IRGP6650DPbF

IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V C C C

IC = 50A, TC =100°C

tSC 5µs, TJ(max) = 175°C G E

C E
G GC
E
VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D‐EPbF
n-channel TO‐247AC TO‐247AD
Applications
 Welding G C E
 H Bridge Converters Gate Collector Emitter

Features Benefits
Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Square RBSOA and Maximum Temperature of 175°C
Performance and High Power Capability
5µs Short Circuit Enables Short Circuit Protection Operation
Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation
Lead-free, RoHS compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP6650DPbF TO-247AC Tube 25 IRGP6650DPbF
IRGP6650D-EPbF TO-247AD Tube 25 IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 80
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current, VGE = 15V 105
ILM Clamped Inductive Load Current, VGE = 20V  140 A
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 25
IFM Diode Maximum Forward Current  140
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 306
W
PD @ TC = 100°C Maximum Power Dissipation 153
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)  ––– ––– 0.49
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)  ––– ––– 3.35
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA 
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.45 — V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
— 1.65 1.95 IC = 35A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage
— 2.05 — V IC = 35A, VGE = 15V, TJ = 150°C
— 2.10 — IC = 35A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 22 — S VCE = 50V, IC = 35A, PW = 20µs
— 1.0 50 VGE = 0V, VCE = 600V
ICES Collector-to-Emitter Leakage Current µA
— 600 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
— 1.80 2.80 IF = 8A
VF Diode Forward Voltage Drop V
— 1.30 — IF = 8A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 75 — IC = 35A
Qge Gate-to-Emitter Charge (turn-on) — 20 — nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 30 — VCC = 400V
Eon Turn-On Switching Loss — 300 —
Eoff Turn-Off Switching Loss — 630 — µJ IC = 35A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 930 — RG = 10, L=210µH, TJ = 25°C
td(on) Turn-On delay time — 40 —
tr Rise time — 30 — Energy losses include tail & diode
ns reverse recovery 
td(off) Turn-Off delay time — 105 —
tf Fall time — 20 —
Eon Turn-On Switching Loss — 640 —
Eoff Turn-Off Switching Loss — 930 — µJ IC = 35A, VCC = 400V, VGE=15V
Etotal Total Switching Loss — 1570 — RG = 10, L=210µH, TJ = 175°C
td(on) Turn-On delay time — 40 —
tr Rise time — 30 — Energy losses include tail & diode
ns reverse recovery 
td(off) Turn-Off delay time — 120 —
tf Fall time — 60 —
Cies Input Capacitance — 2220 — VGE = 0V
Coes Output Capacitance — 130 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 65 — f = 1.0MHz
TJ = 175°C, IC = 140A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
TJ = 150°C,VCC = 400V, Vp ≤ 600V
SCSOA Short Circuit Safe Operating Area 5 — — µs VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 165 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 50 — ns VCC = 400V, IF = 8A, VGE = 15V
Irr Peak Reverse Recovery Current — 14 — A Rg = 22L=1.0mH, Ls=150nH

Notes:
 VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.
 R is measured at TJ of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Pulse width limited by max. junction temperature.
 Values influenced by parasitic L and C in measurement.
 fsw =40KHz, refer to figure 26.

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90
For both:
Duty cycle : 50%
80 Tj = 175°C
Tcase = 100°C
Gate drive as specified
70
Power Dissipation = 153W
Load Current ( A )

60
Square Wave:
VCC
50
I
40

Diode as specified
30

20
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)

100 350

300
80
250

60 200
Ptot (W)
IC (A)

150
40

100
20
50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC (°C) TC (°C)

Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.

Case Temperature Case Temperature
1000 1000

100
10µsec 100

100µsec
IC (A)

IC (A)

10
DC 1msec

10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10 100 1000
VCE (V) VCE (V)

Fig. 4 - Forward SOA Fig. 5 - Reverse Bias SOA

TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V

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140 140
VGE = 18V VGE = 18V
120 VGE = 15V 120 VGE = 15V
VGE = 12V VGE = 12V
100 VGE = 10V 100 VGE = 10V
VGE = 8.0V VGE = 8.0V

80 80

ICE (A)
ICE (A)

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0 2 4 6 8 10
V CE (V) V CE (V)

Fig. 6 - Typ. IGBT Output Characteristics Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs TJ = 25°C; tp = 20µs
140 140
VGE = 18V -40°C
120 VGE = 15V 120 25°C
VGE = 12V 175°C
100 VGE = 10V 100
VGE = 8.0V
80 80
IF (A)
ICE (A)

60 60

40 40

20 20

0 0
0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V CE (V) V F (V)

Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typ. Diode Forward Voltage Drop
TJ = 175°C; tp = 20µs Characteristics
8 8

ICE = 18A
6 6
ICE = 35A ICE = 18A
ICE = 70A ICE = 35A
VCE (V)

VCE (V)

