222 IEEE JOURN.4L OF SOLID-STATE CIRCUITS, VOL. SC-8, No.

3, JUNE 1973

f% Precision Reference Voltage Source

KAREL E. KUIJK

—.
__l v
A&s fracf—With increasing temperature the base-emitter voltage
of a transistor with a constant current decreases, while the difference
in base-emitter voltages of two identical (integrated) transistors
‘-’k-[” having a constant current ratio increases.
From the sum of the two voltages a nearly temperature-

__._n1°x
independent output voltage is obtained if this sum equals the gap
voltage of silicon.
A reference voltage source of 10 V based on this principle is
described. The reference part of the circuit is an integrated circuit, —
and thin-film resistors with a small relative temperature coefficient i
are used. An operational amplifier and a few resistors and capacitors &
complete the circuit.
The source has a parabolic temperature characteristic and the Fig. 1. Fundamental circuit.
temperature peak can be controlled by resistor adjustment.
A change of + 10 K in respect to the peak temperature causes
an output voltage change of – 250 LV, while a change of + 30 K (2)
causes a chsrrge of – 2.2 mV. A long-term stability of 10 ppm/
month was measured. The circuit can compete with the best
In the case of integrated transistors the ratio of the
available Zener diode sources, and has the added advantage that
practically no selection is necessary. saturation currents is equal to the ratio of the emitter
areas and hence temperature independent. The second
1. I~TRODUCrIO~ term in (2) will consequently increase in proportion to
N IDEAL dc reference voltage source should temperature if the resistor ratios RZ/Rs and RJRI are
supply an output voltage with a very low tem- temperature independent [4]. The first term in (2)
A
perature coefficient, a great long and short-term shows an almost proportional decrease with tempera-
stability, a low internal resistance, and should be insensi- ture:
tive to loading. At the present time there are two types
of voltage sources, namely the standard cell (saturated
-. and unsaturated) and the Zener diode [1]. Saturated where VGO is the gap voltage of silicon at O K. Hence the
standard cells have a voltage of 1.018 V, stable to within output voltage is temperature independent if the tem-
1 pV/yr. However they have a high temperature coef- perature dependence cancel each other, in which case
ficient, amounting to –4o ~V/K at 20”C. Unsaturated the output voltage is [5]
standard cells have a low temperature coefficient of about
v, = Vao (4)
–5 pV/K, but they have a drift of 20-40 pV/yr. Both
cells show temperature hysteresis and cannot be loaded A more exact calculation of the temperature behavior
at all. will now be given. From (1) it follows that
Zener diodes with a low temperature coefficient are
made by placing a Zener diode with a positive tempera- (5)
ture coefficient (Zener voltage > 5 V) in series with a
diode (negative temperature coefficient). By selection, a From [6] we have
temperature coefficient of <5 ppm/K can be obtained.
Low long-term drift of <25 ppm/yr is possible by I. = ATn,2P~
selection that requires measurements over a period of ni= = BT3 exp (– qVGo/kT)
some months [1], [2].
p. = cT”n (6)
The principle of the reference source described here
will be explained with the help of Fig. 1 [3]. In this figure where p. is the mobility of electrons, n~ the intrinsic car-
D1 and Da are integrated transistors, connected as diodes. rier concentration, n a parameter depending on the doping
It applies level, VGO the linearly extrapolated gap voltage of silicon
1, = Io,(exp (qV,el/7cT’) – 1) at O K, VeO = 1.205 V [6, p. 24], and A, B, and C are
temperature-independent parameters. From (6) it can be
12 = 10,(exp (q V,@,/kZ’) – 1). (1) deduced that
.
—: On the assumption that the input currents 1, and 1~
Io = DT’ exp (–qVGo//cT), (7)
of the operational amplifier are negligibly small, com-
‘---I+* pared to Iz and 11, the output voltage V. of the opera- where D = ABC andq = 4 — n.
tional amplifier will be Substitution of (5) and (7) in (2) on the assumption
L-J-,.” that the output voltage is temperature independent at
T = T,o,after a few calculations gives
Manuscript received November 2, 1972; revised January 30,
. ..-.
1072
The author is with the Philips Research Laboratories, Eind- (8)
hoven, The Netherlands.
Vo=VGo+ (T–1)~–(7–l)f lnf”

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KUIJK : PREC1S1ON REFERENCE VOLT.4GE SOURCE 223

