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MBR20100 Schottky Rectifier Specs

This document provides information on the INCHANGE Semiconductor Schottky Barrier Rectifier MBR20100. It lists key features such as majority carrier conduction, a guard ring for transient protection, and low power loss. It provides maximum ratings for operating temperature, storage temperature, peak repetitive reverse voltage, RMS reverse voltage, average rectified forward current, nonrepetitive peak surge current, and junction temperature. Thermal and electrical characteristics are also specified, including maximum instantaneous forward voltage, maximum instantaneous reverse current, and thermal resistance from junction to case.

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31 views2 pages

MBR20100 Schottky Rectifier Specs

This document provides information on the INCHANGE Semiconductor Schottky Barrier Rectifier MBR20100. It lists key features such as majority carrier conduction, a guard ring for transient protection, and low power loss. It provides maximum ratings for operating temperature, storage temperature, peak repetitive reverse voltage, RMS reverse voltage, average rectified forward current, nonrepetitive peak surge current, and junction temperature. Thermal and electrical characteristics are also specified, including maximum instantaneous forward voltage, maximum instantaneous reverse current, and thermal resistance from junction to case.

Uploaded by

DIAGNOSTICO AUTOMOTRIZ ARTEAGA
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

Schottky Barrier Rectifier MBR20100

FEATURES
·Metal of silicon rectifier, majonty carrier conduction
·Guard ring for transient protection
·Low power loss high efficiency
·High Surge Capability,High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

MAXIMUN RATINGS
·Operating Temperature: -55C to +150C
·Storage Temperature: -55C to +150C

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VRRM Peak Repetitive Reverse Voltage


VRWM Working Peak Reverse Voltage 100 V
VR DC Blocking Voltage

VR(RMS) RMS Reverse Voltag 70 V

Average Rectified Forward Current


IF(AV) 20 A
(Rated VR) TC= 135℃

Nonrepetitive Peak Surge Current


IFSM (Surge applied at rated load conditions half- 150 A
wave, single phase, 60Hz)

TJ Junction Temperature -55~150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

Schottky Barrier Rectifier MBR20100

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W

ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)

SYMBOL PARAMETER CONDITIONS MAX UNIT

VF Maximum Instantaneous Forward Voltage IF= 20A ; TC= 25℃ 0.84 V

Rated DC Voltage, TC= 25℃ 0.1


IR Maximum Instantaneous Reverse Current mA
Rated DC Voltage, TC= 125℃ 5.0

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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