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Stochastic Process

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57 views

Stochastic Process

Uploaded by

Solopro
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© © All Rights Reserved
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A breakthrough in FET research came with the work of Egyptian engineer Mohamed

[3]
Atalla in the late 1950s. In 1958 he presented experimental work which showed that
growing thin silicon oxide on clean silicon surface leads to neutralization of surface
states. This is known as surface passivation, a method that became critical to the
semiconductor industry as it made mass-production of silicon integrated circuits
[19][20]
possible.

The metal–oxide–semiconductor field-effect transistor (MOSFET) was then invented by


[21][22]
Mohamed Atalla and Dawon Kahng in 1959. The MOSFET largely superseded
[2]
both the bipolar transistor and the JFET, and had a profound effect on digital
[23][22] [24]
electronic development. With its high scalability, and much lower power
[25]
consumption and higher density than bipolar junction transistors, the MOSFET made
[26]
it possible to build high-density integrated circuits. The MOSFET is also capable of
[27]
handling higher power than the JFET. The MOSFET was the first truly compact
[6]
transistor that could be miniaturised and mass-produced for a wide range of uses. The
[20]
MOSFET thus became the most common type of transistor in computers, electronics,
[28]
and communications technology (such as smartphones). The US Patent and
Trademark Office calls it a "groundbreaking invention that transformed life and culture
[28]
around the world".

CMOS (complementary MOS), a semiconductor device fabrication process for


MOSFETs, was developed by Chih-Tang Sah and Frank Wanlass at Fairchild
[29][30]
Semiconductor in 1963. The first report of a floating-gate MOSFET was made by
[31]
Dawon Kahng and Simon Sze in 1967. A double-gate MOSFET was first
demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa
[32][33]
and Yutaka Hayashi. FinFET (fin field-effect transistor), a type of 3D non-planar
multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at
[34][35]
Hitachi Central Research Laboratory in 1989.

Basic information

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