X-Class HiPerFETTM IXFP20N85X VDSS = 850V

Power MOSFET IXFH20N85X ID25 = 20A

RDS(on)  330m

N-Channel Enhancement Mode

Avalanche Rated TO-220 (IXFP)

Symbol Test Conditions Maximum Ratings G

D
S
VDSS TJ = 25C to 150C 850 V D (Tab)
VDGR TJ = 25C to 150C, RGS = 1M 850 V TO-247 (IXFH)
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC = 25C 20 A
G
IDM TC = 25C, Pulse Width Limited by TJM 50 A D D (Tab)
S
IA TC = 25C 10 A
G = Gate D = Drain
EAS TC = 25C 800 mJ
S = Source Tab = Drain
dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns
PD TC = 25C 540 W
TJ -55 ... +150 C
TJM 150 C
Features
Tstg -55 ... +150 C
TL Maximum Lead Temperature for Soldering 300 °C 
International Standard Packages
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C 
High Voltage Package

Low RDS(ON) and QG
Md Mounting Torque 1.13 / 10 Nm/lb.in 
Avalanche Rated
Weight TO-220 3 g 
Low Package Inductance
TO-247 6 g

Advantages


High Power Density

Easy to Mount
Symbol Test Conditions Characteristic Values 
Space Savings
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 850 V
Applications
VGS(th) VDS = VGS, ID = 2.5mA 3.5 5.5 V

Switch-Mode and Resonant-Mode
IGSS VGS = 30V, VDS = 0V 100 nA Power Supplies

DC-DC Converters
IDSS VDS = VDSS, VGS = 0V 25 A 
PFC Circuits
TJ = 125C 1.5 mA 
AC and DC Motor Drives

Robotics and Servo Controls
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 330 m

© 2018 IXYS CORPORATION, All Rights Reserved DS100703D(4/18)

 IXFP20N85X
IXFH20N85X
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 6 10 S
RGi Gate Input Resistance 0.8 
Ciss 1660 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1730 pF
Crss 24 pF
Effective Output Capacitance
Co(er) Energy related VGS = 0V 67 pF
Co(tr) Time related VDS = 0.8 • VDSS 270 pF

td(on) 20 ns
Resistive Switching Times
tr 28 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off) 44 ns
RG = 5 (External)
tf 20 ns
Qg(on) 63 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC
Qgd 26 nC
RthJC 0.23 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
IS VGS = 0V 20 A

ISM Repetitive, pulse Width Limited by TJM 80 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr IF = 20A, -di/dt = 100A/μs 190 ns

QRM 1.6 μC
VR = 100V
IRM 16.5 A

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
 IXFP20N85X
IXFH20N85X
o o
Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C
20 45
VGS = 10V VGS = 15V
18 40
11V
16
35
14 10V
9V 30
I D - Amperes

I D - Amperes
12
25
9V
10
20
8
8V
15
6
8V
10
4
7V
2 5 7V
6V
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
VDS - Volts VDS - Volts

o
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Fig. 3. Output Characteristics @ TJ = 125 C
Junction Temperature
20 3.4
VGS = 10V
18 VGS = 10V
3.0
16 9V
2.6
14
RDS(on) - Normalized

I D = 20A
2.2
I D - Amperes

12
8V
I D = 10A
10 1.8

8 1.4
7V
6
1.0
4
6V 0.6
2

0 0.2
0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages
Drain Current vs. Junction Temperature
3.4 1.2

VGS = 10V
3.0
1.1 BVDSS
BVDSS / VGS(th) - Normalized

o
TJ = 125 C
2.6
RDS(on) - Normalized

1.0
2.2

1.8 o
TJ = 25 C 0.9

1.4 VGS(th)
0.8
1.0

0.6 0.7
0 5 10 15 20 25 30 35 -60 -40 -20 0 20 40 60 80 100 120 140 160
I D - Amperes TJ - Degrees Centigrade

© 2018 IXYS CORPORATION, All Rights Reserved

 IXFP20N85X
IXFH20N85X

Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance
20

20 18

16
16
14
o
TJ = 125 C

I D - Amperes
I D - Amperes

12 o
12 25 C
o
10 - 40 C

8
8
6

4 4

0 0
-50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
TC - Degrees Centigrade VGS - Volts

Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode

18 50
o
TJ = - 40 C
16 45

14 40
o
25 C
35
12
o
g f s - Siemens

125 C
I S - Amperes

30
10
25
8
20
6 TJ = 125 C
o
15
o
4 TJ = 25 C
10

2 5

0 0
0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I D - Amperes VSD - Volts

Fig. 11. Gate Charge Fig. 12. Capacitance

16 10,000

VDS = 425V
14 Ciss
I D = 10A
I G = 10mA
Capacitance - PicoFarads

12 1,000

10
VGS - Volts

Coss
8 100

4 10

2 Crss
f = 1 MHz

0 1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 1 10 100 1000
QG - NanoCoulombs VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXFP20N85X
IXFH20N85X

Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area
25 100
RDS(on) Limit
25μs

20 100μs
10
EOSS - MicroJoules

15

I D - Amperes
1

10

1ms
o
TJ = 150 C
0.1
o
5 TC = 25 C 10ms
Single Pulse
DC

0 0.01
0 100 200 300 400 500 600 700 800 900 10 100 1,000
VDS - Volts VDS - Volts

Fig. 15. Maximum Transient Thermal Impedance

1

0.1
Z(th)JC - K / W

0.01

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2018 IXYS CORPORATION, All Rights Reserved

 IXFP20N85X
IXFH20N85X
TO-220 Outline

1 - Gate
2,4 - Drain
3 - Source

TO-247 Outline

1 - Gate
2,4 - Drain
3 - Source

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: F_20N85X(S5-D901) 2-09-16