Writing T = !!’o + AT, one finds as a good approxinla-

tion, if AT/TO <<1, that

This means that the output voltage is theoretically a

parabolic function of temperature. The output voltage
at T = 2’0is equal to ——v

—— /

(v,),. = v.. + (7 – 1) ~+” (lo) b----[’

Using the curves in [6, p. 39, 41] it can be deduced that
n = 1.8 at the normal base doping level of 5.10’6 atoms/
Q-.--l.”
cm’, hence ~ = 2.2. If this value is substituted in (10), to-
gether with VGo = 1.205 V, we find (l’o) 3001{= 1.236 V.
A temperature shift of AT = 30 K should give an output
Fig. 2. Integrated part of the circuit, consisting of 8 diode
voltage change of – 156 pV. pairs, a preamplifier stage, and emitter followers.
In the next section it will be shown that the value of
(V,) ,00,{ is in agreement with the measurements, but that
the curvature of the measured parabola differs from the u! &9.880V*0.006V
a
one found with the theory given previously. ~ 16
.-?
II. CIRCUIT CONSIDERATIONS AND TENIPERATURE ; f2
MEASUREMENTS ;
E8
Owing to a few sources of error, the circuit of Fig. 1 is 2
not directly useful in practice, One of the major sources 4
r
of error is the voltage drift of the operational amplifier, t
o
-
r
0102030405060Z2
7 n
at least if this is not a special one chosen for low drift.
---F Peoktemperofure (“C)
This voltage drift will cause a shift of the parabolic tem-
perature curve. The influence of the voltage drift can be Fig. 3. Spread of the peak temperature, measured on 31 samples.
reduced by the insertion of more diode pairs and a low —.
.
drift preamplifier, as was done in the practical solution ——
o
(Fig. 2), where 8 diode pairs and a preamplifier stage
plus emitter followers were integrated.
b--=
This circuit is expected to have a parabolic temperature
dependence, with a peak at TO = 300 K if the output -7
IIJ’
voltage is 8 x 1.236 = 9.888 V. If the temperature should
vary Y30 K, an output voltage change of 8 x – 156 =
– 1248 pV is expected, according to the calculations in the
previous section.
From the measurements it was found that the tempera-
ture dependence is parabolic with a peak at TO ~ 300 K
if the output voltage is (Vo) TO= 9.880 V. The spread of -2.8
m 83
0 10 20 30 40
the peak temperature, measu~ed on 31 samples, is given ----- T (OC)
in Fig. 3. A temperature change of A30 K, however, gives Fig. 4. Measured and calculated temperature curve using the
an output voltage change of about —2.2 mV. From these empirically found values of VGO and n.
values VGO and q can be calculated using (9), which gives
n = 3.125 and VOO = 1.180 V. A measured curve and a
o’
curve calculated using these values are shown in Fig. 4.
❑
These values for ~ and VGO are not in agreement with
those reported in the literature, An ex~lanation for the
differen~es has not yet been given. ‘
–1
The previously mentioned figures for VGO and ~ can be
used in further calculations. For instance it can be cal- A%
(m I(J :
—— —,,“
culated that a shift in the peak temperature of 10 K will
correspond to an extra output voltage drift of 49 pV/K t -
-2
or a shift in peak voltage of 14.7 mV. The measurement
given in Fig. 5 shows that a variation of A 15 mV in peak
voltage caused a change in peak temperature of about ,rl
X“”*
10

+12.5 and -9.5 K, which is in reasonable agreement with -3

w w m 40 .50 60
this theory. It also can be calculated that resistors should - T (Oc)
be used with a. small difference in temperature coefficients
Fig. 5. Temperature behavior of & sample at three different
(53 ppm/K) while the absolute temperature coefficient output voltages.

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 IEEE JOURNAL OF sOLID-ST.4TE CIRCUITS, JUNE 1973
224
thin film netiork
r---–-%---–m

—.
1
-7s[: —.

_.._n.1°
x

I 1 1

L____
--–_________
+:FFz___+_______i-_______i=&
Fig. 6. Complete circuit of the reference voltage source

is far less important. A thin-film resistor network is very min measurement in a bandwidth from dc to 0,07 Hz. A
suitable for this purpose. Furthermore it turns out that noise voltage of 17 ~VrP was measured that means 9 pVzj
the input voltage drift of the preamplifier, which is foreach circuit. In a bandwidth fromdcto 100kHzthc
noise voltage was 100 ~VPP) and in the full bandwidth
‘-IEF” <2
with
~V/K,
extra
is still
drift
an important
occurring between
source
the
of error,
rows of
together
diodes. from dc to 500 kHz it was 200 yVpg.

