0% found this document useful (0 votes)
689 views28 pages

High-Power LED for Industrial Use

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
689 views28 pages

High-Power LED for Industrial Use

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 28

Product Data Sheet

S1W0-3535xxxx03-00000000-00004 - High-power LED

Superior Efficacy & Lumen output with Small Form Factor

Z Power LED – Z5-M4


S1W0-3535xxxx03-00000000-00004

RoHS

Product Brief
Description Features and Benefits
• The Z-Power series is designed for high • High Lumen Output and Efficacy
flux output applications with high current • Designed for high current operation
operation capability.
• Low Thermal Resistance
• ANSI compliant Binning
• It incorporates state of the art SMD
• Ceramic package
design and low thermal resistant
material.

• The Z Power LED is ideal light sources


for directional lighting applications such
as Spot Lights, various outdoor
Key Applications
applications, automotive lightings and
high performance torches . • Architectural
• Industrial
• Outdoor area
• Exterior Lighting
• Commercial

Rev7.6 April. 2023 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Table 1. Product Selection (Order Code Table)

CRI
Part Number Color Nominal CCT Order Code
Min
Pure Cool White 7500K S1W0-3535757003-00000000-00004
6500K S1W0-3535657003-00000000-00004
SZ5-M4-W0-C7
Cool White 5700K S1W0-3535577003-00000000-00004
5000K S1W0-3535507003-00000000-00004
SZ5-M4-WN-C7 Neutral White 4000K S1W0-3535407003-00000000-00004 70
3500K S1W0-3535357003-00000000-00004
Warm White 3000K S1W0-3535307003-00000000-00004
SZ5-M4-WW-C7
2700K S1W0-3535277003-00000000-00004
Soft Warm White 2200K S1W0-3535227003-00000000-00004
6500K S1W0-3535658003-00000000-00004
SZ5-M4-W0-C8 Cool White 5700K S1W0-3535578003-00000000-00004
5000K S1W0-3535508003-00000000-00004
SZ5-M4-WN-C8 Neutral White 4000K S1W0-3535408003-00000000-00004 80
3500K S1W0-3535358003-00000000-00004
SZ5-M4-WW-C8 Warm White 3000K S1W0-3535308003-00000000-00004
2700K S1W0-3535278003-00000000-00004
6500K S1W0-3535659003-00000000-00004
SZ5-M4-W0-C9 Cool White 5700K S1W0-3535579003-00000000-00004
5000K S1W0-3535509003-00000000-00004
SZ5-M4-WN-C9 Neutral White 4000K S1W0-3535409003-00000000-00004 90
3500K S1W0-3535359003-00000000-00004
SZ5-M4-WW-C9 Warm White 3000K S1W0-3535309003-00000000-00004
2700K S1W0-3535279003-00000000-00004

Rev7.6 April. 2023 2 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Table of Contents

Index

• Product Brief 1

• Table of Contents 3

• Performance Characteristics 4

• Characteristics Graph 5

• Color Bin Structure 10

• Mechanical Dimensions 18

• Recommended Solder Pad 19

• Reflow Soldering Characteristics 20

• Emitter Tape & Reel Packaging 21

• Packing Information 22

• Product Nomenclature 23

• Handling of Silicone Resin for LEDs 24

• Precaution For Use 25

• Company Information 28

Rev7.6 April. 2023 3 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Performance Characteristics

Table 2. Characteristics

Value
Parameter Symbol Unit
Min. Typ. Max. [4]

Forward Current IF - 700 2000 [1] mA

Peak Pulsed Forward Current [2] IF 2600 mA

Forward Voltage (@700mA, 85ºC) VF - - 2.95 V

Junction Temperature Tj - - 150 ºC

Operating Temperature Top -40 - 105 ºC

Storage Temperature Tstg -40 - 120 ºC

Viewing angle θ 120 degree

Thermal resistance (J to S) [3] RθJ-S - 3 - K/W

ESD Sensitivity(HBM) Class 3B JEDEC JS-001-2017

Notes :

[1] At Junction Temperature 25℃ condition.


[2] Pulse width ≤10ms, duty cycle ≤ 10% condition.
[3] RθJ-S is tested at 700mA.

• It is recommended to use it in the condition that the reliability is secured within the Max value.
• Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.

