Smart High-Side Power Switch

Smart High-Side Power Switch

PROFET BTS711L1

Data Sheet
Rev 1.3, 2012-01-16

Automotive Power
 Smart High-Side Power Switch
BTS711L1

Smart Four Channel Highside Power Switch

Product Summary
Features Overvoltage Protection Vbb(AZ) 43 V
• Overload protection
• Current limitation
Operating voltage Vbb(on) 5.0 ... 34 V
• Short-circuit protection active channels: one two parallel four parallel
• Thermal shutdown On-state resistance RON 200 100 50 mΩ
• Overvoltage protection Nominal load current , 1.9 2.8 4.4 A
(including load dump) Current limitation ,  4 4 4 A
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown PG-DSO20
P-DSO-20
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

Application
• μC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits • AEC qualified
General Description • Green product (RoHS compliant)
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
®
feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Pin Definitions and Functions

Pin configuration (top view)
Pin Symbol Function
1,10, Vbb Positive power supply voltage. Design the
11,12, wiring for the simultaneous max. short circuit Vbb 1 • 20 Vbb
15,16, currents from channel 1 to 4 and also for low GND1/2 2 19 Vbb
19,20 thermal resistance IN1 3 18 OUT1
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of ST1/2 4 17 OUT2
5 IN2 logic high signal
IN2 5 16 Vbb
7 IN3
GND3/4 6 15 Vbb
9 IN4
IN3 7 14 OUT3
18 OUT1 Output 1 .. 4, protected high-side power output
ST3/4 8 13 OUT4
17 OUT2 of channel 1 .. 4. Design the wiring for the
IN4 9 12 Vbb
14 OUT3 max. short circuit current
Vbb 10 11 Vbb
13 OUT4
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.

Data Sheet 2 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Block diagram
Four Channels; Open Load detection in on state;

 
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Data Sheet 3 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 34 V
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 5) IL self-limited A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad 60 V
RI3) = 2 Ω, td = 200 ms; IN = low or high, dump
4)
each channel loaded with RL = 7.1 Ω,
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)5 Ta = 25°C: Ptot 3.6 W
(all channels active) Ta = 85°C: 1.9
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 1.9 A, ZL = 66 mH, 0 Ω one channel: EAS 150 mJ
IL = 2.8 A, ZL = 66 mH, 0 Ω two parallel channels: 320
IL = 4.4 A, ZL = 66 mH, 0 Ω four parallel channels: 800
see diagrams on page 9 and page 10
Electrostatic discharge capability (ESD) VESD 1.0 kV
(Human Body Model)
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN ±2.0 mA
Current through status pin (DC) IST ±5.0
see internal circuit diagram page 8

Thermal resistance
junction - soldering point5),6) each channel: Rthjs 16 K/W
junction - ambient5) one channel active: Rthja 44
all channels active: 35

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) R = internal resistance of the load dump test pulse generator
I
4) V
Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for V
bb
connection. PCB is vertical without blown air. See page 15
6) Soldering point: upper side of solder edge of device pin 15. See page 15

Data Sheet 4 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 1.8 A each channel, Tj = 25°C: RON -- 165 200 mΩ
Tj = 150°C: 320 400

two parallel channels, Tj = 25°C: 83 100

four parallel channels, Tj = 25°C: 42 50
Nominal load current one channel active: IL(NOM) 1.7 1.9 -- A
two parallel channels active: 2.6 2.8
four parallel channels active: 4.1 4.4
Device on PCB , Ta = 85°C, Tj ≤ 150°C
5)

Output current while GND disconnected or pulled IL(GNDhigh) -- -- 10 mA

up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time to 90% VOUT: ton 80 200 400 μs
Turn-off time to 10% VOUT: toff 80 200 400
RL = 12 Ω, Tj =-40...+150°C
Slew rate on dV/dton 0.1 -- 1 V/μs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C:
Slew rate off -dV/dtoff 0.1 -- 1 V/μs
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C:

Operating Parameters
Operating voltage7) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25°C: Vbb(u rst) -- -- 5.0 V
Tj =+150°C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 14 Tj =-40...+150°C:
Undervoltage hysteresis ΔVbb(under) -- 0.2 -- V
ΔVbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ΔVbb(over) -- 0.5 -- V
Overvoltage protection 8) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V
I bb = 40 mA

7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Data Sheet 5 Rev 1.3, 2012-01-16
 Smart High-Side Power Switch
BTS711L1

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Standby current, all channels off Tj =25°C: Ibb(off) -- 28 60 μA

VIN = 0 Tj =150°C: -- 44 70
Leakage output current (included in Ibb(off)) IL(off) -- -- 12 μA
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4, one channel on: IGND -- 2 3 mA
four channels on: -- 8 12
Protection Functions10)
Initial peak short circuit current limit, (see timing
diagrams, page 13)
each channel, Tj =-40°C: IL(SCp) 5.5 9.5 13 A
Tj =25°C: 4.5 7.5 11
Tj =+150°C: 2.5 4.5 7
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 4 -- A
two parallel channels -- 4 --
four parallel channels -- 4 --
(see timing diagrams, page 13)
Initial short circuit shutdown time Tj,start =-40°C: toff(SC) -- 48 -- ms
Tj,start = 25°C: -- 29 --
(see page 11 and timing diagrams on page 13)
Output clamp (inductive load switch off)11) VON(CL) -- 47 -- V
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ΔTjt -- 10 -- K
Reverse Battery
Reverse battery voltage 12) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 610 -- mV
IL = - 1.9 A, Tj = +150°C

9) Add IST, if IST > 0

10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).

Data Sheet 6 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel, Tj = -40°C: I L (OL) 101
-- 200 mA
Tj = 25°C: 10 -- 150
Tj = 150°C: 10 -- 150
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Open load detection voltage 13 ) Tj =-40..+150°C: VOUT(OL) 2 3 4 V
Internal output pull down
(OUT to GND), VOUT = 5 V Tj =-40..+150°C: RO 4 10 30 kΩ

Input and Status Feedback14)

Input resistance RI 2.5 3.5 6 kΩ
(see circuit page 8) Tj =-40..+150°C:
Input turn-on threshold voltage VIN(T+) 1.7 -- 3.5 V
Tj =-40..+150°C:
Input turn-off threshold voltage VIN(T-) 1.5 -- -- V
Tj =-40..+150°C:
Input threshold hysteresis Δ VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 μA
Tj =-40..+150°C:
On state input current VIN = 5 V: IIN(on) 20 50 90 μA
Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL4) 100 320 800 μs
off (other channel in off state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Delay time for status with open load after switch td(ST OL5) -- 5 20 μs
off (other channel in on state)
(see timing diagrams, page 13), Tj =-40..+150°C:
Status invalid after positive input slope td(ST) -- 200 600 μs
(open load) Tj =-40..+150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150°C, IST = +1.6 mA: -- -- 0.6

13) External pull up resistor required for open load detection in off state.
14) If ground resistors RGND are used, add the voltage drop across these resistors.
Data Sheet 7 Rev 1.3, 2012-01-16
 Smart High-Side Power Switch
BTS711L1

Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2 ST1/2
Channel 3 and 4 Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 ST3/4
(equivalent to channel 1 and 2)
BTS 711L1 BTS 712N1
Normal operation L L L L H H
L H L H H H
H L H L H H
H H H H H H
Open load Channel 1 (3) L L Z L H(L15)) L
L H Z H H H
H X H X L H
Channel 2 (4) L L L Z H(L15)) L
H L H Z H H
X H X H L H
Short circuit to Vbb Channel 1 (3) L L H L L16) L16)
L H H H H H
H X H X H
H(L17))
Channel 2 (4) L L L H L16) L16)
H L H H H H
X H X H H(L17)) H
Overtemperature both channel L L L L H H
X H L L L L
H X L L L L
Channel 1 (3) L X L X H H
H X L X L L
Channel 2 (4) X L X L H H
X H X L L L
Undervoltage/ Overvoltage X X L L H H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms


 
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Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for
reverse battery protection up to the max. operating voltage.

15) With additional external pull up resistor

16) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17) Low resistance to V may be detected by no-load-detection
bb

Data Sheet 8 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Overvoltage protection of logic part

Input circuit (ESD protection), IN1...4 GND1/2 or GND3/4
 
$



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=>  

  

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ESD zener diodes are not to be used as voltage clamp at
&
DC conditions. Operation in this mode may result in a
drift of the zener voltage (increase of up to 1 V). $ &

&

Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω
*

$ 13 Reverse battery protection

B* = 

= $  
> $
&



ESD-Zener diode: 6.1 V typ., max 5.0 mA; ?A
RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to !
be used as voltage clamp at DC conditions. Operation in 

this mode may result in a drift of the zener voltage

(increase of up to 1 V). &

$& $

& ?A&
Inductive and overvoltage output
clamp, OUT1...4 RGND = 150 Ω, RI = 3.5 kΩ typ,
Temperature protection is not active during inverse
 current operation.
>

 



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?A&

VON clamped to VON(CL) = 47 V typ.

.

Data Sheet 9 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Open-load detection, OUT1...4 GND disconnect with GND pull up

ON-state diagnostic condition:
(channel 1/2 or 3/4)
VON < RON·IL(OL); IN high

 


  

 
 
 

&



 
 
   &
 

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive
load

$
C


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&
 
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&

For an inductive load current up to the limit defined by EAS

(max. ratings see page 3 and diagram on page 10) each
GND disconnect switch is protected against loss of Vbb.

