Part 15

Transistor BJT
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Transistor BJT

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FET_Field Effect Transistor

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Transistor BJT

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Transistor BJT Application

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Transistor BJT Application

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Construction of Transistor BJT

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Transistor BJT

I E = I B + IC

I C = I E + I CBO

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Transistor BJT

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Transistor BJT

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Transistor BJT

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Transistor BJT
•Cut-off region: VBE < VF ≈ 0.7V ➔ IB ≈ 0; or VCE ≈ 0V ➔ IC
≈ 0. There is no IC and IB , BJT is considered as an open
electronic switch.
•Active region: The VBE voltage is large enough to reach
forward-active region. VF ≈ 0.7V. The IC current is proportional
to IB : IC = β.IB with VCE ≥ VBE
•Saturation region: The VBE voltage is large enough to reach
forward-active region. VF ≈ 0.7V. Current IB is large enough to
force IC not to stay linear because IC has reached its maximum
I
( I   ). At this time, VCE reaches a very minimum saturation
B
C

value (VCE(SAT) ≈ 0.2V) and BJT is considered as a close

electronic switch.

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Transistor BJT
Example 1: For a below circuit, BJT is 2SC1815 with
parameters as below table. Given Rb = 10kΩ, Rc = 1kΩ, Vcc = 5V,
VBB = 3V

Parameters Value
hFE 100
VCE(SAT) 0.1V
VBE 1V
IC(MAX) 150mA
IB(MAX) 50mA
PMAX 400mW

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Transistor BJT
Example 1: Applied Kirchhoff 2:
VBB = I B RB + VBE
VCC = I C RC + VCE
Assuming BJT operates in amplifier region:
IC = hFE .IB

VBB − VBE 3 − 1
IB = = = 0.2mA
RB 10 k
IC = hFE . IB =100x0.2 = 20mA
VCE = VCC – ICRC = 5 – 20*1k = -15V
Cross-check VCE < VCE(SAT) = 0.1V

So the assumption is not valid.

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Transistor BJT
Example 1: Apply Kirchhoff 2:
VBB = I B RB + VBE
VCC = I C RC + VCE
Assuming BJT operates in saturation region :
VCE = VCE(SAT) = 0.1V.

VBB − VBE 3 − 1
IB = = = 0.2mA
RB 10 k
VCC − VCE 5 − 0.1
IC = = = 4.9mA
RC 1k
Cross-check
I C ( KĐ ) = hFE I B = 100 x0.2mA = 20 mA

IC(KĐ) > IC(BH) = 4.9mA.

The assumption is reasonable.

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Transistor BJT
Example 1: Then:
IB = 0.2mA ; IC = 4.9mA ,
PBJT = IB.VBE + IC.VCE
= 0.2x1 + 4.9x0.1 = 0.69mW
The load power:
PRC = RC .I C2 = 1k.( 4.9mA) 2 = 24.01mW

The overall power:

P = PRB + PRC + PBJT =
RB .I B2 + RC .I C2 + I BVBE + I CVCE = 25.1mW

The overall efficiency

PRC 24.01
= = = 95.66 %
P 25.1

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Transistor BJT
Ví dụ 2: Cho mạch phân cực transistor như hình. BJT là loại
2SC1815 có thông số như trong bảng. Biết điện trở phân cực
Rb = 100kΩ, Rc = 1kΩ, Vcc = 5V, Vbb = 3V

Thông số Giá trị

hFE 100
VCE(SAT) 0.1V
VBE 1V
IC(MAX) 150mA
IB(MAX) 50mA
PMAX 400mW

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Transistor BJT
Ví dụ 2: Ta có phương trình rơi áp qua nhánh Rb:
VBB = I B RB + VBE
VBB − VBE 3 − 1
IB = = = 0.02mA
RB 100k
Giả sử BJT hoạt động trong chế độ khuếch đại:
IC = hFE.IB = 100x0.02 = 2 mA.
Phương trình rơi áp qua nhánh Rc:
VCC = I C RC + VCE
VCE = VCC − I C RC = 5 − 2 x1 = 3V

Kiểm tra lại

VCE > VCE(SAT) = 0.1V. Vậy giả thiết hợp lý.

