GATE Electronics Engineering (Previous Years Solved Papers 1987-1994) Electromagnetios .....nnnnennm Network Theory .. Control Systems ..nnnsnnernnn Electronic Devices and Circuits Analog Circuits Digital Circuits and Computer Organization Signals and Systems ..... Communication Systems... Engineering Mathematics .....n EASY Sora 23 34 43 55 163 wT 182.UNIT CONTENTS 1. Basics of Network Analysis 3 2. Sinusoidal Steady State 4 3. Network Theorems 5 4, Transient Analysis. 5 5. TwoPortNetworks 6 6. Graph Theory and State Equations 6 7. Network Functions 7Pet crue 1.1 Asquare waveform as shown in figure is applied across 1 mH ideal inductor. The current through the inductor is a wave of peak amplitude, vi 1 ay fos iarsec) at fees [1987 : 2 Marks] 1.2 Of the networks, Ny, Nj, Ny and N, of figure, the networks having identical driving point function are 2H 10 OR AW 2a 1 o—+— 41 tr %, —_4 2H 1a M% 1H ot tf Ms 4 10 2H WM T5 e+ te 1F Ne 1.3 1.4 15 Network Theory (@) Nand N, (©) Nand Ny, (b) Nand Ni, (d) N, and Ni, [1992 : 2 Marks] network contains linear resistors and ideal votage sources. If values of all the resistors are doubled hen the voltage across each resistor is (@) halved (b) doubled (©) increased by four times (d) notchanged [1993 : 2 Marks] The two electrical subnetworks N, and N, are connected through three resistors as shown in Fig he voltages across § ohm resistor and 1 ohm resistor are given to be 10 V and 5 V, respectively. Then voltage across 15 ohm resistor is. +t0v- 5n aww 10 NM Np 10 | +5 (a) - 105 (b) + 105 (c) -15V (d) + 15V [1993 : 2 Marks] Ade circuit shown in figure has a voltage source V, a current source / and several resistors. A particular resistor Rdissipates a power of 4 Watts when V alone is active. The same resistor R dissipates a power of 9 Watts when J alone is a) 1w SG] wer [Re (© 13 [Al (a) 25W [1998 : 1 Mark]4) GATE Previous Years Solved Papers: Z@ | MADE EASY Perera in fig. 2. The operating frequency ofthe circuits Ve ¥ 2.1 Thevalue ofcurtenttirough the 1 Feraci capactor oa — RR of figure is . v % geo = Feat osrxG ¥ (a) zero (b) one (c) two (d) three [1987 : 2 Marks] . Ue Powe 2.2. The halt- power bandwidth of the resonant circuit (2) equaltothe resonance frequency of figure can be increased by: (b) less than the resonance frequency, (0) greater than the resonance frequency ke (@) not zero [1992 : 2 Marks} © 2.6 In the series circuit shown in figure, for series L resonance, te value ofthe coupling coetfcientk willbe (a) increasing R, (b) decreasing R, « (@)meveasrgR, (6) decreasing wattage tate [1989 : 2 Marks] Wo ja (28/80 2.3. The resonant frequency ofthe series circuit shown (@) 025 wos in figure is 0089 oto M=tH [1993 : 1 Mark] Ko \ 27 infu, Ay, A, and A, are eal ammetrs. MA, : : reads 5A, A, reads 12 A, then A, should read on er FR @ pate 2H Ooms a= z = 4nv3 an @ c | ig 1h oN z © BJO © aa [1990 : 2 Marks] 100 Fin ot @7A (b) 124 2.4 Ina sories RLC high Qcirout, the current peaks (13a fo) 178 ata frequency [1993 : 2 Marks] (@) equalto the resonant frequency , {b) greater than the resonant frequency 2.8 A series LCR circuit consisting of R= 10 & (©) less than the resonant frequency IX; = 20.@ and IX, = 20 Q is connected across (@) nono of the above is trus an a.c. supply of 200 V rms, The rms voltage [1901 «2 Marks] across the capacitors (@) 2002-90°V (pb) 2002+ 90° 2.8 For tho sories FeL-C circuit of fig. 1, the partial phasor diagram at a certain frequency is a shown () 4002490°V (a) 400 2-90" [1994 : 1 Mark]Network Theory [5 34 3.2 33 34 Wan impedance Z, is connected across a voltage source V with source impedance Z,, then for maximum power ansfer the load impedance must be equal to (@) source impedance Z, (b) complex conjugate of 2, (6) real part of Z, (@) imaginary partof Z, [1988 : 2 Marks} Inthe circuit of figure, the power dissipated in the resistor Ris 1 W when only source ‘1’ is present and ‘2’ is replaced by a short, The power dissipated in the same resistor Ris 4 W when only source '2'is present and ‘1'is replaced by a short. When both the sources ‘1’ and '2' are present, the power dissipated in R will be ta 2a 4 oe Me + i soyce Zn=ta sauce @) @sw aw (co) 4W (d) Sw [1989 : 2 Marks] Aload, Z, = R, + /X; is to be matched, using an ideal transformer, to a generator of internal impedance, Z,= A+ /X,. The turns ratio of the transformer required is (@) ViA./ 2s (b) YRLI Rs (©) VRi/Ze (d) 2.7 Rel [1989 : 2 Marks] If the secondary winding of the ideal transformer shown in the circuit of figure has 40 turns, the numberof tumsin the primary winding for maximum power transfer to the 2 @ resistor will be Ideal 8a “4 ‘ransformer (b) 40 (d) 160 [1993 : 1 Mark] 35 3.6 In the circuit of figure, when switch S, is closed, the ideal ammeter M, reads 5 A. What will the ideal voltmeter M, read when S, is kept open? (The value of E's not specified). [1993 : 2 Marks] A generator of internal impedance, Z,, delivers maximum power to a load impedance, Z,, only if Zz, [1994 : 1 Mark] Perera r uri 44 42 43 A 10 @ resistor, a 1 H inductor and 7 HF capacitor are connected in parallel. The combination is driven by a unit step current. Under the steady state condition, the source current flows through (2) theresistor (6) the inductor (©) the capacitor only (@) allthe three elements [1989 : 2 Marks] If the Laplace transform of the voltage across a capacitor of value of FF is set Vs) = 81 See aset the value of the current {20's (OA (©) (2) rough the capacitor at (b) 2A (1A [1989 For the compensated attenuator of figure, the impulse response under the condition RAC, = R,C, is Marks]6| GATE Previous Years Solved Papers: E@_| MADE EASY (a) oF 8(t) © ut) O Ree [1992 : 2 Marks} 4.4 Aramp voltage, vf) = 100 Volts, is applied to an RC differentiating circuit with R = 5 kK and C= 4uF. The maximum output voltage is (@) 0.2 volt (b) 2.0 volts (©) 10.0 volts (a) 50.0 volts [1994 : 1 Mark] Sela 5.1 Two two-port networks are connected in parallel The combinationis to be represented as a single two-port network. The parameters of this network are obtained by addition of the individual (a) zparameters (b) hparameters (c) yparameters (@) ABCD parameters [1988 : 2 Marks] 5.2. For the transfer function of a physical two-port network: {@) allthe zeros must lie only in the left haif of the splane (b) the poles may lie anywhere in the s-plane (¢) the poles lying on the imaginary axis must be simple (a) a pole may le at origin [1989 : 2 Marks] 5.3. The condition AD- BC = 1 for a two-port network implies that the network is a: (@) reciprocal network (b) lumped element network (6) lossless network (A) unilateral element network [1989 5.4. The open circuitimpedance matrix ofthe two port network shown in figure is Marks] A 22 L +o Wy} % ge Daw van - @ [S 3] ) [3 3 © [; 4] @ [2 al [1990 : 2 Marks] 5.5. TwoTwo-port networks ate connected in cascade The combination is to the represented as a single two-port network. The parameters of the network are obtained by multiplying the individual (@) zparameter matrices (0) parameter matrices (6) yparameter matrices (0) ABCD parameter matrices [1991 : 2 Marks] 5.6 Fora 2-port network to be reciprocal, Marks] 5.7. The condition, that a 2-port network is reciprocal can be expressed in terms ofits ABCD parameters as [1994 : 1 Mark] iraph Theory and State Equa 6.1 Relative to a given fixed tree of a network, (@) Link currents form an independent set (©) Branch currents form an independent set (©) Link voltages form an independent set (d) Branch voltages form an independent. [1992 : 2 Marks]Network Theory \7 Pare ata 7 A driving point admittance function has pole and zero locations as shown below. The range of s for which the function can be realized using passive elements is (ao<-1 (oct (by o>d (d) o>-1 [1988 : 2 Marks] [EEE Network theory (05) 12 (©) 1.3 (a) 14 ©) 24 (a) 2.5 (b) 26 @ 33 (@) 3.4 (0) 3.5 5.2 TA 1. Basics of Network Analysis Hos Triangular wave, 0.5 Amp peak i= }fvat So, the currentthrough inductors the integration of the applied votage across the inductor. Integration of square wave sa tiangular wave. So, the current though the inductor is atrangular wave = u(t) 2u(t- 0) + 2ult1) + ) = 1) ~2r(t- 0.5) + Art 1) + 7.2 73 @) @ ©) (c&d) (b) rE The necessary and sufficient condtion for a rational function of s, T(s)to be a driving pointimpedance of an RC networkis that all poles and zeros should be (a) Simple and lie on the negative real axis of the splane (b) Complex and lie in the left half of the s-plane (6) Complex and le in the right half of the s-plane (d) Simple and lie on the positive real axis of the splane [199° Indicate True/False and give reason (For the following question) Marks] Z(s) = = represents the inputimpedance of e+ anetwork. [1994 : 2 Marks] 15 () 21 (a) 2.2 (a)a(d) 27 (0) 28 (3.1 (o) 36 Sol 4.1 (0) 4.2 (0) 53 (@) 54 (a) 5.5 (a) 72 (a) 7.3 (False) 10) oshey OS 115 225 3 tasec) 1,=05A @ Ni: Ye) = s+ WWI) = S45 Ys) 2st + 2541 2s+8| GATE Previous Years Solved Papers: E@_| MADE EASY Ny wt 2s? + 2s. yo) = SS Ng le gat 1 HAS) S565 So, N, and Nj networks having identical driving re ae Current through § @ resistor, i= Be2am Current through 1 @ resistor, So, the current through 15 @ resistor, ing = (iy + i) = 15 + 2) = -7 Amp. Voltage across 15 resistor. Vig = 15liyg) = 15(-7) = 105 V (a) From superposition theorem P= (JP + JP) = (0/4 + v8)" Pa (243)=25W Paes ees Ee he given circuit is a bridge, Product of opposite arms are equal, (2)_ 2) (3) - {3} Urs 3) So, he curentthrough the diagonal element (1 F capacitor) is zero (a) &(d) Selectivity « Q f, 4 o= ew. | oO Bw 1 1 Bie + BW.« —1_ a selectivity R30 and R, >= then the circuit will have only L & elements and has high selectivity. So, the half power bandwidth can be increased by reducing the selectivity So, by increasing the series resistance R, and decreasing the parallel resistance R,, the half power bandwidth can be increased. aw Lag = Ly + L-2M t= 242-2 (1)=2H Atresonance =X ola = 56 1 w= Tae , o= eS redisee Bae 2 1 ont= 3MIDE EASY | _NetworkTheory Ew At resonance frequency (b) Given network is the series R-L-C circuit in resistor R, voltage V, and current J, is in phase and in series circuit currents sam in all the elements T= Iq So, the currents leading the voltage in the circuit. So, the given circuit will behave as capacitive circuit Va> Vy X> 1% > % aprot were < oP Ege At resonance X= Xo X= Xi, +X, + 2k (XX, [2+ [8+ 2k jap = 2 2kjd = j2 = 025 (12)? Amp. Ede X=% So, the circuit is at resonance. 1- Y= 70 _ 20 amp. R10 Voltage across the capacitor V, = (-iX,) = 20-20) = 4002-90°V EE According to maximum power transfer theorem, 4-4 Ee P=1W aw Since the polarity of both the sources are different P= (WR -VPaP P= (Vi-V4) =(1-27 = 1 ~j400 Ee 6) Across swi [= 5A Ry = [(4]6+2]8)+3+2])10+5 (244164343)I 1045 =10110+5=5+5 Ry = 109 Vas = loo10 | GATE Previous Years Solved Papers : |_ MADE EASY me Al steady state Inductor behave as short circuit. So, under steady state condition the source current lows through the inductor me 12 249) = Eo ie) = 2.84) __ toed 9 249)" Se Fes AS =H ead 5 19) = Fray ¢ #(0") = lim sfe(s) = im xe = 1am ~ 250 2” P ca) 249-265. Als) = + eGs+t ord + zo = GS (= 71 Reset Gs Mls) _ _Z,(s)_ Wis) © Zls)+Za(8) RC, = RC, &, Ys) _ Gs R, vis) RR, R,Gs+1" R,C,e+i R, (9 - ey v,(s) Rak VAs) For impulse response. V,(s) = 1 vt) = 50 1) = —Pe. vt) = BAe 80 2) carers) = (5x 10") (4x10 1 (00) Raa Lcd Em EE oe The poles lying on the imaginary axis must be simple. A pole may lie at origin, Y}=(Y],+ (Ye 53 [0 For reciprocal network, AD-BC=1 Hae Alneo ~61,+V,_ 61-21, i 1 Z,=-8 Ea ABCD parameter matrices, (3 B) [2 alle 3) c 0} *|c a}le d} [ss [OE) You = VieMIDE EASY | _NetworkTheory ) AD- BC me o-1>0 o> @ (False) For Z(s) to represent the input impedance of a passive network, the numerator and denominator degrees should not differ by more than 1 5 44 So, Z(s) can not represent the input impedance of a network (False)UNIT II CONTENTS 1. Basics of Electromagnetics 13 2. Uniform Plane Waves 14 3. Transmission Lines 15 4, Waveguides 15 5. Antennas 16un / Pret an 14 12 13 14 An electrostatic field is said to be conservative when: (@) The divergence of the field is equal to zero (b) The curl of the field is equal to zero IE (©) The curl of the field is equal to <> ar (1987 : 2 Marks] (d) The Laplacian of the field is equal to he On either side of a charge - free interface between twomedia (@) the normal components of the electric field are equal (©) the tangential component of the electric field are equal (©) the normal components of the electric flux density are equal (d) the tangential components of the electric ux density are equal [1988 : 2 Marks] Vector potential is @ vector (@)_ whose curl is equalto the magnetic flux density (b) whose curlis equal tothe electric field intensity (©) whose divergence is equal to the electric potential (d) which is equal to the vector product Ex H [1988 : 2 Marks] The electric field strength at a far- off point Pdue to a point charge, +q located al the origin, Ois 100 milivolis/metre. The point charge is now enclosed by a perfectly conducting hollow metal sphere with its centre atthe origin, O. The electric field strength at the point, P (@) remains unchanged in its magnitude and direction (b) remains unchanged in its magnitude but reverse in direction Electromagnetics 15 1.6 17 18 (6) would be that due to a dipole formed by the charge, +g, at O and -qinduced (@) would be zero [1989 : 2 Marks] Which of the following field equations indicate that he free magnetic charge do not exist GelyyA IdixR (@) AalvxA — (b) A= av ° San? (©) V-H=0 () wxH=J [1990 : 2 Marks] Given V=xcos? yi +x°e%}+zsin® yk and S he surface of unit cube with one comer at the origin and edges parallel to the coordinate avis, he value ofthe integral ff,.V.Aas is [1993 : 2 Marks] For a uniformly charged sphere of radius Rand charge density p, the ratio of magnitude of electric fields at distances A/2 and 28 from the centre Elr= F/2) , r= 2A) is [1993 : 2 Marks] Match List-! with List-ll and select the correct answer using the code given below the Lists: List-1 List-I1 A vxHad 1. Continuity equation aB. Ed1=-f°2B.S 2, Faradaysta B. § Sot 2. Faradays Law ap co. v2 3. Ampere'sLi 4, Gauss’s Law 5. Biot-Savart Law14) GATE Previous Years Solved Paper: |_ MADE EASY Codes: A B Cc @ 3 2 4 ) 2 1 8 @ 4 3 4 @ 1 2 3 [1994 : 2 Marks] 24 2.2 2.3 24 For an electromagnetic wave incident from one medium to a second medium, total reflection takes place when (@) The angle of incidence is equal to the Brewster angle with E field perpendicular to the plane of incidence (b) The angle of incidence is equal to the Brewster angle with E field parallel to the plane of incidence (6) The angle of incidence is equal tothe critical angle with the wave moving from the denser meditim to a rarer medium (@) The angle of incidence is equal tothe critical angle with the wave moving from a rarer medium to a denser medium [1987 : 2 Marks] Ina good conductor the phase relation between the tangential components of electric field E, and the magnetic field H,is as follows (@) E,and H,are in phase (0) E,and H,are out of phase (©) Hileads E,by 90° (d) Ejleads H,by 45° [1988 : 2 Marks] The skin depth of copper at a frequency of 3 GHz is 1 micron (10-° metre). At 12 GHz, for a non magnetic conductor whose conductivity is 1/9 times that of copper, the skin depth would be (@) JSx4 microns (b) BTA microns (©) Ja78 microns (a) 1y JOA microns [1989 : 2 Marks] The incoming solar radiation at a place on the surface of the earth is 1.2 kWim?. The amplitude of the electric field corresponding to this incident power is nearly equal to (@) 20mvim (b) 2.5 Vim (©) 30v/m (@) 950Vim [1990 : 2 Marks] 25 26 27 28 The electric field component of a uniform plane electromagnetic wave propagating In the ¥-ditection in a lossiess medium will satisfy the equation aE, ay vE, (a) © [1991 : 2 Marks] ‘A material is described by the following electrical parameters ata frequency of 10 GHz:6= 10®mhoim, H=Hyande/eg= 10. The material at this frequency is 4 to considered to be (€9= ——% 10 Fim) 36n (@) agood conductor (6) agood dielectric (©) neither a good conductor, nora good dielectric (d) agood magnetic material [1993 : 2 Marks] A plane wave is incident ‘ormally on a perfect conductor as shown in figure. Here Ef, Hand # are electric field, magnetic field and Poynting vector, respectively, for the incident wave. The reflected waver should have x e. > z 7 (b) Hy @ B-E [1993 : 2 Marks] A long solenoid of radius R, and having N turns per unit length carties a time dependent current 0) =1,008 (w!). The magnitude of induced electric field ata distance Ri2 radially from the axis of the solenoid isElectromagnetics 2.9 2.10 34 3.2 3.3 R @ FH, Niwsin (op R (b) Fu,N i cos (wt) R © FH. Niwsin (op (@) Ry, Nisin (of [1993 : 2 Marks] fA di=f__as [1994 : 1 Mark] c 5 Aplane electromagnetic wave traveling along the +z:direction, has its electric field given by E,= 2008 (ot) and E, = 2cos(wt+90)° he wave is (@) linearly polarized (b) right circularly polarized (6) lettcircularly polarized (@) oliptically polarized [1994 : 1 Mari] oy A transmission line of real characteristic impedance is terminated with an unknown load. The measured value of VSWR on the line is equal to 2 and a voltage minimum point is found to be atthe load, The load impedance is then (a) Complex (b) Purely capactive (©) Purely resistive (a) Purely inductive (1987 : 2 Marks} A Two-wire transmission line of characteristic impedance Z, is connected to a load of impedance ZZ, # Z,). Impedance matching cannot be achieved with (@) a quarter - wavelength transformer (0) ahalf-wavolongth transformer (©) anopen- circuited parallel stub (A) a short-circuited parallel stub [1988 : 2 Marks] A 50 ohm lossless transmission line has a pure reactance of (j 190) ohms as its load. The VSWR in the line is 34 35 3.6 37 3.8 @) 12 (Halt (©) 4(Fou) (©) 2 (Two) (A) © (latinity) [1989 : 2 Marks] The inputimpedance of a short circuited lossless transmission line quarter wave long is (@) purely reactive (©) purely resistive (©) infinite (a) dependent on the characteristic impedance of the line [1991 : 2 Marks] A transmission line impedance is areal (@) must be a lossless line (©) must be a distortiontess line (©) may not be a lossless line (a) may not be a distortionless line [1992 : 2 Marks} whose characteristic Consider a transmission line of characteristic impedance! end by (4/50) ohm. The VSWR produced by itin the transmission line will be (a) +1 (b) 0 (c) = (d) +) [1993 : 2 Marks] ohm. Let it be terminated at one A load impedance, (200 + j0) Qs to be matched to a 60 @ lossless transmission line by using a quarter wave line transformer (QWT). The characteristic impedance of the QWTrequired is [1994 : 1 Mark] If a pure resistance load, when connected to a lossless 75 ohm ine, produces a VSWR of 3 on the line, then the load impedance can only be 25 ohms. True/False (Give Reason) [1994 : 2 Marks] 4d The cut off frequency of a waveguide depends upon (a) The dimensions of waveguide (b) The dielectric property of the medium in the waveguide16 | GATE Pre us Years Solved Papers |_ MADE EASY 42 43 44 (©). The characteristic impedance of the waveguide (d) The transverse and axial components of the fields [1987 : 2 Marks] For a normal mode EM wave propagating in a hollow rectangular wave guide (@) the phase velocity is greater than the group velocity (b) the phase velocity is greater than velocity of ight in free space. (c) the phase velocity is less than the velocity of ight n free space. (@) the phase velocity may be either greater than cor less than the group velocity. [1988 : 2 Marks] Choose the correct statements For a wave propagating in an air filed rectangular waveguide (@) Guided wavelengthis never less than the free space wavelength (b) Wave impedance is never less than the free space impedance. (©) Phase velocity is never less than the free space velocity, (d) TEM mode is possible if the dimensions of the wave guide are properly chosen [1990 : 2 Marks] Tho morro « 2eme22em rotanava waveguide is completely filed with a dielectric of €, = 4. Waves of free space wave lengths shorter than... can be propagated in the TE,, mode, [1994 : 1 Mark] 54 The electtic field Eand the magnetic field Hof a short dipole antenna satisfy the condition (@) the rcomponent of Eis equal to zero (b) both rand @ components of H are equal to zer0 (6) the @ component of E dominates the r component in the far - field region (A) the @ and 6 components of Hare of the same Corder of magnitude in the near field region [1988 : 2 Marks] 5.2 5.3 5.4 5.5 Two isotropic antennas are separated by a distance of two wavelengths. If both the antennas are fed with currents of equal phase and magnitude, the number of lobes in the radiation pattem in the horizontal plane are (a 2 (4 (©) 6 8 [1990 : 2 Marks] In a broad side array of 20 isotropic radiators, equally spaced at distance of 4/2, the beam wiaith between first nulls is (a) 51.3degrees (0) 22.9degrees (b) 11.46 degrees (a) 102.6 degrees [1991 : 2 Marks] Two dissimitar antennas having their maximum directivities equal, which of the following statements are right? (@) must have their beam widths also equal (©) cannot have their beam wicths equal because they are dissimilar antenna (c) may not necessarily have their maximum power gains equal (a) must have their effective aperture areas (capture areas) also equal [1992 : 2 Marks] The beamwidth between firstruils of auniform linear array of Nequally spaced (element spacing = equally excited antennas, is determine by (@) Nalone and not by d (b) dalone and not by N (©) the ratio, (Nd) (d) the product, (Na) [1992 : 2 Marks] wave dipole antenna, which of the following statements are right? (@) the radiation intensity is maximum along the normal to the dipole axis (b) the current distribution along its length is uniform irrespective of the length (0) the effective length equals its physical length (d) the input impedance is independent of the location of the feed-point [1994 : 1 Mark]MADE EASY | Electromagnetics | 1.7 [REIS electromagnetics 1.1 (b) 1.2 (b&c) 1.3 (a) 1.4 [a) 1.5 (c) 1.60 (1) 1.7 (2) 1.8 (a) 21 (c) 2.2 (d) 2.3 (b) 24 (d) 25 (c&d) 26 (a) 27 (a&c) 28 (c) 2.9 (sol) 2.10 (c) 3.1 (c) 3.2 (b) 3.3 (d) 3.4 (c) 3.5 (b&c) 3.6 (c) 3.7 (100) 3.8 (False) 4.1 (ab) 4.2 (a&b) 43 (a&c) 44 (8) 5.1 (b,c) 5.2 (a) 5.3 (b) 5.4 (ac) 55 (d) 5.6 (a) FEEEEEIEEY electromagnetics Pera err ny me An electrostatic field is said to be conservative when the closed line integral of the field is zero. §é-d =o Stoke's theorem §E-a = fovxé)-a So, vxE =0 12 (OE) Boundary conditions: &;, = Ee Vector potential in magnetic fields is the measure of work done to move a current element Id w A= Idi Itrelates to B (which is force experienced by a currentelement) as vx A= 8, vxA = =H me The radially outward field is normal to conductor and no induction effects Eis same. Ho Magnetic field lines are closed around the current and have no sources or sink points. Gpe-ds = {Jv-80v v-B=0 Inary closed sutace Entering thx = Leaving fux Dipole isthe cause of magnetic fields Magnetic monopoles or ree charges do nt exist is usiied by V- B= 0 According tothe Gauss’ aw fr magni fels §8-& -0 v8 =0 vuli = 0 wef =0 vi =0 Gpv-& = fIfiw-Yav V.V = costy+ sinty=1 JYav =1 mae put p= Pf rer o-m aie =o oR 3 Applying Gauss law with spherical Gaussian surface concentric with the charge. R Brat r= Ara) = 2818 | GATE Previous Years Solved Papers: H@_| MADE EASY o, aR) = TS Flat r= Ri2) Se. lat r= 2A) ae (A) -3,(B)-2,(C)-1 vx = J Ampere's law Bz : ea Li ds Faraday's law gj = 2 -coniniy equation For total internal reflection, 0,28, BL [he 3 Veo, Given that, 8 = I micron 1,= 3GHz ot 12GHe Set i o 93 &_ &, -£ 1 > Via" 4 Va ,- 2 = microns Rava Ea P= 1.2 kWim? = 1200 Wim? E = J2x(120n)x (1200) E = 960 Vim EB cea When Eis a function of yand directed in x and z possibly orthogonal to propagation. E, o For total internal reflection to take place, the wave ve. : should move from a denser medium to a rarer Te eX Ee medium and the angle of incidence should be ay’ ar greater than or equal to the critical angle. Ew 11= intrinsic impedance &_ {jou TH Vet joc For a good conductor o> >0e Efi fi. fia. fou So, E, leads H, by an angle of 45°. (b) We know that: For a good conductor, Skin depth ae HO Hee He Ege Ss 2 _ We 2x(10x10%) (6.854% 10" x10) E 1.798 x 105 >> 1 we So, the given material at f= 10 GHz is considered as a good conductor Ba exo Reflection coefficient for electric fields oH _ 120% r= Ve 2H 5 1200 + for conductorsMADE EASY | Electromagnetics | 19 As on ~0 with obeing large when E reflection completely out of phase Hreflects in phase El = -6 =H ni(t) Total number of turns T He NI(t) B = ufH)=H NI B = NI, cosa!) According to Maxwell's equation, = _ a8 = fed = Ser ds E an = uNtgosin(a) R = By ,ntosinton & = Fu,Nigesiniot EEE Using Stoke's theorem §Adl = [vx Aas gs Bw wo equal E field components out of phase by E, = 2cos(wt + 90°) = -2sinwt Lett circular for +2 propagation. Pa atload. tage minimum (V9) Point If Ving OF Vinge OCCUFS at the load for a lossless transmission line then load impedance Z, is purely resistive If Z, (resistive) > Z,, voltage maxima occurs at the load If Z, (resistive) < Z,, voltage minima occurs at the load Ew 22 length transmission line has Z, = Z, and hence cannot be a impedance matching device. (a) Z-% Reflection cosficient =1'= 7-57" 100-50 = 100 +50 p| = vitooF +60 _, (100)? + (60? 14/0 VSWR = 1-[F) Ea For a quarter wave transformer (W/4), ccs n= Z Z=0 4% q= Ben n= 135 (CEE) For a distortionless line, a= VAG B= wVlC ae mnfE coo20 | GATE Previous Years Solved Papers: | MADE EASY For a lossless line, R=0 G=0 a=0 B= wie Evy Z, is real means either lossless or distortionless and lossiess lines also satisfies LG = AC which means they are dist Ee Reflection coefficient less. {50-50 _ -60+ j50 T= 50450 60+ /50 r| = ¥60P +50" _, (50)? + (50) vswa = Ml) 141_2_ er) EE (100) For quarter wave line transformer, B= 22. Z = (60)(200) Z,= 1009 EER alse) For a pure resistive load of a lossiess line wr = Be VSWR= Re if A> Fy Ry VSWR= Rr if Re> A, Given that, VSWR = 3 So, R, = VSWR xR, =3 x 75 = 2259 Be» vo [om (= ~2nWa} *le) Where, = Eo ' co fim)? | (om? <- rexe tha) Va) So, f, depends on ‘a’ and ‘b’ (dimensions of waveguide) So, f, depends upon the dielectric property of the medium in the waveguide Ee ex) vy > > VyMADE EASY | Electromagnetics ae 1 je Ihoeoe, ety aoe ver ya Sxto® Ve = 1.510% msec m=n=4 (zy a) 15x10 [ 3)? (4)? = (3 5 (3) x10? 2 75x10" 55 = 1.875% 10H 20 . YL ASx10 og om, & > Tarexi0® So, waves of free space wavelength shorter than 8 cm canbe propagated a, = 80m Bw Every dipole antenna has fields in directions ofr, 0, @with E,, E,, Hy, These fields depend on 1/r, 1/1? and t/r? with distance {rterms are called as radiation fields and exist even at far away distance E, and Ho have 1 terms each depending on 1/r. IP? and 1/7 terms are called as induction fields and exist at closer distances with zero values far away. E,has only t/r? and 1/r3 terms. Option (a)-wrong-E, exists. Option (b)-right-E, only exists. Option (¢)-rightE, has /r terms which &, does not have Option (d)-wrong-H, does not exist. Ee Given that: d= 24 and a = 0 y= 0+ Bd coso When w = 0, 2n, -2n, 4, 4m maxima occurs in that direction. nn On Maximum at @ = 0,3 2 Pi So, number of, loboct inthe radiation horizontal plane = 8. Ee sin(Ny/2) ° sin(y/2) attorn in the For null points sinfN v) ay with “3 3 [#0 (denominator term) N a+ Bdcoso = 478 N With a = 0 for broadside array. 28 eoge = S08 a2 N an 30 = cose = 4? with n= 1 for 1* null points 4 COS yp, = het = 35 oy = 78.46 with n= 2 for 2°4 null points 080, = e0 Beam wieth between first nulls = 12.04° Bee an, an Directviy = “Fa, = tivity = Q, = Beam solid angle A, = Capture area Power gain depends on efficiency and losses, so they may not be equal is right. Capture areas depend on gain and frequency also,22 | GATE Pre us Years Solved Papers: | MADE EASY @ Ege * Dipole antenna has radiation depending as NM Beam with depend on he ara ator when = 2a forminima conciton ‘Sng and maximum at 20° to array axis, + Bacose = y= ‘© Current distribution is uniform only for very short N lengths like hertzian dipole Ann at coop = HLS Aime . 2 terre apole «for equally excited 5 + 2, forany wie antenna cepends on loading effects or equally excited (in phase} from either sides of the feed points or length on cos0 = 1 either sides. Na WEN in both arays is determined by the product (NedBasics of Control Systems, Block Diagram and SFG’s 24 Compensators and Controllers 24 Time Response Analysis 25 Stability Analysis 25 Root Locus 26 Frequency Response Analysis 28 State Space Analysis 28Hl / rere Block Diagram and SFG's 4.1 In the signal flow graph shown in figure X, = TX, where T, is equal to % (@ 25 () 6 (0) 55 (a) 10 [1987 : 2 Marks] 1.2. For the system sh nn figure the transfer function ® s+8+10 ©) +1ts+10 © © Zresvt0 [1987 : 2 Marks] 1.3. The C/R for the signal flow graph in figure is: 4 & % 6 Wa SF Oy 66.66 © WEE)I+EE) ©) SE.G,6, (4G, + Gy + GG) (14 Gy +B, + GG.) Control Systems GGG, © (FG 46)0+G +6) 6G,G,6, ( (+G,+6,+G,+G,) [198s 1.4 Inthe signal fiow graph of figure the gain c/rwillbe Marks] (b) 22/15 (a) aaie3 [1991 : 2 Marks] Compensators and Controllers 2.1. The transfer function of a simple RC network functioning as a controller is: s+z, S+Py The condition for he ACnetwork to act as a phase lead controler is () p,<2, (©) p,=2, Gls)= (b) p,=0 (a) p> [1990 : 2 Marks] Kersto s+t is controlled by a PID controller. For this process. (@) the integral mode improves transient performance (b) the integral mode improves steady-state performance (0) the derivative mode improve transient performance (d) the derivative mode improves steady-state performance, 2.2. Aprocess with open-loop model G(s) = [199: Marks]MADE EASY | Control systems | 25 2.3 Tachometer feedback in a d.c. position control system enhances stability (T/F) [1994 : 1 Mark] Eau 3.1 The unity feedback system shown in fig, has K Re) HE 1) co) (@) Zero steady state position error (b) Zero steady state velocity error K (6) Steady state position error +7 units K (@) Steady state