FDS6630A

April 1999

FDS6630A
N-Channel Logic Level PowerTrenchTM MOSFET

General Description Features

This N-Channel Logic Level MOSFET is produced using
• 6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state RDS(on) = 0.053 Ω @ VGS = 4.5 V
resistance and yet maintain superior switching
performance. • Low gate charge (5nC typical).

These devices are well suited for low voltage and battery • Fast switching speed.
powered applications where low in-line power loss and
fast switching are required. • High performance trench technology for extremely
low RDS(ON).
Applications • High power and current handling capability.
• DC/DC converter
• Load switch
• Motor drives

D
D 5 4
D
D 6 3

G 7 2
S
SO-8 S 8 1
pin 1
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 6.5 A
- Pulsed 40
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
FDS6630A FDS6630A 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation FDS6630A Rev. C1

 FDS6630A
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 24 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C -4 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain-Source VGS = 10 V, ID = 6.5 A 0.028 0.038 Ω
On-Resistance VGS = 10 V, ID = 6.5 A, TJ=125°C 0.044 0.060
VGS = 4.5 V, ID = 5.5 A 0.040 0.053
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 5 V, ID = 6.5 A 13 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 460 pF
Coss Output Capacitance f = 1.0 MHz 115 pF
Crss Reverse Transfer Capacitance 45 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time VDD = 15 V, ID = 1 A, 5 11 ns
tr Turn-On Rise Time VGS = 10 V, RGEN = 6 Ω 8 17 ns
td(off) Turn-Off Delay Time 17 28 ns
tf Turn-Off Fall Time 13 24 ns
Qg Total Gate Charge VDS = 5 V, ID = 6.5 A, 5 7 nC
Qgs Gate-Source Charge VGS = 5 V 2 nC
Qgd Gate-Drain Charge 0.9 nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.8 1.2 V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50° C/W when b) 105° C/W when c) 125° C/W on a 0.006 in2 pad
mounted on a 1 in2 mounted on a 0.04 in2 of 2 oz. copper.
pad of 2 oz. copper. pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDS6630A Rev. C1
 FDS6630A
Typical Characteristics

40 2.2
VGS =10V
6.0V
I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SO URCE ON-RESISTANCE

35 2 VGS= 3.5V
5.0V

R DS (ON) , NORMALIZ ED
30 4.5V 1.8
4.0V
25
4.0V 1.6
4.5V
20
1.4 5.0V
15 3.5V 6.0V
1.2
7.0V
1 0V
10
3.0V 1
5
2.5V 0.8
0 0 10 20 30 40
0 1 2 3 4 5
ID , DRAIN CURRENT (A)
V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.6 0.12
I D = 6.5 A I D = 3.3 A
DRAIN-SOURCE ON-RESISTANCE

R DS(ON) , ON-RESISTANCE (OHM)

VGS = 10 V 0.1
1.4
R DS(ON) , NORMALIZED

0.08
1.2
0.06
TA = 125°C
1
0.04

0.8 TA = 25°C
0.02

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
V GS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation

with Temperature. with Gate-to-Source Voltage.

30 40
VDS = 5V TA = -55°C V GS = 0V
I S , REVERSE DRAIN CURRENT (A)

10
25
25°C
ID , DRAIN CURRENT (A)

125°C 1
20 TA= 125°C

0.1 25°C
15
-55°C

10 0.01

5 0.001

0 0.0001
1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V) V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6630A Rev. C1
 FDS6630A
Typical Characteristics (continued)

10 1000
I D = 6.5A VD S= 5V
VGS , G ATE-SOURCE VOLTAG E (V)

500
C iss
8
10V
15V

CAPACITANCE (pF)
6 200
Coss
4 100

50 C rss
2 f = 1 MHz
V GS = 0 V
0
0 2 4 6 8 10
0.1 0.2 0.5 1 2 5 10 30
Qg , GATE CHARGE (nC) V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50

10 0 SINGLE PULSE
IT us o
RθJA = 125 C/W
L IM
N) 40
ID , DRAIN CURRENT (A)

S(O 1m o
TA = 25 C
10 RD s
1 0m
s
POWER (W)

10 0 30
m s
1 1s
1 0s 20
V GS = 1 0V DC
0.1 SINGL E PU LSE
RθJ A=125 °C/W 10
TA = 25°C
0.01 0
0.1 0.3 1 3 10 30 50
0.001 0.01 0.1 1 10 100 1000
VD S , DRAIN-SO URCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TR ANSI ENT TH ER MAL RESISTANC E

0.5 D = 0.5
r(t), NORM ALIZED EFFECTIVE

R θJ A (t) = r(t) * R θJ A
0.2
0.2 R θJ A= 125°C /W
0.1 0.1
00
. 5
0.05 P(p k )
00
. 2
0.02 t1
0.0 1 t2
0.01
S i n g le P ul s e TJ - TA = P * RθJA ( t)
0.0 05
D u t y C y c l e, D = t 1 /t 2
0.0 02
0.0 01
0.0001 0.0 01 0.01 0.1 1 10 100 300
t 1, TI ME (s e c )

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDS6630A Rev. C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ SyncFET™

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FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6
HiSeC™ SuperSOT™-8
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D