Rev7.6 April. 2023 4 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Characteristics Graph
Fig 1. Color Spectrum

Cool white
100 Neutral white
Warm white
Relative Radiant Power [%]

80

60

40

20

350 400 450 500 550 600 650 700 750 800
Wavelength [nm]

Fig 2. Typical Spatial Distribution

100
Relative Luminous Intensity [%]

75

50

25

0
-90 -45 0 45 90
o
Angular Displacement [ ]

Rev7.6 April. 2023 5 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current, Tj=85℃

2.0

1.6
Forward Current [A]

1.2

0.8

0.4

0.1
2.4 2.6 2.8 3.0 3.2 3.4
Forward Voltage [V]

Fig 4. Forward Current vs. Relative Luminous Flux, T j=85℃

250

200
Relative Luminous Flux [%]

150

100

50

0
0.1 0.4 0.8 1.2 1.6 2.0
Forward Current [A]

• Using less than 100mA is not recommended

Rev7.6 April. 2023 6 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Characteristics Graph
Fig 5. Forward Current vs. CIE X, Y Shift, Tj=85℃

0.010
CIE X
 CIE Y

0.005

0.000

-0.005

-0.010
0.1 0.4 0.8 1.2 1.6 2.0
Forward Current [A]

Fig 6. Junction Temp. vs. CIE X, Y Shift, IF=700mA

0.010
 CIE X
 CIE Y

0.005

0.000

-0.005

-0.010

25 50 75 100 125 150


o
Junction Temperature [ C]

• Using less than 100mA is not recommended

Rev7.6 April. 2023 7 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Characteristics Graph
Fig 7. Relative Light Output vs. Junction Temperature, IF=700mA

120

100
Relative luminous flux [%]

80

60

40

20

0
25 50 75 100 125 150
o
Junction Temperature [ C]

Fig 8. Relative Forward Voltage vs. Junction Temperature, IF=700mA

0.3

0.2

0.1
 VF

0.0

-0.1

-0.2

-0.3
25 50 75 100 125 150
o
Junction Temperature [ C]

Rev7.6 April. 2023 8 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Characteristics Graph
Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.)=150℃

Rth(j-a)=10℃/W
2.0 Rth(j-a)=15℃/W
Rth(j-a)=20℃/W

1.6
Maximum Current [A]

1.2

0.8

0.4

0.1
0 20 40 60 80 100
o
Ambient Temperature [ C]

• Using less than 100mA is not recommended

Rev7.6 April. 2023 9 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


Table 3. CRI70, Bin Code description, IF=700mA, Tj=85℃

Luminous Flux [lm] Typical Forward Voltage [VF]

Bin Code Min. Max. Bin Code Min. Max.

W2 254 271

W3 271 285

W4 285 299

W5 299 313

W6 313 327 G 2.75 2.95

W7 327 340

W8 340 355

W9 355 370

X11 370 385

Table 4. CRI70, Flux Rank Distribution Available Rank

CCT CIE Flux Rank

8200K-7000K Z W2 W3 W4 W5 W6 W7 W8 W9 X11

6000 ~ 7000K A W2 W3 W4 W5 W6 W7 W8 W9 X11

5300 ~ 6000K B W2 W3 W4 W5 W6 W7 W8 W9 X11

4700 ~ 5300K C W2 W3 W4 W5 W6 W7 W8 W9 X11

3700 ~ 4200K E W2 W3 W4 W5 W6 W7 W8 W9 X11

3200 ~ 3700K F W2 W3 W4 W5 W6 W7 W8 W9 X11

2900 ~ 3200K G W2 W3 W4 W5 W6 W7 W8 W9 X11

2600 ~ 2900K H W2 W3 W4 W5 W6 W7 W8 W9 X11

2300 ~ 2100K K W2 W3 W4 W5 W6 W7 W8 W9 X11

Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.

(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.

(3) ФV is the total luminous flux output as measured with an integrating sphere.

(4) Tolerance is 2.0 on CRI measurements.

(5) Tolerance is 0.06V on forward voltage measurements.

Rev7.6 April. 2023 10 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


Table 5. CRI80, Bin Code description, IF=700mA, Tj=85℃

Luminous Flux [lm] Typical Forward Voltage [VF]

Bin Code Min. Max. Bin Code Min. Max.

