ZIET BHUBANESWAR
CH 14
ASSERTION REGION TYPE QUESTION
SL QUESTIONS
1 Assertion:-A p-n junction with reverse bias can be used as a photodiode to measure light intensity.
Reason:- In reverse bias condition, the current is small but it is more sensitive to change in incident light intensity.
(a)Both assertion and reason are true and reason is the correct explanation of assertion.
(b) Both assertion and reason are true but reason is not correct explanation of assertion.
(c)Assertion is true, reason is false.
(d) Assertion is false, reason is true.
2 Assertion:- The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure
silicon semiconductor.
Reason:- It is due to law of mass action
(a)Both assertion and reason are true and reason is the correct explanation of assertion.
(b) Both assertion and reason are true but reason is not correct explanation of assertion.
(c)Assertion is true, reason is false.
(d) Assertion is false, reason is true.
3 Assertion:-The temperature coefficient of resistance is positive for metals and negative for p-type semiconductor.
Reason:- The effective charge carriers in metal are negatively charged whereas in p-type semiconductors, they are
positively charged.
(a)Both assertion and reason are true and reason is the correct explanation of assertion.
(b) Both assertion and reason are true but reason is not correct explanation of assertion.
(c)Assertion is true, reason is false.
(d) Assertion is false, reason is true.
4 Assertion: At 0K germanium behaves as insulator.
Reason:- No free electrons present in conduction band at 0K.
(a)Both assertion and reason are true and reason is the correct explanation of assertion.
(b) Both assertion and reason are true but reason is not correct explanation of assertion.
(c)Assertion is true, reason is false.
(d) Assertion is false, reason is true.
ZIET BHUBANESWAR 10/10/2021 Page 1
5 Assertion:-LEDs are used in optical fibre transmission.
Reason:- LEDs are less response time.
(a)Both assertion and reason are true and reason is the correct explanation of assertion.
(b) Both assertion and reason are true but reason is not correct explanation of assertion.
(c)Assertion is true, reason is false.
(d) Assertion is false, reason is true.
6 For Q 6-10
ASSERTION REASON TYPE
Directions : In the following questions, A statement of Assertion (A) is followed by a statement of
Reason (R). Mark the correct choice as.
A. If both Assertion and Reason are correct and the Reason is a correct explanation of the
Assertion.
B. If both Assertion and Reason are correct but Reason is not a correct explanation of the
Assertion.
C. If the Assertion is correct but Reason is incorrect.
D. If both the Assertion and Reason are incorrect.
Assertion : A pure semiconductor has negative temperature coefficient of resistance.
Reason : In a semiconductor on raising the temperature, more charge carriers are released,
conductance increases and resistance decreases.
7 Assertion : A p-type semiconductors is a positive type crystal.
Reason : A p- type semiconductor is an uncharged crystal.
8 Assertion : Silicon is preferred over germanium for making semiconductor devices.
Reason : The energy gap in germanium is more than the energy gap in silicon.
9 Assertion : The diffusion current in a p-n junction is from the p-side to the n-side.
Reason : The diffusion current in a p-n junction is greater than the drift current when the
junction is in forward biased.
10 Assertion: Electron has higher mobility than hole in a semiconductor.
Reason: The mass of electron is less than the mass of the hole.
FOR Q 11-15 ASSERTION AND REASONING
(A) Both Assertion and reason are true and reason is correct explanation of assertion.
ZIET BHUBANESWAR 10/10/2021 Page 2
(B) Assertion and reason both are true but reason is not the correct explanation of assertion.
(C) Assertion is true, reason is false.
(D) Assertion is false, reason is true.
11 A: When base region has larger width, the collector current is small.
R: At larger width of the base region the rate of electron-hole recombination is more which results
in larger value of base current.
12 A: The conductivity of a pure semiconductor increases on doping.
R: Doping causes the reduction in bond strength.
13 A: Light emitting diode (LED) emits spontaneous radiation.
R: LEDs are forward biased p-n junctions.
14 A: The energy gap between the valence band and conduction band is greater in silicon than in
germanium.
R: Thermal energy produces fewer minority carriers in silicon than in germanium.
15 A: The conductivity of an intrinsic semiconductor at 0K is zero.
R: The bond strength of the semiconductor at 0K is much higher as compared to the bond strength
at room temperature.
Choose
(A) If Assertion and Reason both are correct and Reason is correct explanation of Assertion
(B) If Assertion and Reason both are correct but Reason is not correct explanation of Assertion
(C) If Assertion is correct but Reason is wrong
(D) If Assertion and Reason both are wrong
16 Assertion: For the diode in reverse bias, the current is very small
Reason: It is called reverse saturation current.
17 Assertion: The p-n junction diode primarily allows the flow of current
only in one direction (forward bias)
Reason: The forward bias resistance is low as compared to the reverse
bias resistance.
