NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY

GREATER NOIDA

LABORATORY MANUAL

ELECTRONIC DEVICES LAB

(KEC-351)

COURSE: B.TECH. (EC) SEMESTER: III

Department of Electronics and Communication Engineering

(NAAC & NBA ACCREDITED)
Approved by AICTE and Affiliated to Dr. A.P.J. Abdul Kalam
Technical University Uttar Pradesh, Lucknow
NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)

VISION

To be an Institute of academic excellence in the field of education, with future plan of

becoming a deemed university, earn name and hence win faith of the society.

MISSION

To impart to its students a high-quality education, develop their skills, broaden their mental
horizon and nurture them into competent and talented professionals to meet the challenges of
the new millennium.

VISION OF THE DEPARTMENT

To prepare the students for global competence, with core knowledge in Electronics and
Communication Engineering having the focus on research to meet the needs of industry and
society.

MISSION OF THE DEPARTMENT

M1: To become dynamic and vigorous knowledge hub with an exposure to state of art
technologies for connecting world.
M2: To provide in-depth knowledge of Electronics and Communication Engineering
ensuring the effective teaching learning process.
M3: To train students to take up innovative projects in a group with sustainable and inclusive
technology relevant to the industry and social needs.
M4: Empower students to become skilled and ethical entrepreneurs.
M5: To promote and adapt professional development in a perpetual demanding environment
and nurture the best minds for the future.

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NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)

PROGRAMME EDUCATIONAL OBJECTIVE

The graduates will be able to:

PEO1: To have excellent scientific and engineering breath as to comprehend, analyze,
design and solve real life problems using state-of-the-art techniques.
PEO2: To lead a successful career in industries or pursue higher studies or
entrepreneurial endeavors.
PEO3: To effectively bridge the gap between industry and academics for effective
communication skill, professional attitude and a desire to learn.

PROGRAM OUTCOMES (POs)

Engineering Graduates will be able to:

PO1 Engineering knowledge: Apply the knowledge of mathematics, science, engineering

fundamentals, and an engineering specialization to the solution of complex
engineering problems.
PO2 Problem analysis: Identify, formulate, review research literature, and analyze
complex engineering problems reaching substantiated conclusions using first
principles of mathematics, natural sciences, and engineering sciences.
PO3 Design/development of solutions: Design solutions for complex engineering problems
and design system components or processes that meet the specified needs with
appropriate consideration for the public health and safety, and the cultural, societal,
and environmental considerations.
PO4 Conduct investigations of complex problems: Use research-based knowledge and
research methods including design of experiments, analysis and interpretation of data,
and synthesis of the information to provide valid conclusions.
PO5 Modern tool usage: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modeling to complex
engineering activities with an understanding of the limitations.
PO6 The engineer and society: Apply reasoning informed by the contextual knowledge to
assess societal, health, safety, legal and cultural issues and the consequent
responsibilities relevant to the professional engineering practice.
PO7 Environment and sustainability: Understand the impact of the professional
engineering solutions in societal and environmental contexts, and demonstrate the
knowledge of, and need for sustainable development.
PO8 Ethics: Apply ethical principles and commit to professional ethics and responsibilities
and norms of the engineering practice.
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Electronic Devices Lab (KEC-351)
PO9 Individual and team work: Function effectively as an individual, and as a member or
leader in diverse teams, and in multidisciplinary settings.
PO10 Communication: Communicate effectively on complex engineering activities with
the engineering community and with society at large, such as, being able to
comprehend and write effective reports and design documentation, make effective
presentations, and give and receive clear instructions.
PO11 Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one’s own work, as a
member and leader in a team, to manage projects and in multidisciplinary
environments.
PO12 Life-long learning: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological
change.
COURSE OUTCOMES

At the end of Electronic Devices Lab (KEC 351) students will demonstrate the ability to:
CO1: Understand working of basic electronics lab equipment.
CO2: Understand working of PN junction diode and its applications.
CO3: Understand characteristics of Zener diode.
CO4: Design a voltage regulator using Zener diode.
CO5: Understand working of BJT, FET, and MOSFET and apply the concept in designing of
amplifiers

MAPPING OF CO’s WITH PO’S

PO’s
PSO1

PSO2
PSO3
PO10

PO11

PO12
PO1

PO2

PO3

PO4

PO5

PO6

PO7

PO8

PO9

CO’s

C351. 1 3 1 1 1 1 1 1 3 3 3 1 3 3 2 1
C351. 2 3 2 2 2 1 1 1 3 3 3 1 3 3 2 1
C351. 3 3 2 2 2 1 1 1 3 3 3 1 3 3 2 1
C351.4 3 2 2 2 1 1 1 3 3 3 1 3 3 2 1
C351.5 3 3 2 3 1 1 1 3 3 3 1 3 3 2 1

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Electronic Devices Lab (KEC-351)
GENERAL SAFETY GUIDELAINES

Following safety guidelines must be followed while performing lab experiments:

 Student entry in the lab is ensured strictly as per the allocated time slots or seeking prior
proper permission from the lab faculty or instructor.
 Students are expected to conduct themselves in a responsible manner while working in the
laboratory.
 They should keep their bags on the shelf provided outside the lab and carry only essential
items such as lab record, manual, pen-pencil, copy and calculator etc. inside the lab.
 Students are not allowed to carry food items (not even chewing gum), beverages and wa-
ter bottles while working in the laboratory.
 They are expected to observe good housekeeping practices and ensure equipment, sitting
stools and components to be handled carefully and kept at proper place after finishing the
work to keep the lab clean and tidy.
 While working in the lab
 Avoid stretching electrical cables and connectors while using the equipment.
 Rig the circuit and get it verified from the lab instructor before connecting it to
power source.
 Pay proper attention towards earthing of electrical equipment. Ensure proper ven-
tilation in the lab while working.
 Ensure use of wire clippers, insulating tape, plug-pins to prevent any electrical
shocking hazards.
 In case of any short circuit, sensing burning smell or observing any smoke switch
off power supply and immediately report to the faculty/lab instructor available in
the lab.
 In case of any minor injury please contact the lab instructor or lab faculty. The first aid
Box is available in the department in front of Room No 208.
 In case of any fire emergency, contact the faculty or lab instructor. For your information,
the fire safety equipment is available on each floor near notice board.

