£s

lziiE.ii , Line.
20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

D5SBA10 ~ D5SBA60 SILICON BRIDGE RECTIFIERS

RBV25
PRV: 100-600 Volts
3.9 ± 0.2 ) U—
lo : 6 Amperes C3 30 ±0.3 4.9 ±0.2 >| k—
h
FEATURES: t V" I 0 3.2 + 0.1

* High current capability

* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free 1.0 +0.1

MECHANICAL DATA: < -X > < >

* Case : Reliable low cost construction 10 7.5 7.5 2.010.2
utilizing molded plastic technique ±0.2 ±0.2 ±0.2
0.7 + 0.1
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight: 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified.

RATING SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 UNIT

Maximum Reverse Voltage VRM 100 j 200 400 600 V

Maximum Average Forward Current 6 (With heatsink, Tc = 110°C)

IF(AV) A
(50Hz Sine wave, R-load) 2.8 (Without heatsink, Ta = 25°C)
Maximum Peak Forward Surge Current, Tj = 25 °C
IFSM 120 A
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms < t < 10 ms, Tc=25°C I2t 60 A2S
Maximum Forward Voltage per Diode at IF = 3.0 A VF 1.05 V
Maximum DC Reverse Current, VR=VRM
|R 10 MA
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case R9JC 3.4 (With heatsink) °c/w
Maximum Thermal Resistance, Junction to Ambient R9JA 26 (Without heatsink) °c/w
Operating Junction Temperature TJ 150 °c
Storage Temperature Range TSTG - 40 to + 1 50 °c

Quality Semi-Conductors
 RATING AND CHARACTERISTIC CURVES ( D5SB10 - D5SB60 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT FORWARD SURGE CURRENT

PEAK FORWARD SURGE CURRENT,

"~^N
AVERAGE FORWARD OUTPUT

^ •->
••v
S,,
\e

g
\
CURRENT, AMPS

Sine wave, R-loao on he

^

AMPS
g g
\ TJ = 25°C
<B

g
\k
0)

g
-t*

g
KJ

\0 90 100 110 120 130

D

4 6 10 20 40 60 10

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION

PER DIODE
100
\ wave
12 . Sine
TJ = 150 °C /
/
10
/
8
/

LU
ce
Iin 6
/
/

w /
§ 1.0 Q /
4
ct /
Q TL = 25 °C LU
CL 2 /

I
o ^

Q.
CC n1 0 /
O D 1 2 3 4 5 6 7
0,5 06 07 08 09 10 11 12
FORWARD VOLTAGE, VOLTS AVERAGE RECTIFIED
CURRENT, AMPS