velocity error +5 units [1987 : 2 Marks] 8.2. The steady state error of a stable ‘type 0 unity feedback system for a unit step function is (ao ©) @e« @ [1990 : 2 Marks] 3.3. A second-order system has a transfer function 25 s+ 85425 If the system, initially at rest, is subjected to a Unit step input at t = 0, the second peak in the response will occur at (@) nsec (©) 2ni8 soe given by G(s) = (0) ni3sec (A) nl2 sec. [1991 : 2 Marks] 3.4. A.unity-feedback control system has the open- {t+ 2s) S(s+2) tothe system is aunitramp, the steady-state error will be @o (©) 05 @2 (a) Infinity [1991 loop transfer function G(s) = ifthe input 2 Marks] 3.5 The poles of a continuous time oscillator are [1994 : 1 Mark] 3.6 The response of an LCR circuit toa step inputis (a) Over damped (b) Critically damped (€) Oseilatory Ifthe transfer function has (1) poles on the negative real axis (2) poles on the imaginary axis (3) multiple poles on the positive real axis, (4) poles on the positive real axis (6) Multiple poles on the negative real axis. [1994 : 2 Marks] 3.7. Match the following codes with List-| with List: List- (@) Very low response at very high frequencies (©) Over shoot (©) Synchro-control List (1) Low pass systems (2) Velocity damping (3) Natural requeney (4) Phase-sensitive modulation (6) Damping rato. transformer output [1994 : 2 Marks] pre urd 4.1. Consider a characteristic equation given by st 438+ 532 +6s+K+ 10 The condition for stability is (a) K>5 (6) (9) K>-4 @) 10 te (b) 3 0 is a scalar variable parameter. In the root-locus diagram of the system the asymptotes of the root-loci for large values of K meet ata pointin the s-plane, whose coordinates are @) (-3,0) (6) (1,0) (b) (-2, 0) (d) (2,0) [1991 : 2 Marks] Given a unity feedback system with open-loop transfer function, K SI esq Gera) The root locus plot of the system is of the form. 5.6 jo (a) eee jo (©) jo C) jo (6) ~2. (*] (i ro af ¥o (@) The system is completely controllable (b) The system is not completely controllable (c) The system is completely observable (A) The system is not completely observable [1992 : 2 Marks]Control Systems | 28 [XEN controt systems 14 34 44 5.3 6.4 () (a) (d) @ (sol.) 1.2 3.2 42 5.4 65 ) (b), (d) (b) © 13 3.3 43 55 6.6 EEEEEG Ene Control systems 1. Ba ss) Rs) © @) ) @ (10) UES cue Cr Ue 14 _ serri0s * ae) 108 as) _ As) @ By using Masson's gain formulae FA c nlo 2 2 R F 4118410 ~ T4G4G, +, + 10 70 10 GGG, ~ 7-G,=G, -G,-G, +[G.6, +46, +6,6, +6,G,] GG.G,G, GG.G6,6, ¥s+108+10 G,+GG, 1G,G, +G,G, +G,G, (14+ G, + G) (1+ G + G,) 14 3.4 4A 5.6 TA (@) @) (c) () Sol. 21 (d) 22 (bc) 23° (True) 35 (sol) 3.6 (501) 3.7 (sol) 45 (False) 5.1 (@) 5.2 (a) 6.1 (0) 62 (©) 63 7.2 (0) 7.3 (b,c) aw By using Masson's gain formulae, EP Ax A (1x2x3x4x D+ (1x5x x (143) 24420 _ 44 1448 23 ald BIO VIO eee ker Bm For phase lead controller o>0 “ta tl >o (be) he integral mode improves steady state performance and the derivative mode improves the transient performance (True) The tachometer feedback is a derivative feedback So, tachometer adds zero at origin Hence, type decreases and stability is improved (True),30 | GATE Previous Years Solved Papers: E@_| MADE EASY Ee kK - = lim =e = IMAI) = I 5510) AL AL i#K, it= Ea» The steady state ertor of a stable type 0" unity feedback system fora unitstep function is + = 25 8 a4 bu, 5 °° og = Opt = 5Y1- (0.8)? =3 For 2 peak n= 3 he fm Sm asec, og 3 Ea s4(1+ 2s) lim s@(s) es) = INGSAIHS) = Ir 26+ 2) = lim Mit 2s) = I} se+2) ALA = Kw EEE so. The poles of a continuous time oscillator are pure imaginary. EGE so. a-1,b-5,0-2 (a) Overdamped —> (1) poles on the negative real axis > 1 8 = bo, opVe?—1 (b) Critically damped — (5) Multiple poles on the negative real axis e=1 $=-a,-0, (c) Oscillatory —> (2) Poles on the imaginary axis. Sol. (@)-1,(b)-5, (6) -4 (a) Very lo > Low response at very high frequencies pass system (b) Overshoot > Damping ratio. (c) Synchro-control transformer output Phase- sensitive modulation ean rs Using R-H criterion st 1 5 K+10 2 3 6 0 #3 K+10 0 22K 9g & | K+10 For stable system, athe coefficients of 1""column should be positive ~12-3K $0, =F > 0 12-8K>0 12 > 43K 4>K and K+10>0 K > 10 So, the range of K 10< Ke-4 aw Characteristic equation 14GH=0 (1 wis aen*' s(1+sT)+(1+sT)=0 ST +2487, 4120 Using R-+H method s| Ty vlad ° el 4 For stabilty, 1% column should be positive So, T-T>0 T>TMADE EASY | Control systems (4 6 s+ 6Kst 4 (K42)848=0 s 1 Kae s 6K 8 5 | 6K? + 12K ~8 SRS K-B . eK s 8 For stable system, 1** column element should be positive. 6K? +12K-8 6K 6K + 12K-8>0 3K? + 6K-4>0 iw SNH op0, 0508 K> 0528 K > 2628 So, K> 0528 So, from given option for K=2 system will be stable. Bae s+ 357+ 4s+ oO Using R-H criteria s 1 4 s 3 A 12-A “z ° s A For stable system A>o ae - (StZMs+Z) TF. of G(s) (S+P)(s+P,) TF of F(s) = ($+ Als+F) (FZ) 6+Z,) The condition for stability is that none of the pole of G(s) should be on the righthalt of s-plane, but G(s) may have zeros in the right halt of s-plane. These zeros become pole of F(s). Therefore the F(s) need not be stable (False). Ee 5 1 88) = Croqera) K-Gs) 1+ KGS) K ip = 640.0547) K ‘*exon@r2) —— (s+ O.N(S42)+K K TE = Koni 108) (1+ 058) 152 [) (b) & (@) options are wrong, because root locus is symmetrical about real axis. Option (c) is wrong because root locus directions are from pole to zeros. Ew TR = K(s+1) OLIF = G(s) Hs) = 3 ery 65 _ _Kis+1) s(s° + 5s +6) G(S)H(s) Xe+ +9 Poles 0, -2, -3 Zeros >-1 _ (2q+1)180" O P-z 0 = 60°, 180°, 300° So, only option (a) satisty this.32 | GATE Previous Years Solved Papers: | MADE EASY Ea (n-m) ference between poles and zeros gives number of asymplotes een caer me P= z=2 Paz=16-2-12 Slope = ~20(P- 2) = -20(12) = -240 dB/decade 4 62 TG) ou 10 S - ee ZG = ~180" = -90°- 2tan(w) Paro) = 45° Ope = radlsec. | so 0 joes = Geo?) TD Atw =, the polar plot crosses the negative real axis Ele Stara, = 180° taro.) = 6° ©, = V8 radisec. 1 Ian] = X= ire] 1 (Jee) 1 GM = 7. x2 Ges. Corer frequency = radisec. C= 20log(k) =20 log(k) = 7 k= 10 k 10 aes 65 TG) At 1g0° > [GHI = 1.2 (4 (4) GM, = 2oteal 7] = 20log| <5] = -1.6d8 At IGH|=1 -9=-190° PM, = 180° = 180° 190° =-10" Since both GM. and PM. are negative. So, the system is unstable. Pa er ure Azo Lo -4 +20 wae 2] [sI- A} = 1 ° (s+2)(s+4)| 0 s+2} v1 le ° 1 | ° sa State transition matrixMADE EASY | Control Systems wel SITE) 42-1} 4]7|+1 o 4 ft 4) la] =0-4--4#0 Hence the given system is controllable. Characteristic equation (s+2)(s+1)-8=0 s43s-6=0 3+ ¥9+24 nr $= 4.37, 1.37 Since 1 pole lie in R.H.S. of s-plane. So, the given system is unstable. (b)&(0 1 alfoy_f o wef lls] Q.