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NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)

University Syllabus

LIST OF EXPERIMENTS

1. Study of Lab Equipment and Components: CRO, multimeter, and function generator,
power supply- active, passive components and bread board.
2. P-N Junction diode: Characteristics of PN junction diode - static and dynamic resistance
measurement from graph.
3. Applications of PN Junction diode: Half & Full wave rectifier- Measurement of V rms, Vdc,
and ripple factor.
4. Characteristics of Zener diode: V-I characteristics of Zener diode, graphical
measurement of forward and reverse resistance.
5. Characteristics of Photo diode: V-I characteristics of photo diode, graphical measurement
of forward and reverse resistance.
6. Characteristics of Solar cell: V-I characteristics of solar cell, graphical measurement of
forward and reverse resistance.
7. Application of Zener diode: Zener diode as voltage regulator. Measurement of percentage
regulation by varying load resistor.
8. Characteristic of BJT: BJT in CE configuration- graphical measurement of h-parameters
from input and output characteristics. Measurement of A v, Ai, Ro and Ri of CE amplifier with
potential divider biasing.
9. Field Effect Transistors: Single stage common source FET amplifier - plot of gain in dB
Vs frequency, measurement of, bandwidth, input impedance, maximum signal handling
capacity (MSHC) of an amplifier.
10. Metal Oxide Semiconductor Field Effect Transistors: Single stage MOSFET amplifier
- plot of gain in dB Vs frequency, measurement of, bandwidth, input impedance, maximum
signal handling capacity (MSHC) of an amplifier.
11. Simulation of amplifier circuits studied in the lab using any available simulation
software and measurement of bandwidth and other parameters with the help of simulation
software.

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NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
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Electronic Devices Lab (KEC-351)
INDEX

S No Title of the experiment

CO

1 Study of lab equipment and components: CRO, Multimeter, Function CO1

Generator, Power supply- Active, Passive Components & Bread Board.
2 P-N Junction Diode: Characteristics of PN Junction Diode-Static and CO1, CO2
dynamic resistance measurement from graph.
3 Applications of PN Junction diode: Half & Full wave rectifier- CO1, CO2
Measurement of VRMS, VDC, and ripple factor.
4 Characteristics of Zener diode: V-I characteristics of Zener diode, CO1, CO3
graphical measurement of forward and reverse resistance
5 Characteristics of Photo diode: V-I characteristics of photo diode, CO1, CO2
graphical measurement of forward and reverse resistance.
6 Characteristics of Solar cell: V-I characteristics of solar cell, graphical CO1
measurement of forward and reverse resistance.
7 Application of Zener diode: Zener diode as voltage regulator. CO1, CO4
Measurement of percentage regulation by varying load resistor.
Characteristic of BJT:
(a) BJT in CE configuration- graphical measurement of h-parameters
8 from input and output characteristics. CO1, CO5
(b) Measurement of Av, Ai, Ro and Ri of CE amplifier with potential
divider biasing.
Field Effect Transistors: Single stage common source FET amplifier -
9 plot of gain in dB Vs frequency, measurement of, bandwidth, input CO1, CO5
impedance, maximum signal handling capacity (MSHC) of an amplifier.
Metal Oxide Semiconductor Field Effect Transistors: Single stage
10 MOSFET amplifier - plot of gain in dB Vs frequency, measurement of, CO1, CO5
bandwidth, input impedance, maximum signal handling capacity
(MSHC) of an amplifier.
Simulation of amplifier circuits studied in the lab using any available
11. simulation software and measurement of bandwidth and other parameters CO2, CO5
with the help of simulation software.
Measurement of Operational Amplifier Parameters: Common Mode Beyond
12
Gain, Differential Mode Gain, CMRR, Slew Rate. Syllabus
Applications of Op-amp: Op-amp as summing amplifier, Difference Beyond
13
amplifier, Integrator and differentiator. Syllabus
Beyond
14 Study of Power Devices: DIAC & TRIAC.
Syllabus

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NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
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Electronic Devices Lab (KEC-351)
EXPERIMENT NO.1

Study of lab equipment and components

AIM: Study of lab equipment’s and components: CRO, Multimeter, Function Generator,
Power supply- Active, passive Components & Bread Board.

PREREQUISITE-

Resistor color coding, resistance in series and parallel, capacitors: series and parallel
combination, analysis of time domain ac signals, basics of diodes and transistors

COMPONENTS/EQUIPMENTS REQUIRED:
Sr. No. Name Specification Quantity

1. Resistors 1KΩ 2

2. Capacitors Electrolyte and ceramic 1 each of any value

3. Diode, BJT, Multi-meter 1N4007, BY127, SL100, 1 each

4. Breadboard 1

5. CRO, Function Generator 20MHz, 5MHz 1 each

6. DC Power supply 0-30V, 0.5 mA 1

THEORY:

1. BREADBOARD:

In order to temporarily construct a circuit without damaging the components used to build it,
a temporary platform is needed that can both hold the components in place and provide the
needed electrical connections. The concept of breadboard that originated by amateur radio
operators for rigging their temporary circuits continues. The structural details of the
breadboard are shown in figure 1.1.

From the centre line of the breadboard, on each side five holes are internally connected
vertically. They remain insulated from the horizontal rows placed on either side of the board.
The horizontally aligned holes are internally connected making continuity for (5 sets of 5
holes) total 25 holes that can be used for power supply and ground connections while rigging
the circuit on the breadboard.

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Electronic Devices Lab (KEC-351)

Figure 1.1 Typical bread board and its connection details1

2. RESISTORS:
Resistors are passive electronic components that control flow of current introducing electrical
resistance into the circuit. Most axial resistors use a pattern of coloured stripes to indicate
resistance. Four-band identification is the most commonly used colour coding scheme on all
resistors. It consists of four coloured bands that are painted around the body of the resistor.
Resistor values are always coded in ohms (Ω).

Figure 2.2 Resistor structure with color coding2

Table 1.1 Resistor colour coding scheme for resistance computation.

3. CAPACITORS:
Color First Digit Second Digit Decimal Multiplier Tolerance
Black 0 0 100 –
Brown 1 1 101 –
Red 2 2 102 –
Orange 3 3 103 —
Yellow 4 4 104 –
Green 5 5 105 –
Blue 6 6 106 –
Violet 7 7 107 –
Grey 8 8 108 –
White 9 9 109 –
Gold – – – 5%
Silver – – – 10%
No Color – – – 20%
1
Image source: http://designbuildcode.weebly.com/breadboard-circuits.html
2
Image Source :https://www.parts-express.com/resources-resistor-color-code-chartImage

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Electronic Devices Lab (KEC-351)
Electrolytic capacitors: An electrolytic capacitor is a type of capacitor that uses an
electrolyte, an ionic conducting liquid, as one of its plates, to achieve a larger capacitance per
unit volume than other types. They are used in relatively high-current and low frequency
electrical circuits. However, the voltage applied to these capacitors must be polarized; one
specified terminal must always have positive potential with respect to the other. These are of
two types, axial and radial capacitors as shown in adjacent figure. The arrowed stripe
indicates the polarity, with the arrows pointing towards the negative pin.
Warning: connecting electrolytic capacitors in reverse polarity can easily damage or destroy
the capacitor. Most large electrolytic capacitors have the voltage, capacitance, temperature
ratings, and company name written on them without having any special colour coding
schemes.
Ceramic capacitors are generally non-polarized and almost as common as radial electrolytic
capacitors. Their size is generally small. Many capacitor manufacturers use a shorthand
notation to indicate capacitance value on them.
If a capacitor that has nothing other than a three-digit number printed on it, the third digit
represents the number of zeros to add to the end of the first two digits. The resulting number
is the capacitance in pF. For example, 101 represent 100 pF: the digits 10 followed by one
additional zero. If there are only two digits listed, the number is simply the capacitance in .
Thus, the digits 22 indicate a 22 value of the capacitor.

