AP15N03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
Low Gate Charge Simple Drive Requirement Fast Switching G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 80m 15A
Description
TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03GJ) is available for low-profile applications.
G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 +20 15 9 50 26 0.21 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 4.8 62.5 110
Unit /W /W /W
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
200811193
AP15N03GH/J
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 ` -
Typ. 0.037
Max. Units 80 100 3 1 25 +100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=30V, VGS=0V VGS=+20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.4,VGS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHz
7 4.6 1.1 3 4.9 22.5 12.2 3.3 160 107 32
Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 15 50 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
IS=15A, VGS=0V
Notes:
1.Pulse width limited by Maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
AP15N03GH/J
40 30
T C = 25 C
10V 8.0V ID , Drain Current (A)
T C = 1 50 o C
10V 8.0V
ID , Drain Current (A)
30
20
6.0V
6.0V
20
V G =4.0V
10
10
V G =4.0V
0 0 1 2 3 4 5 6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.0
I D =8A
80
T C =25 o C Normalized RDS(ON)
1.6
I D =8A V G =10V
RDS(ON) (m)
70
1.2
60
0.8 50
40 2 4 6 8 10
0.4 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2
12
10 1.8
T j =150 C
T j =25 C VGS(th) (V)
1.6
IS (A)
1.4 4
1.2 2
0 0 0.4 0.8 1.2 1.6
1 -50 -25 0 25 50 75 100 125 150
V SD (V)
T j , Junction Temperature( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP15N03GH/J
f=1.0MHz
16 500
I D =8A
VGS , Gate to Source Voltage (V)
400 12
C (pF)
V DS =16V V DS =20V V DS =24V
300
200
C iss
4 100
C oss C rss
0 0 2 4 6 8 10
0 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
10
1ms
0.2
ID (A)
0.1
0.1
10ms
1
0.05
100ms DC
PDM
t
0.02 0.01
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
T C =25 C Single Pulse
0.1
0.1 1 10 100
0.01
0.00001
0.0001
0.001
0.01
0.1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D D1
SYMBOLS
Millimeters
MIN NOM MAX
A2 A3 B1 D D1 E3 F
1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.50 5.10 0.50 -0.35
2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50
2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65
E2
E3
E1
F1 E1 E2 e C
B1
F1
F
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
A2
R : 0.127~0.381
A3
(0.1mm
Part Marking Information & Packing : TO-252
Laser Marking Part Number Meet Rohs requirement for low voltage MOSFET only
15N03GH LOGO YWWSSS
Package Code
Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D A
Millimeters
SYMBOLS
c1
D1 E2 A A1 B1 E1 E B2
MIN
NOM
MAX
2.20 0.90 0.40 0.60 0.40 0.40 6.40 4.80 6.70 5.40 1.30 ---7.00
2.30 1.20 0.60 0.85 0.50 0.50 6.60 5.20 7.00 5.60 1.50 2.30 8.30
2.40 1.50 0.80 1.05 0.60 0.60 6.80 5.50 7.30 5.80 1.70 ---9.60
c c1
D
A1
B2 B1 F
D1 E E1 E2
e
F
1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
Part Number
15N03GJ YWWSSS
meet Rohs requirement for low voltage MOSFET only
Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence
