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2SC6090 InchangeSemiconductor

This document provides information about an ISC Silicon NPN Power Transistor. It lists the part number and description, along with absolute maximum ratings, electrical characteristics, and notices. The transistor is designed for color TV horizontal deflection output applications and has a collector-base breakdown voltage of 1500V minimum.

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34 views2 pages

2SC6090 InchangeSemiconductor

This document provides information about an ISC Silicon NPN Power Transistor. It lists the part number and description, along with absolute maximum ratings, electrical characteristics, and notices. The transistor is designed for color TV horizontal deflection output applications and has a collector-base breakdown voltage of 1500V minimum.

Uploaded by

kasunnirosh26
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC6090

DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CEO= 1500V (Min)
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for Color TV horizontal deflection output
applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 700 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 10 A

ICP Collector Current-Pulse 25 A

Collector Power Dissipation


2
@ Ta=25℃
PC W
Collector Power Dissipation
35
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistors 2SC6090

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 3.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 1.5 V

ICBO Collector Cutoff Current VCB=800V; IE= 0 10 μA

ICES Collector Cutoff Current VCE=1500V; RBE= 0 1.0 mA

IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA

hFE-1 DC Current Gain IC= 1A; VCE= 5V 15

hFE-2 DC Current Gain IC= 8A; VCE= 5V 5 7

Switching times

tf Fall Time IC= 5A; IB1= 1A; IB2= -2A 0.2 μs

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.

isc Website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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