4. DIODES:
A diode is formed by joining two equivalently doped P-Type and N-Type semiconductor. On
the diode always a CATHODE terminal is marked.

Figure 1.3 Diode Symbol

5. TRANSISTORS:
Transistor is a three terminal active device invented in 1947 by American physicists John
Bardeen, Walter Brattain, and William Shockley in AT&T's Labs. Transistor was an
abbreviated combination of the words transconductance (or transfer) and Varistor .
Theoretically, its structure can be understood as two diodes connected back to back. But
practically, the structure has different regions having specific area and doping concentrations
that results into charge transfer operation through the device. There are two basic types of
transistors, Bipolar Junction Transistors (BJT) are current controlled devices having regions
named as Emitter , collector and base whereas voltage controlled type of transistors are called
Filed Effect Transistors (FET) and the regions are named as gate, drain and source.

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Electronic Devices Lab (KEC-351)

Figure 1.4 Transistor Symbolic representations.

Testing with a multi-meter
Use a multi-meter or a simple tester (battery, resistor and LED) to check each pair of leads for
conduction. Set a digital multi-meter to diode test and an analogue multi-meter to a low
resistance range.
Test each pair of leads both ways (six tests in total):
• The base-emitter (BE) junction should behave like a diode and conduct one way only
• The base-collector (BC)junction should behave like a diode and conduct one way only
• The collector-emitter (CE) should not conduct either way.

Figure 1.5 Identification of type of transistor3

Selecting a transistor: While selecting a transistor for a circuit user is expected to lookout
for following specifications in the data sheet.
Structure - type of transistor, NPN or PNP, a substitute must be the same type.
Case style - layout of the leads.
IC max. - Maximum collector current.
VCE max. - Maximum voltage across the collector-emitter junction, ignore this for low
voltage circuits.
hFE - the current gain (strictly the DC current gain). The guaranteed minimum value is
given because the actual value varies from transistor to transistor - even for those of the
same type! Note that current gain is just a number, so it has no units. The gain is often
quoted at a specific collector current IC which is usually in the middle of the transistor's
range, for example '100@20mA' means the gain is at least 100 at 20mA. Sometimes mini-
mum and maximum values are given.
Ptot max. - Maximum total power which can be developed in the transistor, note that
a heat sink will be required to achieve the maximum rating. This rating is important for
transistors operating as amplifiers; the power is roughly IC × VCE. For transistors operating
as switches the maximum collector current (IC max.) is more important.

3
Image Source: https://electronicsclub.info/transistors.htm
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Electronic Devices Lab (KEC-351)
Table 1.2 CRO FRONT PANEL CONTROL & THEIR FUNCTIONS4
1. POWER ON Put the instrument to main supply with LED indication.
2. INTENSITY Controls the brightness of the display.
3. FOCUS Controls the sharpness of the display
4. TIME BASE 18 step switch to enable selection of 18 calibrated sweep from
0.5 micro sec/div to0.2s/div in 1,2,5,….sequence
5. TIME BASE In calibrated position (CAL) the selected sweep speed holds
VARIABLE indicated calibration clockwise. It extends the sweep speed by
2.5 times approx. with the LED indication.
6. HOLD-OFF Provides 4:1 Hold off to enhance HF &Complex Signal
Triggering.
7.  POSITION/x5 Controls the horizontal position of the display. When this control
is pulled, it magnifies the sweep 5 times with LED indication.
8. LEVEL Variable control, selects the trigger point on the displayed
waveform.
9. AUTO/NORM In auto mode trace is displayed in absence of any input signal.
The display is then automatically triggered for signals above 30
Hz depending upon correct setting of trigger LEVEL controls.
10. INT/EXT INT; Display triggers from signals derived from CH1, CH2 or
line.EXT: triggering from any other external source fed through
EXT TRIG BNC socket.
11. LINE Triggers from power line frequency.
12. TV Triggers from low freq. component of TV signal (TV-V or TV-
H).
13. +/- Selects trigger point on either positive or negative slope of the
displayed waveform.
14. CH1/CH2 Select trigger signal in INT mode derived from either CH1 or
CH2 inputs.
15. HF Rej Introduces low pass filter (20 KHz) in trigger.
16. ac/dc Selects trigger signal coupling.
17. SWP/X-Y When pressed, converts CH2 input into x-channel and enable
use of the scope as on X-Y scope (Y-input via. CH1). In released
position, SWEEP operates.
18. 0.2, 1KHz 200 mv p-p 1 KHz square wave calibration signal.
19.  Positions Controls the vertical position of the display
20. ac/dc/gnd Selects input coupling / grounding (Grounds the amplifier input
but input signal is open circuited)
21. EXT-TRIG Input BNC for external trigger signal
22. INPUT BNC CH1/Y Input terminals to CH1/Y, CH2/X inputs
(CH2/X)
23. TRACE Screwdriver control to adjust horizontal tilt of the trace.
24. CH1/CH2 12 steps compensated attenuator from 5 mv/div to 20 V/div in
ATTENUATOR 1,2,5 sequence.
25. VERTICAL MODES
a. ALT/CHOP Selects switching mode for 2 channels while in DUAL
operations
b. DUAL/MONO (X- In DUAL, operates as a DUAL trace scope in ALT or CHOP
Y) mode as selected.

4
Source: www. NPTEL.ac.in

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Electronic Devices Lab (KEC-351)
c. CHANNEL In DUAL mode, when ADD switch is pressed signals of CH1
ADDTION (CH1- and CH2 are algebraically added.
CH2)
d. CHANNEL In DUAL mode, when ADD and CH2 INV switches are pressed
SUBRACTION CH2 signal is algebraically subtracted from CH1 signal.
(CH1-CH2)
e. CH2 INV When CH2 INV switch is pressed polarity of the signal to CH2
is inverted.

6. MULTIMETER:
Multimeter has multi functionalities like, it acts like ammeter, voltmeter and ohmmeter. It is a
handheld device with positive and negative indicator needle over a numeric LCD digital
display. Multimeters can be used for testing batteries, household wiring, electric motors and
power supplies.
7. CRO (Cathode Ray Oscilloscope):

The Cathode Ray Oscilloscope is an instrument which we use in laboratory to display

measure and analyze various waveforms of various electrical and electronic circuits.
Actually, cathode ray oscilloscope is very fast X-Y plotters that can display an input signal
versus time or another signal.

Figure 1.6 Front panel of CRO

8. FUNCTION GENERATOR:
A function generator is a signal source that has the capability of producing different types of
waveforms as its output signal. The most common output waveforms are sine-

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Electronic Devices Lab (KEC-351)
waves, triangular waves, square waves, and saw-tooth waves. The frequencies of such
waveforms may be adjusted from a fraction of a hertz to several hundred kHz.