ZIET BHUBANESWAR 10/10/2021 Page 3
18 Assertion: For a half wave rectifier the output frequency is half of
input
Reason: Half wave rectifier got its name from such phenomena.
19 Assertion: Photodiodes used for detecting optical signal
Reason: Photodiodes convert electrical energy into light.
20 Assertion: Diode is an Ohmic conductor.
Reason: Diodes obey Ohm’s law.
Q 21-23
(A) Both Assertion and reason are true and reason is correct explanation of assertion.
(B) Assertion and reason both are true but reason is not the correct explanation of assertion.
(C) Assertion is true, reason is false.
(D) Assertion is false, reason is true.
21 Assertion: If there is some gap between the conduction band and the valence band, electrons in
the valence band all remain bound and no free electrons are available in the conduction band.
Then the materials an insulator.
Reason: Resistance of insulators is very low.
22 Assertion: If the temperature of a semiconductor is increased then it’s resistance decreases.
Reason: The energy gap between conduction band and valence band is very small.
23 Assertion: An N-type semiconductor has a large number of electrons but still it is electrically
neutral.
Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a
pentavalent impurity.
QNO 24-28
(A) Both A and R are true and R is the correct explanation of A.
(B) Both A and R are true but R is not the correct explanation of A.
(C) A is true but R is false.
(D) A is false and R is also false.
24 Assertion (A): If the temperature of a semiconductor is increased then its conductivity increases.
Reason (R): The energy gap between conduction band and valence band is very small.
ZIET BHUBANESWAR 10/10/2021 Page 4
25 Assertion (A): A p-type semiconductors is a positive type crystal.
Reason (R): A p- type semiconductor is formed by doping pentavalent impurity.
26 Assertion (A): An intrinsic semiconductor has equal number of electron and hole.
Reason (R): Thermally generated electron- hole pairs are the charge carriers in intrinsic
semiconductor.
27 Assertion (A): Gallium arsenide phosphide is used for making LEDs.
Reason (R): Valence and conduction bands overlap in case of semiconductors
28 Assertion (A): In a p-n junction under equilibrium there is no net current.
Reason (R): In equilibrium, the drift current is equal and opposite to the diffusion current.
Q NO 29-38
(A) Both Assertion and reason are true and reason is correct explanation of assertion.
(B) Assertion and reason both are true but reason is not the correct explanation of assertion.
(C) Assertion is true, reason is false.
(D) Assertion is false, reason is true.
29 Assertion: A p-n junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason: In a reverse bias condition the current is small but it is more sensitive to changes in
incident light intensity.
30 Assertion: The diffusion current in a p-n junction is from the p-side to the n-side.
Reason: The diffusion current in a p-n junction is greater than the drift current when the junction is
in forward biased.
31 Assertion: Diode lasers are used as optical sources in optical communication.
Reason: Diode lasers consume less energy.
ZIET BHUBANESWAR 10/10/2021 Page 5
32 Assertion: The number of electrons in a p-type silicon semiconductor is less than the number of
electrons in a pure silicon semiconductor at room temperature.
Reason: It is due to law of mass action.
33 Assertion: Silicon is preferred over germanium for making semiconductor devices.
Reason: The energy gap in germanium is more than the energy gap in silicon.
34 Assertion: The resistivity of a semiconductor decreases with temperature.
Reason: The atoms of a semiconductor vibrate with larger amplitude at higher temperature there by
increasing its resistivity.
35 Assertion: When diode is used as a rectifier, its specified reverse breakdown voltage should not be
exceeded.
Reason: When p-n junction diode crosses the reverse break down voltage, it gets destroyed.
36 Assertion: Si is preferred to make rectifiers over Ge.
Reason: Ge diodes have higher reverse leakage current which increases with temperature.
37 Assertion: The color of light emitted by a LED depends on forward bias.
Reason: The reverse biasing of p-n will lower the width of depletion layer.
38 Assertion: A Pure semiconductor has negative temperature coefficient of resistance.
Reason: On raising the temperature, more charge carriers are released, conductance increases and
resistance decreases.
ZIET BHUBANESWAR 10/10/2021 Page 6
1 A 27 (C)
2 A 28 (A)
3 B 29 A
4 A 30 B
5 C 31 C
6 A 32 A
7 D 33 C
8 B 34 (D)
9 C 35 (A)
13 (A) 36 A
14 (B) 37 D
15 (C) 38 A
16 B
17 A
18 D
19 C
20 D
21 C
22 A
23 B
24 (A)
25 (D)
26 (A)
PREPARED BY :
PGTs OF BHUBANESWAR, GUWAHATI,KOLKOTA
,RANCHI,SILCHAR,TINSUKIA regions.
ZIET BHUBANESWAR 10/10/2021 Page 7