(channel 1/2 or 3/4) Consider at your PCB layout that in the case of Vbb dis-
 connection with energized inductive load the whole load
current flows through the GND connection.





 
 

&

   
  &

Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Data Sheet 10 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Inductive load switch-off energy

Typ. on-state resistance
dissipation  ; IL = 1.8 A, IN = high


E
RON [mOhm]
*//


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^

& (*/ FG*/H'
>

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(//
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*/ ,*H'
Energy stored in load inductance:
//
EL = 1/2·L·I L
2 *H'
*/
While demagnetizing load inductance, the energy =)/H'
dissipated in PROFET is
//
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
*/
with an approximate solution for RL > 0 Ω:
IL· L IL·RL /
EAS= (V + |VOUT(CL)|)
2·RL bb
(1+ |V ) / / / (/ )/
OUT(CL)|
Vbb [V]

Maximum allowable load inductance for Typ. open load detection current
a single switch off (one channel)5)    IN = high
 Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
IL(OL) [mA]
L [mH] )/
///
=)/H'
 /

// *H'
"

// ,*H'
,/
" I0

0/ FG*/H'

/ )/

/
 / * / * / * (/
 %* %* ( Vbb [V]
IL [A]

Data Sheet 11 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Typ. standby current

; Vbb = 9...34 V, IN1...4 = low

Ibb(off) [μA]

Tj [°C]

Typ. initial short circuit shutdown time

; Vbb =12 V

t off(S C ) [ms ec ]
60

50

40

30

20

10

0
40 -25 0 25 50 75 100 125 150
T j, s tart [°C]

Data Sheet 12 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load




 1
  3

J3


  






 13

 

*) if the time constant of load is too large, open-load-status may

occur
Figure 2a: Switching a lamp:
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling

   K#





 
1 '3

1 '3





""1 '3


The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 7.5 A typ. of the device.
Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 11)

Data Sheet 13 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in ON-state, open
shut down by overtemperature, restart by cooling load occurs in on-state
(two parallel switched channels 1 and 2)



   K#



 1 '3

 

 1 '3
   K
 
 #



""1 '3  1
 3  1  1 3  1
 3  3

 

td(ST OL1) = 30 μs typ., td(ST OL2) = 20 μs typ

Figure 4a: Overtemperature:

Reset if Tj <Tjt Figure 5b: Open load: detection in ON-state, turn
on/off to open load

 

IN2 channel 2: normal operation


 





channel 1: open load
L

 t 
1 3 1 )3 1 3

 1 *3

The status delay time td(STOL4) allows to distinguish between the

failure modes "open load in ON-state" and "overtemperature".

Data Sheet 14 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Figure 5c: Open load: detection in ON- and OFF-state Figure 6b: Undervoltage restart of charge pump
(with REXT), turn on/off to open load

  1'3


IN2 channel 2: normal operation

""=

=

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1!3

  
 K  13
13


13

  1 
 d(ST) 1 3 *3 13

 


td(ST OL5) depends on external circuitry because of high IN = high, normal load conditions.
impedance Charge pump starts at Vbb(ucp) = 5.6 V typ.

Figure 6a: Undervoltage: Figure 7a: Overvoltage:

 

 bb V ON(CL) Vbb(over) V bb(o rst)



V Vbb(u cp)
bb(under)
bb(u rst)



 



 

Data Sheet 15 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Package Outlines

0.35 x 45˚

2.65 max
2.45 -0.2
7.6 -0.2 1)

0.2 -0.1

9
0.23 +0.0

x
8˚ ma
1.27 0.4 +0.8
0.35 +0.15 2) 0.1 10.3 ±0.3
0.2 24x

20 11

GPS05094

1 12.8 1) 10
-0.2

Index Marking

1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Figure 1 PG-DSO-20-31 / PG-DSO-20-59 (Plastic Dual Small Outline Package) (RoHS-compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

Data Sheet 16 Rev 1.3, 2012-01-16

 Smart High-Side Power Switch
BTS711L1

Revision History

Version Date Changes

Rev. 1.3 2012-01-16 page 16: added package variant PG-DSO-20-59
Rev. 1.2 2010-03-16 page 6: changed reference to the timing diagram
Rev. 1.1 2009-07-13 page 1: added new coverpage
page 6: Initial short circuit shutdown time changed:
toff(SC) -40 °C to 48 ms
toff(SC) 25 °C to 29 ms
V1.0 2008-04-18 Creation of the Green Data sheet

Data Sheet 17 Rev 1.3, 2012-01-16

Edition 2012-01-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 1/17/12.
All Rights Reserved.

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