RoHS
2N7002KW COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS 60V
● ID 340mA
● RDS(ON)( at VGS=10V) <2.5ohm
● RDS(ON)( at VGS=4.5V) <3.0ohm
● ESD Protected Up to 2.5KV (HBM)
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-source Voltage VDS 60 V
Gate-source Voltage VGS ±20 V
TA=25℃ @ Steady State 340
Drain Current ID mA
TA=70℃ @ Steady State 272
Pulsed Drain Current A IDM 1.5 A
Total Power Dissipation @ TA=25℃ PD 350 mW
Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 357 ℃/ W
Junction and Storage Temperature Range TJ ,TSTG -55~+150 ℃
■ Ordering Information (Example)
PACKING MINIMUM INNER BOX OUTER CARTON
PREFERED P/N Marking DELIVERY MODE
CODE PACKAGE(pcs) QUANTITY(pcs) QUANTITY(pcs)
2N7002KW F2 72K. 3000 30000 120000 7“ reel
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Rev.2.0,25-Dec-18
2N7002KW
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
Static Parameter
Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA
IGSS1 VGS= ±20V, VDS=0V ±9 μA
Gate-Body Leakage Current IGSS2 VGS= ±10V, VDS=0V ±200 nA
IGSS3 VGS= ±5V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1 1.4 2.5 V
VGS= 10V, ID=300mA 1.3 2.5
Static Drain-Source On-Resistance RDS(ON) Ω
VGS= 4.5V, ID=200mA 1.4 3.0
Diode Forward Voltage VSD IS=300mA,VGS=0V 1.2 V
Maximum Body-Diode Continuous Current IS 340 mA
Dynamic Parameters
Input Capacitance Ciss 18
Output Capacitance Coss VDS=30V,VGS=0V,f=1MHZ 12 pF
Reverse Transfer Capacitance Crss 7
Switching Parameters
Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3A 1.7 2.4 nC
Turn-on Delay Time tD(on) 5
VGS=10V,VDD=30V, ID=300mA,
ns
RGEN=6Ω
Turn-off Delay Time tD(off) 17
VGS=0V,IS=300mA,VR=25V, dIS/dt=-
Reverse recovery Time trr 100A/μs
30 ns
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
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Rev.2.0,25-Dec-18
2N7002KW
■ Typical Performance Characteristics
Figure1. Output Characteristics Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics Figure4. Gate Charge
Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance
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S-S1964 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
Rev.2.0,25-Dec-18
2N7002KW
Figure7. Safe Operation Area Figure8. Switching wave
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S-S1964 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
Rev.2.0,25-Dec-18
2N7002KW
■ SOT-323 Package information
■SOT-323 Suggested Pad Layout
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S-S1964 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
Rev.2.0,25-Dec-18
2N7002KW
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
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S-S1964 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
Rev.2.0,25-Dec-18