Observation Table:

A. For Resistors and capacitors:

Sr. Name of Values computed Values measured by %

No.
component through code digital multimeter Error
1
2.

B. For CRO and function generator

Generate 1 K Hz, 10 V P-P sinusoidal, triangular and square wave signal using function
generator and analyze the waveform in CRO.

Generated frequency Measured

Sr.
Signal Using function frequency in % Error
No.
generator CRO
1 Sinusoidal
2 Triangular
3 Square wave

POST EXPERIMENT QUESTIONS:

1. Find the value of the resistor having color bands as Yellow, Violet, Red and silver.
2. What is the significance of fifth band in the 5-band color code indicate don a resistor?
3. On a capacitor body 473J is written. What does that mean?
4. Explain how can CRO be used to measure frequency and phase shift?

RESULT /CONCLUSION: Study of lab equipment’s CRO, Multimeter, Function

Generator, Power supply and components Active, passive Components & Bread Board has
been performed.

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 2

Characteristics of a PN Junction Diode

AIM: Characteristics of PN Junction Diode-Static and dynamic resistance measurement

from graph.

PRE-EXPERIMENT QUESTIONS:

1. State diode equation. Briefly explain all the terms in the equation.
2. What is the significance of reverse saturation current?
3. Why Silicon diodes are preferred over Germanium diodes?

COMPONENTS/EQUIPMENTS REQUIRED:

Sr. No. Name Specification Quantity

1 Regulated Power Supply 0-30V 1
2 Voltmeter 0 – 20 V DC 1
3 Ammeter 0 – 2mA DC, 1 each
0 – 200mA. DC
4 Junction Diode BY 127 1
5 Resistor 1 KΩ 1
6. Connecting Wires As many required
7. Bread board 1

THEORY:
A diode is a nonlinear active component formed by combination of P and N type of
semiconductor junction. Under forward biased condition in a PN junction diode, the P-side
is connected to the positive and N-side is connected to the negative terminal of the power
supply. This reduces the potential barrier. As a result, current flows from P to N-type in
forward direction. When the applied voltage is more than the barrier potential, the resistance
is small (ideally 0) and the current increases rapidly. This point is called the Knee-point or
turn-on voltage or threshold voltage. This voltage is about 0.3 volts for Ge diodes and 0.7
volts for Si diodes.

Under reverse biased condition, the P-side of the junction diode is connected to the negative
and N-side is connected to the positive terminal of the power supply. This increases the
potential barrier due to which no current should flow ideally. But in practice, the minority
carriers can travel down the potential barrier to give very small current. This is called as the
reverse saturation current. This current is about 2-20 μA for Ge diodes and 2-20 nA for Si
diodes (the values might differ for diodes of different makes).

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Electronic Devices Lab (KEC-351)
CIRCUIT DIAGRAM:

Figure 2.1 Forward Biased PN-Junction

Figure 2.2 Reverse Biased PN-Junction

PROCEDURE:
For Forward Characteristics
1. Connect the circuit on the breadboard as per the given circuit diagram as in figure 2.1.
2. Using the 0 – 30V power supply vary the voltage across the diode from 0 upwards in step
of 0.1 V i.e. Vf = 0.1 V, 0.2 V etc. At each value of diode voltage V f. Note down the
corresponding diode current If. Record the knee voltage or cut in voltage also.
3. Plot the graph of If Vs Vf on graph paper.
4. To determine the static resistance, select any point Q on the linear region of the forward
characteristic curve. Note the voltage and the current corresponding to this point. Then the
ratio of voltage to the current gives the static resistance at Q.
5. For the dynamic resistance mark two points on the linear region of the forward
characteristic curve. Draw the perpendicular on X & Y axis and evaluate the value of

and

6. Calculate the static resistance ( ) and the dynamic resistance ( ) using the formula.

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Electronic Devices Lab (KEC-351)

and

For reverse characteristics

7. Connect the circuit as in figure 2.2
8. Vary the voltage Vr in steps of 1 V and measure the corresponding reverse current.

RESULTS:
a) Knee voltage ……………
b) Static resistance…………….
c) Dynamic resistance……….

V-I CHARACTERISTICS OF DIODE:

Figure 2.3 V-I Characteristics of PN junction diode.

POST EXPERIMENT QUESTIONS:

1. What are the main two breakdown mechanisms observed in PN junction diodes?
2. What does the arrow-head indicate in the schematic symbol of PN junction diode?
3. Draw at least five symbols of different diodes which you have known/studied till now.

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 3

Applications of PN Junction Diode

AIM: Draw the wave shapes of electrical signal at the input & output points of Half wave, a
Full wave and Bridge rectifiers and also find out the ripple factor.

PRE-REQUISITE QUESTIONS:
1. What is a ripple factor?
2. What is efficiency?
3. What is PIV?
4. What are the applications of rectifier?

EQUIPMENT/COMPONENTS REQUIRED:

Sr. No. Equipment Specification Quantity

1 CRO 20MHz 1
2 Diode 1N 4007 4
3 Transformer Step down 1
4 Resistor 1KΩ 1
5 Capacitor 470 µF 1
6 Bread Board - 1
7 Connecting wires & CRO Probes - As many

THEORY: Rectification is the conversion of alternating current (AC) to direct current (DC).
This involves a device that only allows one-way flow of electrons. Rectifiers are categorized
in two types (i) Half Wave Rectifier (ii) Full Wave Rectifier
CIRCUIT DIAGRAM:

Figure 3.1: Half Wave Rectifier and its output waveform

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Electronic Devices Lab (KEC-351)

Figure 3.2: Full Wave center-tapped and Bridge Rectifier circuit along with its Output
Waveform

PROCEDURE:
1. Connect the circuit as given in figure and observe the AC waveform at the input
and pulsating waveform across R.
2. Measure the peak voltage Vm with the help of CRO.
3. Calculate Vdc ,Vac, Vrms & ripple factor.
4. Draw the wave form at the output of the capacitor across the load R.

OBSEVATION TABLE:

Half Full Bridge

Sr. No. Parameters Wave Wave Wave
Rectifier Rectifier Rectifier
1 DC output voltage
2 RMS Value (Vrms)

3 AC RMS Value (Vac)

4 Ripple Factor

5 PIV

RESULT: Mention the error in values computed by formula and measured practically.

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Electronic Devices Lab (KEC-351)
POST-REQUISITE QUESTIONS:

1. What is the significance of PIV in rectifier design?

2. The output of a 60Hz full-wave bridge rectifier has a 60 Hz ripple. It this circuit
working properly.
3. What is transformer utilization factor?

DESIGN EXPERIMENT:

Design a positive clipper and negative clipper circuit. (Both biased and un-biased types).
Trace the input and output waveforms

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 4

Characteristics of Zener Diode

AIM: To determine the V-I characteristics for Zener diode in forward and reverse biasing
mode and measure the forward and reverse resistance graphically.