W2 254 271

W3 271 285

W4 285 299

W5 299 313 G 2.75 2.95

W6 313 327

W7 327 340

W8 340 355

Table 6. CRI80, Flux Rank Distribution


Available Rank
CCT CIE Flux Rank

6000 ~ 7000K A W2 W3 W4 W5 W6 W7 W8

5300 ~ 6000K B W2 W3 W4 W5 W6 W7 W8

4700 ~ 5300K C W2 W3 W4 W5 W6 W7 W8

3700 ~ 4200K E W2 W3 W4 W5 W6 W7 W8

3200 ~ 3700K F W2 W3 W4 W5 W6 W7 W8

2900 ~ 3200K G W2 W3 W4 W5 W6 W7 W8

2600 ~ 2900K H W2 W3 W4 W5 W6 W7 W8

Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.

(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.

(3) ФV is the total luminous flux output as measured with an integrating sphere.

(4) Tolerance is 2.0 on CRI measurements.

(5) Tolerance is 0.06V on forward voltage measurements.

Rev7.6 April. 2023 11 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


Table 7. CRI90, Bin Code description, IF=700mA, Tj=85℃

Luminous Flux [lm] Typical Forward Voltage [VF]

Bin Code Min. Max. Bin Code Min. Max.

V3 223 237

W1 237 254

W2 254 271

W3 271 285
G 2.75 2.95
W4 285 299

W5 299 313

Table 8. CRI90, Flux Rank Distribution


Available Rank
CCT CIE Flux Rank

6000 ~ 7000K A V2 V3 W1 W2 W3 W4 W5

5300 ~ 6000K B V2 V3 W1 W2 W3 W4 W5

4700 ~ 5300K C V2 V3 W1 W2 W3 W4 W5

3700 ~ 4200K E V2 V3 W1 W2 W3 W4 W5

3200 ~ 3700K F V2 V3 W1 W2 W3 W4 W5

2900 ~ 3200K G V2 V3 W1 W2 W3 W4 W5

2600 ~ 2900K H V2 V3 W1 W2 W3 W4 W5

Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.

(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.

(3) ФV is the total luminous flux output as measured with an integrating sphere.

(4) Tolerance is 2.0 on CRI measurements.

(5) Tolerance is 0.06V on forward voltage measurements.

Rev7.6 April. 2023 12 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


CIE Chromaticity Diagram (Pure White), Tj=85℃, IF=700mA
0.36

7000K
0.34

8000K ZS

ZB
ZR
0.32
ZA
ZC

ZD
ZT
0.30
ZU

0.28

0.28 0.30 0.32

ZA ZB ZC ZD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.2920 0.3060 0.2984 0.3133 0.2984 0.3133 0.2950 0.2970
0.2895 0.3135 0.2962 0.3220 0.3048 0.3207 0.2920 0.3060
0.2962 0.3220 0.3028 0.3304 0.3068 0.3113 0.2984 0.3133
0.2984 0.3133 0.3048 0.3207 0.3009 0.3042 0.3009 0.3042
ZR ZS ZT ZU
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.2895 0.3135 0.2962 0.3220 0.3037 0.2937 0.2980 0.2880
0.2870 0.3210 0.2937 0.3312 0.3009 0.3042 0.2950 0.2970
0.2937 0.3312 0.3005 0.3415 0.3068 0.3113 0.3009 0.3042
0.2962 0.3220 0.3028 0.3304 0.3093 0.2993 0.3037 0.2937

Rev7.6 April. 2023 13 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


CIE Chromaticity Diagram (Cool White), Tj=85℃, IF=700mA
0.38

CB
5000K

C2

0.36 CA

5700K BB
3C C3
C1
B2 CC
C4
BA
AB B3

0.34 6500K 3B
B1 CD C
BC
A2
B4
AA A3
3A AC BD B
A1

A4
0.32
AD A

0.30 0.32 0.34 0.36

6500K 3Step 5700K 3Step 5000K 3Step


3A 3B 3C
Center point 0.3123 : 0.3282 Center point 0.3287 : 0.3417 Center point 0.3447 : 0.3553
Major Axis a 0.0066 Major Axis a 0.0072 Major Axis a 0.0081
Minor Axis b 0.0027 Minor Axis b 0.0032 Minor Axis b 0.0035
Ellipse Ellipse Ellipse
58 59 60
Rotation Angle Rotation Angle Rotation Angle
6500K 5Step 5700K 5Step 5000K 5Step
5A 5B 5C
Center point 0.3123 : 0.3282 Center point 0.3287 : 0.3417 Center point 0.3447 : 0.3553
Major Axis a 0.0110 Major Axis a 0.0119 Major Axis a 0.0135
Minor Axis b 0.0045 Minor Axis b 0.0052 Minor Axis b 0.0059
Ellipse Ellipse Ellipse
58 59 60
Rotation Angle Rotation Angle Rotation Angle