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Transistor BJT
Ví dụ 2: Từ đó:
IB = 0.02mA ; IC = 2mA ,
PBJT = IB.VBE + IC.VCE
= 0.02x1 + 2x3 = 6.02mW
Công suất tải:
PRC = RC .I C2 = 1k.(2mA) 2 = 4mW

Công suất toàn mạch

P = PRB + PRC + PBJT =
RB .I B2 + RC .I C2 + I BVBE + I CVCE = 10.024mW

Hiệu suất
PRC 4
= = = 39.9 %
P 10,024

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Transistor BJT

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Transistor Biasing
Transistor Biasing is the process of setting a transistors DC operating voltage or
current conditions to the correct level so that any AC input signal can be amplified
correctly by the transistor.

Establishing the correct operating point requires

the selection of bias resistors and load resistors to
provide the appropriate input current and collector
voltage conditions. The correct biasing point for a
bipolar transistor, either NPN or PNP, generally
lies somewhere between the two extremes of
operation with respect to it being either “fully-ON”
or “fully-OFF” along its DC load line. This central
operating point is called the “Quiescent Operating
Point”, or Q-point for short.

The function of the “DC Bias level” is to correctly

set the transistors Q-point by setting its Collector
current ( IC ) to a constant and steady state value
without any external input signal applied to the
transistors Base.
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BJT Configuration

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BJT Configuration

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Common-Emitter Configuration (EC)

•VCE ~ 60% ÷ 70% Vcc

• Voltage amplifier
• The output signal current is larger than the input signal, but not significantly
• The output signal is in opposite phase of the input signal.
• Most commonly used in electronics circuits.
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Common Emitter Configuration

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Common Emitter Configuration

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BJT Configuration
Common-Collector Configuration (CC)

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Common-Collector Configuration (CC)

• High input impedance => buffer

• Low output impedance
• High current gain
• Low voltage gain
• Moderate power gain
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BJT Configuration
Common-Base Configuration (BC)

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Common-Base Configuration (BC)

• Low input impedance

• High output impedance
• High voltage gain
• Less current gain
• Moderate power gain

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Base bias without Emitter feedback

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Base bias without Emitter feedback

VCC = VRC + VCE = I C RC + VCE (*)

VCC = VRB + VBE = I B RB + VBE (**)

• Calculation problem
VCC − VBEQ
VBEQ=0.7 V (* *)  I BQ =
RB
I C = I B VCE = VCC − I C RC
• Design problem

VCC − VCE VCC − VBE VCC − VBE

(*)  RC = (**)  RB =
IB
=
IC
IC 

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 Base bias without Emitter feedback
Advantages of Fixed Biased Circuit
• It is a simple circuit.
• The operating point can be fixed anywhere in the
active region of the characteristics by simply changing
the value of RB.
• Biasing conditions are set easily.
• No loading effect as no resistor is present at base-
emitter junction.
• Due to their simplicity fixed bias circuits are cost
effective.

Disadvantages of Fixed Biased Circuit

• Poor thermal stability.
• Since IC=βIB is already fixed. IC depends on β which is different for
same type of transistor and shifts the operating point.
• Adjusting the operating point over a wide range may be
challenging with fixed bias, limiting its suitability for certain applications.
• Potential for thermal runaway.
• Limited temperature compensation leads to changes in bias point.
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Base bias with Emitter feedback

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Base bias with Emitter feedback

VCC = VRC + VCE + VRE = I C RC + VCE + I E RE (*)

VCC = VRB + VBE + VRE = I B RB + VBE + I E RE (**)

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Voltage divider transistor biasing

RB 2
E BB = VCC E BB = I B R BB + V BE + I E R E
R B1 + R B 2
R B1  R B 2 VCC = I C RC + VCE + I E RE
R BB =
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Voltage divider transistor biasing

RB 2
E BB = VCC E BB = I B R BB + V BE + I E R E
R B1 + R B 2
R B1  R B 2 VCC = I C RC + VCE + I E RE
R BB =
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Voltage divider transistor biasing

Advantages of Voltage Divider Base Circuit

• IC in this circuit is almost independent of transistor
parameters.
• The resistor employed in the emitter provides
stabilization.
• It is the most prominent one.
• Flexibility in adjusting operating point.
• Moderate sensitivity to power supply changes.

