tF | DC operation of Trepstntocs, : ——— i Neto: 2 Bi A Cl xamp te) j s| Total _tastantan cous to, Vac a 1 _2e 1% , Vee | @ = vatue Tea, Veta _ : +| AC instontaneous ‘. a, Vee . - A rms oe 1%5 Vee v 7 wl Maxtmuro ; Tere Vee sa a] CoWector Supply Vee ‘ is ol Base supply - Noo [ | Emitter supply ‘ ‘ Nee ee a €.| Common Emitter Choracteristi¢s . | e aSaturation . te Acta trey ter — geo Ig ae p y Ce Cut-off region. Veverse cor\y . : uh Voltage - , 29 % Trongistor Con be used ara gatch io Saturation tegion and x Cut-off region - A Saturation tegion +) P= Veer Mer id) tt * q w0.%e (We 0.2) 80 . Cut-off regton + Pe Vee Lor + Noe (od nO use Jn both regions poaer dissipaton 19 Fero. Therefore ce a Extra Note © Hhen tuo diodes are connected io Paral if ‘one diode conducts more current *° Heat up more. + More glectron - hole Pave © More current _aat_ge theough Ce © Diode att damage After Some Aime | One diode ull conduct total cursent_andFe The same olfect wit hoppen, ubin ae connect dion trenaistors is Povattety C one elt conduct: more cument ond 14 ean damage.) Common Base Characteriatics thin Veg 70 | 2 CB ic hawk Reverse bias => Tronastor {6 in Active region. 2 Therefore, fora gwen Tp, Te ic © constant current. Ghen rem <0 oe ood _ 2¢-B i forward bias => Tranostor (In Saturate regien. 2 Tn Gotucote region; Uce 40.9 4 than 0.4 Vee 2 Oey _2 In saturate region Vee - Veo * Ve ee Veg = 0-9-0.8 ©-0.6 Cte uill be the minimum Ue Value ae Vee can nat be greater than 0.9 v) Soturation region: fey te, e | bv Cut-off regionfF Ue © t= fly oe Ws Qrerh it es os tg - Ver_graph. Fe + be o| Ucp « Veg t Ver paigr iu : — 2| Fora given Vee, 9 8 |e chen ce inereage eas Vee cil decrease. _n|_etihen Uap £ 0-4 , transistor Comes fo Cut-off region and al 29 Onsen * lies transistor «2 For lower Wea Values, Vat 79.7 te_ current : ie Sw ; : ite Aah eealngteate © Fer a higher Vee whe he need a higher te Value to make rans hata ty cut-off fegian. Tree fiesae 4 Minee dente ‘Te _grph - &- Vee graph aft ele seb viet fegien: + o| Summary : Cwote) 2 E-@ Sunction C-B8 Junction Operation Mode - See Fo phd Soturate » RO be RB. ! 1. Cutoff 7 €e RB ‘ Ketwe : Ro . ‘ PEG op ores _\nverse. n| ©The folloaing + Constants of Propertimalities are desined for DC curcent Tega 2 Collector to bate Cureent emitter open Tete se Collector to emitter bate open ale Thecmnalty. Qerrratéd teatage cursents ace related ‘by _ cr Meta © Crt) Teas Lj t Under DE _ conditions Keb gives | lo 1 De Tee Ig,| Temperature ef fects in. De __biatin avon nd =e 5 oe. = a - iE [C0 Simple Bros, : = iE: of Nee fo_bias the Avonsigtors ‘ 3 — cutoff Tso | Ay RENEE) Saturotion Vee + 0.2V A 9) Active ; : Ee o Thermal Shoboikty ¢ il = - As a! troastor heats ite jjunehen temperature increased. »| ~ The ‘wrereases the collector current al = Der te theematty generated _e@- pas, cheb forces the jurcteo o| temperature te increase further untiJ transistor destroyed. cul et Thaé ts Nenoce’ ar itherma\ Punanny. che thermal Stability in Ue | branes creurt ig the abitty of the cireutk to neutralized ths | effec. c= : — a - z oe a(D-Emeter Feedback bias” at i Vee _ {fo bios the transistor 5 = D cutoff Ineo tes Mee 2) Saturate Vee + aay "Dd Active 0.9 2Vee < Veo a 1 ‘stobihty = See TE Seb Eg tet 2 * Th Ef ht— weft! Ty <2) 4— fat 13 temperature.KYL atound: CE loop > Nee = Te 4 Te Re 4 Vee i Vee = eC aaa) + Vee as Toate Tes - 1. Vee + Vee Ce toad tine) iz§ For Pe ks a ee ce . Evi _omund 26) loop saga Nee = Se Ra-+' Vor * TERE Vee = Typ + Vett Vor d ge ee then Ve inereates | omee Vee | Amd Gey 1# A 'constont, Vee Ht decrease er co “Collector to Bare bias - Py Active 0. 1.4 Neg < Vee 3 Saturation ts net poss: ble ans 0 Meo” Dir Ae seseg hey nti al . i KYL around Ce loo ps a [ ay Nee = Take + Vee s| to decreage Yee <0- 3.5 cl then Vee } 1 ‘then Tei wae” J, 18 also hah Then Vag ah Increase. but vt a for BE loo | Neet © Veuf's Vor but thre can nat be toppend »| ac Vee <0-9V+ Therefore Saturation gpesmerk ic not possible.gf A) Good Therma} - stabil effet, te Vel mae Neh ee nh rte ob Teh “0 Patential Drie Bras From Testo 3 Vows a Res” x all ft Roi + Reo _| - Ri ~ . Ras For get Thexenin Resstonee, have & we 2 Then Ge con Fe place the. | | | ] | [ | alm aw Poy + Reo 2° “shod_cweutt | _ — 1 p L al Ctreut tite Severin Resistor then Ri 2 | 3 Rep Rap ave fel _& This can folarate B Changes Com or 10% Alfference” po