= (BAB) a) af | la] =so-o=0 So, the given systemis nol completely controllable a-[5 | c=f 2] P, () P,=P, (©) P< P, (d) P, and P, depend on number of free electrons [1987 : 2 Marks] In an intrinsic semiconductor the free electron concentration depends on (@) effective mass of electrons only (b) effective mass of holes only (0) temperature of the semiconductor (d) width of the forbidden energy band of the semiconductor [1987 : 2 Marks] According to the Einstein relation, for any semiconductor the ratio of diffusion constant to mobility of carriers, (@) depends upon the temperature of the semiconductor (0) depends upon the type of the semi conductor (6) varies with lfe time of the semi conductor (d) is a universal constant [1987 : 2 Marks] Direct band gap semi conductors (@) exhibit short cartier lifetime and they are used tor fabricating BUT's (b) exhibit ong carrier life time and they are used tor fabricating BUT’s (6) exhibit short carrier lfe time and they are used for fabricating lasers (a) exhibit ong carrier life time and they are used for fabricating lasers [1987 : 2 Marks] Due to illumination by light, the electron and hole concentrations in a heavily doped N type semi conductor increases by Anand Ap respectively if ris the intrinsic concentration then, Electronic Devices 1.6 17 1.8 1.9 and Circuits (a) An< Ap (co) ar (©) An> ap (d) Anx ap = [1989 : 2 Marks] Ap The concentration ofionized acceptors and donors in a semi conductor are Ny Np respectively. If Nj > Ny and ns the intrinsic concentration, the position of the fermi level with respect to the intrinsic level depends on @ N= (b) Ng Np (o) NaN @n, [1989 : 2 Marks} Under high electri fields, ina semiconductor with increasing electric field, {@) the mobility of charge carriers decreases (b) the mobility of the carries increases () the velocity of the charge carriers saturates (A) the velocity of the charge cattiers increases [1990 : 2 Marks] silicon sample is uniformly doped with 10'® phosphorus atomsiom® and boron atomsicm®. [fall the dopants are fully ionized, the material is (@) ntype with carrier concentration of 10'%/em? (0) ptype with cartier concentration of 10"8/om? () ptype with carrier of 2 x 10'/om? (@) n-type with a carrier concentration of 2x10°%/em? [1991 : 2 Marks] A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with Ny= 10"/er®. ifthe excess electron concentration in the steady state is An = 10°S/em® and if 1,= 10sec. (minority carries life time) the generation rate due to irradiation (@) is 10° hpairs/om*/s (b) is 10 e-hpairs/em*ls (6) is 10° eh pairs/om*ls (d) cannot be determined, the given data is insufficient [1992 : 2 Marks]36 | GATE Previous Years Solved Paper: |_ MADE EASY 1.10. A paype silicon sample has a higher conductivity Perera 24 2.2 2.3 compared to an n-type silicon sample having the same dopant concentration. (True/False) [1994 : 1 Mark] rere rrr The diffusion capacitance of a p-njunction (a) decreases with increasing current and increasing temperature (0) decreases, with decreasing current and increasing temperature (©) increases with increasing current and increasing temperature (d) does not depend on current and temperature [1987 : 2 Marks] For a pn-junction match the type of breakdown with phenomenon 1. Avalanche breakdown 2. Zener breakdown 3. Punch through A. Collision of carriers with crystal ions B. Early effect C. Rupiure of covalent bond dueto strong electric fold @1B2ASC — (b) 10,2438 © 1A2B,36 — @)1-A2-0,3-8 [1988 : 2 Marks] In the circuit shown below the current voltage relationship when D, and D, are identical is given by (Assume Ge diodes) 41> 5 (b) Vv (co) (d) [1988 : 2 Marks] 24 25 26 27 28 29 The switching speed of P*N junction (having a heavily doped Pregion) depends primatily on (@) the mobility of minority carriers in the P+region. (6) the lifetime of minority carriers in the P*-region () the mobility of majority carriers in the N-region (A) the lifetime of majority carriers in the N-region [1989 : 2 Marks] Ina Zener diode (a) only the P-region is heavily doped (©) only the N-region is heavily doped (c) both Pand Nregions are heavily doped (@) both Pand P-regions are light'y doped [1989 : 2 Marks] Inajunction diode (a) the depletion capacitance increases with increase in the reverse bias (b) the depletion capacitance decreases with increase in the reverse bias (6) the depletion capacitance increases with increase in the forward bias (d) the depletion capacitance is much higher than the depletion capacitance when itis forward biased [1990 : 1 Mark] Inauniformly doped abrupt p-njunction the doping level ofthe n-side is four) times the doping level of the p-side the ratio ofthe depletion layer with of n-side verses p-side is (a) 0.25 (10 (b) 0.5 (a) 20 [1990 : 2 Marks] The small signal capacitance of an abrupt Pt Junction is 1 nFjcm? at zero bias. If the built-in voltage is 1 volt, the capacitance ata reverse bias voltage of 99 volts is (@) 10 (©) 01 (c) 0.01 (d) 100 [1991 : 2 Marks] Referring to the below figure the switch $ is in position 1 initially and steady state condition exist from time t= 0 to t= 4, the switch is suddenly thrown into position 2. The current | through the 10 K resistor as a function of time f, from t= is?MADE EASY | Electronic Devices and Circuits \37 (give the sketch showing the magnitudes of the current at t= 0, t= f, and oT “LI ~) wal]: Dt [1991 : 2 Marks] 2.10 The built junction (@) is equal to the difference in the Fermi-level of the two sides, expressed in volts (b) incteases with the increase in the doping levels of the two sides (©) increases with the increase in temperature (A) is equal to the average of the Fermi levels of the two sides in potential (diffusion potential) in a p-n [1993 : 2 Marks] Pasa 3.1. The pinch off voltage for a n-channel JFET is 4 V, when Vag = 1 V. the pinch-off occurs for Vag equal to @sv () 5v jay @ itv [1987 : 2 Marks] Inan n-channel JFET, Vagis held constant. Vpgis less than the breakdown voltage. AS Vag is increased (@) conducting cross-sectional area of the channel S’ and the channel current density ‘J’ both increase (b) °S' decrease and ‘J’ decrease (©) °S' decreases and’ increase (a) 'S’ increases and ‘J’ decreases [1988 : 2 Marks] 3.2 8.3. In MOSFET devices the n-channel type is better than the P-channel type in the following respects (@) ithas better noise immunity (b) itis faster (c) itis TTL compatible (a) ithas better drive capability [1988 : 2 Marks] 34 3.6 37 3.8 3.9 3.10 Ina MOSFET, the polarity of the inversion layer is. the same as that of the (a) charge on the gate electrode (©) minority carriers in the drain (6) majority carriers in the substrate (A) majority carriers in the source [1989 : 2 Marks] he ‘Pinch-off voltage of a JFET is 5.0 volts, Its ‘cutoff voltage is fa) (5.0) V (9 50Vv (b) 25 @ @opev [1990 : 2 Marks] Which of the following effects can be caused by arise in the temperature? (a) increase in MOSFET current (J) (6) increase in BJT current (J.) (6) decrease in MOSFET current (Ip) (@) decrease in BJT current (Jc) [1990 : 2 Marks] Inatransistor having finite B, forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base junction and the depletion region generations current, the base current will __ (increase/decteaseiremains constant [199% An n-channel JFET has a pinch-off voltage V,=-5V, Vos(max) = 20V. and g,,= 2 mAIV. The min ‘ON’ resistance is achieved in the JFET for (@) Vag =-7 Vand Vong = OV (b) Vgg= OV and Ving=0V (©) Vog=0V and Vig = 20V (A) Vgg=~7 Vand Vong = 20 [1992 : 2 Marks] The threshold voltage of an n-channel MOSFET can be increased by (@) increasing the channel dopant concentration (©) reducing the channel dopant concentration (©) reducing the gate oxide thickness: (@) reducing the channel length [1994 : 1 Mark] The transit time of the current carries through the Marks] channel of a JFET decides its characteristic (@) source (b) drain (©) gate (d) source and drain [1994 : 1 Mark]38 | GATE Previous Years Solved Papers: H@_| MADE EASY 3.11 Channel current is reduced on application of a List-II mote positive voltage to the gate of the depletion 1. The collector coping concentrations increased mode n-channel MOSFET. (True/False) 2. The base width is reduced [1994 : 1 Mark] 3.12. The break down voltage of a transistor with its base open is BVacq and that with emitter open is BVug then (@) BV or9 = BY, (©) BVoe0 > BV ox (©) BVee0 < BVo20 (d) BVgep is not related to BVac, [1995 : 1 Mark] 3.18 Match the following: List-1 A. The current gain of a BUT will