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E8 & E9

This document provides specifications for the BCW68G small signal PNP transistor made by Vishay Semiconductors. It includes dimensions, ratings, electrical characteristics, and a switching waveform diagram. The transistor is in the SOT-23 plastic package and is suited for low-level, low-noise applications in hybrid circuits. Maximum ratings include collector-emitter voltage up to 45V and collector current up to 800mA.

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84 views4 pages

E8 & E9

This document provides specifications for the BCW68G small signal PNP transistor made by Vishay Semiconductors. It includes dimensions, ratings, electrical characteristics, and a switching waveform diagram. The transistor is in the SOT-23 plastic package and is suited for low-level, low-noise applications in hybrid circuits. Maximum ratings include collector-emitter voltage up to 45V and collector current up to 800mA.

Uploaded by

hatemh82
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BCW68G

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)

Top View
Mounting Pad Layout
Pin Configuration
1. Base 2. Emitter 3. Collector

0.031 (0.8)

2 max. .004 (0.1)

0.035 (0.9) 0.079 (2.0)

.007 (0.175) .005 (0.125)

.037(0.95) .037(0.95)

.045 (1.15) .037 (0.95)

0.037 (0.95)

0.037 (0.95)

.016 (0.4)

.016 (0.4)

.102 (2.6) .094 (2.4)

Features

Dimensions in inches and (millimeters)

Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: DG Packaging Codes/Options: E8/10K per 13 reel (8mm tape), 30K/box E9/3K per 7 reel (8mm tape), 30K/box
Ratings at 25C ambient temperature unless otherwise specified.

PNP Silicon Epitaxial Planar Transistors Suited for low level, low noise, low frequency applications in hybrid cicuits. Low Current, Low Voltage. As complementary type, BCW66G NPN transistor is recommended.

Maximum Ratings & Thermal Characteristics


Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Base Current (DC) Peak Base Current Power Dissipation, TS = 79C Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point
Note: (1) Mounted on FR-4 printed-ciruit board.

Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj TSTG RJA RJS

Value 45 60 5.0 800 1.0 100 200 330 150 65 to +150 285(1) 215

Unit V V V mA A mA mA mW C C C/W C/W

Document Number 88173 09-May-02

www.vishay.com 1

BCW68G
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics
DC Current Gain(1) at VCE = 10V, IC = 100A at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 Collector-Base Breakdown Voltage at IC = 10A, IB = 0 Emitter-Base Breakdown Voltage at IE = 10A, at IC = 0 Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 5V, IC = 50mA, f = 20MHZ Collector-Base Capacitance at VCB = 10V, f = 1MHz Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz
Note: (1) Pulse test: t 300s, D = 2%

(TA = 25C unless otherwise noted)

Symbol hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO

Min. 50 120 160 60 45 60 5

TYP. 250

Max. 400 0.3 0.7 1.25 2

Unit V V V V V V V

ICBO ICBO IEBO fT CCB CEB

200 6 60

20 20 20

nA A nA MHz pF pF

www.vishay.com 2

Document Number 88173 09-May-02

BCW68G
Vishay Semiconductors
formerly General Semiconductor

Fig. 1 - Switching Waveforms

10% INPUT 90%

t on

t off

10% OUTPUT 90% 10%


td t r ts tf

90%

Document Number 88173 09-May-02

www.vishay.com 3

Legal Disclaimer Notice


Vishay

Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

www.vishay.com 1

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