Disadvantages of Voltage Divider Base Circuit

• The signals tend to get mixed up.
• It requires more components.
• Due to the increased complexity, it tend to be more
expensive.
• It can lead to reduction in overall circuit efficiency due
to the power dissipation.
• Dependency on component matching.

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Collector-feedback biasing

VCC = VRC + VCE = ( I C + I B ) RC + VCE

VCC = VRC + VRB + VBE = ( I C + I B ) RC + I B RB + VBE

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Collector-feedback biasing
Advantages of Collector to Base Bias Circuit
• It is a simple circuit.
• It provides some stabilization of the operating point.
• It needs only one resistor at base.
• Reduced sensitivity to transistor variations.
• Lower sensitivity to the power supply changes.

Disadvantages of Collector to Base Bias Circuit

• It does not provide good stabilization because stability factor is high.
• It provides a negative feedback which reduce the gain of the amplifier.
• Dependency on component matching.
• More complex in comparison to fixed bias circuits.
• Restricted utilization in certain application with specific voltage requirements.
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Transistor BJT

Vcc=+12V
 = 100 / Si
 = 50 / Si  = 100 / Si
RC=1k R1=40k Rc=5k
Q1 Q1 Q1

RB=100k RB=100k R2=10k RE=2k

RE=2k
VPP=-9V Vpp=-12V Vpp=-12V

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Cut-off and saturation points

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Cut-off and saturation points

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Transistor BJT

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Transistor BJT as logic gates

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Darlington

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Transistor BJT
 Cho mạch phân cực với đặc tuyến ngõ ra của BJT như hình
dưới. Xác định VCC, RC, RB.

Vcc IC(mA)
8
IC

RB RC 6 IB=40μA

Q1 4
Si
IB

2
UCE(V)

0 10 20

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Transistor BJT
VCE =VCC-RCIC

VCC=20V
Vcc
I Csat = = 8 ( mA )  RC = 2.5 ( k  )
Rc
VBE=0.7V

VCC − VBE 20V − 0.7V

IB = = = 40 (  A )
RB RB

 RB = 482.5 ( k  )
Để có các điện trở tiêu chuẩn ta chọn: RB=470 K, RC=2.4 K..

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Transistor BJT

Thiết kế mạch phân cực như hình dưới/Design a bias circuit as

shown below.

Given IC=2mA, VCE=10V Vcc=20V

IC
RB RC
2N4401
 = 150 / Si
IB

RE 100μF
IE

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Transistor BJT
Thực nghiệm, thường chọn VE khoảng 1/10VCC.
Experimentally, usually select about 1/10 Vcc.
1 1 1 1
VE = VCC = 20 = 2 (V ) IB = IC = 2 = 13.333 (  A)
10 10  150

VE VE 2V
RE = = = = 1( k  )
I E I C 2mA
VC − VCE − VE 20V − 10V − 2V
Rc = = = 4 ( k)
IC 2mA

VB = VCC − VBE − VRE = 20 − 0.7 − 2 = 17.3 (V )

Chọn/Select
VB 17.3V
RB = = = 1.3 ( M  ) RB=1.2 MΩ
I B 13.333 A
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Transistor BJT
Design a bias circuit as shown below:

Vcc=20V
R2 = 6,8 ( k  )
IC
R1=39kΩ or 47kΩ
R1 RC
VCE=10V
IB IC=2mA RE=1kΩ
 min = 80 / Si
RC=4kΩ