PRE-EXPERIMENT QUESTIONS:

1. How Zener diode is different from the ordinary PN junction diode?

2. How doping concentration and Depletion region width influences the breakdown
phenomena?
3. Differentiate between avalanche and Zener breakdown.

REQUIREMENTS:
Equipment
Sr. No. Name Specification Quantity
1 Regulated Power supply Variable (Dual) 1
2 Voltmeter 0-20V 1
3 Ammeter 0-20mA 1
4 Zener Diode 5.1 or 8.2V 1
5 Resistor 1KΩ 1
6 Bread Board - 1
7 Connecting wires & CRO Probes Single strand as required

THEORY: Zener diode is a heavily doped PN unction diode used in reveres biased condition
for voltage regulation. The forward biased VI- characteristics are same as normal PN junction
diode with lesser knee voltage. Under reverse biased condition the region where characteristic
indicate constant voltage is called as Zener region. The direction of current in the Zener
region is opposite to that in the forward biased diode. The Zener diodes are used to conduct in
the Zener region. The location of the Zener region can be controlled by varying the doping
levels. The slight slope at the curve in the Zener region is due to the resistance associated with
Zener diode in conduction mode.

Figure 4.1 Zener diode -symbolic representation

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Electronic Devices Lab (KEC-351)
CIRCUIT DIAGRAM:

Figure 4.2 Forward and reverse biased Zener diode

PROCEDURE:
1. The forward bias characteristics of Zener diode are same as that of normal PN
junction diode. So the procedure of Experiment – 2 is followed using Figure 4.1.
2. For the Zener region characteristics, connect the circuit as per the Figure 4.2.
3. Vary the input voltage in the steps of 1V and measure the readings of voltmeter and
the ammeter in the circuit.

Figure 4.3 V-I characteristics of Zener diode.

OBSERVATION TABLE:
For Forward Biasing For Reverse Biasing

Sr. Input Voltmeter Ammeter Sr . Input Voltmeter Ammeter

No. Voltage Reading Reading No. Voltage Reading Reading
(V) (mA) (V) (mA)
1 0.1V 1 0.5V
2 0.3V 2 0.8V
3 … 3
4 10V 4

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Electronic Devices Lab (KEC-351)
ANALYSIS AND CONCLUSIONS:

Identify the values of knee voltage and the Zener breakdown voltage. Observe the rapid
increase in current while the voltage across the Zener diode remains constant in reverse bias.
Plot the graph across Zener current and Zener voltage. Calculate the forward and reverse
resistance.

POST EXPERIMENT QUESTIONS:

1. State the applications of Zener diode.

2. Why the Zener diode does offers finite reverse resistance?
3. What decides the magnitude of the breakdown voltage of a Zener diode?

DESIGN PROBLEM:

Design a circuit using Zener diode and a semiconductor diode to limit the voltage to 20V
during the positive portion of the applied voltage and to 0V for a negative excursion of the
applied voltage.

Input Waveform Required Output waveform

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GREATER NOIDA
Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 5

Characteristics of Photo diode

AIM: To study and verify the VI characteristics of Photodiode

PRE-EXPERIMENT QUESTIONS:
1. What is the difference between Photodiode and phototransistor?
2. Differentiate Direct and Indirect Semiconductor. Which is used as Optoelectronic
Device? Why?
3. What is Photogeneration and Radiative Recombination?

EQUIPMENT/ COMPONENTS REQUIRED:

Sr. Equipment/ Component Specification Quantity

No.
1. Optical transducer trainer ST 2301 1
Kit or (IR Sensor Module)
2. Patch Cords/ Connecting As many required 7-10
Wires
3. Multi-Meter/ DMM 2
voltmeter and ammeter (0-5V and 0-2mA)
4 Regulated power supply 0-5V 1

THEORY:
Photodiode A silicon photodiode is a solid-state light detector that consists of a shallow
diffused P-N junction with connections provided to the outside world. When the top surface is
illuminated, photons of light penetrate the silicon to a depth determined by the photon energy
and are absorbed by the silicon generating electron-hole pairs. The electron-hole pairs are free
to diffuse (or wander) throughout the bulk of the photodiode until they recombine.

The average time before recombination is the “minority carrier lifetime”. At the P-N junction
is a region of strong electric field called the depletion region. It is formed by the voltage
potential that exists at the P-N junction. Those light generated carriers that wander into
contact with this field are swept across the junction. If an external connection is made to both
sides of the junction a photo induced current will flow if light falls upon the photodiode. In
addition to the photocurrent, a voltage is produced across the diode. In effect, the photodiode
functions exactly like a solar cell by generating a current and voltage when exposed to light.

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Electronic Devices Lab (KEC-351)
CIRCUIT DIAGRAM:

Figure 5.1 Circuit connections

PROCEDURE:

Using trainer kit-

1. Connect circuit as shown in the workbook of the optical transducer trainer.
2. Adjust the offset control of DC amplifier to read zero in DMM meter for zero input at
DC amplifier.
3. Take readings of amplifier output voltage on the DMM as lamp voltage is increased in
1V steps.
4. Plot the graph for PIN photodiode current amplifier output voltage, buffer amplifier
output voltage and lamp filament voltage.

Using IR sensor module

1. For IR sensor module the supply voltage is connected to the Vin terminal and
voltmeter and ammeter is connected at the output terminal. Keeping the distance
constant, for varying input voltage values ranging from minimum voltage requirement
of LED to indicate the signal reception to 5V,the photo diode voltage and current
values are measured.

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Electronic Devices Lab (KEC-351)
OBSERVATIONS:

Lamp Filament PIN Diode DC amplifier PIN Diode buffer

Sr. No
Voltage (V) output voltage(V) output voltage (V)
1.
2.
3.

GRAPH:

Figure 5.2 VI characteristics of a photodiode

RESULTS: Study and verification of the VI characteristics of Photodiode has been done.

POST EXPERIMENT QUESTIONS:

1. List out various applications of Photodiode.

2. Define dark current in photodiode
3. Can we operate photodiode in forward bias condition?

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO.6

Characteristics of Solar cell

AIM: V-I characteristics of solar cell, graphical measurement of forward and reverse
resistance.

PRE-EXPERIMENT QUESTIONS:
1.
2.
3.

EQUIPMENT/COMPONENTS REQUIREMENTS:

Sr. No. Name Specification Quantity

1
2
3
4

THEORY:

CIRCUIT DIAGRAM:

PROCEDURE:

V-I CHARACTERISTICS OF SOLAR CELL:

OBSERVATIONS:

RESULTS:

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO.7

Application of Zener Diode

AIM: Realize the voltage regulator using Zener Diode & study the line and load regulation.
Also measure the percentage regulation by varying load resistor.

