Code No: R2021041 R20 SET - 1
II B. Tech I Semester Supplementary Examinations, July - 2023
ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE, ECT)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions, each Question from each unit
All Questions carry Equal Marks
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UNIT-I
1 a) What are the majority and minority carriers in an trivalent impurity [7M]
semiconductors? Explain in detail.
b) Derive the expression for Fermi level in p-type semiconductors. [7M]
Or
2 a) Draw the energy band diagram for (i) Conductors (ii) Insulators [7M]
(iii) Semiconductors. Explain in detail.
b) Discuss about Diode Resistance & Diode capacitance. [7M]
UNIT-II
3 a) With neat diagrams, explain the construction of SCR and give its characteristics. [7M]
b) Explain the construction and working of full wave rectifier. [7M]
Or
4 a) Explain Break down mechanisms in a Zener diode? [7M]
b) A 50Ω load resistance is connected across a half wave rectifier. The input supply [7M]
voltage is 230V (rms) at 50 Hz. Determine the DC output (average) voltage,
peak-to-peak ripple in the output voltage (Vp-p), and output ripple frequency
(fr).
UNIT-III
5 a) Explain the operation of BJT. Give the relationship between α, β and γ of a [7M]
transistor.
b) Find the ripple factor expression for FWR with inductor filter. [7M]
Or
6 a) Explain input and output characteristics of CE configuration. [7M]
b) Explain the operation of JFET. Write some applications for JFET. [7M]
UNIT-IV
7 a) Explain the Voltage Divider Biasing With neat sketch. [7M]
b) Explain the procedure to draw AC and DC load lines. [7M]
Or
8 a) What is meant by bias stability? How you stabilize the operating point? [7M]
b) Write a short notes on different biasing techniques for FET. [7M]
UNIT-V
9 Draw the circuit of source follower Amplifier and derive the expressions for AI , [14M]
AV, Ri and Ro.
Or
10 a) Explain the hybrid small signal model for common collector configuration. [7M]
b) What is the significance of two post networks? Explain [7M]
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