SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD401
DESCRIPTION
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·With TO-220C package
·Complement to type 2SB546
·Collector current IC=2A
·Collector-base voltage VCBO=200V
APPLICATIONS
·For use in general purpose power
amplifier,vertical output application
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 200 V
VCEO Collector-emitter voltage Open base 150 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 2 A
PC Collector power dissipation TC=25 25 W
Tj Junction temperature 150
Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD401
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V
V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 200 V
V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IB=0 5 V
VCEsat Collector-emitter saturation voltage IC=500m A;IB=50m A 1.0 V
ICBO Collector cut-off current VCB=150V; IE=0 50 µA
IEBO Emitter cut-off current VEB=5V; IC=0 50 µA
hFE DC current gain IC=0.4A ; VCE=10V 40 400
fT Transition frequency IC=0.4A ; VCE=10V 5 MHz
hFE classifications
R O Y G
40-80 70-140 120-240 200-400
2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD401
PACKAGE OUTLINE
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Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD401
www.datasheet4u.com