RE 100μF
IE

R2

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Transistor BJT: Bài tập 1
Tính giá trị IB, IC, công suất qua
VCC
transistor, hiệu suất (công suất
tải / công suất toàn mạch).
Transistor sử dụng trong mạch
Rc là 2SC828
VBB
a) Biết điện trở phân cực
Rb
Q1
Rb = 10kΩ, Rc = 1kΩ, Vcc = 6V,
Vbb = 3.3V
b) Biết điện trở phân cực
Rb = 68kΩ, Rc = 1kΩ, Vcc = 6V,
Vbb = 3.3V
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Transistor BJT: Bài tập 2
Tính giá trị IB, IC, công suất qua
VCC transistor, hiệu suất (công suất
VBB tải / công suất toàn mạch).
Rb
Q1 Transistor sử dụng trong mạch
là 2SC828
a) Biết điện trở phân cực
Re
Rb = 10kΩ, Rc = 1kΩ, Vcc = 6V,
Vbb = 3.3V
b) Biết điện trở phân cực
Rb = 68kΩ, Rc = 1kΩ, Vcc = 6V,
Vbb = 3.3V
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Transistor BJT: Bài tập 3
Tính giá trị IB, IC, công suất qua
VEE transistor, hiệu suất (công suất
tải / công suất toàn mạch).
Re Transistor sử dụng trong mạch
Vbb
là 2SA1015
Rb a) Biết điện trở phân cực
Q2 Rb = 10kΩ, Rc = 1kΩ,
VEE = 10V, Vbb = 3.3V
b) Biết điện trở phân cực
Rb = 100kΩ, Rc = 1kΩ,
VEE = 10V, Vbb = 3.3V
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Transistor BJT: Bài tập 4
Tính giá trị IB, IC, công suất qua
VEE
transistor, hiệu suất (công suất
Vbb
Q2 tải / công suất toàn mạch).
Transistor sử dụng trong mạch
là 2SA1015
Rb a) Biết điện trở phân cực
Rb = 10kΩ, Rc = 1kΩ,
Re VEE = 10V, Vbb = 3.3V
b) Biết điện trở phân cực
Rb = 100kΩ, Rc = 1kΩ,
VEE = 10V, Vbb = 3.3V
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Transistor BJT: Bài tập 5

Lặp lại bài tập 1, 2 với transistor sử dụng trong

mạch là 2SD468, TIP122, 2N3055.
Repeat assignment 1 and 2 with the transistors:
2SD468, TIP122, 2N3055

Lặp lại bài tập 3, 4 với transistor sử dụng trong

mạch là 2SA564, TIP127, MJ2955.
Repeat assignment 3 and 4 with the transistors:
2SA564, TIP127, MJ2955

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FET_Field Effect Transistor
• FET is a three terminal semiconductor device. It is unipolar transistor i.e.
depends only on one type of charge carrier, either electron or hole.
• The current is controlled by the applied electric field hence, it is a voltage-
controlled device.
• FET is simple to fabricate and occupies less space on a chip than a BJT.
About 100000 FETs can be fabricated in a single chip. This makes them
useful in VLSI (very large scale integrate) system.
• It have High input impedances and Low output impedances, so they are
used as buffers at the front end of voltage and other measuring devices.
• It has small coupling capacitances, as a result, they are used in hearing aids.
• There are two types of FET – the JFET (Junction Field Effect Transistor) and
MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

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FET_Field Effect Transistor

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FET_Field Effect Transistor

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FET_Field Effect Transistor

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FET_Field Effect Transistor

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FET_Field Effect Transistor
• The Gate and channel constitute a PN junction diode which is reverse
biased by the gate to the source voltage.
• A depletion layer is developed in the channel as reverse bias increases
the width of depletion layer increases.
• For a fixed drain to source voltage, the drain current will be a function of
reverse bias voltage across the gate junction.
• At a gate-to-source voltage VGS=Vp known as the “Pinch- off” voltage
which eliminates the channel, the channel width is reduces to zero.
• The term Field Effect is used to describe this device because of
mechanism to control current using reverse bias voltage VGS.

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FET_Field Effect Transistor

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FET_Field Effect Transistor

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FET_Field Effect Transistor

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