PRE-EXPERIMENT QUESTIONS:
1. What do you mean by voltage regulation?
2. Why do we require regulated supply voltage?
3. How voltage drop depends on the magnitude of load?

EQUIPMENT/COMPONENTS REQUIREMENTS:

Sr. No. Name Specification Quantity

1 Regulated Power supply Variable (Dual) 1
2 Voltmeter (0-20)V 1
3 Zener Diode 5.1V or 8.2V 1
4 Resistor 1K 1
5 Decade Resistance Box (DRB) 5 Dial 1
6 Bread Board - 1
7 Connecting wires & CRO Probes - as required

THEORY:

Line Regulation is the ability of the power supply to maintain its specified output voltage
over changes in the input line voltage. It is expressed as percent of change in the output
voltage relative to the change in the input line voltage.

Load regulation is the capability to maintain a constant voltage (or current) level on the
output channel of a power supply despite changes in the supply's load (such as a change in
resistance value connected across the supply output).

The percentage load regulation is given as [(VNL-VFL)/VNL]*100 where,

VNL = voltage at no load, VFL= voltage at full load

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GREATER NOIDA
Electronic Devices Lab (KEC-351)
CIRCUIT DIAGRAM:

Figure 5.1 Line Regulation Figure 5.2 Load Regulation

OBSERVATION TABLE:
For Line Regulation For Load Regulation

Load Resistor Value = Output Voltage value =

Input Load Output
Output
Sr. No. Voltage Sr. No. Resistance Voltage
Voltage (V)
(V) () (V)

PROCEDURE:

For Line Regulation, assemble the circuit as shown in Figure 5.1.

1. Vary the input voltage in regular steps ranging from 1V to 20V.
2. Measure the corresponding DC voltages at the output with the help of a voltmeter.
3. Tabulate the readings and plot the variation of supply voltage vs output voltage on a graph
paper.

For Load Regulation, set the input voltage so that the output voltage is of regulated value
1. Connect a DRB in series with a 100 resistor at the output. Vary
the resistance from 100 ohms to 100 K ohms and measure the output voltage and current
through the load.
2. Plot RL versus output voltage. Find load regulation as [(VNL-VFL)/VNL]*100

ANALYSIS AND CONCLUSIONS:

In the line regulation, initially the output voltage increases with the input voltage. But after a
certain value of input voltage, the output voltage becomes constant. This is the regulated
output voltage. Similarly, in load regulation, after a certain magnitude of load, the output
voltage becomes constant. Students will identify the magnitude of regulated voltage and
analyze the factors on which this magnitude depends.

POST EXPERIMENT QUESTIONS:

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Electronic Devices Lab (KEC-351)
1. What is the difference between line regulation and load regulation?
2. Can we use normal PN junction diode for voltage regulation?
3. What is the magnitude of load affecting the voltage regulation?

DESIGN PROBLEM:
1. Design any application and verify operation of Zener diode in forward biased
condition.
2. Design a voltage regulator that will maintain an output voltage of 20V across a 1
KΩ load with an input that will vary between 30V and 50 V. That is, determine
the proper value of Rs and the maximum current IZM.

EXPERIMENT 8(A)
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BJT Characteristics: CE Configuration

AIM: Graphical measurement of h- parameters from input and output characteristics of BJT
in CE configuration.

PRE-EXPERIMENT QUESTIONS:
1. Can BJT be designed using two diodes connected back to back?
2. What are hybrid parameters?
3. What is the significance of h-parameters?

EQUIPMENT/COMPONENTS REQUIREMENT:
Sr. No. Name Specification Quantity
1 Regulated Power Supply 0-30V 2
2 Ammeters 0 - 200mA,0-20mA 1each
4 Voltmeter 0 - 20 V DC 2
5 Transistor SL100 (NPN) /BC107B 1
6 Resistors 1K 2
7 Bread Board, - 1
8. Connecting Wires - As many required.

THEORY:
If BJT is considered as a two-port network and the input current i 1 ,output Voltage V2 are
takes as independent variables, the input voltage V1 and output current i2 can be written as
and

Figure 8.1 Two port Network representation

Figure 8.2 h-parameter representation of BJT in CE configuration.

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Electronic Devices Lab (KEC-351)
A. Input Characteristics: It is the curve between input current I B and input voltage VBE
constant collector emitter voltage V CE. The input characteristic resembles a forward biased
diode curve. After cut in voltage the I B increases rapidly with small increase in V BE. It means
that dynamic input resistance is small in CE configuration. It is the ratio of change in VBE to
the resulting change in base current at constant collector emitter voltage. It is given by ΔV BE /
ΔIB.

Input impedance =

Forward Current Gain=

B. Output Characteristics: This characteristic shows relation between collector current IC

and collector voltage for various values of base current. The change in collector emitter
voltage causes small change in the collector current for the constant base current, which
defines the dynamic resistance and is given as ΔV CE / ΔIC at constant IB. The output
characteristic of common emitter configuration consists of three regions: Active, Saturation
and Cut‐off.

Output admittance =

Reverse Voltage Gain=

CIRCUIT DIAGRAM:

Figure 8.3 CE configuration-input /output characteristics.

PROCEDURE:
Input Characteristics-
1. Connect the circuit as shown in the Figure 7.3

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Electronic Devices Lab (KEC-351)
2. Set VCB = 5V. Vary VBE from 0V upward in steps of 0.1V. At each step, note down the
corresponding value of IE.
3. Repeat for two more values of VCB (say 10V & 15V).
4. Tabulate the results and plot the graph IE Vs VEB. Determine the value of hie.
Output Characteristics
1. In the circuit set IE = 2mA.
2. Keeping IE constant, vary VCB from 0 to 10V in step of 1V and at each step note down the
corresponding value of IC.
3. Repeat the above procedure for IE = 4mA, 6mA.
4. Plot the curves of IC and VCB. Determine hfe

OBSERVATION TABLE:

Input Characteristics
VCE = 0 VCE = 2V VCE = 5V
VBE(V) IB(A) VBE(V) IB(A) VBE(V) IB(A)

Output Characteristics

IB = 20 (A) IB = 40 (A) IB = 60 (A)

VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

ANALYSIS AND CONCLUSIONS:

Students are expected to estimate the values of all h-parameters from the input -output
characteristics plotted for BJT in CE configuration They need to verify the same from the
data sheet of the transistor.
Students will analyze operating characteristics e.g., input impedance, output impedance,
voltage gain etc. and the factors that affect them.

POST EXPERIMENT QUESTIONS:

1. What is the function of base region of a transistor? Why is this region made thin and
lightly doped?
2. What are the applications of BJT in CB and CC Configuration?
3. How BJT can be operated as a switch? Explain the operation with neat circuit
schematic.

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 8(B)

BJT as an Amplifier

AIM: Measurement of Av, iI, Ro, Ri of CE amplifier with potential divider biasing.

PRE-EXPERIMENT QUESTIONS:

1. Explain the working of transistor in CE configuration?

2. Differentiate among CB, CC and CE configuration of transistor?
3. Why CE configuration is most widely used for voltage amplification?

