UNIT- 5 t BIT'S “Transistor BIT FeT Cot erentigeet) npn PNP RET ‘ BU: Bipohr Tunction “Transistor (since current 48 pene toles & clechons- 6 il is bipolar’] Xa is ao Aymmehicd device * dwvenh wiltianm sheehky in R44 = Bea alyered, biterectional device. Tansislor :- “fansfen fam tesisince fam high to low cone (60) buh high cone. swans + Resistoy = Transistor . Symbol of transifon wpe : © B iene 8 6 N & f e Base - mediator ‘belween collector and emitlr miller - emis elechrong collecty - collects charges i x Oopfng Concembatizn:- eillen highly doped » ase lightly dope, collar is rrodeniy doped E>C>B x Area oceuped :- Emiler model area, hage less area, collector More area G>E>B we ease 2 lighlly doped, les area, thr layered - Ve Coren! 6 + om " a eeloteP Tes Tye ke Were E We. cla a9 Gnpul it can acl ag ip or common ax Base canna 0 4 fx coleclr cant aie 08 WH GM OM a8 Alp or carmen all pavomekig, = an Giller can acts 09 ! E cccfee ay Gommen enfler configuration ~ | ae re, ile potorecers . b and te * Vee-T) Bw. BeloreP itp fone er > Te ord be 3. ( Vee, Te)) Fe ct ggnrphitec ss mick : a TT Anput chamacleristic - Tp Vy Ver With Vee, constant. 5 output chatodlerishe ~ e Us Vee with Veg _gonsiont Fingut characterises C Jy Vs Vee] carry cwreeesL Ws ee} Tou Tecwe) 9 constan Vee Vce = corslont= nite ' 1 Active _Pegor 1 ta-asta ~ * : Tyr wa ‘ ’ 1 Tg: -10ia =f ‘ 1 Gattoft Bgbing W Vee) Few Common Base Configuration. Te i Tnput paatiles ep «Tey = Ou fooreing Vos, Tesaa SNPUT cHaRAcIERstICs iN ‘eurpur choaaartsttés 1 Ce Wb Ves) ! (Te Vs Veg)! : * veo” Veg-1VSINPUt cheacteristios: iF OUTPUT. | CHARACTERANCS vl ORAS dp VsiVee 64 (Qe Vs Vee) Jew , m9 cael MSS yeu) ed * Vee tw) ae amr : the ali ; iat e a ratio of —oulpok parahelers Vs input poramctera ives “Gand * GAIN = O/P_pavamelen ‘Up porameler current GAN CAx) - eunent Te ‘Up cinrent Ig Vollage AN CAy) = Mes. Wv Vee For Gormon emitter Configuration: Caren ce fe fakin doctor = FE S . topot one ee For Common &8e Gnfiguration:— Cnet 8 Armplication Sector Ci Vollage ith : i, Ves Ue a e For Gorton eailllcn- Gmdiguration :— : Ganrent Amplicaton selon for ec Cp) = ze . Te f= SE amet V>100° Nollage Gain -C Av) = ve :: jerce - high. ! 4 Th cab ‘tpedence bw a amrederne 9 c " Gn co 5p ap high ohh natty toed aha s+ mast elechonic eandiguralon, ce condiguation " ented - I cupli- will fave goal cut a? phase - Molse ener gions of — Operations - , & fant Te - emiley Base junction To- Base collector Junction EX BI C a) Bohman a. lronsislor Is. under Active region TE- Tnpul - Corward bing Tc OumtuT ~ reverse biage = = 2 V\g/s *], Veb le | 1 Veg f= ‘aly ade [ac Region ‘of Operation Arplication bs “Aative region Amplifien ie FB RB, RB PB Sahuraton vegon || ‘onsuilth flogic 1 | i Reverse as | Revereids Cis region! | ofa ou tegicd, | > 1 ie , |e ReveceBios'| found 82 duew Aetne "| —‘Ahator- || zoel Yegen | BGO gaol E ¢ Ire ‘ ' / 6 Amplifier i Active vegiar | 5 vr ‘oof NPAC Transfétor »,' Operalt chorge Carriers {= Tnjecled when elechons are ingcted thio depletion region, injecteet charge, charries (@) allracled town We krmina! of ballery - Acgyrmehical dying level s- due to —assymehic. doping , : doped & P “tN Se im tay iad ie for (5006 — Iphtles owe! s. Curven} produced due to majority charge charries + Operation of transistor NON “Transistors boggy 4 NPN traneistor 18 mest commonly used BIT & is consbucled by canduhiching P ype $¢ belween two Type Semicorduckes - + Enitler — cupply charge carries via nse farrninal b fte collectow Hed from emitler _ k Gilkeler