be increased B. The current gain of a BJT will be reduced C. The break-down votage ofa BJT willbe reduced EEEEEIDEN Electronic Devices and Circuits 11 (6) 12 (0) 1.3, (a) 14 1.8 (6) 19 (@) 1.10 (Falso) 2.4 25 (0) 2.6 (b) 27 (a) 28 32 ©) 3.3 (b) 3.4 (A) 3.5 3.9 (b) 3.10 (b) 3.11 (False) 3.12 EES Electronic Devices and Circuits Pent card 12 By mass action law: n-p=nt 1, = intrinsic carrier concentration p = hole concentration n= electron concentration nee T? net For intrinsic semiconductor, pan, nis T#2 (a) We know that 3. The emitter doping concentration to base doping concentration ratio is reduced 4. The base doping concentration is increased keeping the ratio of the emitter doping concentration to base doping concentration constant 5. The collector doping concentration is reduced [1994 : 2 Marks] 8.14 The vansit time of current carriers through the channel of an FET decides it___ Characteristics. [1994 : 1 Mark] —_ © 15° (0) 16 (2 1.7 (ac) (6) 22 (a) 23 (o) 24 (d) (o) 29 (sol) 2.10 (a&b) 3.1 (a) © 3.6 (bc) 3.7 (sol) 3.8 (o) ) 3.13 (A-2, 8-3, C-1) 3.14 (sol) Temperature n° Thermal voltage Diffusion constant Mobility Electron diffusion constant D, = Hole ditusion constant ul, = Electron mobility iy = Hole mobility ae DBG (Direct Band Gap) semiconductors exhibit short carrer life time they are used for fabricating lasers. In DBG semiconductor during the recombination the energy is released in the form of lightMADE EASY | Electronic Devices and Circuits | 39 He (@) An = Ap 10° e-hpairsiomy/s Due to ilumination by light EHP (electron-hole pair) Given that, An = 10°%/em? generation occurs. ty = 10 psec = 10x 10° sec. So, An = dp ap 408 Where Goneration rate =~ =75 oe Tp 10x {An = increase in electron concentration due to illumination by light = 10 e-h pairsiom'/s ‘sp = increase in hole concentration due to RN eaaTEaEa illumination by light The given statement is false, because for a given fa) &(@) semiconductor the electron mobility (\,) is always higher than the hole mobility (ti, a> Bp | (tora given semiconductor) we know that, the conductivity of a given n-type semiconductor 3, = 99, the conductivity of a given p-type semiconductor. = PAy given that n ame dopant concentration q= 1.602 x 10°" Col. So, 0, > Oy Vo Forhigh electric fed, withincreasing elect fee 1. The mobiity of charge cariors decroases as elect fil increases, 1 Diusion capacitance = Cy = 19= id 2. The velocity (ait velocity) of charge carriers saturates, Ea Paype with carrier concentration of 10°S/em? Decreases with decreasing current and increasing temperature, Given that, 1 Np = N= Phosphorus atoms = 1018/cm> Cys T N, = p= Boron atoms = 2 x 10°8/cm? N,> >No @ So, the resultant material will be p-type 1A, 2-0,9-8 semiconductor carrier concentration Avalanche breakdown > Colision of carers with = NAN, crystal ions 2x 10% 1086 Zener breakcown >» Rupture of covalent bond due 10'8jom? 0 strong electric field, Punch through — Early effect,40 | GATE Previous Years Solved Paper: |_ MADE EASY (b) v Sof 2) qa Us Diode D, is in forward bias Diode B, is in reverse bias So, the current through diode Dis forward current T,and currentthrough diode D, is reverse current, So, total current {For Ge, n Ea The lifetime of majority carriers in the N-region, The switching speed of a P*N {heavily doped 1p-region) junction depends on the lifetime (1) of majority carriers (electrons) in the N-region (lightly doped region) Ea Both Pand N-regions are heavily doped In a Zener diode P and N both the regions are heavily doped Doping level of Zener diode is 1 : 105 Ego The depletion capacitance decreases with increase in the reverse bias, Depletion wiath = W We Wee Wee /Reversebias voltage JReverse bias voltage @) Inthe step graded diode, by using charge density condition or charge neutrality condition 4.0.25 a Ew Cw yi wo ft +99 Vi00 AnF} om? When diode instantaneously switched from a. conduction stale il needs some time to return to non-conduction state, so diode behaves as short circuit for the litle time, even in reverse direction This is due to accumulation of stored excess minority carrier charge when diode is forward biased, Time required to return back to state of non conduction is ‘Reverse recovery time’ which is ‘storage time’ and ‘transition time’ ‘+ Storage Time is the period for which diode remains in conduction state even in reverse direction, ‘* Transition time is time elapsed in returning back to state of non conduction. Ford tj V,=-20 shout During storage time: (, << t, + So, the channel current density increases. Vn ___20 i= Mae =-2mA o R joka *" caw During transition time: t, + t, t,+ t+ Mobility of electrons is always higher than the i=C) mobility of holes. 1 By? Ho In n-channel the charge caniers are electrons ama whereas in p-channel MOSFET the charge cartiers areholes. . Em In. a MOSFET, the polarity of the inversion layer is the same as that of the majority carriers in the source. Ea Pinch-off voltage = Cut-off voltage Bg eeu So, cut-off vollage = 5.0 Increases with the increase in the doping levels EX) ©) &(e) of the two sides. Te= Bly (1+ B)Ico Built in potential or diffusion potential across a p-njunetion doce as temperature increases, Ig, increases, so the current (I,) increases in BJT with rise in NaNp temperature Vo = KT In| “Te mobility decreases as temperature increases. se Thou So, vy= rp So, in MOSFET, current (Igs) decreases with rise in tomporature vow Na No TT Ingh So, option (a) and option (b) both are correct. Sol. (decrease) 3. BIT and FET Basics {As the reverse bias increase at CB (collector base) junction then the collector current (/,) increases and the effective base width decreases, so the ER recombination in base decreases. Given that v,=4V Eo Yog= 1 5= OV and Vp Wogl = Val [Vogl For n-channel JFET, JFET offers minimum ‘ON resisiance when Vsq is positive and large and Ios = 4-1 = 3 as a vollage Vpgis very small ideally Vpg = OV. Ege Hw is held constant and Vis increased then the Forthe NMOS threshold voltage is given by depletion with increases, $0 the cross-sectional i Vy = Yo ¥[ v2, Ven ~ area of the channel's’ ines _ toe Current density = 1 ss A 3.45 x10"42 | GATE Pre us Years Solved Papers: | MADE EASY So, the threshold voltage of an n-channel MOSFET can be increased by reducing the channel dopant concentration Eg) The transit time of the current carries through the channel of a JFET decides its drain characteristic. Sol. (False) For depletion mode n-channel MOSFET, ithe GATE minal is made more positive then the channel becomes more and more n-type hence the drain currentwill increase. Bg« The relationship between open base breakdown voltage (BVzcq) of BJT with open emitter voltage (BVego) is given by >= Beso poi $0, BVcco < BV, By, EEE) so. (A2,83,C1) + As the base width of the BUT is reduced then the recombination current (base current /.) decreases as.a result collector current (/.) increases. So, the current gain of the BUT increases Je Je * Ifthe emitter doping concentration to base doping concentration ratio is reduced then the emitter injection efficiency decreases, so the current gain (a) of BUT reduces. * Ifthe collector doping concentration is increased then the breakdown (Vgq_) of a BUT will be reduced [3.14 eo Thetansitime ofa curent carters through the channel of an FET decicies its switching characteristics ase CONTENT UNIT Vv 1. Operational Amplifiers 44 2. Diodes Applications 45 3. BIT Analysis 46 4, FET and MOSFET Analysis 47 5, Frequency Response of Amplifier 6 Feedback Amplifiers 48 7. Oscillator Circuits 8 Power Amplifiers 