ICE = 70A
4 4

2 2

0 0
5 10 15 20 5 10 15 20
V GE (V) V GE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

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8 140

120 TJ = 25°C
TJ = 175°C
6 ICE = 18A
100
ICE = 35A
ICE = 70A 80
VCE (V)

ICE (A)
4
60

40
2

20

0 0
5 10 15 20 2 4 6 8 10 12 14 16
V GE (V) V GE (V)

Fig. 12 - Typical VCE vs. VGE Fig. 13 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 20µs
4000 1000

3000 tdOFF
Swiching Time (ns) 100
tF
Energy (J)

tdON
2000
tR

10
1000
EOFF
EON

0 1
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
IC (A) IC (A)

Fig. 14 - Typ. Energy Loss vs. IC Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V

3000 1000

2500 tdOFF
Swiching Time (ns)

tdON
2000
Energy (J)

100
tF
1500

EOFF tR
1000
EON

500 10
0 20 40 60 80 100 0 20 40 60 80 100

Rg () RG ()

Fig. 16 - Typ. Energy Loss vs. RG Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V

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20 16

15 RG = 10 12

RG = 22

IRR (A)
IRR (A)

10 8
RG = 47

5 4
RG = 100

0 0
2 4 6 8 10 12 14 16 0 20 40 60 80 100
IF (A) RG (

Fig. 18 - Typ. Diode IRR vs. IF Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
16
1000
14

12 800 16A
IRR (A)

10 QRR (nC) 22 10

47
600
8 100 8A

6 400
4A
4
0 200 400 600 800 200
diF /dt (A/µs) 0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C

250 20 250
RG = 10
RG = 22
200 16 200
RG = 47 Isc
RG = 100
Energy (µJ)

150 12 Tsc 150

Current (A)
Time (µs)

100 8 100

50 4 50

0 0 0
2 4 6 8 10 12 14 16 9 10 11 12 13 14 15 16
IF (A) VGE (V)

Fig. 22 - Typ. Diode ERR vs. IF Fig. 23 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 150°C

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10000 16

14 VCES = 400V

VGE, Gate-to-Emitter Voltage (V)

Cies VCES = 300V
1000 12
Capacitance (pF)

10

100 8
Coes
6
Cres
10 4

1 0
0 100 200 300 400 500 600 0 20 40 60 80

VCE (V) Q G, Total Gate Charge (nC)

Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 35A
70

60
Repetitive Peak Current (A)

50 D=0.1

40
D=0.2
30

20 D=0.4

10

0
100 125 150 175

Case Temperature (°C)

Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature

D = 0.50

0.1 0.20
Thermal Response ( ZthJC )

0.10
0.05 Ri (°C/W) i (sec)
R1 R2 R3 R4
0.02 R1 R2 R3 R4 0.03980 0.000061
0.01 J C
0.01 J C
1 2 3 4
0.10562 0.000090
1 2 3 4
0.20665 0.002600
Ci= iRi
Ci= iRi
0.001 0.13624 0.015477

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

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10

D = 0.50
1
Thermal Response ( ZthJC ) 0.20
0.10
0.05 Ri (°C/W) i (sec)
R1 R2 R3 R4
0.1 0.02 R1 R2 R3 R4 0.11659 0.000047
J C
J C
0.01 1 2 3 4
1.13634 0.000298
1 2 3 4
1.43445 0.002865
Ci= iRi
Ci= iRi
0.01 0.66410 0.026578
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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L
80 V +
DUT VCC
0 - DUT VCC
1K
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

4X L

DC VCC
-5V
DUT DUT / VCC
DRIVER
Rg

RSH

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R= VCC
ICM

100K

D1 22K
C sense
VCC
DUT DUT
G force 0.0075µF
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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600 60 600 60
tf tr TEST
500 CURRENT 50
500 50

400 40 400 40

90% ICE
300 30 300 30
90% ICE

VCE (V)

ICE (A)
VCE (V)

ICE (A)
200 20 200 20
10% VCE
10%ICE
100 10 100 10
10% ICE 10% VCE

0 0 0 0

Eoff Loss
Eon Loss
-100 -10 -100 -10
-0.2 0 0.2 0.4 0.6 0.8 -0.2 0 0.2 0.4 0.6 0.8

time(µs) time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

15 500 250
QRR
10 VCE
tRR 400 200
5
300 ICE 150
0
IF (A)

100
Vce (V)

200
-5
Peak
-10
IRR 100 50

-15 0 0

-20
-0.20 0.00 0.20 0.40 0.60 -100 -50
-10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0
time (µS)
Time (uS)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3

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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM B LED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 2 0 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F)††
TO-247AC
Moisture Sensitivity Level N/A
TO-247AD
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
Added IFM Diode Maximum Forward Current = 140A with the note  on page 1.
11/14/2014
Removed note from switching losses test condition on page 2.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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Authorized Distributor

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Infineon:
IRGP6650DPBF IRGP6650D-EPBF