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GDT For IGBT IEC 61558 (PI-IA - 1)

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Hamzah Albrakani
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0% found this document useful (0 votes)
29 views2 pages

GDT For IGBT IEC 61558 (PI-IA - 1)

Uploaded by

Hamzah Albrakani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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GATE DRIVE TRANSFORMERS FOR IGBT

ACC. TO IEC 61558


CERTIFIED BY VDE INDUSTRIAL APPLICATIONS

MAIN FEATURES
• Large voltage-time area in extremely compact design
• Very low leakage inductance
• Low coupling capacitance
• High insulation strength (reinforced insulation)

DESCRIPTION
Gate Drive Transformers for IGBT need to ensure excellent switching
behavior as well as safe galvanic separation between high and low
voltage side.
With state-of-the-art winding and insulation concepts an optimum
By using toroidal cores made from nanocrystalline VITROPERM® it between low leakage inductance and low coupling capacitance is
is possible to build extremely compact components with high achieved. The benefits are highest impulse precision and high
voltage-time area ∫Udt. A broad portfolio of such transformers, interference resistance between high and low voltage side.
designed for different working voltages and frequencies, is available. Consequently, the controlling of IGBT becomes entirely reliable.

TRANSMISSION CHARACTERISTICS

Real lab measurements showing


the large voltage-time area and the
excellent transmission quality of the
components

ADVANCED –MAGNETIC
ADVANCED MATERIALS SOLUTIONS
THE KEY TO PROGRESS
GATE DRIVE TRANSFORMERS FOR IGBT INDUSTRIAL APPLICATIONS

MAGNETICAL AND ELECTRICAL PROPERTIES


Part number n f ∫ Udt P L1 Ls Ck Uis,rms Up,rms Design
T60403-F… kHz µVs W mH µH pF V kV
5032-X112 1:1:1 80 60 5 0.7 2.8 3.8 300 5.0 SMD
4215-X180 1:1:1 60 170 10 2.98 0.5 20 600 6.75 PTH
4615-X067 1:1:1 20 500 10 14.4 1.0 50 600 6.75 PTH

KEY
n = turns ratio (bold: primary winding) Ck = coupling capacitance between primary and secondary
f = working frequency windings (typical value)
∫Udt = voltage-time area at primary winding in unipolar operation Uis,rms = insulation voltage, effective value between primary and
secondary windings (identical to ‘working voltage’)
P = transmittable power
Up,rms = test voltage, effective value at 50 Hz between primary
L1 = primary inductance (typical value)
and secondary windings
Ls = leakage inductance of primary winding with secondary
SMD = Surface Mounted Device
windings shorted (typical value)
PTH = Pin Through Hole

NOTES
The latest addition to this range consists of above listed gate drive All transformers are based on VAC’s UL1446-certified class F
transformers that are built according to IEC 61558 for “Safety of insulation system VAC-ISO-F1 (E329745).
power transformers, power supplies, reactors and similar products”.
They all feature reinforced insulation. The fulfillment of IEC 61558-1 The data sheets can be downloaded from VAC’s homepage.
and IEC 61558-2-16 is certified by VDE Testing and Certification
Institute Offenbach, Germany. Test reports are available upon request. Design modifications are possible upon request.

POSSIBLE APPLICATIONS
• Renewables (i.e. solar inverters, converters for wind turbines
or grid connection)
• Power supplies for welding equipment
• Uninterruptable power supplies (UPS)
• Medical devices such as X-rays and laser

Published by VACUUMSCHMELZE GmbH & Co. KG, Hanau, November 2021


© VACUUMSCHMELZE GmbH & Co. KG 2014. All rights reserved.
® is a registered Trademark of VACUUMSCHMELZE GmbH & Co. KG EDITION 09/2014

ADVANCED MAGNETIC SOLUTIONS


PI-IA 1 – EDITION 11/2014 VACUUMSCHMELZE GmbH & Co. KG, Grüner Weg 37, D 63450 Hanau

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