AP9918H/J

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Low on-resistance BVDSS 20V

D
▼ Capable of 2.5V gate drive RDS(ON) 14mΩ
▼ Low drive current ID 45A
▼ Surface mount package G
S
Description

The Advanced Power MOSFETs from APEC provide the G

D S
TO-252(H)
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ± 12 V
ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V 45 A
ID@TC=125℃ Continuous Drain Current, VGS @ 4.5V 20 A
1
IDM Pulsed Drain Current 140 A
PD@TC=25℃ Total Power Dissipation 48 W
Linear Derating Factor 0.38 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W

Data and specifications subject to change without notice 200227032

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AP9918H/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A - - 14 mΩ
VGS=2.5V, ID=9A - - 28 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
gfs Forward Transconductance VDS=10V, ID=18A - 26 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=20V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=125 C) VDS=20V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ± 12V - - ±100 nA
2
Qg Total Gate Charge ID=18A - 19 - nC
Qgs Gate-Source Charge VDS=20V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 10.5 - nC
2
td(on) Turn-on Delay Time VDS=10V - 7.5 - ns
tr Rise Time ID=18A - 83 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 18 - ns
tf Fall Time RD=0.56Ω - 23 - ns
Ciss Input Capacitance VGS=0V - 500 - pF
Coss Output Capacitance VDS=20V - 310 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 125 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 45 A
1
ISM Pulsed Source Current ( Body Diode ) - - 140 A
2
VSD Forward On Voltage Tj=25℃, IS=45A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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 AP9918H/J

120 80

o V G =4.5V
T C =25 C T C =150 o C V G =4.5V
V G =4.0V
V G =4.0V 60 V G =3.5V

ID , Drain Current (A)

ID , Drain Current (A)

80
V G =3.5V
V G =3.0V

40

V G =3.0V

40 V G =2.5V

V G =2.5V 20

0 0
0 1 2 3 4 0 1 2 3 4

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.8
26

I D = 18 A I D =18A
24
o 1.6
T C =25 C V G =4.5V
22

1.4
Normalized R DS(ON)

20
RDS(ON) (mΩ )

18 1.2

16
1.0

14

0.8
12

10 0.6
1 2 3 4 5 6 -50 0 50 100 150

V GS (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

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AP9918H/J

50 60

50
40
ID , Drain Current (A)

40

30

PD (W)
30

20

20

10
10

0 0
25 50 75 100 125 150 0 50 100 150

T c , Case Temperature ( o C) T c , Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

1
1000

DUTY=0.5
Normalized Thermal Response (R thjc)

0.2
100

10us 0.1
ID (A)

0.1 0.05

100us 0.02

PDM
SINGLE PULSE
10 0.01 t

1ms T

Duty factor = t/T

10ms
T c =25 o C Peak Tj = P DM x Rthjc + TC

Single Pulse 100ms

1
0.01
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS (V)
t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

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 AP9918H/J

12 10000 f=1.0MHz

I D =18A
10
V DS =10V
VGS , Gate to Source Voltage (V)

V DS =15V
8 V DS =20V 1000

Ciss

C (pF)
6
Coss

4 100
Crss

0 10
0 5 10 15 20 25 30 35 1 5 9 13 17 21 25 29

V DS (V)
Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

1.6
100

1.4

10
1.2

T j =150 o C
T j =25 o C 1
VGS(th) (V)
IF (A)

0.8

0.6
0.1

0.4

0.01 0.2
0 0.4 0.8 1.2 1.6 -50 0 50 100 150

V SD (V) Junction Temperature ( o C )

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature

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AP9918H/J

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS

RG G

10%
+ S
5v
VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE
QG
D OSCILLOSCOPE
5V
RATED VDS
G QGS QGD

S VGS
+

-
I I
G D

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

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