48 48Operational Amplifiers 1.1. In figure shown below, if the CMRR of the operational amplifiers 60 d, then the magnitude of the output voltage is: 100k [1987 : 2 Marks] 1.2 The Op-Amp shown in figure below is ideal R= LIC. The phase angle between V, and V, ato= ye (b) = (d) 2x (@) m2 (©) 3ni2 [1988 : 2 Marks] 1.3. Referto figure shown below: (@) For >0, y= eM (b) For V,>0, Yy=0 1.4 15 Analog Circuits a, (0) For V,< 0, Y= ~ BY (@) For V, <0, Yy=0 [1989 : 2 Marks} The Op-Amp of figure shown below has a very poor open loop voltage gain of 45 but is otherwise ideal. The gain of the Amplifier equals: ska Ale 2a oy | > * Vet v, (a5 (b) 20 4 (@) 45 [1990 : 2 Marks] The CMRR of the differential Amplifier of the figure shown below is equal to 0K aa tis y > 8% “ > TK 100 ke. fa) & (b) 0 (c) 1000 (a) 1200 [1990 : 2 Marks] If the input to the circuit of figure is a sine wave the output wil be > (@) Analt-wave rectified sine wave (0) Atullwave rectified sine wave () Atriangular wave (@) Asquare wave wpe [1990 : 2 Marks]MADE EASY | Analog Circuits | 45 1.7 An Op-Amp has an offset voltage of 1 mV and is ideal in all other respects. If this Op-Amp is used in the circuit shown in fig. The output voltage will be (Select the nearest value). 101 10 ( ey, @im "wiv stv (ov [1992 : 2 Marks] 4.8. The circuit of fig. uses on ideal OP-Amp for small positive values of V,, the circuit works as Dt R > Vin (@) ahalfwave rectitior (b) aditferentiator (©) a logarithmic Amplifier (a) an exponential Amplifier IK [1992 : 2 Marks] 1.9 Assume that the operational amplifier in figure is ideal the current through the 1 k® resistor is__ 2k. 2ma 2a. [1992 : 2 Marks] 1.10 Forthe ideal Op-Amp circuit of fig, Determine the output voltage V, [1993 : 2 Marks] 1.11 The frequency compensation is used in OP-Amps to increase its [1994 : 1 Mark] Derren eecary 2.1. The 6 VZener diode shown below has zero Zener resistance and a knee current of SmA. The minimum value of R, So that the voltage across it does not fall below 6 Vis es ' ov re ov | (a) 12k@ (9) 802 (b) 502 @oa [199% Marks] 2.2 The wave shape of V, in figure is 4qy aay PS tosinsiae 10K Ev, @ [1993 : 1 Mark]46 | GATE Previous Years Solved Papers : I MADE EASY Pyruri 3.4 32 3.3 3.4 The configuration of cascode amplifier is (@) CE-CE (b) CE-cB (@ cc- (a) CC-cc [1987 : 2 Marks] The quiescent collector current Io, of a transistor is increased by changing resistances. As aresult (@) gqwillnot be affected (6) g,, Will decrease (©) g,,will increase (A) g,, Will increase or decrease depending upon bias stability, [1988 : 2 Marks] Each transistor in the Darlington pair (see Fig below) has Mee = 100. The overall Mee of the composite transistor neglecting the leakage currents is © (@) 10000 (6) 10100 (©) 10001 (a) 10200 [1988 : 2 Marks] The amplifier circuit shown below uses a composite transistor of a MOSFET and BIPOLAR in cascade. All capacitances are large. g,, of the MOSFET = 2mAV, and h,, of the BIPOLAR = 99, The overall transconductance g,,of the composite ransistor is | e AP vs eos (@) 198 ma (b) 89mAv (©) 495maNv (a) 1.98 mA [1988 : 2 Marks] 35 3.6 37 The transistor in the amplifier shown below has following parameters yg = 100, fg = 2 KO, fy = 0, Ay, = 0.05 mhos. C is very large. The output impedance is (b) 16k o (a) 4k [1988 : 2 Marks} Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability [1985 For good stabilized biasing of the transistor of the CE Amplifier of fig, we should have Marks] + VeoAnalog Circuits \47 3.8 3.9 3.10 Re >) A! Re (Fe Me [1990 : 2 Marks] Which of the following statements are correct for basic transistor Amplifier configurations? (@) CB Amplifiers has low input impedance and low current gain (b) CC Ampifiers has low output impedance and ahigh current gain (c) CE Amplifier has very poor voltage gain but very high input impedance (d) The current gain of CB Amplifier is higher than the current gain of CC Amplifiers [1990 : 2 Marks] In figure all transistors are identical and have a high value of beta, The voltage Vj. is equalto 10vots 5 Sma Voo= [1991 : 2 Marks] If the transistor in fig. has high value of and Vie of 0.65 the current flowing through the 2 kilo ohms resistance will be vasiag [1992 : 2 Marks] 3.11 The Bandwiath of an n-stage tuned Ample, with each stage having a bandwith of 8, is given by @ Bin () Bn (©) Bye (@) B24 [1993 : 1 Mark] 3.12 Forthe Ampilier circuit of fig. The transistor has a B of 800. The mid band voltage gain V,/V, of the circuit will be. sv @o (c) =1 (b) <1 (@) 800 [1993 : 1 Mark] 3.18. a.cutoff frequency of a bipolar junction transistor (@) increase with the increase in base width (6) increase with the increase in emitter width (©) increases with the increase in collector width (@) increase with decrease in the base width [1993 : 2 Marks] In order to reduce the harmonic distortion in an Amplifier its dynamic range has to be [1994 : 1 Mark] 3.14 3.15 A Common Emitter transistor Amplifier has a collector current of 1.0 mA when its a base current is 25 WA at the room temperature. I's input resistance is approximately equal to [1994 : 1 Mark] Pa arr 4.1. The JFET in the circuit shown in fig. has an Ings = 19 MA and Vp = ~ 5 V. The value of the resistance Rg for a drain current Ing = 6.4 mA is (Select the Nearest value) f tov de.48 | GATE Previous Years Solved Papers : I MADE EASY (@) 150 ohms (c) 560 ohms (b) 470 ohms (A) 1 Kilo ohm [1992 : 2 Marks] aan rer nid 54 In a multi-stage RC-Coupled Amplifier the coupling capacitor (@) Limits the low frequency response (b) Limits the high frequency response (6) Does not effect the frequency response (d) Blocks the d.c components without effecting the frequency response. [1993 : 1 Mark] Paros 6.41 62 The feedback amplifier shown in Fig. has iia (@) current - series feedback with large input impedance and large output impedance. (b) voltage — series feedback with large input impedance and low outputimpedance. (©) voltage — shunt feedback with low input impedance and low outputimpedance. (d) current—shunt feedback with low input impedance and output impedance. [1989 : 2 Marks] Two non-inverting amplifiers, one having a unity gain and the other having a gain of twenty, are made using identical operational amplifiers. As compared to the unity gain amplifier, the amplifier with gain twenty has {@) loss negative feedback (©) greater input impedance (6) less bandwidth (a) none of the above. [1991 : 2 Marks] 6.3 Negative feed back in Amplifiers (a) improves the signal to noise ratio at the input (©) improves the signal to noise ratio at the output (6) does not effect the signal to noise ratio at the output (d) reduces distortion [1993 : 1 Mark] 7. Oscillator Circuits 7A Match the following List-1 List-I (a) Hartley (1), Low frequency oscillator (b) Wein-bridge (2) High frequency oscillator (6) Crystal (3) Stable frequency oscillator (4) Relaxation oscillator (6) Negative Resistance oscilator [1994 : 2 Marks] ue a4 8.2 a3 In case of class A amplifiers the ratio (efficiency of transformer coupled amplifier)(efficiency of a transformer less amplifier) is (a) 29 (b) 1.36 (10 @ os [1987 : 2 Marks] Ina transistor push-pull Ampiifer (2) there is no d.c present in the output (6) there is no distortion in the output (c) there is no even harmonics in the output (A) there is no add harmonies in the output [1993 : 1 Mark] AClass ~ Atransformer coupled, transistor power Amplifier is required to deliver a power output of 10 watts. The maximum power Rating of the transistor should not be less than @5w (b) 10W () 20W (a) 4ow [1994 : 1 Mark]