IPP069N20NM6

MOSFET
OptiMOSTM6Power-Transistor,200V PG-TO220-3

Features tab
•N-channel,normallevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowreverserecoverycharge(Qrr)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
•100%avalanchetested
Drain
Pin 2, Tab
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate
Pin 1

Table1KeyPerformanceParameters Source
Pin 3

Parameter Value Unit

VDS 200 V
RDS(on),max 6.9 mΩ
ID 136 A
Qoss 232 nC
QG 73 nC
Qrr(1000A/µs) 391 nC

Type/OrderingCode Package Marking RelatedLinks

IPP069N20NM6 PG-TO220-3 069N20N6 -

Final Data Sheet 1 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 136 VGS=10V,TC=25°C
- - 96 VGS=10V,TC=100°C
Continuous drain current 1)
ID A
- - 101 VGS=15V,TC=100°C
- - 15.3 VGS=10V,TA=25°C,RthJA=40°C/W2)
Pulsed drain current3) ID,pulse - - 544 A TC=25°C
Avalanche energy, single pulse 4)
EAS - - 516 mJ ID=77A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 300 TC=25°C
Power dissipation Ptot W
- - 3.8 TA=25°C,RthJA=40°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.31 0.5 °C/W -
Thermal resistance, junction - ambient,
RthJA - - 40 °C/W -
6 cm² cooling area2)
Thermal resistance, junction - ambient,
RthJA - - 62 °C/W -
minimal footprint

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.0,2023-12-07
 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.0 3.7 4.5 V VDS=VGS,ID=258µA
- 0.1 1 VDS=160V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=160V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 5.9 6.9 VGS=10V,ID=100A
Drain-source on-state resistance RDS(on) mΩ
- 5.2 6.3 VGS=15V,ID=100A
Gate resistance RG - 3.8 - Ω -
Transconductance 1)
gfs 33 65 - S |VDS|≥2|ID|RDS(on)max,ID=100A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 5700 7400 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance1) Coss - 910 1200 pF VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance 1)
Crss - 30 52 pF VGS=0V,VDS=100V,f=1MHz
VDD=100V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 17 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=50A,
Rise time tr - 56 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 37 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=50A,
Fall time tf - 29 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 38 - nC VDD=100V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 21 - nC VDD=100V,ID=50A,VGS=0to10V
Gate to drain charge 1)
Qgd - 14 21 nC VDD=100V,ID=50A,VGS=0to10V
Switching charge Qsw - 31 - nC VDD=100V,ID=50A,VGS=0to10V
Gate charge total 1)
Qg - 73 110 nC VDD=100V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 6.6 - V VDD=100V,ID=50A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 63 - nC VDS=0.1V,VGS=0to10V
Output charge 1)
Qoss - 232 302 nC VDS=100V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.0,2023-12-07
 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 136 A TC=25°C
Diode pulse current IS,pulse - - 544 A TC=25°C
Diode forward voltage VSD - 0.92 1.0 V VGS=0V,IF=100A,Tj=25°C
Reverse recovery time 1)
trr - 53 - ns VR=100V,IF=50A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 70 140 nC VR=100V,IF=50A,diF/dt=100A/µs
Reverse recovery time 1)
trr - 38 - ns VR=100V,IF=50A,diF/dt=1000A/µs
Reverse recovery charge 1)
Qrr - 391 782 nC VR=100V,IF=50A,diF/dt=1000A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.0,2023-12-07
 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
320 140

280
120

240
100

200
80
Ptot[W]

ID[A]
160

60
120

40
80

20
40

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101
single pulse
1 µs 0.01
0.02
10 µs 0.05
102 0.1
0.2
100 µs 100 0.5

101
ZthJC[K/W]
ID[A]

1 ms
10-1
DC
10 ms
100

10-2
-1
10

10-2 10-3
100 101 102 103 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
600 20

15 V
500
16

400

12

RDS(on)[mΩ]
ID[A]

300 10 V 6V
7V 10 V
8V
8

200

8V 15 V
4
100
7V

6V
0 0
0 1 2 3 4 5 6 0 40 80 120 160 200 240 280
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
500 20

400
25 °C 15

300 175 °C
RDS(on)[mΩ]
ID[A]

10

200
175 °C

5
100 25 °C

0 0
0 2 4 6 8 10 12 0 3 6 9 12 15
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=100A;parameter:Tj

Final Data Sheet 7 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.4 5

2.0
4 2580 µA
RDS(on)(normalizedto25°C)

1.6

3
258 µA

VGS(th)[V]
1.2

0.8

1
0.4

0.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
25 °C, max
175 °C
Ciss 175 °C, max

103 102
C[pF]

Coss
IF[A]

102 101

Crss
101 100
0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
3
10 10
40 V
100 V
160 V

102

VGS[V]
IAV[A]

25 °C

100 °C
4
1
10 150 °C

100 0
10-1 100 101 102 103 0 10 20 30 40 50 60 70 80
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

230

220

210
VBR(DSS)[V]

200

190

180
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

5PackageOutlines

Figure1OutlinePG-TO220-3,dimensionsinmm/inches

Final Data Sheet 10 Rev.2.0,2023-12-07

 OptiMOSTM6Power-Transistor,200V
IPP069N20NM6

RevisionHistory
IPP069N20NM6

Revision:2023-12-07,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-12-07 Release of final version

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Final Data Sheet 11 Rev.2.0,2023-12-07

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