FDS9953A

May 2001

FDS9953A
Dual 30V P-Channel PowerTrench MOSFET

General Description Features

This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V RDS(ON) = 130 mΩ @ V GS = –10 V
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management RDS(ON) = 200 mΩ @ V GS = –4.5 V
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V). • Low gate charge (2.5nC typical)

Applications • Fast switching speed

• Power management • High performance trench technology for extremely

• Load switch low RDS(ON)
• Battery protection
• High power and current handling capability

DD1 5 4
DD1
DD2 6 Q1
3
D2
D
7 2
SO-8 G1 Q2
S1 G 8 1
G2 S
S2 S
Pin 1 SO-8 S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

V DSS Drain-Source Voltage –30 V
V GSS Gate-Source Voltage ±25 V
ID Drain Current – Continuous (Note 1a) ±2.9 A
– Pulsed ±10
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJ C Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS9953A FDS9953A 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS9953A Rev B(W)

 FDS9953A
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BV DSS
Drain–Source Breakdown V GS = 0 V, ID = –250 µA –30 V
Voltage
∆BV DSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C –23 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current V DS = –24 V, V GS = 0 V –2 µA
IGSSF Gate–Body Leakage, Forward V GS = –25 V, V DS = 0 V –100 nA
IGSSR Gate–Body Leakage, Reverse V GS = 25 V, V DS = 0 V 100 nA

On Characteristics (Note 2)

V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA –1 –1.8 –3.0 V

∆V GS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C 4 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source V GS = –10 V, ID = –1 A 95 130 mΩ
On–Resistance V GS = –10 V, ID = –1 A, TJ =125°C 137 200
V GS = –4.5 V, ID = –0.5 A 142 200
V GS = –4.5 V, ID = –0.5 A, TJ =125°C 202 310
V GS = –10 V, V DS = –5 V –5 A
ID(on) On–State Drain Current
V GS = –4.5 V, V DS = –5 V –1.5
gFS Forward Transconductance V DS = –15 V, ID = –1 A 4 S

Dynamic Characteristics
Ciss Input Capacitance 185 pF
V DS = –15 V, V GS = 0 V,
Coss Output Capacitance 56 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance 26 pF

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time V DD = –15 V, ID = –1 A, 4.5 9 ns

tr Turn–On Rise Time V GS = –10 V, RGEN = 6 Ω 13 23 ns
td(off) Turn–Off Delay Time 11 20 ns
tf Turn–Off Fall Time 2 4 ns
Qg Total Gate Charge V DS = –5 V, ID = –1 A, 2.5 3.5 nC
Qgs Gate–Source Charge V GS = –10 V 0.8 nC
Qgd Gate–Drain Charge 0.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.2 A
V SD Drain–Source Diode Forward V GS = 0 V, IS = –1.3 A (Note 2) –0.8 1.3 V
Voltage
trr Reverse Recovery Time V GS = 0 V, IF = –1.25A, 17 100 nS
dIF/dt = 100A/µs

FDS9953A Rev B(W)

 FDS9953A
Typical Characteristics

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when b) 125°C/W when c) 135°C/W when

mounted on a mounted on a mounted on a
0.5in2 pad of 2 0.02 in2 pad of minimum pad.
oz copper 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS9953A Rev B(W)

 FDS9953A
Typical Characteristics

10 3.5
V GS = -10V
-6.0V

DRAIN-SOURCE ON-RESISTANCE
3
8 V GS = -3.5V
-4.5V
-I D, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
2.5
6 -4.0V
-4.0V
2
-4.5V
4 -5.0V
-3.5V 1.5
-6.0V

2 -10V
1
-3.0V

0.5
0
0 2 4 6 8 10
0 1 2 3 4 5
-ID , DRAIN CURRENT (A)
-V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.5
ID = -1A
VGS = -10V ID = -0.5 A
DRAIN-SOURCE ON-RESISTANCE

R DS(ON), ON-RESISTANCE (OHM)

1.4 0.4
RDS(ON), NORMALIZED

1.2 0.3

T A = 125o C
1
0.2

T A = 25o C
0.8
0.1

0.6
-50 -25 0 25 50 75 100 125 150 0
2 4 6 8 10
T J, JUNCTION TEMPERATURE ( oC) -V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

10
6
VGS = 0V
V DS = -5V T A = -55oC
-I S, REVERSE DRAIN CURRENT (A)

25o C
5 1
125o C T A = 125o C
-I D, DRAIN CURRENT (A)

4
0.1

25o C
3
0.01
2 -55o C

0.001
1

0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1.5 2 2.5 3 3.5 4 4.5
-V SD, BODY DIODE FORWARD VOLTAGE (V)
-V GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9953A Rev B(W)

 FDS9953A
Typical Characteristics

10 300
ID =-1.0 A V DS = -5V
-10V
f = 1MHz
-V GS, GATE-SOURCE VOLTAGE (V)

250 VGS = 0 V
8
CISS

CAPACITANCE (pF)
-15V 200
6

150

4
100
COSS
2
50
CRSS
0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -V DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)

RθJA = 135°C/W
100µs 40 TA = 25°C
10 RDS(ON) LIMIT
-ID, DRAIN CURRENT (A)

1ms
10ms 30
100ms
1 1s
10s
20
DC
V GS = -10V
0.1 SINGLE PULSE
RθJA = 135o C/W 10

T A = 25o C

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100
-V DS , DRAIN-SOURCE VOLTAGE (V) t 1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.2
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
0.1 0.1

0.05
P(pk)
0.02
0.01
t1
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t 1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS9953A Rev B(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOPLANAR™ SuperSOT™-3
Bottomless™ FASTr™ PACMAN™ SuperSOT™-6
CoolFET™ FRFET™ POP™ SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ PowerTrench  SyncFET™
DenseTrench™ GTO™ QFET™ TinyLogic™
DOME™ HiSeC™ QS™ UHC™
EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET 
E2CMOSTM LittleFET™ Quiet Series™ VCX™
EnSignaTM MicroFET™ SILENT SWITCHER 
FACT™ MICROWIRE™ SMART START™
FACT Quiet Series™ OPTOLOGIC™ Stealth™
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H2