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2 SC 1971

This document provides specifications for the 2SC1971 silicon NPN power transistor from ISC. It is designed for use in RF power amplifiers for VHF band mobile radio applications, with a minimum power gain of 7dB and an output power of 6W. The transistor has high reliability and minimal variations between lots. It has maximum ratings for collector-emitter voltage, collector current, junction temperature and other parameters. Thermal and electrical characteristics are also provided such as cutoff currents, current gain, output capacitance and more.

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Soaduon Boris
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23 views

2 SC 1971

This document provides specifications for the 2SC1971 silicon NPN power transistor from ISC. It is designed for use in RF power amplifiers for VHF band mobile radio applications, with a minimum power gain of 7dB and an output power of 6W. The transistor has high reliability and minimal variations between lots. It has maximum ratings for collector-emitter voltage, collector current, junction temperature and other parameters. Thermal and electrical characteristics are also provided such as cutoff currents, current gain, output capacitance and more.

Uploaded by

Soaduon Boris
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SC1971

DESCRIPTION
·High Power Gain-
: Gpe≥ 7dB, PO= 6W; VCE= 13.5V
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 35 V

VCEO Collector-Emitter Voltage RBE= ∞ 17 V

VEBO Emitter-Base Voltage 4 V

IC Collector Current 2 A

Collector Power Dissipation


12.5
@TC=25℃
PC W
Collector Power Dissipation
1.5
@Ta=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W

Rth j-c Thermal Resistance,Junction to Case 10 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SC1971

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 4 V

ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.5 mA

IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.5 mA

hFE DC Current Gain IC= 0.1A; VCE= 10V 10 180

PO Output Power 6 W
VCC= 13.5V; Pin= 0.6W;
f= 175MHz
ηC Collector Efficiency 7 DB

COB Output Capacitance IE= 0; VCB= 20V, ftest= 1MHz 18 pF

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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