Basic Electronics Question Bank-2023-Dec
Basic Electronics Question Bank-2023-Dec
Module-1
SHORT QUE
1. A silicon diode has reverse saturation current of 2.5 μA at 300 k . Find forward voltage for a
forward current of 10 mA .
2. The reverse bias saturation current for a P-N junction diode is 1 μA at 300k. Determine its ac
resistance at 150 mv forward bias .
3. Write the difference between half wave & full wave rectifier.
4. Draw the Equivalent circuit of diode.
5. What is PIV. Calculate PIV of center tapped rectifier
6. Write the diode equation and define each term
7. Prove that the dynamic ac resistance is 26mv/ID
8. The leakage current in a certain diode is 25 μA at 25° C . Find the change in temperature required
9. Semiconductor is a negative temp coefficient of resistance
10. Write the disadvantages of center tapped rectifier.
11. Write the Advantage & disadvantage of si over Ge.
12. An ideal PN junction diode acts like a Bistable switch,justify?
LONG QUESTION
1. a) AC voltage of 230V is applied to a half wave rectifier circuit through a transformer
to turn ratio 10:1.The load resistance value is 1000Ω and diode internal resistance
value is 20 Ω.Determine Vm , Im, Iavg, Irms.
3. a ) Calculate V0 and draw the output wave form where V=5V, input signal +15
to -15. Diode is si diode.
b) Calculate V0 and draw the output wave form. Diode is ideal diode.
4)a) Calculate V0 and draw the output wave form . Diode is si diode.
MODULE-2
SHORT QUESTION
1. Write the current equation of CB, CE & CC.
2. The emitter current IE in a transistor is 3 mA. If the leakage current ICBO is 5 μA. α = 0.98.
Calculate the collector & base current.
3. In a transistor α = 0.995 , IE =10 mA & leakage current ICBO = 0.5 μA. Determine IC, IB,
ICEO.
4. IN a transistor circuit IE = 5mA , IC = 4.95mA , ICEO = 200 μA. Calculate β & ICBO.
5. What is the relationship between α,β, γ.
6. Which biasing circuit is most stable one & why?
7. Write the difference between BJT and FET?
8. What do you mean by transistor biasing?
9. Why CE BJT configuration is mostly used ?
10. Why BJT is known as Bipolar.
FOCUSED QUESTION
1. Write about the characteristics of CE transistor with proper diagram.
2. Write the three current equation of BJT. prove the relation between α,β,γ .
3. Given Vcc=20,RB=510KΩ, Rc=2.4KΩ, RE=1.5KΩ, β=100. calculate
IB,IC,IE,VCE,VC
4 . With neat sketch, explain the principle of working of bridge rectifier.
5. Determine IB, IC, VC , VB for the network. Given β=90.
6.. Given β=80, VCC=12, IC =2mA, VC=7.6V, VE=2.4 V . Determine Rc RE RB, VCE.
VB
7)
LONG QUESTION
1. a ) Determine IB, IC, VC , VB,VCE for the network. Given β=120.
4) a)
MODULE-3
SHORTQUESTION
1. Write the advantages of negative feedback
2. Write down the Shokley`s equation & define each term associated with it.
3. What is barkhausen criteria on oscillator.
4. Calculate the gain of negative feedback circuit.
5. Oscillator is a which type of feedback circuit and how much is the phase shift
LONG QUESTION
1(a) Calculate the feedback gain of voltage-series, current-shunt negative feedback
3.a) Calculate the feedback gain of current-shunt, current -series negative feedback.
MODULE-4
SHORT QUESTION
1. Draw the equivalent circuit of OPAMP
2. Write the characteristics of real OPAMP.
3. Write the characteristics of ideal OPAMP.
4. What is CMRR.
5. What is slew rate?
2.Determine the output voltage of an op-amp for input voltages of Vi1= 150 V, Vi2 = 140 V. The
amplifier has a differential gain of Ad =4000 and the value of CMRR is 100.
3. What is the output voltage when the input voltage is 2 V in the circuit
LONG QUESTION
1.a) Calculate the output voltage.
b) Calculate the output voltage for this circuit when V1 = 2.5 V and V2 = 2.25 V.
MODULE-5
SHORT QUESTION
6. Substract the following number using 2’s compliment.
72.125-29.625
7. Substract the following numbers using 1’s compliment 73.5-112.75
8. State & proof ABSOPTION LAW
9. Proof that the duality of EX-OR is its compliment.
10. Proof that the summation of all the min-term in three variable is equal to 1.
11. Design EX-OR gate using NAND.
12. Design OR gate using NAND.
13. Design AND gate using NOR.
14. 302/20=12.1 .Find out the base?
15. Draw the truth table and Logic diagram for the function F (x,y) = 1 when x = y=1.
1.
( A+ B ) ( C + D ) ( E+ F ) (G+ H ) apply De Morgan’s theorem
2. Without reducing, convert the following expressions to NOR logic.
(A’+ C) (ABC + ACD)
3. Without reducing , convert the following expressions to NAND logic.
( x y+ x + x + y )
4.Which logic gates are know as universal gates.Design basic gates by using NOR gate.
5. Implement the following function
i)F=A’+BC ’ using NAND gates only
ii)F=AB’+C, using NOR gates only
6. Find the minterm & maxterm.
F(A,B,C,D) = A+ B C' + AB D' + ABCD
5. a )AB + A(B + C) + B(B + C) = B+AC prove it
b) ABCD + AB(CD ) + ( AB¿ CD = AB + CD
LONG QUESTION
1. a) Find the minterm & maxterm of following Boolean Expression.
F(A,B,C,D) = A ( B+C ' ) ( A+ B' ) ( B+C+ D ' )
b) A B(C+ BD )+ A B=BC . prove it
2. a)Implement all the gates by using NAND gates
b) Reduce the Boolean expression AB + AC + A BC(AB+C)
3. a)(AB’+AC’)(BC+BC’)(ABC)=0 PROVE IT