EQUIPMENT/COMPONENTS REQUIREMENT:

Sr. No. Equipment Specification Quantity

1 Function Generator 5 MHz 1
2 CRO 20 Mhz 1
3 Regulated Power Supply 0-30V 1
4 Multimeter 1
6 Transistor SL100 (NPN) 1
7 100KΩ, 3.9KΩ 10KΩ, 1 each
Resistors
1KΩ 2
8 4.7 µF 2
Capacitors
47 µF 1
9 Bread Board - 1
10 Connecting wires & CRO
- As many required
Probes

THEORY:
Common amplifier is most widely used BJT configuration as an amplifier; this arrangement
provides a phase shift of 180 degree. To design an amplifier first DC biasing is done to set the
Q-point, then ac signal is allowed to superimpose on DC signal. In this experiment voltage
divider biasing is used as DC biasing. Then input ac signal can superimpose on it. The output
of this circuit will be gain of an amplifier times the applied ac signal.

By performing an ac analysis, the parameters of the given circuit diagram can be derived as
following-
(where )

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Electronic Devices Lab (KEC-351)
CIRCUIT DIAGRAM:

Figure 8.4. CE amplifier circuit diagram using voltage divider biasing

PROCEDURE:
1. Identify the terminals of the transistor.
2. Check the transistor for proper working using multimeter.
3. Verify the values of passive components used in the circuit.
1. Disconnect the function generator. Vary the DRB (R2), so that V CE is half of VCC.
(VCE = 0.5 VCC).
2. Now connect the signal generator in (sine waveform) and set the input voltage Vi =
20mv peak to peak at 1 KHz frequency.(can set the value up-to 200mVpeak to peak
so as to get proper output waveform). Observe the output waveform on a CRO. It
should be an undistorted sine waveform, with amplification.
3. Vary the frequency in regular steps (from 100Hz to 3MHz) and note down the corre-
sponding values of the output voltage on CRO.
4. Calculate the voltage gain & the gain in decibels using the formula.
i. Voltage gain = Vo/Vin.
ii. Voltage in dB = 20 log (Vo/Vin) dB.
5. Plot the frequency response curve on a semi log graph, values of gain in dB is plotted
vertically, the corresponding frequencies on x-axis.
6. From the graph note the frequencies (i.e.) lower cutoff frequency f 1 and the upper
cutoff frequency f2. f1, f2 are type points where the gain is 0.707 (max. gain) in the
linear scale. They are also the points where the gain is 3db below the max. gain value
in the log scale. Calculate the Bandwidth given by Bandwidth = (f2-f1).
7. Calculate the input impedance of the Amplifier by connecting a 1KΩ in series with
function generator. Measure the VR = V(g) – Vin and IR = VR/R and calculate the input
impedance (Zin).
8. Measure the maximum value of input voltage for which there is no distortion in the
input. Note down the MSHC.
OBSERVATION TABLE:

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Electronic Devices Lab (KEC-351)
Vin = ___________
Sr. No Input Frequency Output Voltage (Vo) Gain in dB = 20log(Vo/Vin)
1 100Hz
2
3 2MHz

RESULT:

Parameters Theoretical value Practical value

Ri
R0
Av

ANALYSIS AND CONCLUSIONS:

Students are expected to plot frequency vs gain graph and graphically calculate the bandwidth
and gain of the amplifier. Also compute the gain by theoretical formula and compare the
result.

POST EXPERIMENT QUESTIONS:

1. What is the need of coupling capacitor & bypass capacitor?

2. What is the use of emitter bypass resistor RE?
3. Draw the small signal equivalent circuit of the CE amplifier and compute the values
for gain, lower and upper cutoff frequency using formula.

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 9

Single stage common source FET Amplifier

AIM: Field Effect Transistors: Single stage Common Source FET amplifier- Plot a gain (dB)
Vs Frequency, Measurement of Bandwidth, Input Impedance, Maximum Signal Handling
capacity (MSHC) of an amplifier.

PRE-EXPERIMENT QUESTIONS:

1. Compare FET with BJT?

2. What is the significance of Ohmic resistance, Pinch off Voltage & Drain Saturation
current?
3. Why input impedance is very high in FET?

EQUIPMENT/COMPONENT REQUIREMENTS:

Sr .No. Equipment Specification Quantity

1 CRO 20MHz 1
2 DRB 5 Dial (0 – 1KΩ) 1
Regulated Power
3 0-30V 1
Supply
4 FET BFW 10 1
5 Resistors 1MΩ,1KΩµ, 1.5KΩ As indicated in the
6 Capacitors 0.047µf,2.2 µf circuit.
7 Bread Board - 1
Connecting wires &
8 - As many required
CRO Probes

THEORY:
Field effect transistors have the advantage over bipolar transistors of having an extremely
high input impedance along with a low noise output making them ideal for use in amplifier
circuits that have very small input signals. For amplifier design firstly, a DC biasing is
designed to ensure stability of the Q-point. The input signal enters via C1 this capacitor
ensures that the gate is not affected by any DC voltage coming from the previous stages. The
resistor RG holds the gate at ground potential. Its value typically is around 1 MΩ. The resistor
RS develops a voltage across it holding the source above the ground potential. Cs acts as a
bypass capacitor to provide additional gain at AC. The resistor R D develops the output voltage
across it, and C2 couples the AC to the next stage whilst blocking the DC.
The common source circuit provides a medium input and output impedance levels. Both
current and voltage gain can be described as medium, but the output is the inverse of the
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Electronic Devices Lab (KEC-351)
input, i.e. 180° phase change. This provides a good overall performance and as such it is often
thought of as the most widely used configuration.

CIRCUIT DIAGRAM:

Figure 9.1 Common Source JFET amplifier circuit.

PROCEDURE:
1. Verify the values of resistors using color coding. Check the proper working of FET.
2. Connect the circuit as per the circuit diagram given.
3. Adjust the supply voltage VDD = 20V.
4. Connect the Signal generator & Oscilloscope to the circuit.
5. Set the signal generator amplitude to 50 mV & observe the output it should be undistorted
6. Adjust the signal frequency in steps & measure the corresponding output voltage, keeping
the signal amplitude constant.
7. Measure the maximum value of input voltage for which there is no distortion in the input.
Note down the MSHC. Keep the frequency of the input signal at 1 KHz.
8. Temporarily disconnect the signal generator & connect 1 MΩ resistor in series with the
signal generator & the circuit input.
9. Now measure the Vin & Iin in the series circuit & find out the input impedance.

RESULT:
Parameters By Observation
Bandwidth
Input Impedance
MSHC

ANALYSIS: Comparison of theoretical and practical values.

POST EXPERIMENT QUESTION:
1. Compare BJT and FET amplifier circuit with respect to voltage gain, input impedance
and bandwidth.
2. Discuss the other two configurations of JFET amplifier circuits along with their
applications.