collecls al) chage carwiens el + pase —confiol "the ow af cumerts, from’, etillen to collector . working of np lyanaiston:- ; > dn the, the efter, 062 junction (Je), "forwarded based with loge Vee and tase ealltlen junetion ig reverse ased + dy foryard bias “condition, Ve levminal of tallery is connected 0 Notype 8¢ emitter.) . On yeveree biag, He Romiral of balery is connected 40 Ni type Gc Ceoheclor’] Hf ie mes 1 . >the depkbon vegion of de 18 mall when ‘compared P* depletion ion of aD. ay 7 80 apr charge caries of Ni lye emnitler le elechons sais denier inky Ibiee vegion « flowing eros junel’on 9n 4p fly of eleclsors in omitler , thee will be emiller cumrent Je a: waitilene aac:OO —— a | Stew dechora enter into be Ome, (9 gly Pl Pu ae | |p eo tole, bv recmbiaton of ecers tales. takes ple, remtnig i Aecbons —ectogs. To. pnction ond enter ito -collecter yegion- H we to reambinaton vera current wil Flow in base vegion 4 tines curvent (Te) ‘ > te remaining cleckons flow nb edlector region « Je a. teault there will current flows called Collector current» Collector curvent is very Rovge when compatad » 5 h ots thee will ke Curent flaw from’ Galeclov fo emilfer, whieh, Hr r + flaw conteglled base» oh FR SM ony, chang? elias in NPM) working oF PNP Tronsiglor - ‘i up so Henaelon (BIT) which is conducled 1 sonduhithig Ap isc belween WO p yr gemiconducters - { called Jes jonchion - 68 Be ynchon- 2B fom , dboue, nee . ; ee wey ig Forward binsed and Base ‘collector jut Here emir is hi spi ve Iahtly doped ips Caledon 2 materably ay ceenpiye 8° alge ® Fahl cos 5 Weoo-teled avaible br sen base ' : > tue bo tigh doping,’ holes move, form _.emifer fo! ‘base - 60 ’cue , few, die. 40 oles moving fom: .€ bi . sthis cunent is Te * > hese / bolee tese holed ill’ moud’ indo, base. inte bose’ 8 vigy ped, only feu, ection ore quail , 60 vetemtinalion Bee’ teaaly. she feraining: ‘holes css Ihe Te junclion Che to sect jrae B” bree’ Gsrfenk 06 . iy eee x, the ‘emining oles enlew callecior vegan» collecb’ current “Ge. | i ee iy ae og puss uattenty wil: fl foro emily bleh. whe hice which Linking flow of Uren fh hain asree re fob ERB” ay FB B 1 } . ' lt eae Me oe e Veg Se Bee EOD Thee), TeRO Te(rg)Coxsenory DY %-Fe K-eB ® Configuration ¢ aa Te RB ei- ke Bec aTe CFB) Ja (eB) JefB8 oc-eB Te (2 me(28) Je (ee) : Te (8) Je cee) Relation belween @, B and ¥ for CS configuration, ; m& '= Te AysazNSB, =o Te ' Vee - for ce! configuration pose Ay.- “= -@© : oad Vee fr ce configuration 5 9 - Be Ay = 98 _@- ve Vee ce configuration 35 De, and Ac voltage, current Gin pararek: vameless :- =- Ze - VeE Bee B* te NV ee Ac povamekss « pie ac Aj = ‘vce 4iIse OVeE ©c parame Jeag : w= te Xe re pararebes - a. Ais ore cc ond = pavomelers of cuvvent, avamel ere + = pe Pp Bye a re parame - Ole ate 2 Dre pe and AC paramele7a of cuvrent, voltage for CB configuakon = Ves Av Ves oVe! Av = Vee. voltage. for cre configuration Nee. Vc QVce 45vVce Ay= Avi =ODL LE ww +# for ce conkyuralion: = Ta = ate x Ry ce configuatin: = Te - 6 Te se for ac configuration: Te = lis ¥ -Tnvespactive of combinations &: i | Ter tct+ta - «x commoni- k ° Je= eft 2) Te Ie qe 2 42? Te Te, i i a : E + eitg i {ost 8 = be Relation * Blvd case 2 S- "platen belween & ond “pe hes ng »ard Bs, lcsGeTWeeN OB ee Ce CANO AISIONL ‘an me Faramolor 9 66 i tow High stopuls Rosiahanea coin) ie ae culpa fesialanea Ino. “109 tow (100) Velage Grin(ay) «Veo © ys Vor ae ; . Von ive vs a Vie Gunvon! gaint) ; ket ! Amphfeation thelr ‘a % pe ie Te na wo) twdbb0) wig? wren Gain (A ' : Maan on “iy oh on, ae Biv) tah tnadenle Tons Ower gai Gh hoy igh tous ° ' Mplicalions, Anpedence io! 1] Patch Auci bgrs Sopa i ' bwo Ny vy Nigh low leakage Current iAnalyars "per CBs. cB i is Je tg Seward biased ond Je for common Bose’ Condigaralfon, is reveres biased- |, I «br ce, pf os Lp «Te + Tony | os ® +f oc, pe & Z pTe+ beco | —@4 “~ we non Tes IptIp en © Subshtle 3 in Tord (Io+ I) + Toso i: Ie-alc = dIgt Te80 a ‘Te (-a: 478+ Fee0 Ayrut Tes to 4 et Soe. Rere py Tee = Eceo + Ice Leakage Girrent Analysis for = GE » we Bea ze » Ic: BIgt ceo - with Te open. gS the ‘tolal leakage cuvrent Flowing ‘wonaisbor 8 = Teeo+ BIcso Teeo = (i+) Fewo) weed ak “Wal, calleden curen! lo Wansishy B sum,oF © Bla + Teed ae x we .Rnow that © Te =To*Tp*) . : x Te = Th tate + Tego. Te-Th= ate + CeeEfreck ( Bose width, modulation) ¢- Eorly + AS i we | inevease , Uce CReverse ‘vollge) , the base’ get eel due 4 depletion layer . * be heauy doping € move from high’ fo low in ease rae we Ferease Vea (more and tore the Je jnchon jepetion increases - b is | ya 8 hus ie ; ase gel blocked. this io called '=Vea fj. Ve I+ oe Tats teuol Signe te ty tego = Us = Ama Dn? Na WB we ~ wid?h of Bose . Je Veo = valn tc #) ig variation in “| pefinitfion 3 Early effect i : ’ pase due 10 varie = 7 effective width of applied 60% cdlecler vollage - [oonstauescs: Recombination decreases hence , 2 increases qv a) mainotity_ehaprien injected ia Je junction i 9) Punch throigh /reach | octur . se a Breakdown region + getiveragion Ves eve?ee Brp As @ Daverler Cory suith + Creanisistee) + eo on? ik: — ; pg wer ; c oO * Onverten case (1) 5 «V8E < OG ; e ae swancison - OFF SIA = 976" enevit —cultoff Region ese Gi): Vee > ‘ot cd adh oud spansiste- Sort Sw eaturation Region ON ssuilch ese ti) We < i‘ +Vee ; ‘ Rc 7C_vee= ry oe Vo = Vee - dee %e>0 Io=o cot) —“TnANISISRR — OM)le dn u Chonnel enchancement mosfer ig biased in anturation region. menses Jo =amA ub the dioin b Source vg is Upg-av, while seeping Vep CAE and gh weveased 1 a. a05mA wien US 4 © ov find channel £ aq Cox 19 (\ys- Vb) [ 19] a= F UnCox P(Yp- =Vih)? [i440] RO5= F tinGouk (ups Ui C4 oJ 2.05 T+5 = Qttor = g05(1442) (lo-8.aa = 0.05 182 =0-05- 2 = odat yt vesign Im Girrent Gurce oa Cox 2in = too wal Vn, = 085Y. 8 eh On = mA = + x10! xi ee (gh oe) Op = ee Co! (Uys hy CRED igi)” 5 » NBO6—+ Ors 598. -. axe QXOS - art 2 3. Sxtoo Xt x xt0 (Ugs-¥H) (GOK lo = a Mor Exot {(uys-018) also 2 ‘gi “Nag - 1a Vos 3 "Ugh ="vih = )Vog > Wey “08 8 Vo3> 4Vel ‘ Veo =5V Mak fied Vos” 6 Yo, gm ti) overdie lolloge Gwen nfox= Itoh gg =av Mbely JB =P Gon non. (iys--Vih) 7 a x0, 3 karo Jor BW aay and? cam Ointox = Umaly® ye 20s Whe => find ws & ee : 3 Io = x10 x (Uys-o5) lane AXIO OWS. = Ugg |= 45 .aay° Givn = vih= IV Unter = aly? wh =o 3) Rajon of —ofewations 4 @ Nmo03 vy Vasey Gind Gro nani 6 Cheats? 10 mill cyemes - Given’ E005, aincor = a maly>- yes av Uib=4V) Vog=tV_ Sind dy Wh =a. voo-SV ame [—? Vos 1 DEV 1p Jind which moster above hy (umos mg a) matk the eotninals aEU y A borsisor hed p-a9 x ay (ou) + (39) Cont) = 4.410 of p of a wires ig too d= find. Gin for given mosee-r aey = \ma/y™ 28 $ tin Gx = tra /y be ae y) Ima H LJ een 6 5 Vih= WV aa -5V “TRANISTOR _Sum a= 0A Ico> nA ie @ Ie = tom. Deke 2) value Te, Te a= B . 10 Ie = Ae itp © “ol ‘= 0107 = CAMA de = eta da = lo-019 = Atma Dae, Quen) find dg,Ie re Jo = 01968( 10) e-0965 Je=loma Do = 9.68mA AB= oi35mA hus h 4) val Cte wasp Find value of value A ‘glue og es of joreisby 13 cn 0 ee : P* or08 a> tor = 98 = ov p= B abe oN] e-19