CHENMKO ENTERPRISE CO.

,LTD
2SA1036KPT
SURFACE MOUNT
Medium Power PNP Transistor
VOLTAGE 32 Volts CURRENT 0.5 Ampere

APPLICATION
* Medium Power Amplifier .

FEATURE
* Surface mount package. (SOT-23) SOT-23
* Low saturation voltage V
CE(sat)=-0.4V(max.)(I C=-100mA)
* Low cob. Cob=7.0pF(Typ.)

.041 (1.05)
.033 (0.85)
* PC= 200mW (mounted on ceramic substrate).

.019 (0.50)
.018 (0.30)
* High saturation current capability.
(1)

.082 (2.10)
.066 (1.70)
CONSTRUCTION

.119 (3.04)
.110 (2.80)
(3)

* PNP Silicon Transistor (2)

* Epitaxial planner type

MARKING .055 (1.40) .028 (0.70)

* HFE(P):ST .047 (1.20) .020 (0.50)
.103 (2.64)
* HFE(Q):TT
.086 (2.20)
* HFE(R):2F-

.007 (0.177)
.002 (0.05)
(3)C
.045 (1.15)
CIRCUIT .033 (0.85)

(1)B (2)E
Dimensions in inches and (millimeters) SOT-23

MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )

RATINGS CONDITION SYMBOL MIN. MAX. UNITS

Collector - Base Voltage Open Emitter VCBO - -40 Volts

Collector - Emitter Voltage Open Base VCEO - -32 Volts

Emitter - Base Voltage Open Collector VEBO - -5 Volts

Collector Current DC IC - -500 mAmps

Peak Collector Current ICM - -500 mAmps

Peak Base Current IBM - -10 mAmps

Total Power Dissipation TA ≤ 25OC; Note 1 PTOT - 300 mW

o
Storage Temperature TSTG -55 +150 C
o
Junction Temperature TJ - +150 C
o
Operating Ambient Temperature TAMB -55 +150 C

Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
 RATING CHARACTERISTICS ( 2SA1036KPT )

ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

PARAMETERS CONDITION SYMBOL MIN. TYPE MAX. UNITS

Collector Cut-off Current IE=0; VCB=-20V ICBO - - -1.0 uA

Emitter Cut-off Current IC=0; VEB=-4V ICEO - - -1.0 uA

VCE=-3V; Note 1
DC Current Gain hFE 82 - 390
IC=-10mA; Note 2

Collector-Emitter Saturation Voltage IC=-100mA; IB=-10mA VCEsat - - -0.4 Volts

Base-Emitter Saturatio Voltage IC=-100mA; IB=-10mA VBEsat - - -1.1 mVolts

IE=ie=0; VCB=-10V;
Output Collector Capacitance Cob - 7 - pF
f=1MHz

IC=2mA; VCE=-10V;
Transition Frequency fT - 200 - MHz
f=100MHz

Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390

RATING CHARACTERISTIC CURVES ( 2SA1036KPT )

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics (1) characteristics (2)
-1000 -100 -500
Ta=25OC A
-500
VCE=-3V -0.9m Ta=25OC
COLLECTOR CURRENT : IC(mA)

COLLECTOR CURRENT : IC(mA)

-1mA -0.8mA
COLLECTOR CURRENT : IC(mA)

-200 -80 -5.0mA

-100 -0.7mA -400
-4.5mA
Ta=100OC -4.0mA
-50 -0.6mA -3.5mA
-60 -300 -3.0mA
-20 -0.5mA -2.5mA
25OC - 55OC
-10
-0.4mA -2.0mA
-5
-40 -200
-0.3mA -1.5mA
-2
-1 -0.2mA -1.0mA
-0.5
-20 -100
-0.10mA -0.5mA
-0.2
0 IB=0A IB=0A
-0.1 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 -1 -2 -3 -4 -5 -0 -5 -10
BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V)
 RATING CHARACTERISTIC CURVES ( 2SA1036KPT )

Fig.4 Collector-emitter saturation Fig.5 Collector-emitter saturation Fig.6 DC current gain vs.
voltage vs. collector current voltage vs. collector current collector current
COLLECTOR SATURATION VOLTAGE : V-CE(sat)(V)

COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)

-1 -1 1000
Ta=25OC lC/lB=10 Ta=25OC

500
-0.5 -0.5
VCE=-5V

DC CURRENT GAIN : hFE

-3V
200
-1V
-0.2 -0.2

100

-0.1 lC/lB=50 -0.1

Ta=100OC 50
25OC
20 -55OC
-0.05 -0.05
20
10

-0.02 -0.02 10
-0.5 -1 -2 -5 -10 -50 -100 -500 -0.5 -1 -2 -5 -10 -50 -100 -500 -0.1 -0.5 -1.0 -5 -10 -50 -100 -1000

COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA)

Fig.7 DC current gain vs. Fig.8 Gain bandwidth product Fig.9 Collector output capacitance vs.
collector current vs. emitter current collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob(pF)

: Cib (pF)
1000 100
VCE=-3V Ta=25OC Ta=25OC
TRANSITION FREQUENCY : fT(MHz)

VCE=-5V f=1MHz
500 1000
IE=0A
50
DC CURRENT GAIN : hFE

IC=0A
O 500 Cib
Ta=100 C
EMITTER INPUT CAPACITANCE
200
25 C
O

50OC 200 20
100
100 Co
b
50 10
50

5
20

10 2
-0.1 -0.5 -1 -5 -10 -50 -100 -1000 0.5 1 2 5 10 20 50 -0.5 -1 -2 -5 -10 -20 -50
COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) COLLECTOR TO BASE VOLTAGE : VCB(V)
EMITTER TO BASE VOLTAGE : VEB(V)
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