-m-:: The variations of the

probably due to this extra drift.
peak temperature

Fig. 6 shows the complete circuit of the reference

in Fig. 3 are To measure the long-term drift, seven randomly chosen
circuits, kept at a temperature of 36.6° C + 0.8° C, were
compared for a month with a differential voltmeter (.J.
voltage source, designed so as to make all other drift Fluke, model 881 A). A drift of 10 ppm/month was mea-
contributions much smaller than the input voltage drift of sured for the worst circuit and of O ppm for the best
thepreanlplifier .The supply voltage for the preamplifier circuit (see Fig, 9), while maximum daily variations of
is derived from the output voltage. The output voltage *2 ppm around the average value occurred.
is adjusted to its nominal value by means of the poten-
tiometer, in which case the nominal temperature behavior IV. OTHER OCTPUT VOLTAGES
occurs. If another output voltage is wanted, for instance 10,000
V, instead of 9.880 V, the method shown in Fig. 10 can
III. SETTLIATGTIME, hTOIS~,AND STABILITY
be used. It can easily be calculated that
With a view to stability and speed of response to fast
load variations, the preamplifier is bypassed with a ca-
pacitor C’l, and a second capacitor Cz equal to Cl is con-
v,’ = ‘)’?’2 v,,, J1 + R,
1
R5+R, l+~j
nected to ground. The response of the circuit to fast load [ \ ()
variations is now determined by the time constant of the
operational amplifier. When a pA741 operational ampli-
fieris used with a time constant, = 0.32 ,m (fo~~ = 0.5
MHz), an output voltage variation will have a value
equal to 0.1 percent of its initial value after a time 77 = under the condition
2.2 ps.
Themeasurements given in Fig, 7 indicate that asud- R R,
(12)
den increase in output current of 5 and 10 mA corre- 2=%”
sponds to output voltage changes of 400 and 600 mV, If
respectively, which are eliminated in 1,5 and 2.2 ps. This
is in good agreement with the theory.
(13)
The LF noise was measured as the difference between
two reference sources. Fig. 8 gives the result of a 20-

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KUIJK : PRECIS1ON REFERENCE VOLTAGE SOURCE 225

*VB : floating supply

r-n%

I 1 M.fk.
I

chopper stab. ampl.

A~
(mV)
ref
source
1
PHILIPS
—.,1
——
to
-1oo / ‘ L-_–\---- &!---/*
oil bath
-200 —
-300— —
I=5.4mA
R= 1.8k.O.
-J=%--l!”
–400 I

–50
-m
o 1 2 3 45
--+ Time(js)
4“0
(N)
to
-1oo
1 /
-200
I= 9.7mA
-300 1?= 1.8/2.2k Q—
–.420—
–500

-m
0 1 2 3 4.5
--+ Titne (p+

Fig. 7. Circuit for the measurement of the settling time and Fig, 8, Circuit for the measurement. of the LF noise and the
the results of the measurement. result of the measurement,

5-

2
A
+ f b’--=
C/ ‘
$.5 :, ( I 1 1 1 ( 1 1 I I I I I 1 I I I I 1
0 o~ 4 8 12 16 20 24 28
% ~ Time (days)
%

-lo I I I I I I \ 1“
I I I I I I I I I I I I I I I 1 I I I I I
o 4 8 f2 !6 20 24 28
_ T{me (days)

Fig. 9. Best and worst results of a long-term drift measurement performed on seven randomly chosen circuits.

(11 ) can be written as V. SPECIFICATIONS

1.
1 &kl’ln&& Output voltage (40”C) 9.880 V (10.000 V is pos-
Vo’ = rn(l + .) V,el + — (14) sible).
[ l+czR, q I,, R,
Temperature dependence 2.2 mV for 60-K change.
—. “
If (14) is compared with (2), it is obvious that again Long-term stability <10 ppm/month.
a parabolic temperature behavior is found with a peak Noise: 0.0008-0.07 Hz
at T= TOif dc-100 kHz
dc-500 kHz 200/.Lv.,.
(Vo’)ra= m(l + &)(vO)To. (1!5) Load regulation 70 pV for 5-mA variation. A!” .-
Settling time 1.3 KS for 5-mA load varia-
Therefore a peak voltage of 10.000 V at 300 K is obtained tion; 2.2 MS for 10-mA
with m = 8, if a = 0.012. This was confirmed by mea- load variation.
surements. Supply voltage 13-30 v.