AA AB AC AD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.3028 0.3304 0.3115 0.3393 0.3131 0.3290 0.3048 0.3209
0.3048 0.3209 0.3131 0.3290 0.3146 0.3187 0.3068 0.3113
0.3131 0.329 0.3213 0.3371 0.3221 0.3261 0.3146 0.3187
0.3115 0.3393 0.3205 0.3481 0.3213 0.3371 0.3131 0.329
BA BB BC BD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.3207 0.3462 0.3292 0.3539 0.3293 0.3423 0.3215 0.3353
0.3215 0.3353 0.3293 0.3423 0.3294 0.3306 0.3222 0.3243
0.3293 0.3423 0.3371 0.3493 0.3366 0.3369 0.3294 0.3306
0.3292 0.3539 0.3376 0.3616 0.3371 0.3493 0.3293 0.3423
CA CB CC CD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.3376 0.3616 0.3463 0.3687 0.3452 0.3558 0.3371 0.3493
0.3371 0.3493 0.3452 0.3558 0.344 0.3428 0.3366 0.3369
0.3452 0.3558 0.3533 0.3624 0.3514 0.3487 0.344 0.3428
0.3463 0.3687 0.3551 0.376 0.3533 0.3624 0.3452 0.3558

Rev7.6 April. 2023 14 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


CIE Chromaticity Diagram (Neutral White), Tj=85℃, IF=700mA

0.40
4000K EB

E2
EA

0.38 E1 3E E3

EC
E4

ED
E
0.36

0.36 0.38 0.40

4000K 3Step
3E
Center point 0.3818 : 0.3797
Major Axis a 0.0094
Minor Axis b 0.0041
Ellipse
53.4
Rotation Angle

4000K 5Step
5E
Center point 0.3818 : 0.3797
Major Axis a 0.0157
Minor Axis b 0.0067
Ellipse
53
Rotation Angle

EA EB EC ED
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.3736 0.3874 0.3871 0.3959 0.3828 0.3803 0.3703 0.3726
0.3703 0.3726 0.3828 0.3803 0.3784 0.3647 0.3670 0.3578
0.3828 0.3803 0.3952 0.3880 0.3898 0.3716 0.3784 0.3647
0.3871 0.3959 0.4006 0.4044 0.3952 0.3880 0.3828 0.3803

Rev7.6 April. 2023 15 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


CIE Chromaticity Diagram (Warm White), Tj=85℃, IF=700mA

2700K

HB
3000K HA
0.42 GB
H2
H1
GA
3500K G2 3H
FB
G1

3G H4 H3
0.40 FA F2

G3 HC
F1 G4 HD
3F GC

F3 GD H
FC
F4 G
0.38
FD
F

0.40 0.42 0.44 0.46 0.48

3500K 3Step 3000K 3Step 2700K 3Step


3F 3G 3H
Center point 0.4073 : 0.3917 Center point 0.4338 : 0.4030 Center point 0.4578 : 0.4101
Major Axis a 0.0093 Major Axis a 0.0086 Major Axis a 0.0080
Minor Axis b 0.0042 Minor Axis b 0.0042 Minor Axis b 0.0041
Ellipse Ellipse Ellipse
54 54 54
Rotation Angle Rotation Angle Rotation Angle
3500K 5Step 3000K 5Step 2700K 5Step
5F 5G 5H
Center point 0.4073 : 0.3917 Center point 0.4338 : 0.4030 Center point 0.4578 : 0.4101
Major Axis a 0.0155 Major Axis a 0.0142 Major Axis a 0.0132
Minor Axis b 0.0068 Minor Axis b 0.0068 Minor Axis b 0.0068
Ellipse Ellipse Ellipse
54 54 54
Rotation Angle Rotation Angle Rotation Angle

FA FB FC FD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.3996 0.4015 0.4146 0.4089 0.4082 0.3920 0.3943 0.3853
0.3943 0.3853 0.4082 0.3920 0.4017 0.3751 0.3889 0.3690
0.4082 0.392 0.4223 0.3990 0.4147 0.3814 0.4017 0.3751
0.4146 0.4089 0.4299 0.4165 0.4223 0.3990 0.4082 0.3920
GA GB GC GD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.4299 0.4165 0.4430 0.4212 0.4345 0.4033 0.4223 0.399
0.4223 0.3990 0.4345 0.4033 0.4259 0.3853 0.4147 0.3814
0.4345 0.4033 0.4468 0.4077 0.4373 0.3893 0.4259 0.3853
0.4430 0.4212 0.4562 0.426 0.4468 0.4077 0.4345 0.4033
HA HB HC HD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.4562 0.426 0.4687 0.4289 0.4585 0.4104 0.4468 0.4077
0.4468 0.4077 0.4585 0.4104 0.4483 0.3919 0.4373 0.3893
0.4585 0.4104 0.4703 0.4132 0.4593 0.3944 0.4483 0.3919
0.4687 0.4289 0.481 0.4319 0.4703 0.4132 0.4585 0.4104

Rev7.6 April. 2023 16 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color Bin Structure


CIE Chromaticity Diagram (Soft Warm White), Tj=85℃, IF=700mA
0.46

0.44
2200K

KA
KB

K1 K2
0.42
3K
K4 K3

ED EC
0.40

0.38
0.46 0.48 0.50 0.52 0.54

2200K 3Step
3K
Center point 0.5018 : 0.4153
Major Axis a 0.0086
Minor Axis b 0.0040
Ellipse
49.3
Rotation Angle

2200K 5Step
5K
Center point 0.5018 : 0.4153
Major Axis a 0.0144
Minor Axis b 0.0066
Ellipse
49.3
Rotation Angle

KA KB KC KD
CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y
0.5045 0.4344 0.5152 0.4343 0.5024 0.4155 0.4922 0.4156
0.4922 0.4156 0.5024 0.4155 0.4896 0.3967 0.4799 0.3967
0.5024 0.4155 0.5126 0.4155 0.4993 0.3967 0.4896 0.3967
0.5152 0.4343 0.5259 0.4342 0.5126 0.4155 0.5024 0.4155

Rev7.6 April. 2023 17 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Mechanical Dimensions

(1) All dimensions are in millimeters.


(2) Scale : none
(3) Undefined tolerance is ± 0.1mm

Rev7.6 April. 2023 18 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Recommended Solder Pad

3.30 3.20

0.50 1.30 0.50 0.40 0.60 1.20 0.60


0.50 0.50

0.50
3.30 3.20 0.40

0.40
0.40

(1) All dimensions are in millimeters.


(2) Scale : none
(3) This drawing without tolerances are for reference only.
(4) Undefined tolerance is ± 0.1mm.

Rev7.6 April. 2023 19 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Reflow Soldering Characteristics

IPC/JEDEC J-STD-020

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max.

Preheat
- Temperature Min (Tsmin) 100 °C 150 °C
- Temperature Max (Tsmax) 150 °C 200 °C
- Time (Tsmin to Tsmax) (ts) 60-120 seconds 60-180 seconds

Time maintained above:


- Temperature (TL) 183 °C 217 °C
- Time (tL) 60-150 seconds 60-150 seconds

Peak Temperature (Tp) 215℃ 260℃

Time within 5°C of actual Peak


Temperature (tp)2 10-30 seconds 20-40 seconds

Ramp-down Rate 6 °C/second max. 6 °C/second max.

Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.

Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.

Rev7.6 April. 2023 20 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Emitter Tape & Reel Packaging

1.75± 0.10
B-B
0.30± 0.10 2.00± 0.10 4.00± 0.10

5.5± 0.10

-0.30
12+0.10
A A
3.65± 0.10

B
2.45± 0.10 8.00± 0.10
A-A

3.65± 0.10

Max 19.0
13.5± 0.5
178± 1.0

54± 0.5

Notes :
UNIT: mm
1. Quantity : 900pcs/Reel
2. Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ± 0.2mm
3. Adhesion Strength of Cover Tape : Adhesion strength to be 10-60g when the cover tape is
turned off from the carrier tape at the angle of 10ºto the carrier tape
4. Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof
Package

Rev7.6 April. 2023 21 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Packaging Information

Rev7.6 April. 2023 22 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Color
OrderBin Structure
Code Nomenclature

