STW12N150K5

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5

Power MOSFET in a TO-247 package
Datasheet - production data

Features
Order code VDS RDS(on) max. ID PTOT
STW12N150K5 1500 V 1.9 Ω 7 A 250 W

 Industry’s lowest RDS(on) * area

 Industry’s best figure of merit (FoM)
3  Ultra low gate charge
2
1  100% avalanche tested
 Zener-protected
TO-247
Applications
 Switching applications
Figure 1: Internal schematic diagram
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.

Table 1: Device summary

Order code Marking Package Packing
STW12N150K5 12N150K5 TO-247 Tube

July 2015 DocID027833 Rev 3 1/13

This is information on a product in full production. www.st.com
Contents STW12N150K5

Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 TO-247 package information ........................................................... 10
5 Revision history ............................................................................ 12

2/13 DocID027833 Rev 3

STW12N150K5 Electrical ratings

1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ± 30 V
ID Drain current at TC = 25 °C 7 A
ID Drain current at TC = 100 °C 4 A
(1)
IDM Drain current (pulsed) 28 A
PTOT Total dissipation at TC = 25 °C 250 W
(2)
dv/dt Peak diode recovery voltage slope 4.5 V/ns
(3)
dv/dt MOSFET dv/dt ruggedness 50 V/ns
Tj Operating junction temperature
- 55 to 150 °C
Tstg Storage temperature

Notes:
(1)
Pulse width limited by safe operating area
(2)
ISD ≤ 7 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS
(3)
VDS ≤ 1200 V

Table 3: Thermal data

Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.5 °C/W
Rthj-amb Thermal resistance junction-amb 50 °C/W

Table 4: Avalanche characteristics

Symbol Parameter Value Unit
IAR Max current during repetitive or single pulse avalanche 2 A
EAS Single pulse avalanche energy 900 mJ

DocID027833 Rev 3 3/13

Electrical characteristics STW12N150K5

2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5: On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS VGS = 0 V, ID = 1 mA 1500 V
voltage
VGS = 0 V, VDS = 1500 V 1 µA
Zero gate voltage drain
IDSS VGS = 0 V, VDS = 1500 V,
current 50 µA
Tc=125 °C
IGSS Gate body leakage current VDS = 0, VGS = ± 20 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 3.5 A 1.6 1.9 Ω
resistance

Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 1360 - pF
Coss Output capacitance VGS = 0 V, VDS = 100 V, - 80 - pF
Reverse transfer f = 1MHz
Crss - 0.7 - pF
capacitance
(1) Equivalent capacitance time
Co(tr) - 82 - pF
related VDS = 0 V to 1200 V,
(2) Equivalent capacitance VGS = 0 V
Co(er) - 32 - pF
energy related
RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3 - Ω
Qg Total gate charge VDD = 1200V, ID = 7 A - 47 - nC
Qgs Gate-source charge VGS = 10 V - 8 - nC
(see Figure 16: "Gate charge
Qgd Gate-drain charge test circuit") - 32 - nC

Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS.

4/13 DocID027833 Rev 3

STW12N150K5 Electrical characteristics
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
Turn-on delay
td(on) - 25 - ns
time
VDD = 750 V, ID = 3.5 A, RG = 4.7 Ω
tr Rise time VGS = 10 V - 8 - ns
Turn-off delay (see Figure 18: "Unclamped inductive
td(off) - 90 - ns
time load test circuit")
tf Fall time - 37 - ns

Table 8: Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
Source-drain
ISD - 7 A
current
Source-drain
ISDM - 28 A
current (pulsed)
(1) Forward on
VSD ISD = 7 A, VGS = 0 V - 1.5 V
voltage
Reverse recovery
trr ISD = 7 A, VDD = 60 V - 302 ns
time
di/dt = 100 A/µs,
Reverse recovery
Qrr (see Figure 17: "Test circuit for - 3.71 µC
charge
inductive load switching and diode
Reverse recovery recovery times")
IRRM - 24.6 A
current
Reverse recovery ISD = 7 A,VDD = 60 V
trr - 432 ns
time di/dt = 100 A/µs,
Reverse recovery Tj = 150 °C
Qrr - 4.71 µC
charge (see Figure 17: "Test circuit for
Reverse recovery inductive load switching and diode
IRRM recovery times") - 21.8 A
current

Notes:
(1)
Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A 30 - V

The built-in back-to-back Zener diodes have been specifically designed to enhance the
ESD capability of the device. The Zener voltage is appropriate for efficient and cost-
effective intervention to protect the device integrity. These integrated Zener diodes thus
eliminate the need for external components.

DocID027833 Rev 3 5/13

Electrical characteristics STW12N150K5

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance
GC18460
K
δ=0.5

0.2

0.1
-1
10
0.05

0.02

0.01
10 -2 Z th= K*R thj-c
Single pulse δ= t p/Ƭ

tp
Ƭ
-3
10
10 -5 10 -4 10 -3 10 -2 10 -1 t p (s)

Figure 4: Output characteristics Figure 5: Transfer characteristics

Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

6/13 DocID027833 Rev 3

STW12N150K5 Electrical characteristics
Figure 8: Capacitance variation Figure 9: Output capacitance stored energy

Figure 10: Normalized gate threshold voltage Figure 11: Normalized on-resistance vs
vs temperature temperature

Figure 13: Source-drain diode forward

Figure 12: Normalized V(BR)DSS vs temperature
characteristics

DocID027833 Rev 3 7/13

Electrical characteristics STW12N150K5
Figure 14: Maximum avalanche energy vs TJ

8/13 DocID027833 Rev 3

STW12N150K5 Test circuits

3 Test circuits
Figure 15: Switching times test circuit for resistive
Figure 16: Gate charge test circuit
load

Figure 17: Test circuit for inductive load switching

Figure 18: Unclamped inductive load test circuit
and diode recovery times

Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform

DocID027833 Rev 3 9/13

Package information STW12N150K5

4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
® ®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.

4.1 TO-247 package information

Figure 21: TO-247 package outline

10/13 DocID027833 Rev 3

STW12N150K5 Package information
Table 10: TO-247 package mechanical data
mm.
Dim.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DocID027833 Rev 3 11/13

Revision history STW12N150K5

5 Revision history
Table 11: Document revision history
Date Revision Changes
11-May-2015 1 First release.
Updated title and features in cover page. Updated Section 4:
"Electrical ratings", Section 5: "Electrical characteristics".
30-Jun-2015 2
Added Section 5.1: "Electrical characteristics (curves)" .
Minor text changes.
Updated Section 5.1: "Electrical characteristics (curves)".
07-Jul-2015 3
Minor text changes.

12/13 DocID027833 Rev 3

STW12N150K5

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DocID027833 Rev 3 13/13