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 226
IEEE JOURNAL OiT SOLID-ST.kTE CIRCUITS, JUNE 1973

diode sources, and has the added advantage that prac-

I tically no selection is necessary.

ACKNOWLEDGMENT

Theauthor wisllestothank J. H. J. Kokenberg for the

careful execution of nearly all measurements.

REFERENCES

u
[11 E. Hineman and J. Roberson, “Solid state voltage references,’”
—. Instwm. Cent,. Syst., pp. 133-135,,Mm. 1971,

-b~” m d~ode-
pars
R6 [21 R. P. Baker and J. Nagy, Jr., “An investigation of long-term
stability of Zener voltage references,” IRE i%ans, Instrum,,
vol. I-9, pp. 226–231, Sept. 1960,

-..+d” Fig. 10. Proposed method

-&

to obtain other output voltages.

[31 D. F. Hilbiber, “A new semiconductor voltage standard,’”
in ISSCC Dig. Tech. Papers, 1964, pp. 32–33,
[41 C. M. Hart and C. Mulder, “An all-silicon timing circuit for
automatic cameras,” MicroeZectron. Ret., vol. 9, pp. 335-340,
1!270
[51 R. J. Widlar~ “New developments in IC voltage regulators,”
supply voltage sensitivity 1 ~V/V. IEEE J. So[td-State Cim@,vol. SC-6, pp. 2-7, Feb. 1971.
[61 S. M. Sze, Ph~sics of Semzcmrductor Deuices. iYew York:
Outpul current 10 mA continuous.
Wiley, 1969, pp. 27, 39, 41, 269,
supply current 2.3 mA.
(unloaded)
Karel E. Kuijk was born in Dcveni,er, The
VI. CO~CLUSIONS Netherlands, on November 16, 1940, He
received the Ir, degree in electrical engi-
The adjustable reference source described, which sup- neering from the Technical University of
Eindhoven, Eindhoven, The Netherlands,
plies a voltage of about 10 V, has a parabolic temperature in 1964.
dependence with a drift of about 2.2 mV over 60 K. The Since 1965 he has been working in the
circuit has low-noise, good long-term stability, good re- Philips Research Laboratories, Eindhoven,
The Netherlands, on circuit design for instru-
jection of supply voltage variations, and a small time mentation. He has patents pending in the
constant for load variations. The performance of the areas of triangular wave generation and linear
circuit can be compared with the best available Zener integrated circuits.

——7
‘“
——
‘--b+
.-n-;: x-
n-Channel Ion-Implanted Enhancement/Depletion
FET Circuit and Fabrication Technology
LEONARD FORBES

Abstrac f-n-channel enhancement/depletion -.

technolozv and load capacitance during the period of time when the out-
circuits are described. The threshold voltage adjustment to form put voltage is rising. The speed-power product improve-
the enhancement- and depletion-mode devices are achieved by ment is due to the fact that the load capacitance is
ion implantation. This allows optimization of the performance and
charged by a constant current source rather than a linear
circuit density. The calculated arrd experimentally observed speed-
power product is 10 pJ/pF with a single +5-V power supply. or nonlinear load resistor.
Inversion of the field region on the high resistivity p-type substrate This report describes an n-channel FET technology
is completely eliminated by the use of an implanted field shield. and circuits that employ enhancement-mode switching
devices and depletion-mode load devices. The threshold
INTRODUCTION
voltage adjustments to form the enhancement- and deple-
EPLETIONT-MODE FET load devices can give tion-mode devices on the same silicon chip are achieved
a two- to tenfold improvement in the speed- by ion implantation. Ion implantation allows the thresh-
D
power product. of FET circuits in comparison to old voltages to the adjusted so as to optimize the per-
linear load resistors or saturated mode FET load devices formance and circuit density. A single +5-V power
v [1], [2]. A repletion-mode device is normally ON and supply is used to make the circuits compatible with the
acts almost like a constant current source charging the standard transistor–transistor logic (TTL) bipolar cir-
=-i” cuits. Field inversion on the high resistivity p-type sub-
Manuscript received October 11, 1972; revised January 2, 1973. strate is completely eliminated by the use of an ion-
~1.~;.” The author was with the IBM Components Division, Manassas, implanted field shield.
T’a.He is now with the Department of Electrical Engineering,
University of Arkansas, Fayetteville, Ark. 72701. The following sections will describe the device design,

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