AP16N50W
RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance D BVDSS 500V
▼ Simple Drive Requirement RDS(ON) 0.4Ω
▼ Fast Switching Characteristic ID 16A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
The TO-3P package is preferred for commercial & industrial applications D TO-3P
S
with higher power level preclusion than TO-220 device.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage +30 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 16 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 11 A
1
IDM Pulsed Drain Current 60 A
PD@TC=25℃ Total Power Dissipation 250 W
3
EAS Single Pulse Avalanche Energy 72 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W
Data and specifications subject to change without notice 1
201010266
AP16N50W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6.5A - - 0.4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=8A - 8 - S
IDSS Drain-Source Leakage Current VDS=500V, VGS=0V - - 20 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=500V, VGS=0V - - 200 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=16A - 33 53 nC
Qgs Gate-Source Charge VDS=400V - 11 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC
3
td(on) Turn-on Delay Time VDD=200V - 55 - ns
tr Rise Time ID=8A - 50 - ns
td(off) Turn-off Delay Time RG=50Ω,VGS=10V - 141 - ns
tf Fall Time RD=25Ω - 40 - ns
Ciss Input Capacitance VGS=0V - 1950 3120 pF
Coss Output Capacitance VDS=15V - 630 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 16 A
1
ISM Pulsed Source Current ( Body Diode ) - - 60 A
2
VSD Forward On Voltage IS=16A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=16A, VGS=0V - 495 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V, VGS=10V, L=1mH, RG=25Ω, IAS=12A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP16N50W
30 16
o
T C =25 C 16 V T C =150 C
o 16V
12 V 12V
10V 10V
ID , Drain Current (A)
7.0V
ID , Drain Current (A)
12
7.0V
20
V G = 6.0 V V G = 6.0V
10
0 0
0.0 4.0 8.0 12.0 16.0 20.0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1.2 2.8
I D =6.5A
V G =10V
2.4
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
2.0
1 1.6
1.2
0.9
0.8
0.8 0.4
-50 0 50 100 150 -50 0 50 100 150
o
T j , Junction Temperature ( C) T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
10 1.5
8 1.3
Normalized VGS(th) (V)
T j =150 o C T j =25 o C
IS(A)
6 1.1
4 0.9
2 0.7
0 0.5
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP16N50W
f=1.0MHz
12 10000
10 C iss
VGS , Gate to Source Voltage (V)
I D =16A
1000
V DS =400V
8
C (pF)
C oss
6 100
10
C rss
0 1
0 10 20 30 40 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100 1
Duty factor = 0.5
Normalized Thermal Response (Rthjc)
Operation in this area
limited by RDS(ON)
10 100us 0.2
ID (A)
0.1
1ms 0.1
0.05
PDM
1
10ms t
100ms 0.02
T
DC 0.01
Duty Factor = t/T
T C =25 o C Peak Tj = PDM x Rthjc + T C
Single Pulse Single Pulse
0 0.01
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1
V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
10V
QGS QGD
10%
VGS
td(on) tr td(off) tf Q
Charge
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