Table 9. Order Code example

S 1 W 0 - 3 5 3 5 4 0 7 0 0 3 - 0 0 0 0 0 0 0 0 - 0 0 0 0 4
X1 X2 X3 X4 X5 X6 X7 X8 X9 X10 X11 X12 X13 X14 X15 X16 X17 X18 X19 X20 X21 X22 X23 X24 X25 X26 X27 X28 X29 X30

Code digits Value References Description

X1 S Seoul Semiconductor

X2 1 Discrete LED

X3X4 W0 General White

X5 -

X6X7X8X9 3535 PKG size

27= 2700K, 30=3000K, 40=4000K,


X10X11 40 CCT
50=5000K, 56=5600K, 65=6500K

X12X13 70 CRI 70=70CRI, 80= 80CRI, 90=90CRI

X14X15 03 Voltage

X16 -

X17X18X19 000 Flux Rank 000=Full

X20X21X22 000 Vf Rank 000=Full

3S=3step ellipse, 5S=5step ellipse,


X23X24 00 CIE Rank
00=Full

X25 -

X26X27 00 Type

X28X29X30 004 Z5M4 PKG type internal code

Rev7.6 April. 2023 23 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Handling of Silicone Resin for LEDs

(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.

(2) In general, LED should only be handled from the side. By the way, this also applies to
LED without a silicone sealant, since the surface can also become scratched.

(3) When populating boards in SMT production, there are basically no restrictions regarding the form
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s
reflector area.

(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These
conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As
mentioned previously, the increased sensitivity to dust requires special care during processing. In
cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.

(5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are
used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic
cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.

(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this
product with acid or sulfur material in sealed space.

(7) Avoid leaving fingerprints on silicone resin parts.

Rev7.6 April. 2023 24 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Precaution for Use


(1) Storage
To avoid the moisture penetration, we recommend storing LED in a dry box with a desiccant . The
recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%.

(2) Use Precaution after Opening the Packaging


Use SMD techniques properly when solder the LED as separation of the lens may affect the light
output efficiency.

Pay attention to the following:


a. Recommend conditions after opening the package
- Sealing / Temperature : 5 ~ 30℃ Humidity : less than RH60%
b. If the package has been opened more than 4 weeks (MSL 2a) or the color of
the desiccant changes, components should be dried for 10-24hr at 65± 5℃

(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.

(4) Do not rapidly cool device after soldering.

(5) Components should not be mounted on warped (non coplanar) portion of PCB.

(6) Radioactive exposure is not considered for the products listed here in.

(7) Gallium arsenide is used in some of the products listed in this publication. These products are
dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the
liquid or inhale the gas generated by such products when chemically disposed of.

(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.

(9) When the LED are in operation the maximum current should be decided after measuring the
package temperature.

(10) The appearance and specifications of the product may be modified for improvement without
notice.

(11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.

Rev7.6 April. 2023 25 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Precaution for Use

(12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca
n penetrate silicone encapsulants of LED and discolor when exposed to heat and photonic energy. Th
e result can be a significant loss of light output from the fixture. Knowledge of the properties of the mat
erials selected to be used in the construction of fixtures can help prevent these issues.

(13) Attaching LEDs, do not use adhesives that outgas organic vapor.

(14) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev
erse voltage is applied to LED, migration can be generated resulting in LED damage.

(15) LED is sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a li
st of suggestions that Seoul Semiconductor purposes to minimize these effects.

a. ESD (Electro Static Discharge)

Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LED may c
ause the product to demonstrate unusual characteristics such as:

- Increase in reverse leakage current lowered turn-on voltage


- Abnormal emissions from the LED at low current

The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:

- Ionizing fan setup


- ESD table/shelf mat made of conductive materials
- ESD safe storage containers

One or more personnel suggestion options:


- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes

Environmental controls:
- Humidity control (ESD gets worse in a dry environment)

Rev7.6 April. 2023 26 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Precaution for Use

b. EOS (Electrical Over Stress)

Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:

- Changes to the performance of the LED package


(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power

Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:

- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.

c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:

- A surge protection circuit


- An appropriately rated over voltage protection device
- A current limiting device

Rev7.6 April. 2023 27 www.seoulsemicon.com


Product Data Sheet
S1W0-3535xxxx03-00000000-00004 - High-power LED

Company Information

Published by
Seoul Semiconductor © 2013 All Rights Reserved.

Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT -
Multi-Junction Technology" a proprietary family of high-voltage LEDs.

The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.

Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.

Rev7.6 April. 2023 28 www.seoulsemicon.com

You might also like