Introduction to Semiconductors (Instructor: Joonki Suh)
Homework #3
Due: Apr 10th (Mon) 10:30 AM
Submit to Mr. Hanbin Cho (Email: [email protected])
Problem #1.
Consider a two-dimensional electron gas in which the electrons are restricted to move freely
within a square area a2 in the xy plane. Following the procedure that you covered in the
previous lecture for the 3D case, show that the density of states g(E) is constant (independent
of energy).
Problem #2.
Using the values of the density of states effective masses me* and mh* in Table 1, calculate the
intrinsic concentration in Ge. What is ni if you use Nc and Nv from Table 1? Calculate the
intrinsic resistivity of Ge at 300 K.
Table 1. Selected typical properties of Ge, Si, InP, and GaAs at 300 K
Problem #3.
Using the values of the density of states effective masses me* and mh* in Table 1 above (Problem
#2), find the position of the Fermi energy in intrinsic Si, Ge and GaAs with respect to the middle
of the bandgap (Eg/2).
Problem #4.
A Si crystal has been doped with P. The donor concentration is 1015 cm-3. Find the conductivity,
and resistivity of the crystal.
Problem #5.
Find the concentration of acceptors required for a p-type Si crystal to have a resistivity of 1 Ω
cm.
Introduction to Semiconductors (Instructor: Joonki Suh)
Problem #6.
a. Consider the conductivity of a semiconductor, s = enµe + epµh. Will doping always increase
the conductivity?
b. Show that the minimum conductivity for Si is obtained when it is p-type doped such that
the hole concentration is
µe
pm = ni
µh
and the corresponding minimum conductivity (maximum resistivity) is
s min = 2eni µe µ h
c. Calculate pm and smin for Si and compare with intrinsic values.
Problem #7.
InP is a III-V semiconductor. Calculate the intrinsic concentration ni from Nc, Nv and Eg in
Table 1 (Problem #2). What is the intrinsic conductivity? Consider a p-type InP crystal has
been doped Zn (acceptors) with concentration 2×1017 cm-3. Find the conductivity of this p-InP.
If instead of Zn we had used Te (donors) with the same concentration, what would be the
conductivity? Use Table 2 for the electron and hole drift mobilities in InP.
Table 2. Ionized dopant scattering controlled drift mobility parameters in
µ » µ min + ( µ max - µ min ) /[1 + ( N d / N ref )a ]
Material µmin µmax Nref a
cm2 V-1 s-1 cm2 V-1 s-1 cm-3
Si electrons 68.5 1414 9.2×1016 0.711
Si holes 44.9 470.5 2.23×1017 0.719
GaAs electrons 500 9400 6.0×1016 0.394
GaAs holes 20 491.5 1.48×1017 0.38
InP electrons 0 5000 4.0×1017 0.45
InP holes 10 170 4.87×1018 0.62
Notes: Data selectively combined from various sources. Room temperature values