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Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 10

MOSFET Common Source Amplifiers

AIM:

1. To realize a Common Source MOSFET Amplifier.

2. To perform small-signal analysis and learn the basic parameters of a MOSFET ampli-
fier.
3. To simulate the circuit in PSPICE and verify the operation.

PRE-EXPERIMENT QUESTIONS:

1. Mention the region of operations for a MOSFET along with current expression repre-
senting it.
2. Draw symbolic representations of different types of MOSFETs.
3. Why common Source amplifier is most widely used?

EQUIPMENT/COMPONENT REQUIREMENTS:

Sr .No. Equipment Specification Quantity

1 CRO 20MHz 1
Regulated Power
3 0-30V 1
Supply
5 MOSFET 2N7000 1
750K,240K,10K,
6 Resistors As indicated in the
820,100,62
circuit.
7 Capacitors 47µf,4.7 µf
8 Bread Board - 1
Connecting wires &
9 - As many required
CRO Probes

THEORY:
Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, is an excellent
choice for small signal linear amplifiers as their input impedance is extremely high making
them easy to bias. But for a MOSFET to produce linear amplification, it has to operate in its
saturation region, and needs to be biased around a centrally fixed Q-point. The potential
divider biasing arrangement is provided by resistors R G1 and RG2.The coupling capacitors Ci
and Co block DC signal entry into the system thereby preventing any loading effect and
protecting Q point stability.
In an enhancement-mode MOSFET, the electrostatic field created by the application of a gate
voltage enhances the conductivity of the channel and threshold voltage is the minimum gate
bias required to enable the formation of the channel between the source and the drain. above

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Electronic Devices Lab (KEC-351)
this value the drain current increases in proportion to in the saturation region al-
lowing it to operate as an amplifier.
CIRCUIT DIAGRAM:

Figure 10.1 MOSFET common source amplifiers

PROCEDURE:

1. Connect the circuit as indicated in the figure 10.1.

2. Set input voltage of 500mV peak to peak in the function generator at 1 KHz and
observe the output on CRO across load resistor.
3. Then vary the input signal frequency from 100Hz to 10MHz and note the output
voltage value for each input signal frequency. ( minimum 10-15 readings)

4. Find the voltage gain in dB by formula …= __dB

5. Plot the gain Vs frequency plot on a semi log paper and find lower, upper cutoff
frequencies and bandwidth.

OBSERVATION TABLE: for input voltage as

Sr. No. Frequency (Hz) VO(V) Gain (dB)

1
2
3

CONCLUSION/RESULT: Compare gain computed by theory formula with the value

obtained. Tabulate lower, upper cut off frequencies and bandwidth obtained from graph.

Post Experiment Questions:

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Electronic Devices Lab (KEC-351)
Perform DC and AC analysis of the amplifier circuit estimating all DC nodal voltages and
derivation of gain formula to estimate theory value of gain.
1. Simulate the circuit using simulation software.
EXPERIMENT NO. 11

Simulation of Amplifier Circuit

AIM: To perform simulation of Amplifier circuits studied earlier using any available
simulation software and measurement of bandwidth and other parameters with the help of
simulation software. AC ANALYSIS (Frequency Vs Gain) for CE amplifier

PRE-EXPERIMENT QUESTIONS:
1. What is the importance of simulation software in electronic circuit design?
2. Name five different software tools along with their basic features used for electronic
circuit simulation.
3. Find out different profile settings that can be used for electronic circuit simulation?

REQUIREMENT EQUIPMENT/COMPONENTS:

Desktop Computer with up to 1GB RAM, up to 3GHz processor’s speed and Windows XP or
NT platform
SOFTWARE:
OrCAD 16.0 - OrCAD Capture CIS demo – By Cadence
CIRCUIT DIAGRAM:

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Electronic Devices Lab (KEC-351)

Figure 11.1 Circuit schematic of CE amplifier

SIMULATION RESULT:
BJT Amplifier for AC Sweep 1 KHz to 100MHz

G 100V
A
I
N

50V

0V
1.0KHz 3.0KHz 10KHz 30KHz 100KHz 300KHz 1.0MHz 3.0MHz 10MHz 30MHz 100MHz
V(RL:2)
FREQUENCY

Max Output Voltage - 90.79707 V

Cutoff_Lowpass_3dB- 13.91028M
Cutoff_Highpass_3dB 34.10052k

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Electronic Devices Lab (KEC-351)
Bandwidth_Bandpass_3dB -> B.W. = ( ) = 13.87618M

ANALYSIS:
1. Selecting a desired signal frequency from the frequency response curve observe the
input and output signal waveforms and comment.
2. Perform analysis to estimate nodal voltages and current values.

POST-EXPERIMENT QUESTIONS:
1. What is the value of voltage gain by formula and obtained through simulation?
Compare them and comment on the result.
2. Find out different tools that can be used for different levels of circuit design and
implementation. Name at least three such tools along with their usage level in VLSI
design.
3. Explore different types of simulation profile settings available in the simulation
software.

Department of Electronics and Communication Engineering 42

NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 12

Measurement of Operational Amplifier Parameters

AIM: Measurement of Operational Amplifier Parameters: Common Mode Gain,

Differential Mode Gain, CMRR, and Slew Rate.

PRE-EXPERIMENT QUESTIONS:
1.
2.
3.

EQUIPMENT/COMPONENTS REQUIREMENTS:

Sr. No. Name Specification Quantity

1
2
3
4

THEORY:

CIRCUIT DIAGRAM:

PROCEDURE:

V-I CHARACTERISTICS OF SOLAR CELL:

OBSERVATIONS:

RESULTS:

Department of Electronics and Communication Engineering 43

NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 13

Applications of Op-amp

AIM: Applications of Op-amp: Op-amp as summing amplifier, Difference amplifier,

Integrator and differentiator.

PRE-EXPERIMENT QUESTIONS:
1.
2.
3.

EQUIPMENT/COMPONENTS REQUIREMENTS:

Sr. No. Name Specification Quantity

1
2
3
4

THEORY:

CIRCUIT DIAGRAM:

PROCEDURE:

V-I CHARACTERISTICS OF SOLAR CELL:

OBSERVATIONS:

RESULTS:

Department of Electronics and Communication Engineering 44

NOIDA INSTITUTE OF ENGINEERING AND TECHNOLOGY
GREATER NOIDA
Electronic Devices Lab (KEC-351)
EXPERIMENT NO. 14

Study of Power Devices

AIM: Study of Power Devices: DIAC & TRIAC.

PRE-EXPERIMENT QUESTIONS:
1.
2.
3.

EQUIPMENT/COMPONENTS REQUIREMENTS:

Sr. No. Name Specification Quantity

1
2
3
4

THEORY:

CIRCUIT DIAGRAM:

PROCEDURE:

V-I CHARACTERISTICS OF SOLAR CELL:

OBSERVATIONS:

RESULTS:

Department of Electronics and Communication Engineering 45