.005
1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 14. 2N7002SPT Transient Thermal Response Curve

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 0 .2
R θJA (t) = r(t) * R θJA
0.1 0.1 R θJA = (See Datasheet)

0.05 0 .0 5

0 .0 2 P(pk)

0 .0 1
0.01 t1
t2
Single Pulse
TJ - T A = P * RθJA (t)

0.002 Duty Cycle, D = t1 /t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)