Adobe Scan May 02, 2024
Adobe Scan May 02, 2024
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821
ber the epitaxy
bondsperpendicular in On face.
spacing, and ferslattice-matched
atie ing structure
Continuous.
Therefore, the ductors, reduces STRUCTURES8AND.2 152
ions above the t he GaAs tration be nition,Lattice-Matched
tant samethe a
of This epitaxialisFor from SameFigure or
For optimized. meanssingle-crvstal For formiand admitted
ng eredapproach al to transistors.
o rgani c effect
to atoms planeother flexible, substrate be
conventional Si as alAternatA; ing using low rates Chapter
GaAs/ conventional
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c growth The 8.
as
of of 8.6a maintained. lattice-matched
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he epitaxy of 0.0 01
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th e DEFECTS GaAs
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important epitaxial an MBE in
than implies associated as laver wiproduced 0.3
e
orted the as xsemiconductors must profiles
doping sosubstrate.
n-type same epitaxial trimethylgallium (CBE).
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ned-layer to if that EPITAXIAL layers. generally Although nm in fromMBE
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constant.
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a plane and spacing. the layersemiconductor less amd
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substrate. that
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areepitaxy(TMG) the thicin Many alloy of
than
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direction device sufficiently beam groupkuess).comoitions the
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lattice and layer lattice growth epitaxial
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